We demonstrate a microbump flip-chip integrated 14nm-FinFET CMOS-Silicon Photonics (SiPh) technol... more We demonstrate a microbump flip-chip integrated 14nm-FinFET CMOS-Silicon Photonics (SiPh) technology platform enabling ultra-low power Optical I/O transceivers with 1.6Tb/s/mm2 bandwidth density. The transmitter combines a differential FinFET driver with a Si ring modulator, enabling 40Gb/s NRZ optical modulation at 154fJ/bit dynamic power consumption in a 0.015mm2 footprint. The receiver combines a FinFET trans-impedance amplifier (TIA) with a Ge photodiode, enabling 40Gb/s NRZ photodetection with −10.3dBm sensitivity at 75fJ/bit power consumption, in a 0.01mm2 footprint. High-quality data transmission and reception is demonstrated in a loop-back experiment at 1330nm wavelength over standard single mode fiber (SMF) with 2dB link margin. Finally, a 4×40Gb/s, 0.1mm2 wavelength-division multiplexing (WDM) transmitter with integrated thermal control is demonstrated, enabling Optical I/O scaling substantially beyond 100Gb/s per fiber.
We present O-band Si ring modulators with up to 58pm/V electro-optic and 610pm/mW thermo-optic mo... more We present O-band Si ring modulators with up to 58pm/V electro-optic and 610pm/mW thermo-optic modulation efficiencies and >24GHz modulation bandwidth, enabling a hybrid CMOS-SiPho transceiver with error-free operation at 40Gbps NRZ with <4pJ/bit link energy.
A 16-channel spatial-division multiplexed transceiver is demonstrated using a multicore fiber cou... more A 16-channel spatial-division multiplexed transceiver is demonstrated using a multicore fiber coupled to a dense array of co-integrated 56Gb/s GeSi electro-absorption modulators and photodetectors, realizing 896Gb/s aggregate bi-directional bandwidth in 1.47mm2 silicon footprint.
Silicon photonics interposers enable low power, high bandwidth signal transfer between CMOS chips... more Silicon photonics interposers enable low power, high bandwidth signal transfer between CMOS chips. Optical wave guides transfer the optical signal that carries the information. Optical modulator and detectors realize the optical to electrical signal transfer and vice versa. These components could be facing ESD stress during assembly. This work presents an in-depth study the self-protecting capabilities of these components and provides an ESD protection solution to increase the ESD robustness.
We demonstrate a microbump flip-chip integrated 14nm-FinFET CMOS-Silicon Photonics (SiPh) technol... more We demonstrate a microbump flip-chip integrated 14nm-FinFET CMOS-Silicon Photonics (SiPh) technology platform enabling ultra-low power Optical I/O transceivers with 1.6Tb/s/mm2 bandwidth density. The transmitter combines a differential FinFET driver with a Si ring modulator, enabling 40Gb/s NRZ optical modulation at 154fJ/bit dynamic power consumption in a 0.015mm2 footprint. The receiver combines a FinFET trans-impedance amplifier (TIA) with a Ge photodiode, enabling 40Gb/s NRZ photodetection with −10.3dBm sensitivity at 75fJ/bit power consumption, in a 0.01mm2 footprint. High-quality data transmission and reception is demonstrated in a loop-back experiment at 1330nm wavelength over standard single mode fiber (SMF) with 2dB link margin. Finally, a 4×40Gb/s, 0.1mm2 wavelength-division multiplexing (WDM) transmitter with integrated thermal control is demonstrated, enabling Optical I/O scaling substantially beyond 100Gb/s per fiber.
We present O-band Si ring modulators with up to 58pm/V electro-optic and 610pm/mW thermo-optic mo... more We present O-band Si ring modulators with up to 58pm/V electro-optic and 610pm/mW thermo-optic modulation efficiencies and >24GHz modulation bandwidth, enabling a hybrid CMOS-SiPho transceiver with error-free operation at 40Gbps NRZ with <4pJ/bit link energy.
A 16-channel spatial-division multiplexed transceiver is demonstrated using a multicore fiber cou... more A 16-channel spatial-division multiplexed transceiver is demonstrated using a multicore fiber coupled to a dense array of co-integrated 56Gb/s GeSi electro-absorption modulators and photodetectors, realizing 896Gb/s aggregate bi-directional bandwidth in 1.47mm2 silicon footprint.
Silicon photonics interposers enable low power, high bandwidth signal transfer between CMOS chips... more Silicon photonics interposers enable low power, high bandwidth signal transfer between CMOS chips. Optical wave guides transfer the optical signal that carries the information. Optical modulator and detectors realize the optical to electrical signal transfer and vice versa. These components could be facing ESD stress during assembly. This work presents an in-depth study the self-protecting capabilities of these components and provides an ESD protection solution to increase the ESD robustness.
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Papers by Peter De Heyn