13.3 A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique | IEEE Conference Publication | IEEE Xplore
Location via proxy:
[ UP ]
[Report a bug]
[Manage cookies]
No cookies
No scripts
No ads
No referrer
Show this form