Effective carrier doping and metallization in thin films
We fabricate La x Sr 2− x− y Ba y IrO 4− δ thin films by pulsed laser deposition in an effort to
realize the effective carrier doping and metallization in the Sr 2 IrO 4 system. We design an
ideal in-plane Ir-O-Ir frame structure by utilizing tensile substrate strain and Ba substitution,
as well as control La doping and oxygen deficiency. This enables us to elucidate the relation
between the charge transport and the carrier density through systematic changes from an
original p-type spin-orbit Mott insulator to a highly doped n-type metal.
realize the effective carrier doping and metallization in the Sr 2 IrO 4 system. We design an
ideal in-plane Ir-O-Ir frame structure by utilizing tensile substrate strain and Ba substitution,
as well as control La doping and oxygen deficiency. This enables us to elucidate the relation
between the charge transport and the carrier density through systematic changes from an
original p-type spin-orbit Mott insulator to a highly doped n-type metal.
We fabricate thin films by pulsed laser deposition in an effort to realize the effective carrier doping and metallization in the system. We design an ideal in-plane Ir-O-Ir frame structure by utilizing tensile substrate strain and Ba substitution, as well as control La doping and oxygen deficiency. This enables us to elucidate the relation between the charge transport and the carrier density through systematic changes from an original -type spin-orbit Mott insulator to a highly doped -type metal.
American Physical Society