Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
... Shirey, KW Foster,c) J. M. Andrews, and MC Peckerar Nanoelectronics Processing Facility, Elec... more ... Shirey, KW Foster,c) J. M. Andrews, and MC Peckerar Nanoelectronics Processing Facility, Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC20375 Y.-C. Ku Department of Electrical Engineering and ... See text for RIE conditions. ...
Discrete Fourier transform (DFr) techniques have been applied to the analysis of the Franz-Keldys... more Discrete Fourier transform (DFr) techniques have been applied to the analysis of the Franz-Keldysh oscillations used in determining electric fields. It is shown that the DFT can be applied to a wide range of EM line shapes and that it can yield accurate results for the electric fields in the case where one field is present in the sample. For cases where there are contributions to the EM spectrum from either two electric fields or two degenerate transitions, such as excitations originating from light- and heavy-hole valence bands, care must be applied in extracting the field from the lower intensity DF” peak. The window used to obtain the DFT influences the peak position of lower intensity DFT peak and thus can lead to spurious shifts of the line.
Two approaches to achieving reduced-defect active regions in III-N devices are discussed - confin... more Two approaches to achieving reduced-defect active regions in III-N devices are discussed - confined epitaxy and heteroepitaxy on step-free SiC surfaces. In confined epitaxy, sapphire substrates (either GaN coated or not) are patterned with a dielectric mask and then III-N device structures are selectively and vertically grown in the openings using metalorganic chemical vapor deposition (MOCVD). In heteroepitaxy on step-free SiC surfaces, SiC mesas are created that have surfaces completely free of atomic steps and then used as substrates for conventional MOCVD III-N growth. In both approaches significant reductions in extended defect densities (10-100x) are observed and manifest in improved electroluminescence efficiency of UV emitters and leakage currents in UV detectors. Extensions of these efforts and other structural characterization results will be presented. Modeling results suggesting directions for future efforts will also be discussed.
In this paper, an outline of materials-related activities in the national X-Ray Lithography Progr... more In this paper, an outline of materials-related activities in the national X-Ray Lithography Program is given. The program is directed towards the development of sub-quarter micron design-rule x-ray lithography together with the ancillary technologies required to fabricate defect-free x-ray masks. Work done at the Naval Research Laboratory is highlighted and used for examples. Most materials related work occurs in conjunction in the x-ray mask fabrication pro. cess. Topics discussed include electron beam-matter interaction in the mask patterning process, membane fabrication, stress control in thin membranes, reactive-ion etching of absorber-layers, mask inspection and repair.
Abstract An asymmetrical MOSFET structure is formed by using a focused-ion-beam implantor to crea... more Abstract An asymmetrical MOSFET structure is formed by using a focused-ion-beam implantor to create ap+ channel doping next to the source. This work builds on previous efforts by providing a uniquely tailored doping profile through the use of localized beams. ...
Compact modeling of MOSFETs from a 0.35 ��m SOI technology node operating at 4K is presented. The... more Compact modeling of MOSFETs from a 0.35 ��m SOI technology node operating at 4K is presented. The Verilog-A language is used to modify device equations for BSIM models and more accurately reproduce measured DC behavior, which is not possible with the standard BSIM model set. The model presented exhibits convergent behavior and is shown to be experimentally accurate at 4K. No design tool currently in place exhibits convergence and/or accuracy over this range. The Verilog-A approach also allows the embedding of nonlinear ...
Student Paper A Low Cost Micro-Hot-Plate for Disposable Aerosol Generation Applications Guannan L... more Student Paper A Low Cost Micro-Hot-Plate for Disposable Aerosol Generation Applications Guannan Liu, Daniel Lowy, Amir Kahrim, Magdalena Csipo, Chao Wang, Zeynep Dilli, Nick Kratzmeier, Wei Zhao, Martin Peckerar a Department of Electrical and Computer Engineering, University of Maryland, College Park, MD 20742, USA b FlexEl LLC, 387 Technology Drive, Suite 2104, College Park, Maryland 20742, USA * Corresponding author. Martin Peckerar Tel.:+1 301 405 7187; E-mail address: peckerar@umd.edu Guannan Liu. Tel.:+1 202 288 9929; E-mail address: ggnliu@umd.edu
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
... Shirey, KW Foster,c) J. M. Andrews, and MC Peckerar Nanoelectronics Processing Facility, Elec... more ... Shirey, KW Foster,c) J. M. Andrews, and MC Peckerar Nanoelectronics Processing Facility, Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC20375 Y.-C. Ku Department of Electrical Engineering and ... See text for RIE conditions. ...
Discrete Fourier transform (DFr) techniques have been applied to the analysis of the Franz-Keldys... more Discrete Fourier transform (DFr) techniques have been applied to the analysis of the Franz-Keldysh oscillations used in determining electric fields. It is shown that the DFT can be applied to a wide range of EM line shapes and that it can yield accurate results for the electric fields in the case where one field is present in the sample. For cases where there are contributions to the EM spectrum from either two electric fields or two degenerate transitions, such as excitations originating from light- and heavy-hole valence bands, care must be applied in extracting the field from the lower intensity DF” peak. The window used to obtain the DFT influences the peak position of lower intensity DFT peak and thus can lead to spurious shifts of the line.
Two approaches to achieving reduced-defect active regions in III-N devices are discussed - confin... more Two approaches to achieving reduced-defect active regions in III-N devices are discussed - confined epitaxy and heteroepitaxy on step-free SiC surfaces. In confined epitaxy, sapphire substrates (either GaN coated or not) are patterned with a dielectric mask and then III-N device structures are selectively and vertically grown in the openings using metalorganic chemical vapor deposition (MOCVD). In heteroepitaxy on step-free SiC surfaces, SiC mesas are created that have surfaces completely free of atomic steps and then used as substrates for conventional MOCVD III-N growth. In both approaches significant reductions in extended defect densities (10-100x) are observed and manifest in improved electroluminescence efficiency of UV emitters and leakage currents in UV detectors. Extensions of these efforts and other structural characterization results will be presented. Modeling results suggesting directions for future efforts will also be discussed.
In this paper, an outline of materials-related activities in the national X-Ray Lithography Progr... more In this paper, an outline of materials-related activities in the national X-Ray Lithography Program is given. The program is directed towards the development of sub-quarter micron design-rule x-ray lithography together with the ancillary technologies required to fabricate defect-free x-ray masks. Work done at the Naval Research Laboratory is highlighted and used for examples. Most materials related work occurs in conjunction in the x-ray mask fabrication pro. cess. Topics discussed include electron beam-matter interaction in the mask patterning process, membane fabrication, stress control in thin membranes, reactive-ion etching of absorber-layers, mask inspection and repair.
Abstract An asymmetrical MOSFET structure is formed by using a focused-ion-beam implantor to crea... more Abstract An asymmetrical MOSFET structure is formed by using a focused-ion-beam implantor to create ap+ channel doping next to the source. This work builds on previous efforts by providing a uniquely tailored doping profile through the use of localized beams. ...
Compact modeling of MOSFETs from a 0.35 ��m SOI technology node operating at 4K is presented. The... more Compact modeling of MOSFETs from a 0.35 ��m SOI technology node operating at 4K is presented. The Verilog-A language is used to modify device equations for BSIM models and more accurately reproduce measured DC behavior, which is not possible with the standard BSIM model set. The model presented exhibits convergent behavior and is shown to be experimentally accurate at 4K. No design tool currently in place exhibits convergence and/or accuracy over this range. The Verilog-A approach also allows the embedding of nonlinear ...
Student Paper A Low Cost Micro-Hot-Plate for Disposable Aerosol Generation Applications Guannan L... more Student Paper A Low Cost Micro-Hot-Plate for Disposable Aerosol Generation Applications Guannan Liu, Daniel Lowy, Amir Kahrim, Magdalena Csipo, Chao Wang, Zeynep Dilli, Nick Kratzmeier, Wei Zhao, Martin Peckerar a Department of Electrical and Computer Engineering, University of Maryland, College Park, MD 20742, USA b FlexEl LLC, 387 Technology Drive, Suite 2104, College Park, Maryland 20742, USA * Corresponding author. Martin Peckerar Tel.:+1 301 405 7187; E-mail address: peckerar@umd.edu Guannan Liu. Tel.:+1 202 288 9929; E-mail address: ggnliu@umd.edu
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