Effect of shallow doping on performance parameters of single heterojunction solar cell

Fill factor and conversion efficiency of single heterojunction solar cell is analytically computed based on the shallow doping at GaAs quantum well region. Poisson’s equation is solved with suitable boundary condition applied at hetero-interface for both dark and illuminated conditions, corresponding to which open-circuit voltage and short-circuit current are computed. Realistic dependence of minority carrier distribution on material layers and diffusion widths are taken into account for simulation purpose. Result exhibits that variation of acceptor density leads to better outcome in terms of both efficiency and fill factor, which is also critically depends on length of quantum well region. Doping of AlGaAs barrier layer has negligible influence on fill factor and conversion efficiency. Optimized dimension of quantum well layer width is the critical parameter for design of efficient solar cell, as revealed from the analysis.