This paper investigates the DC and RF performance of a gate field plate (GFP) and proposed
grated gate field plate (GGFP) AlGaN/GaN high electron mobility transistor (HEMT) with a …

An array of Gold (Au) schottky contacts have been deposited on RF Sputtered nanocrystalline
Zinc Oxide thin film. A systematic analysis on the electrical parameters of the Schottky …

In this work, AlGaN/GaN high electron mobility transistor (HEMT) pH sensing simulation model
is presented along with the sensitivity analysis to different pH values of an electrolyte by …

We have investigated the characteristics of pH and salinity sensor derived from the gated
AlGaN/GaN highelectron mobility transistor (HEMT) structures in phosphate buffer saline (PBS) …

… Some effects of buoyancy on EI C O were observed at lower jet exit velocities and the EI C
O was the lowest for the burners with largest buoyancy flux. Elliptic burner flames produced …

AlGaN/GaN high electron mobility transistors (HEMTs) demonstrate exceptional properties
desired for sensing regime applications due to their extraordinary chemical stability, non-…

This work reports structural and optical study of ZnO thin films grown over p-type silicon (Si)
and glass substrates by RF magnetron sputtering technique. Surface morphological and …

… The concept of a C-MOSHEMT sensor is being introduced for the first time for pH detection,
while … CMOSHEMT though generated lower output current than the linear device, and the gm …

… The active power can be calculated using the following equation:(7) P = 1 / T ∫ 0 T v s ( t
) i s ( t ) d t = V s I s 1 c o s c o s ( Φ 1 ) Where Vs is the line voltage RMS value and φ 1 is the …

This work reports thickness dependent structural and optical studies of ZnO thin films grown
over p-type silicon (Si) and glass substrates using RF sputtering technique. The effect of …