Academia.edu no longer supports Internet Explorer.
To browse Academia.edu and the wider internet faster and more securely, please take a few seconds to upgrade your browser.
Positron lifetime studies of Al-Si Ohmic contact formed by rapid thermal processing
Positron lifetime studies of Al-Si Ohmic contact formed by rapid thermal processing
SPIE Proceedings, 1992
Nitin Kulkarni
Abstract
Due to the involvement of shorter time and energy consumption, rapid thermal processing (RTP) technique finds its success in Semiconductor processing. The Al-Si ohmic contact has been formed and the effect of alloying temperatures between 450 degree(s)C and 550 degree(s)C on this contact has been studied. The nature of the contact is probed well by positron lifetime spectroscopy (PLTS). The
nitin kulkarni hasn't uploaded this paper.
Let nitin know you want this paper to be uploaded.
Ask for this paper to be uploaded.
People also downloaded these PDFs
People also downloaded these PDFs
People also downloaded these PDFs
- Find new research papers in:
- Physics
- Chemistry
- Biology
- Health Sciences
- Ecology
- Earth Sciences
- Cognitive Science
- Mathematics
- Computer Science