Atomistic structure of amorphous silicon nitride from classical molecular dynamics simulations
Abstract
By means of molecular dynamics simulations based on the Billeter [S. R. Billeter, A. Curioni, D. Fischer, and W. Andreoni, Phys. Rev. BPRLTAO1098-012110.1103/PhysRevB.73.155329 73, 155329 (2006)] environment-dependent classical force field we studied the structural features of SiNx samples at various stoichiometries. Our results are in good agreement with experimental data and are able to reproduce some features which so far were not reproduced by simulations. In particular, we identified units containing N-N bonds, which are thought to be responsible for an unassigned peak in the radial distribution function obtained from neutron diffraction data and signals observed in electron spin resonance, x-ray photoemission spectroscopy, electron-energy-loss spectroscopy, and optical absorption experiments. We have identified defects which are thought to be responsible for the high concentration of charge traps that makes this material suitable for building nonvolatile memory devices. We analyzed the dependency of the concentration of these defects with the stoichiometry of the sample.
- Publication:
-
Physical Review B
- Pub Date:
- April 2011
- DOI:
- 10.1103/PhysRevB.83.165209
- arXiv:
- arXiv:1102.0145
- Bibcode:
- 2011PhRvB..83p5209I
- Keywords:
-
- 61.43.Bn;
- 81.05.Gc;
- Structural modeling: serial-addition models computer simulation;
- Amorphous semiconductors;
- Condensed Matter - Disordered Systems and Neural Networks;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- doi:10.1103/PhysRevB.83.165209