1975 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
This paper will describe a multielectrode, digital-communication, implantable stimulation package... more This paper will describe a multielectrode, digital-communication, implantable stimulation package for an auditory prosthesis, based on a novel charge-redistribution digital-to-analog-charge-demultiplexer as the principal circuit element.
ABSTRACT A complementary metal-oxide-semiconductor fabrication process has been developed for low... more ABSTRACT A complementary metal-oxide-semiconductor fabrication process has been developed for low-power-consumption biomedical applications. This process realizes low gate-drain and gate-source capacitances useful for high-speed low-capacitive coupling noise circuitry, on the same integrated circuit die with high-voltage p-channel transistors capable of withstanding greater than 75V. Details of the process and device parameters and experimental correlations relating these two parameters are given. A high-voltage driver scan circuit is presented as an example of the capability of this process.
1975 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
This paper will describe a multielectrode, digital-communication, implantable stimulation package... more This paper will describe a multielectrode, digital-communication, implantable stimulation package for an auditory prosthesis, based on a novel charge-redistribution digital-to-analog-charge-demultiplexer as the principal circuit element.
ABSTRACT A complementary metal-oxide-semiconductor fabrication process has been developed for low... more ABSTRACT A complementary metal-oxide-semiconductor fabrication process has been developed for low-power-consumption biomedical applications. This process realizes low gate-drain and gate-source capacitances useful for high-speed low-capacitive coupling noise circuitry, on the same integrated circuit die with high-voltage p-channel transistors capable of withstanding greater than 75V. Details of the process and device parameters and experimental correlations relating these two parameters are given. A high-voltage driver scan circuit is presented as an example of the capability of this process.
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