Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype
Journal of Instrumentation, 2016•iopscience.iop.org
Active pixel sensors based on the High-Voltage CMOS technology are being investigated as
a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity
LHC. This paper reports on the testbeam measurements performed at the H8 beamline of
the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced
in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance,
for different threshold and bias conditions, are shown.
a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity
LHC. This paper reports on the testbeam measurements performed at the H8 beamline of
the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced
in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance,
for different threshold and bias conditions, are shown.
Abstract
Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.
iopscience.iop.org
