High Domain Wall Velocity at Zero Magnetic Field Induced by Low Current Densities in Spin Valve Nanostripes
Abstract
Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below 1012 A/m2, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.
- Publication:
-
Applied Physics Express
- Pub Date:
- February 2009
- DOI:
- 10.1143/APEX.2.023003
- arXiv:
- arXiv:0810.3576
- Bibcode:
- 2009APExp...2b3003P
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- Published version, Applied Physics Express 2, 023003 (2009) http://dx.doi.org/10.1143/APEX.2.023003