Channel conductance measurements can be used as a tool to study thermally activated
electron transport in the sub-threshold region of state-of-art FinFETs. Together with
theoretical tight-binding (TB) calculations, this technique can be used to understand the
dependence of the source-to-channel barrier height (E b) and the active channel area (S aa)
on three important parameters:(i) the gate bias (V gs),(ii) the temperature, and (iii) the
FinFET cross-section size. The quantitative difference between experimental and theoretical …