- Goleta, California, United States
Research Interests:
Transphorm Inc. is supplying N-polar GaN epitaxial wafers for ultra-high-performance RF and mm-wave electronics on sapphire and silicon carbide (SiC) substrates. In this work, we report on the manufacturing facility, epitaxial growth on... more
Transphorm Inc. is supplying N-polar GaN epitaxial wafers for ultra-high-performance RF and mm-wave electronics on sapphire and silicon carbide (SiC) substrates. In this work, we report on the manufacturing facility, epitaxial growth on both 100-mm sapphire and 100-mm SiC, and device electrical performance. Results show good material quality, a low 2DEG sheet resistance with good non-uniformity, and good dynamic behavior with no current dispersion at 60 V at both room temperature and high temperature (150°C).
Research Interests:
\u672c\u767c\u660e\u4fc2\u95dc\u65bc\u534a\u5c0e\u9ad4\u88dd\u7f6e\uff0c\u4e14\u66f4\u7279\u5b9a\u8a00\u4e4b\uff0c\u672c\u767c\u660e\u4fc2\u95dc\u65bc\u55ae\u4e00\u6216\u591a\u91cd\u9598\u6975\u5834\u5e73\u677f\u4e4b\u88fd\u9020\u3002This... more
\u672c\u767c\u660e\u4fc2\u95dc\u65bc\u534a\u5c0e\u9ad4\u88dd\u7f6e\uff0c\u4e14\u66f4\u7279\u5b9a\u8a00\u4e4b\uff0c\u672c\u767c\u660e\u4fc2\u95dc\u65bc\u55ae\u4e00\u6216\u591a\u91cd\u9598\u6975\u5834\u5e73\u677f\u4e4b\u88fd\u9020\u3002This invention relates to semiconductor devices and, more particularly, to the fabrication of single or multiple gate field plates
Research Interests:
La presente invention concerne un transistor comprenant une pluralite de couches de semi-conducteur actives appliquees sur un substrat, des electrodes source et drain etant en contact avec les couches de semi-conducteur. Une porte est... more
La presente invention concerne un transistor comprenant une pluralite de couches de semi-conducteur actives appliquees sur un substrat, des electrodes source et drain etant en contact avec les couches de semi-conducteur. Une porte est formee entre les electrodes source et drain et sur la pluralite de couches de semi-conducteur. Une pluralite de plaques de champ sont disposees sur les couches de semi-conducteur, chacune d'entre elles s'etendant du bord de la porte vers l'electrode drain, et chacune d'entre elles etant isolee desdites couches de semi-conducteur et des autres plaques de champ. La plaque de champ situee la plus sur le dessus est connectee electriquement a l'electrode source, et les autres plaques de champ sont connectees electriquement a l'electrode porte ou source.
Research Interests:
La presente invention concerne un transistor a haute mobilite d'electrons (HEMT) qui comprend une pluralite de couches semi-conductrices actives formees sur un substrat. Une electrode source, une electrode drain et une grille sont... more
La presente invention concerne un transistor a haute mobilite d'electrons (HEMT) qui comprend une pluralite de couches semi-conductrices actives formees sur un substrat. Une electrode source, une electrode drain et une grille sont formees en contact electrique avec les multiples couches actives. Une couche d'espacement est formee sur au moins une partie d'une surface des multiples couches actives et recouvre la grille. Une plaque de champ est formee sur la couche d'espacement et electriquement reliee a l'electrode source, ladite plaque de champ reduisant le champ electrique maximal dans le HEMT.
Research Interests:
Research Interests:
Research Interests:
Research Interests:
Research Interests:
High-power GaN-based flip-chip ICs are demonstrated using AlGaN/GaN High-Electron-Mobility-Transistors (HEMTs) as the active devices and AlN as the circuit substrates. The circuits achieved 6-10 GHz bandwidth, 9 dB linear gain and 14.1-W... more
High-power GaN-based flip-chip ICs are demonstrated using AlGaN/GaN High-Electron-Mobility-Transistors (HEMTs) as the active devices and AlN as the circuit substrates. The circuits achieved 6-10 GHz bandwidth, 9 dB linear gain and 14.1-W output power. This power level is the highest for a GaN-based amplifier to date, and is a factor of 4-7 higher than conventional GaAs-HEMT-based amplifiers using the same size of output devices
Research Interests:
Manufacturing readiness of the world's first highly reliable 650V GaN HEMT is demonstrated with high process capability (CpK>1.6) for leakage and on resistance. This technology was developed in a Si-CMOS compatible 6-inch foundry... more
Manufacturing readiness of the world's first highly reliable 650V GaN HEMT is demonstrated with high process capability (CpK>1.6) for leakage and on resistance. This technology was developed in a Si-CMOS compatible 6-inch foundry and has been demonstrated with over one thousand wafers worth of data spread over two generations of technology nodes covering multiple products and packages collected during ramp up post qualification. Silicon manufacturing processes are employed including gold-free processes that avoid the use of evaporation/liftoff typical to compound semiconductors. Probe yield and Line yield for the GaN process now matches mature Si-CMOS process running in the same fabrication facility. Extended qualification results beyond JEDEC standard are also shown for GaN products for the first time. Products in cascode configuration were tested. Wide bandgap high speed and high voltage GaN devices significantly reduce the system size and improve energy efficiency of power conversion in all areas of electricity conversion, ranging from PV inverters to electric vehicles making the above results significant and making GaN high volume production a reality.