Homogenous and heterogeneous magnetism in (Zn, Co) O
M Sawicki, E Guziewicz, MI Lukasiewicz… - … on Oxide Materials …, 2012 - ieeexplore.ieee.org
M Sawicki, E Guziewicz, MI Lukasiewicz, O Proselkov, IA Kowalik, P Dluzewski…
2012 IEEE International Conference on Oxide Materials for …, 2012•ieeexplore.ieee.orgFor more than a decade ZnO doped with Mn and Co has remained as one of the most
prospected diluted magnetic semiconductor for spintronic applications with conflicting
outcome concerning the genuineness of its room temperature ferromagnetism. In order to
clarify this issue we investigate (Zn, Co) O layers grown by atomic layer deposition at low
temperatures. We employ and relay on wide range of extensive material characterization,
which in combination with superconducting quantum interference device magnetometry …
prospected diluted magnetic semiconductor for spintronic applications with conflicting
outcome concerning the genuineness of its room temperature ferromagnetism. In order to
clarify this issue we investigate (Zn, Co) O layers grown by atomic layer deposition at low
temperatures. We employ and relay on wide range of extensive material characterization,
which in combination with superconducting quantum interference device magnetometry …
For more than a decade ZnO doped with Mn and Co has remained as one of the most prospected diluted magnetic semiconductor for spintronic applications with conflicting outcome concerning the genuineness of its room temperature ferromagnetism. In order to clarify this issue we investigate (Zn,Co)O layers grown by atomic layer deposition at low temperatures. We employ and relay on wide range of extensive material characterization, which in combination with superconducting quantum interference device magnetometry allow us decisively exemplify the growth temperature as the key factor discriminating between paramagnetic (obtained at 160 °C) and various forms of ferromagnetic responses, seen when the grows is carried out at 200 °C and above.
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