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From 2D to Monolithic 3D: Design Possibilities, Expectations and Challenges

Published: 29 March 2015 Publication History

Abstract

Design of conventional 2D integrated circuits is becoming more and more challenging as we strive to keep on following Moore's law. Cost, thermal behavior, multiple patterning, increasing number of design rules, transistor characteristics, variability and back end properties coupled with a constant need for a higher integration of functions / peripherals are creating an increasingly complex equation to solve for designers. Moving to the next node and taking advantage of the technology are now far from being straightforward as time to market has never been so short for industry. In order to overcome or at least postpone the time when we'll have to face the "next node migration constraints", a possible solution could be staying at the same node and go 3D with possible benefits such as wire length reduction, power savings and increased operating frequency. Since more than ten years now, interconnect technologies like Through Silicon Via (TSV), High Density (HD)-TSV and Copper to Copper (Cu-Cu) have arisen to take advantage of this possible 3-dimensional physical implementation with proofs of concept [1] or more recently industrial products [2]. Main drawback of these technologies is that they are not shrinking at the same speed as transistors are, making them somehow power hungry; moreover the more they will shrink, the more precision will be needed for chip to chip alignment. To reach the highest possible standard cell and tier to tier interconnect densities required for cost-effective chips, 3D sequential integration process [3][4][5] (also known as Monolithic 3D or CoolCubeTM) is currently developed with main features being sequential fabrication of MOS layers and correlation of tier to tier interconnect size with process node allowing fine-grain 3D partitioning of designs. These particularities make it a durable opportunity to slow down next node design migration while still improving integration. To fully benefit from CoolCubeTM technology, a whole new way of designing circuits, from synthesis to place and route, will be required as some new challenges will arise. The point of this presentation is to show the possible use and limitations of the aforementioned technologies with a focus on Monolithic 3D and to give some insights about market expectations, challenges and available design techniques.

References

[1]
B. Black, D. W. Nelson, C. Webb and N. Samra, 3D processing technology and its impact on iA32 microprocessors. In proceedings of the 2004 IEEE International Conference on Computer Design (ICCD).
[2]
Samsung Starts Mass Producing Industry's First 3D TSV Technology Based DDR4 Modules for Enterprise Servers, Seoul, Korea on August 28th 2014, http://www.samsung.com/global/business/semiconductor/news-events/press-releases/printer?newsId=13602
[3]
P. Batude, B. Sklenard, C. Fenouillet-Beranger, B. Previtali, C. Tabone, O. Rozeau, O. Billoint, O. Turkyilmaz, H. Sarhan, S. Thuries, G. Cibrario, L. Brunet, F. Deprat, J. E. Michallet, F. Clermidy, M. Vinet. 3D sequential integration opportunities and technology optimization. In proceedings of the 2014 IEEE Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
[4]
M. Shulaker, T. Wu, A. Pal, K. Saraswat, H.-S. P. Wong and S. Mitra, Monolithic 3D Integration of Logic and Memory: Carbon Nanotube FETs, Resistive RAM, and Silicon FETs. In Proceedings of the 2014 IEEE International Electron Devices Meeting (IEDM).
[5]
Z. Or-Bach. The monolithic 3D advantage: Monolithic 3D is far more than just an alternative to 0.7x scaling. In proceedings of the 2013 IEEE 3D Systems Integration Conference (3DIC).

Cited By

View all
  • (2018)Mono3D: Open Source Cell Library for Monolithic 3-D Integrated CircuitsIEEE Transactions on Circuits and Systems I: Regular Papers10.1109/TCSI.2017.276833065:3(1075-1085)Online publication date: Mar-2018
  • (2017)Improving Detailed Routability and Pin Access with 3D Monolithic Standard CellsProceedings of the 2017 ACM on International Symposium on Physical Design10.1145/3036669.3036676(107-112)Online publication date: 19-Mar-2017
  • (2017)A partitioning-free methodology for optimized gate-level monolithic 3D designs2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)10.1109/S3S.2017.8309221(1-2)Online publication date: Oct-2017
  • Show More Cited By

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  1. From 2D to Monolithic 3D: Design Possibilities, Expectations and Challenges

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      cover image ACM Conferences
      ISPD '15: Proceedings of the 2015 Symposium on International Symposium on Physical Design
      March 2015
      204 pages
      ISBN:9781450333993
      DOI:10.1145/2717764
      Permission to make digital or hard copies of part or all of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for third-party components of this work must be honored. For all other uses, contact the Owner/Author.

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      Published: 29 March 2015

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      1. coolcube™
      2. cu-cu
      3. design
      4. monolithic 3d
      5. place&route
      6. tsv

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      March 29 - April 1, 2015
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      ISPD '15 Paper Acceptance Rate 14 of 37 submissions, 38%;
      Overall Acceptance Rate 62 of 172 submissions, 36%

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      Cited By

      View all
      • (2018)Mono3D: Open Source Cell Library for Monolithic 3-D Integrated CircuitsIEEE Transactions on Circuits and Systems I: Regular Papers10.1109/TCSI.2017.276833065:3(1075-1085)Online publication date: Mar-2018
      • (2017)Improving Detailed Routability and Pin Access with 3D Monolithic Standard CellsProceedings of the 2017 ACM on International Symposium on Physical Design10.1145/3036669.3036676(107-112)Online publication date: 19-Mar-2017
      • (2017)A partitioning-free methodology for optimized gate-level monolithic 3D designs2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)10.1109/S3S.2017.8309221(1-2)Online publication date: Oct-2017
      • (2017)Open source cell library Mono3D to develop large-scale monolithic 3D integrated circuits2017 IEEE International Symposium on Circuits and Systems (ISCAS)10.1109/ISCAS.2017.8050945(1-4)Online publication date: May-2017
      • (2016) Footprint-efficient and power-saving monolithic IoT 3D + IC constructed by BEOL-compatible sub-10nm high aspect ratio (AR>7) single-grained Si FinFETs with record high Ion of 0.38 mA/μm and steep-swing of 65 mV/dec. and Ion/Ioff ratio of 8 2016 IEEE International Electron Devices Meeting (IEDM)10.1109/IEDM.2016.7838379(9.1.1-9.1.4)Online publication date: Dec-2016
      • (2016)Impact of intermediate BEOL technology on standard cell performances of 3D VLSI2016 46th European Solid-State Device Research Conference (ESSDERC)10.1109/ESSDERC.2016.7599625(218-221)Online publication date: Sep-2016

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