Le livre porte sur la demarche experimentale de la synthese, de la fabrication et de la caracteri... more Le livre porte sur la demarche experimentale de la synthese, de la fabrication et de la caracterisation des couches minces de sulfure d’indium utilise comme fenetre optique pour les cellules solaires a base de CuInS2 et ce dans le but de contribuer a l’amelioration de leur rendement de conversion. Le choix vient s’inscrire dans la logique de remplacer le CdS qui est non stable et trop polluant. Dans cet objectif l’auteur a synthetise et elabore des couches minces d’In2S3 repondant aux exigences d’une bonne alternative au CdS. Les conditions experimentales sont optimisees. L’auteur a etudie aussi le comportement optique dans le domaine spectral du visible en appliquant le modele theorique de Wemple Didomenico. Le livre presente encore l’effet du dopage des couches au sodium et donne une etude des proprietes electriques par effet hall des couches In2S3 et NaxIn2-xS3 deposees sur verre, quartz et SnO2/pyrex. Enfin, l’auteur donne une discussion approfondie des resultats et une conclusi...
Materials Science in Semiconductor Processing, 2013
ABSTRACT In2S3 thin filmsweregrownbythechemicalspraypyrolysis(CSP)methodusingindium chlorideandth... more ABSTRACT In2S3 thin filmsweregrownbythechemicalspraypyrolysis(CSP)methodusingindium chlorideandthioureaasprecursorsatamolarratioofS:In¼2.5.Thedepositionwas carriedoutat350 1C onquartzsubstrates.Thefilmthicknessisabout1 mm. Thefilmswere then annealedfor2hat550,600,650and700 1C inoxygenflow.Thisprocessallowsthe transformationofnanocrystalIn2O3 from In2S3 and thereactioniscompleteat600 1C. X- ray diffractionspectrashowthatIn2O3 films arepolycrystallinewithacubicphaseand preferentially orientedtowards(222).Thefilmgrainsizeincreasesfrom19to25nmand RMSvaluesincreasefrom9to30nm.In2O3 filmsexhibittransparencyover70–85% inthe visibleandinfraredregionsduetothethicknessandcrystallinepropertiesofthefilms. The opticalbandgapisfoundtovaryintherange3.87–3.95 eVfordirecttransitions.Hall effectmeasurementsatroomtemperatureshowthatresistivityisdecreasedfrom117to 27 Ω cm. Acarrierconcentrationof1�1016 cm−3 and mobilityofabout117cm2 V−1 s−1 are obtainedat700 1C.
International Journal of Renewable Energy Technology
In recent years, In2S3 is considered as a promising buffer layer in the fabrication of heterojunc... more In recent years, In2S3 is considered as a promising buffer layer in the fabrication of heterojunction solar cells. Film thickness is one of the important parameters that alters the physical characteristics of the grown layers significantly. The effect of film thickness on the structural, morphological and optical properties of evaporated In2S3 layers has been studied. In2S3 thin films with different thicknesses in the range, 600–900 nm were deposited at a constant substrate temperature of 240˚C. The films were deposited by vacuum thermal evaporation technique on glass substrates. Films were characterized using X-Ray Diffraction (XRD), Energy Dispersive X-ray Analysis (EDX), Scanning Electron Microscopy (SEM) and optical absorption and transmission measurements. XRD pattern revealed that the layers are amorphous in nature and recrystallized after annealing in nitrogen atmosphere at 300°C during 30mn. The optical properties of the films were studied as a function of the thickness laye...
In2S3 films have been deposited on SnO2 pyrex substrates by vacuum thermal evaporation technique.... more In2S3 films have been deposited on SnO2 pyrex substrates by vacuum thermal evaporation technique. The bilayers are intended for photovoltaic applications. Different characterization methods have been employed: optical properties of the films were investigated from transmittance measurements, structural properties by XRD, and surface morphology by SEM microscopy analysis. X-ray diffraction shows crystallized films corresponding to In2S3 phase. According to SEM image, the film is very compact and homogeneus microstructure. Electrical measurements by Hall effect shows that resistivity is about 0.910-3Ω.cm, the mobility is 49.3cm2/Vsand the concentration of carriers is 1.41019cm-3. The determination of the carrier type by the hot point and hall effect gives the same result. The layer has a rather low resistance of 60 Ω. The conductance and capacitancecharacterization at ambient temperature in dark and under illumination were also investigated and gives interest physical properties for...
International Journal of Sciences: Basic and Applied Research (IJSBAR)
Abstract: In the present study the optical properties of indium sulphide thin films deposited by ... more Abstract: In the present study the optical properties of indium sulphide thin films deposited by vacuum thermal evaporation method at different substrate temperature are investigated. Before being optically characterized, the compositions as well as the crystalline properties of the film have been checked with the help of Energy Dispersive Spectroscopy (EDX), X-Ray Diffraction (XRD) analyses and Atomic Force Microscopy (AFM). The optical absorption coefficient α has been deduced from reflectivity R (λ) and transmission T (λ) measurements over the wavelength range 300-1800 nm. The direct band gap is about 2.02 eV for layers deposited at 240°C. The refractive index and extinction coefficient are dependent on substrate temperature. The static refractive index n (), the oscillation energy E0 and the dispersion energy Ed are calculated using the theoretical Wemple-Didomenico model. It was found that the refractive index dispersion data obeyed the single oscillator of this model, from wh...
ABSTRACT Optical properties of In2S3 thin films grown by vacuum thermal evaporation method have b... more ABSTRACT Optical properties of In2S3 thin films grown by vacuum thermal evaporation method have been studied as function of Na incorporated In2S3 films. The optical constants of the deposited films were obtained from the analysis of the experimental recorded transmission and reflectance spectral data over the wavelength range of 300–1800nm. It has been found that the refractive index and extinction coefficient are dependent on the Na incorporated In2S3 films annealed under nitrogen at 300°C for 2h. Using the Wemple-Didomenico model, we calculated the static refractive index n(λ), the oscillation energy gap E0 and the dispersion energy Ed. The dispersion energy changes very slowly as function of at.% Na. The complex dielectric constants of In2S3 films have been calculated in the investigated wavelength range. It was found that the refractive index dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion parameters and the high-frequency dielectric constant were determined. The electric free carrier susceptibility and the carrier concentration on the effective mass ratio were estimated.The values of the electric permittivity are practically constant in the spectral field of the visible range. The values of the oscillation energy describe the expression E0=1.5 Eg and check the Wemple-Didomenico model.
Materials Science in Semiconductor Processing, 2013
ABSTRACT In2S3 thin filmsweregrownbythechemicalspraypyrolysis(CSP)methodusingindium chlorideandth... more ABSTRACT In2S3 thin filmsweregrownbythechemicalspraypyrolysis(CSP)methodusingindium chlorideandthioureaasprecursorsatamolarratioofS:In¼2.5.Thedepositionwas carriedoutat350 1C onquartzsubstrates.Thefilmthicknessisabout1 mm. Thefilmswere then annealedfor2hat550,600,650and700 1C inoxygenflow.Thisprocessallowsthe transformationofnanocrystalIn2O3 from In2S3 and thereactioniscompleteat600 1C. X- ray diffractionspectrashowthatIn2O3 films arepolycrystallinewithacubicphaseand preferentially orientedtowards(222).Thefilmgrainsizeincreasesfrom19to25nmand RMSvaluesincreasefrom9to30nm.In2O3 filmsexhibittransparencyover70–85% inthe visibleandinfraredregionsduetothethicknessandcrystallinepropertiesofthefilms. The opticalbandgapisfoundtovaryintherange3.87–3.95 eVfordirecttransitions.Hall effectmeasurementsatroomtemperatureshowthatresistivityisdecreasedfrom117to 27 Ω cm. Acarrierconcentrationof1�1016 cm−3 and mobilityofabout117cm2 V−1 s−1 are obtainedat700 1C.
Le livre porte sur la demarche experimentale de la synthese, de la fabrication et de la caracteri... more Le livre porte sur la demarche experimentale de la synthese, de la fabrication et de la caracterisation des couches minces de sulfure d’indium utilise comme fenetre optique pour les cellules solaires a base de CuInS2 et ce dans le but de contribuer a l’amelioration de leur rendement de conversion. Le choix vient s’inscrire dans la logique de remplacer le CdS qui est non stable et trop polluant. Dans cet objectif l’auteur a synthetise et elabore des couches minces d’In2S3 repondant aux exigences d’une bonne alternative au CdS. Les conditions experimentales sont optimisees. L’auteur a etudie aussi le comportement optique dans le domaine spectral du visible en appliquant le modele theorique de Wemple Didomenico. Le livre presente encore l’effet du dopage des couches au sodium et donne une etude des proprietes electriques par effet hall des couches In2S3 et NaxIn2-xS3 deposees sur verre, quartz et SnO2/pyrex. Enfin, l’auteur donne une discussion approfondie des resultats et une conclusi...
Materials Science in Semiconductor Processing, 2013
ABSTRACT In2S3 thin filmsweregrownbythechemicalspraypyrolysis(CSP)methodusingindium chlorideandth... more ABSTRACT In2S3 thin filmsweregrownbythechemicalspraypyrolysis(CSP)methodusingindium chlorideandthioureaasprecursorsatamolarratioofS:In¼2.5.Thedepositionwas carriedoutat350 1C onquartzsubstrates.Thefilmthicknessisabout1 mm. Thefilmswere then annealedfor2hat550,600,650and700 1C inoxygenflow.Thisprocessallowsthe transformationofnanocrystalIn2O3 from In2S3 and thereactioniscompleteat600 1C. X- ray diffractionspectrashowthatIn2O3 films arepolycrystallinewithacubicphaseand preferentially orientedtowards(222).Thefilmgrainsizeincreasesfrom19to25nmand RMSvaluesincreasefrom9to30nm.In2O3 filmsexhibittransparencyover70–85% inthe visibleandinfraredregionsduetothethicknessandcrystallinepropertiesofthefilms. The opticalbandgapisfoundtovaryintherange3.87–3.95 eVfordirecttransitions.Hall effectmeasurementsatroomtemperatureshowthatresistivityisdecreasedfrom117to 27 Ω cm. Acarrierconcentrationof1�1016 cm−3 and mobilityofabout117cm2 V−1 s−1 are obtainedat700 1C.
International Journal of Renewable Energy Technology
In recent years, In2S3 is considered as a promising buffer layer in the fabrication of heterojunc... more In recent years, In2S3 is considered as a promising buffer layer in the fabrication of heterojunction solar cells. Film thickness is one of the important parameters that alters the physical characteristics of the grown layers significantly. The effect of film thickness on the structural, morphological and optical properties of evaporated In2S3 layers has been studied. In2S3 thin films with different thicknesses in the range, 600–900 nm were deposited at a constant substrate temperature of 240˚C. The films were deposited by vacuum thermal evaporation technique on glass substrates. Films were characterized using X-Ray Diffraction (XRD), Energy Dispersive X-ray Analysis (EDX), Scanning Electron Microscopy (SEM) and optical absorption and transmission measurements. XRD pattern revealed that the layers are amorphous in nature and recrystallized after annealing in nitrogen atmosphere at 300°C during 30mn. The optical properties of the films were studied as a function of the thickness laye...
In2S3 films have been deposited on SnO2 pyrex substrates by vacuum thermal evaporation technique.... more In2S3 films have been deposited on SnO2 pyrex substrates by vacuum thermal evaporation technique. The bilayers are intended for photovoltaic applications. Different characterization methods have been employed: optical properties of the films were investigated from transmittance measurements, structural properties by XRD, and surface morphology by SEM microscopy analysis. X-ray diffraction shows crystallized films corresponding to In2S3 phase. According to SEM image, the film is very compact and homogeneus microstructure. Electrical measurements by Hall effect shows that resistivity is about 0.910-3Ω.cm, the mobility is 49.3cm2/Vsand the concentration of carriers is 1.41019cm-3. The determination of the carrier type by the hot point and hall effect gives the same result. The layer has a rather low resistance of 60 Ω. The conductance and capacitancecharacterization at ambient temperature in dark and under illumination were also investigated and gives interest physical properties for...
International Journal of Sciences: Basic and Applied Research (IJSBAR)
Abstract: In the present study the optical properties of indium sulphide thin films deposited by ... more Abstract: In the present study the optical properties of indium sulphide thin films deposited by vacuum thermal evaporation method at different substrate temperature are investigated. Before being optically characterized, the compositions as well as the crystalline properties of the film have been checked with the help of Energy Dispersive Spectroscopy (EDX), X-Ray Diffraction (XRD) analyses and Atomic Force Microscopy (AFM). The optical absorption coefficient α has been deduced from reflectivity R (λ) and transmission T (λ) measurements over the wavelength range 300-1800 nm. The direct band gap is about 2.02 eV for layers deposited at 240°C. The refractive index and extinction coefficient are dependent on substrate temperature. The static refractive index n (), the oscillation energy E0 and the dispersion energy Ed are calculated using the theoretical Wemple-Didomenico model. It was found that the refractive index dispersion data obeyed the single oscillator of this model, from wh...
ABSTRACT Optical properties of In2S3 thin films grown by vacuum thermal evaporation method have b... more ABSTRACT Optical properties of In2S3 thin films grown by vacuum thermal evaporation method have been studied as function of Na incorporated In2S3 films. The optical constants of the deposited films were obtained from the analysis of the experimental recorded transmission and reflectance spectral data over the wavelength range of 300–1800nm. It has been found that the refractive index and extinction coefficient are dependent on the Na incorporated In2S3 films annealed under nitrogen at 300°C for 2h. Using the Wemple-Didomenico model, we calculated the static refractive index n(λ), the oscillation energy gap E0 and the dispersion energy Ed. The dispersion energy changes very slowly as function of at.% Na. The complex dielectric constants of In2S3 films have been calculated in the investigated wavelength range. It was found that the refractive index dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion parameters and the high-frequency dielectric constant were determined. The electric free carrier susceptibility and the carrier concentration on the effective mass ratio were estimated.The values of the electric permittivity are practically constant in the spectral field of the visible range. The values of the oscillation energy describe the expression E0=1.5 Eg and check the Wemple-Didomenico model.
Materials Science in Semiconductor Processing, 2013
ABSTRACT In2S3 thin filmsweregrownbythechemicalspraypyrolysis(CSP)methodusingindium chlorideandth... more ABSTRACT In2S3 thin filmsweregrownbythechemicalspraypyrolysis(CSP)methodusingindium chlorideandthioureaasprecursorsatamolarratioofS:In¼2.5.Thedepositionwas carriedoutat350 1C onquartzsubstrates.Thefilmthicknessisabout1 mm. Thefilmswere then annealedfor2hat550,600,650and700 1C inoxygenflow.Thisprocessallowsthe transformationofnanocrystalIn2O3 from In2S3 and thereactioniscompleteat600 1C. X- ray diffractionspectrashowthatIn2O3 films arepolycrystallinewithacubicphaseand preferentially orientedtowards(222).Thefilmgrainsizeincreasesfrom19to25nmand RMSvaluesincreasefrom9to30nm.In2O3 filmsexhibittransparencyover70–85% inthe visibleandinfraredregionsduetothethicknessandcrystallinepropertiesofthefilms. The opticalbandgapisfoundtovaryintherange3.87–3.95 eVfordirecttransitions.Hall effectmeasurementsatroomtemperatureshowthatresistivityisdecreasedfrom117to 27 Ω cm. Acarrierconcentrationof1�1016 cm−3 and mobilityofabout117cm2 V−1 s−1 are obtainedat700 1C.
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Papers by Abdelmajid TIMOUMI