Neutron-and proton-induced single event upsets for D-and DICE-flip/flop designs at a 40 nm technology node
IEEE Transactions on Nuclear Science, 2011•ieeexplore.ieee.org
Neutron-and proton-induced single-event upset cross sections of D-and DICE-Flip/Flops are
analyzed for designs implemented in a 40 nm bulk technology node. Neutron and proton
testing of the flip/flops show only a 30%-50% difference between D-and DICE-Flip/Flop error
rates and cross sections. Simulations are used to show that charge sharing is the primary
cause for the similar failures-in-time (FIT) rates. Such small improvement in the single-event
performance of the DICE implementation over standard D-Flip/Flop designs may warrant …
analyzed for designs implemented in a 40 nm bulk technology node. Neutron and proton
testing of the flip/flops show only a 30%-50% difference between D-and DICE-Flip/Flop error
rates and cross sections. Simulations are used to show that charge sharing is the primary
cause for the similar failures-in-time (FIT) rates. Such small improvement in the single-event
performance of the DICE implementation over standard D-Flip/Flop designs may warrant …
Neutron- and proton-induced single-event upset cross sections of D- and DICE-Flip/Flops are analyzed for designs implemented in a 40 nm bulk technology node. Neutron and proton testing of the flip/flops show only a 30%-50% difference between D- and DICE-Flip/Flop error rates and cross sections. Simulations are used to show that charge sharing is the primary cause for the similar failures-in-time (FIT) rates. Such small improvement in the single-event performance of the DICE implementation over standard D-Flip/Flop designs may warrant careful consideration for the use of DICE designs in 40 nm bulk technologies and beyond.
ieeexplore.ieee.org
