Substrate effect on the resistive switching in BiFeO3 thin films
BiFeO 3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO 2/Si substrates with
pulsed laser deposition using the same growth conditions. Au was sputtered as the top
electrode. The microscopic structure of the thin film varies by changing the underlying
substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of
Schottky contacts at both the top and the bottom interfaces. However, thin films on Pt/Ti/SiO
2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction …
pulsed laser deposition using the same growth conditions. Au was sputtered as the top
electrode. The microscopic structure of the thin film varies by changing the underlying
substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of
Schottky contacts at both the top and the bottom interfaces. However, thin films on Pt/Ti/SiO
2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction …