Electronics

European Journal of Physics, 2006

The Physics Teacher, 2019

In a classical electronic laboratory, there is an experiment where a diode is connected in a series with a resistor and a variable DC voltage source in order to draw the characteristic I-V curve of the diode. Input voltage is gradually increased starting from 0 V, and the potential difference between the diode’s terminals is read by using a voltmeter, and the current flowing through the diode is read by using an ammeter. When the forward voltage exceeds the PN junction’s internal barrier voltage (0.5-0.7 for a Si diode and 0.2-0.3V for a Ge diode), the current begins to pass through. After the internal barrier voltage of the diode, a small increase in the potential difference causes a large increase in the current. In this study, we will focus on a low-cost and easy method of drawing the diode I-V characteristic curve by using the Arduino Uno Board.

In this paper, we have explained the characteristics of semiconductors diodes and its application have influenced the universe beyond anything before they might have thought. While the communications and processing records have been nonetheless essential via the humans, thanks to the semiconductors all vital duties have been conveniently accomplished and infinitely less time has been needed than, for example, during vacuum tubes. The Semiconductor diode that is made from a small piece of semiconductor material, usually silicon, in which half is doped as a p region and half is doped as an n region with a p-n junction and depletion region in between. In order to review the semiconductor diode, we used unbiased, forwardbiased and reverse biased methods. In unbiased condition the external voltage does not apply on the p-n Junction, In forward bias the P-region of the diode is connected with the positive terminal of the battery and N-region is connected with the negative region. While in the reverse bias, the P-type region is connected to negative voltage and N-type is connected to the positive terminal The building blocks of the entire electronics and computing sectors are semi-conductive substances. Without included circuits (chips) which consist of semiconductor substances, compact, lightweight, excessive velocity and coffee-energy gadgets might no longer be possible. This essay explores the general records, description and impact of semiconductors on semiconductors. Statistics on the effects of temperature on mosfet band difference, carrier density, mobility, provider diffusion and speed saturation, contemporary density, threshold voltage, leakage cutting-edge and interconnection resistance are given below. We also provide the applications of semiconductor materials in different sectors of modern electronics and communications.

The diode is one of the important semiconductor devices used in many commercial electronic equipments. It is a unidirectional device, in which forward current rises with an increase in forward voltage. Earlier studies on diode were done with anode at positive and cathode at negative polarity voltage in order to make the diode act as a closed switch [1]. In this paper, both anode and cathode are connected to positive voltages to act as a closed switch and the corresponding forward V-I characteristics are obtained. In addition to it, reverse characteristics also obtained for different voltage magnitudes. Here, MATLAB Simulink is used to obtain theoretical values. Also, experimental setup with IN4148 and 460 Ohms are used and practical V-I characteristics are obtained.

2018

Main focus of the paper is based upon the conduction phenomena and the energy band formation characteristics of the novel device, which is named as v-diode i.e. variable diode. The concept of this diode is based upon the basic semiconductor physics. This device can operate in both biasing: forward and reverse. Here semiconductor characteristics inversion is used to achieve the v-diode characteristics. This diode operates as n-p diode and in some cases acts as p+ i n+ diode depending on the biasing polarity. Mainly the energy band formation, band energy changing characteristics are discussed here broadly. All the calculations justifies the device characteristics and band-gap modulation technique of this diode. The fundamental expressions of diode have used here and some auxiliary equations have derived from those expressions to achieve the working characteristics of this device. This paper is presented theoretically along with the all clarifications about the major characteristics of...

In this article, the forward and reverse biases characteristics of a p-n junction diode using a Keithley 2400 source measure unit were measured and the important parameters of diode such as, forward Voltage Test (V F) for forward-bias were found to be 0.625, 0.65, and 0.7V for different sweep delay 1sec,0.01sec and 0.1sec respectively and for the reverse-bias, the Breakdown Voltage Test (V R), and Leakage Current Test (I R),and Ideality factor (k) were found to be-11V,-3.03nA,and 0.9857 and ,respectively. The graphs of I-V Characteristics were drawn for different sweep delay time of 0.01s, 0.1s and 1s for both forward-bias and reverse-bias.

The beauty of a diode lies in its voltage-dependent nonlinear resistance. The voltage on a charging and discharging capacitor through a reverse-biased diode is calculated from basic equations and is found to be in good agreement with experimental measurements. Instead of the exponential dependence of charging and discharging voltages with time for a resistor-capacitor circuit, a linear time dependence is found when the resistor is replaced by a reverse-biased diode. Thus, well controlled positive and negative ramp voltages are obtained from the charging and discharging diode-capacitor circuits. This experiment can readily be performed in an introductory physics and electronics laboratory.