In this work, we report the production of NbSe2 (niobium diselenide) nanotubes formed by irradiat... more In this work, we report the production of NbSe2 (niobium diselenide) nanotubes formed by irradiating NbSe2 with high doses of electron irradiation. The apparatus used for the irradiation was a 2 MeV Van de Graaff accelerator at the following conditions: voltage 1.3 MeV, current 5 μA, dose rate 25 kGy/min, and total dosage 1000 kGy. These conditions were maintained fixed while irradiation dosage was changed between 100, 250 and 500 Mrad. We observed enormous and very well defined nanotubes with a length of several nm and width of a few nm, which are hollow and capped at one end. As the level of irradiation is increased to 500 Mrad, onion-like structures were observed.
Structural and electronic properties of graphene with one gold atom at top were calculated using ... more Structural and electronic properties of graphene with one gold atom at top were calculated using the Full-Potential Augmented Plane Waves with Local Orbitals Method and the local density approximation (LDA), within the Density Functional Theory. For the calculations, we use a ...
In a recent paper, Bauer et al. [1] synthesized CePt3Si, a heavy fermion material with both trans... more In a recent paper, Bauer et al. [1] synthesized CePt3Si, a heavy fermion material with both transitions magnetic and superconducting, without inversion center in the crystal structure. This compound is very interesting from many points of view. In the present work, we report the analysis of the electronic structure of the CePt3Si in normal state. The calculation was performed with
AbstactHydrogenated amorphous silicon (a-Si:H) is well known by its applications for solar energy... more AbstactHydrogenated amorphous silicon (a-Si:H) is well known by its applications for solar energy conversion devices in a large scale. Hydrogen has the capability of terminating the dangling bonds in the amorphous silicon structure and improves the optical properties for effective utilization of the solar spectrum. With this, the quantification of the hydrogen content in a-Si:H is an important task in its characterization.Auger electron spectroscopy induced by Ar+ ion bombardment (IAES) has been shown to be sensitive to the presence of hydrogen in a-Si:H [1,2]. The Si-L 2VV peak has a distinctively new shape as compared to electron- xcited. Auger were only some slight differences can be observed [3]. contribution to the IAES to that particular peak coming from de-excitations inside and outside the solid can be identified [4].In this work, IEAS of the Si-L23VV peak were obtained for a-Si:H prepared by glow discharge, grystalline silicon, and crystalline silicon implanted with silicon...
Thick polycrystalline films of silver doped YBCO were produced by the standard screen printing me... more Thick polycrystalline films of silver doped YBCO were produced by the standard screen printing method and irradiated with a source of electrons at 1000 kGy. The critical temperature 0953-2048/12/5/005/img8, the zero resistance temperature 0953-2048/12/5/005/img9, the broadening of the superconductor transition and normal resistance, measured at 298 K, changed substantially in the irradiated sample when compared to the non-irradiated specimen. A
A set of AlN thin films was prepared by reactive magnetron sputtering at room temperature. The ef... more A set of AlN thin films was prepared by reactive magnetron sputtering at room temperature. The effect of oxygen impurities on the structural and optical properties of AlN films is discussed. The structural and optical properties were characterized using X-ray diffraction (XRD) and spectroscopic ellipsometry, respectively. Depending on the deposition conditions, films can grow hexagonal (würzite, P 63 m 3) or cubic (zinc-blende, Fm3m) in microstructure. From the optical measurements, the ellipsometric parameters (ψ, Δ) and the real refractive index as a function of energy were obtained. From the ellipsometric measurements, a model of Lorentz single-oscillator was employed to estimate the optical band gap, Eg. In the theoretical part, a calculation of density of states (DOS) and band structure was performed to be compared with the experimental results.
We investigated the flux pinning behavior induced by gamma irradiation in Y1Ba2Cu3O(7-x) silver-a... more We investigated the flux pinning behavior induced by gamma irradiation in Y1Ba2Cu3O(7-x) silver-added samples. The superconductors were prepared through solid-state route and added with silver in amounts of 0-, 6.5-, and 20-wt%, following which the samples were irradiated by high-energy gamma irradiation (?) at doses of 0, 500, and 1500 kGy at the dosage rate of 8.2 kGy/h. We performed
... Rev. B., 28 (1983) 116i. [8] C. Natarajan, PB Abel andR.W. Hoffman, Z Vac. Sci. Technol. A, 3... more ... Rev. B., 28 (1983) 116i. [8] C. Natarajan, PB Abel andR.W. Hoffman, Z Vac. Sci. Technol. A, 3 (1985) 1309. ... Sci., 331-333 (1995) 1050. [13]A. Duarte-Moller, L. Cota-Araiza, GA Hirata, L. Morales de la Garza, DH Galv~n and M. Avalos-Borja, AppI. Surf. ...
In this work, we report the production of NbSe2 (niobium diselenide) nanotubes formed by irradiat... more In this work, we report the production of NbSe2 (niobium diselenide) nanotubes formed by irradiating NbSe2 with high doses of electron irradiation. The apparatus used for the irradiation was a 2 MeV Van de Graaff accelerator at the following conditions: voltage 1.3 MeV, current 5 μA, dose rate 25 kGy/min, and total dosage 1000 kGy. These conditions were maintained fixed while irradiation dosage was changed between 100, 250 and 500 Mrad. We observed enormous and very well defined nanotubes with a length of several nm and width of a few nm, which are hollow and capped at one end. As the level of irradiation is increased to 500 Mrad, onion-like structures were observed.
Structural and electronic properties of graphene with one gold atom at top were calculated using ... more Structural and electronic properties of graphene with one gold atom at top were calculated using the Full-Potential Augmented Plane Waves with Local Orbitals Method and the local density approximation (LDA), within the Density Functional Theory. For the calculations, we use a ...
In a recent paper, Bauer et al. [1] synthesized CePt3Si, a heavy fermion material with both trans... more In a recent paper, Bauer et al. [1] synthesized CePt3Si, a heavy fermion material with both transitions magnetic and superconducting, without inversion center in the crystal structure. This compound is very interesting from many points of view. In the present work, we report the analysis of the electronic structure of the CePt3Si in normal state. The calculation was performed with
AbstactHydrogenated amorphous silicon (a-Si:H) is well known by its applications for solar energy... more AbstactHydrogenated amorphous silicon (a-Si:H) is well known by its applications for solar energy conversion devices in a large scale. Hydrogen has the capability of terminating the dangling bonds in the amorphous silicon structure and improves the optical properties for effective utilization of the solar spectrum. With this, the quantification of the hydrogen content in a-Si:H is an important task in its characterization.Auger electron spectroscopy induced by Ar+ ion bombardment (IAES) has been shown to be sensitive to the presence of hydrogen in a-Si:H [1,2]. The Si-L 2VV peak has a distinctively new shape as compared to electron- xcited. Auger were only some slight differences can be observed [3]. contribution to the IAES to that particular peak coming from de-excitations inside and outside the solid can be identified [4].In this work, IEAS of the Si-L23VV peak were obtained for a-Si:H prepared by glow discharge, grystalline silicon, and crystalline silicon implanted with silicon...
Thick polycrystalline films of silver doped YBCO were produced by the standard screen printing me... more Thick polycrystalline films of silver doped YBCO were produced by the standard screen printing method and irradiated with a source of electrons at 1000 kGy. The critical temperature 0953-2048/12/5/005/img8, the zero resistance temperature 0953-2048/12/5/005/img9, the broadening of the superconductor transition and normal resistance, measured at 298 K, changed substantially in the irradiated sample when compared to the non-irradiated specimen. A
A set of AlN thin films was prepared by reactive magnetron sputtering at room temperature. The ef... more A set of AlN thin films was prepared by reactive magnetron sputtering at room temperature. The effect of oxygen impurities on the structural and optical properties of AlN films is discussed. The structural and optical properties were characterized using X-ray diffraction (XRD) and spectroscopic ellipsometry, respectively. Depending on the deposition conditions, films can grow hexagonal (würzite, P 63 m 3) or cubic (zinc-blende, Fm3m) in microstructure. From the optical measurements, the ellipsometric parameters (ψ, Δ) and the real refractive index as a function of energy were obtained. From the ellipsometric measurements, a model of Lorentz single-oscillator was employed to estimate the optical band gap, Eg. In the theoretical part, a calculation of density of states (DOS) and band structure was performed to be compared with the experimental results.
We investigated the flux pinning behavior induced by gamma irradiation in Y1Ba2Cu3O(7-x) silver-a... more We investigated the flux pinning behavior induced by gamma irradiation in Y1Ba2Cu3O(7-x) silver-added samples. The superconductors were prepared through solid-state route and added with silver in amounts of 0-, 6.5-, and 20-wt%, following which the samples were irradiated by high-energy gamma irradiation (?) at doses of 0, 500, and 1500 kGy at the dosage rate of 8.2 kGy/h. We performed
... Rev. B., 28 (1983) 116i. [8] C. Natarajan, PB Abel andR.W. Hoffman, Z Vac. Sci. Technol. A, 3... more ... Rev. B., 28 (1983) 116i. [8] C. Natarajan, PB Abel andR.W. Hoffman, Z Vac. Sci. Technol. A, 3 (1985) 1309. ... Sci., 331-333 (1995) 1050. [13]A. Duarte-Moller, L. Cota-Araiza, GA Hirata, L. Morales de la Garza, DH Galv~n and M. Avalos-Borja, AppI. Surf. ...
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