The performance limits of carbon nanotube field-effect transistors (CNTFETs) are examined
theoretically by extending a one-dimensional treatment used for silicon metal–oxide–
semiconductor field-effect transistors (MOSFETs). Compared to ballistic MOSFETs, ballistic
CNTFETs show similar I–V characteristics but the channel conductance is quantized. For
low-voltage, digital applications, the CNTFET with a planar gate geometry provides an on-
current that is comparable to that expected for a ballistic MOSFET. Significantly better …