Résumé Les complexes de transfert de charge (complexes CT) sont formés durant la réaction des don... more Résumé Les complexes de transfert de charge (complexes CT) sont formés durant la réaction des donneurs -π, tels que les colorants benzanthrone substitués par des dérivés azométhines en position 3 avec l'iode comme accepteur -σ. Nous avons étudié les réactions de l'accepteur iode avec les donneurs dérivés benzanthrone par photométrie dans le chloroforme et à température ambiante. Les données obtenues indiquent la formation de complexes de transfert de charge 1:1 de formulation [BA].I 2 , où (BA = dérivés benzanthrone). Nous avons déterminé les valeurs de la constante d'équilibre (K), du coefficient d'extinction (ε) et de la force de l'oscillateur (f) pour tous les complexes obtenus dans cette étude. Abstract Charge-transfer complexes (CT-complexes) are formed during the reaction of π-donors, such as substituted benzanthrone dyes substituted with azomethine derivative groups at position 3, with iodine as the σ-acceptor. The reactions of iodine (acceptor) with benza...
Résumé Les complexes de transfert de charge (complexes CT) sont formés durant la réaction des don... more Résumé Les complexes de transfert de charge (complexes CT) sont formés durant la réaction des donneurs -π, tels que les colorants benzanthrone substitués par des dérivés azométhines en position 3 avec l'iode comme accepteur -σ. Nous avons étudié les réactions de l'accepteur iode avec les donneurs dérivés benzanthrone par photométrie dans le chloroforme et à température ambiante. Les données obtenues indiquent la formation de complexes de transfert de charge 1:1 de formulation [BA].I 2 , où (BA = dérivés benzanthrone). Nous avons déterminé les valeurs de la constante d'équilibre (K), du coefficient d'extinction (ε) et de la force de l'oscillateur (f) pour tous les complexes obtenus dans cette étude. Abstract Charge-transfer complexes (CT-complexes) are formed during the reaction of π-donors, such as substituted benzanthrone dyes substituted with azomethine derivative groups at position 3, with iodine as the σ-acceptor. The reactions of iodine (acceptor) with benza...
Dilute solutions of poly(n-decyl methacrylate) in homologous series of n-alkanes have been studie... more Dilute solutions of poly(n-decyl methacrylate) in homologous series of n-alkanes have been studied. The measurements of viscosity-temperature dependence of poly(n-decyl methacrylate) in n-alkanes (as a model solvent for paranic oils) were applied for model calculation of the speci®c viscosity as a function of temperature and molecular weight. Exchange parameters of poly(n-decyl methacrylate) in n-alkanes have been determined according to Flory's theory and were applied to predict the mixing of polymethylene with poly(n-decyl methacrylate). The positive energy of mixing signi®es mutual incompatibility of these polymers.
Al x (Ge2Sb2Te5)100−x materials with different Al contents are systemically studied for applicati... more Al x (Ge2Sb2Te5)100−x materials with different Al contents are systemically studied for applications in phase-change random access memory (PRAM) devices. Al-doped Ge2Sb2Te5 (GST) films show better thermal stability than GST because they do not have phase transformation from face-centred cubic (fcc) to hexagonal at high annealing temperatures. As the Al content increases, the resistance in both amorphous and crystalline phases improves and there is four to five orders of magnitude difference in the resistance between the amorphous and crystalline phases, all of which are helpful in achieving a higher On/OFF ratio for PRAM. In addition, the introduction of Al into the GST films can increase the optical band gap that is favourable to decrease the threshold current of PRAM devices. Raman spectra show that a significant change in the local bonding arrangement around Sb atoms has occurred due to the phase transformation from fcc to hexagonal in the GST film but this can be suppressed by A...
A superior hydrophobic piezoelectric solid based on the polyvinylidene fluoride (PVDF)–polyacrilo... more A superior hydrophobic piezoelectric solid based on the polyvinylidene fluoride (PVDF)–polyacrilonitrile (PAN) blend was fabricated. The phase conversion was derived by functionalized carbon nanotubes under a modified electrospinning field.
Dilute solutions of poly(n-hexyl methacrylate) have been studied in the homologous series of alka... more Dilute solutions of poly(n-hexyl methacrylate) have been studied in the homologous series of alkanes at different temperatures using viscometry. Mark-Houwink relations in solvents widely differing in their thermodynamical quality were established together with the unperturbed dimensions and their temperature coefficient.
Résumé Les complexes de transfert de charge (complexes CT) sont formés durant la réaction des don... more Résumé Les complexes de transfert de charge (complexes CT) sont formés durant la réaction des donneurs -π, tels que les colorants benzanthrone substitués par des dérivés azométhines en position 3 avec l'iode comme accepteur -σ. Nous avons étudié les réactions de l'accepteur iode avec les donneurs dérivés benzanthrone par photométrie dans le chloroforme et à température ambiante. Les données obtenues indiquent la formation de complexes de transfert de charge 1:1 de formulation [BA].I 2 , où (BA = dérivés benzanthrone). Nous avons déterminé les valeurs de la constante d'équilibre (K), du coefficient d'extinction (ε) et de la force de l'oscillateur (f) pour tous les complexes obtenus dans cette étude. Abstract Charge-transfer complexes (CT-complexes) are formed during the reaction of π-donors, such as substituted benzanthrone dyes substituted with azomethine derivative groups at position 3, with iodine as the σ-acceptor. The reactions of iodine (acceptor) with benza...
Résumé Les complexes de transfert de charge (complexes CT) sont formés durant la réaction des don... more Résumé Les complexes de transfert de charge (complexes CT) sont formés durant la réaction des donneurs -π, tels que les colorants benzanthrone substitués par des dérivés azométhines en position 3 avec l'iode comme accepteur -σ. Nous avons étudié les réactions de l'accepteur iode avec les donneurs dérivés benzanthrone par photométrie dans le chloroforme et à température ambiante. Les données obtenues indiquent la formation de complexes de transfert de charge 1:1 de formulation [BA].I 2 , où (BA = dérivés benzanthrone). Nous avons déterminé les valeurs de la constante d'équilibre (K), du coefficient d'extinction (ε) et de la force de l'oscillateur (f) pour tous les complexes obtenus dans cette étude. Abstract Charge-transfer complexes (CT-complexes) are formed during the reaction of π-donors, such as substituted benzanthrone dyes substituted with azomethine derivative groups at position 3, with iodine as the σ-acceptor. The reactions of iodine (acceptor) with benza...
Dilute solutions of poly(n-decyl methacrylate) in homologous series of n-alkanes have been studie... more Dilute solutions of poly(n-decyl methacrylate) in homologous series of n-alkanes have been studied. The measurements of viscosity-temperature dependence of poly(n-decyl methacrylate) in n-alkanes (as a model solvent for paranic oils) were applied for model calculation of the speci®c viscosity as a function of temperature and molecular weight. Exchange parameters of poly(n-decyl methacrylate) in n-alkanes have been determined according to Flory's theory and were applied to predict the mixing of polymethylene with poly(n-decyl methacrylate). The positive energy of mixing signi®es mutual incompatibility of these polymers.
Al x (Ge2Sb2Te5)100−x materials with different Al contents are systemically studied for applicati... more Al x (Ge2Sb2Te5)100−x materials with different Al contents are systemically studied for applications in phase-change random access memory (PRAM) devices. Al-doped Ge2Sb2Te5 (GST) films show better thermal stability than GST because they do not have phase transformation from face-centred cubic (fcc) to hexagonal at high annealing temperatures. As the Al content increases, the resistance in both amorphous and crystalline phases improves and there is four to five orders of magnitude difference in the resistance between the amorphous and crystalline phases, all of which are helpful in achieving a higher On/OFF ratio for PRAM. In addition, the introduction of Al into the GST films can increase the optical band gap that is favourable to decrease the threshold current of PRAM devices. Raman spectra show that a significant change in the local bonding arrangement around Sb atoms has occurred due to the phase transformation from fcc to hexagonal in the GST film but this can be suppressed by A...
A superior hydrophobic piezoelectric solid based on the polyvinylidene fluoride (PVDF)–polyacrilo... more A superior hydrophobic piezoelectric solid based on the polyvinylidene fluoride (PVDF)–polyacrilonitrile (PAN) blend was fabricated. The phase conversion was derived by functionalized carbon nanotubes under a modified electrospinning field.
Dilute solutions of poly(n-hexyl methacrylate) have been studied in the homologous series of alka... more Dilute solutions of poly(n-hexyl methacrylate) have been studied in the homologous series of alkanes at different temperatures using viscometry. Mark-Houwink relations in solvents widely differing in their thermodynamical quality were established together with the unperturbed dimensions and their temperature coefficient.
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