Compensation of temperature effects on the pull-in voltage of microstructures
Sensors and Actuators A: Physical, 2004•Elsevier
The pull-in voltage of a suspended microstructure has been investigated for use as on-chip
voltage reference in a compatible MEMS-IC process. Pull-in is detected using capacitive
displacement measurement. The stability is affected by an initial parasitic charge build-up
and a temperature sensitivity of− 149μV/K. A burn-in procedure is required to minimize the
first effect. The temperature coefficient is compensated for by applying additional
temperature dependent electrostatic energy to the microstructure. Devices fabricated in an …
voltage reference in a compatible MEMS-IC process. Pull-in is detected using capacitive
displacement measurement. The stability is affected by an initial parasitic charge build-up
and a temperature sensitivity of− 149μV/K. A burn-in procedure is required to minimize the
first effect. The temperature coefficient is compensated for by applying additional
temperature dependent electrostatic energy to the microstructure. Devices fabricated in an …
The pull-in voltage of a suspended microstructure has been investigated for use as on-chip voltage reference in a compatible MEMS-IC process. Pull-in is detected using capacitive displacement measurement. The stability is affected by an initial parasitic charge build-up and a temperature sensitivity of −149μV/K. A burn-in procedure is required to minimize the first effect. The temperature coefficient is compensated for by applying additional temperature dependent electrostatic energy to the microstructure. Devices fabricated in an epi-poly process and designed for a nominal pull-in voltage at 5V have a measured value at 4.7424V. Drift becomes negligible after 120h of operation. The temperature reproducibility is within the resolution of the readout at 100μV over a temperature range between 20 and 60°C.
Elsevier