Capacitance-Voltage Measurements of (Bi1-xSbx)2Te3 Field Effect Devices
Abstract
Capacitance-voltage (C-V) traces in n-type-(Bi1-xSbx)2Te3/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage (Vtg) from positive to negative values, the system at the interface is tuned from accumulation, via depletion into inversion. The results show the typical low-frequency and high frequency C-V traces, depending on measuring frequency, temperature, and illumination intensity and reflecting their sensitive dependence on recombination/generation rates. Superimposed a strong hysteresis under inversion is also observed which is ascribed to the presence of conventional localized surface states (LSS) which coexist with topological surface states (TSS).
- Publication:
-
Physica Status Solidi B Basic Research
- Pub Date:
- July 2019
- DOI:
- 10.1002/pssb.201800624
- arXiv:
- arXiv:1907.12147
- Bibcode:
- 2019PSSBR.25600624W
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 18 pages, 5 figures