Crystallinity of NixTi1-x thin films deposited on a substrate using magnetron sputtering technique is strongly influenced by substrate bias voltage. The substrate bias induces higher flux and momentum of Ar+ ions striking deposited... more
Crystallinity of NixTi1-x thin films deposited on a substrate using magnetron sputtering technique is strongly influenced by substrate bias voltage. The substrate bias induces higher flux and momentum of Ar+ ions striking deposited NixTi1-x thin film. Using computational fluid dynamics approach on COMSOL platform, Ar+ flux in the entire sputtering chamber and on the deposited film was computed. Based on the Ar+ flux Monte Carlo approaches at the atomic scale computed the (a) flux of Ni/Ti adatoms reaching the thin film as well as the (b) vacancy generated due to re-sputtering. Finally classical molecular dynamics based model predicted the stability of crystalline and amorphous phases based on the fraction of vacancies predicted using Monet Carlo approach. Crystallinity predictions were experimental validated using High resolution transmission electron microscopy characterization of NixTi1-x thin film deposited under different substrate biases.
