| Year |
Citation |
Score |
| 2020 |
Bizindavyi J, Verhulst AS, Soree B, Groeseneken G. Signature of Ballistic Band-Tail Tunneling Current in Tunnel FET Ieee Transactions On Electron Devices. 67: 3486-3491. DOI: 10.1109/Ted.2020.3004119 |
0.449 |
|
| 2020 |
Verhulst AS, Saeidi A, Stolichnov I, Alian A, Iwai H, Collaert N, Ionescu AM. Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization” Ieee Transactions On Electron Devices. 67: 3017-3017. DOI: 10.1109/Ted.2019.2954585 |
0.375 |
|
| 2019 |
Xiang Y, Verhulst AS, Yakimets D, Parvais B, Mocuta A, Groeseneken G. Process-Induced Power-Performance Variability in Sub-5-nm III–V Tunnel FETs Ieee Transactions On Electron Devices. 66: 2802-2808. DOI: 10.1109/Ted.2019.2909217 |
0.418 |
|
| 2019 |
Bizindavyi J, Verhulst AS, Verreck D, Soree B, Groeseneken G. Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices Ieee Electron Device Letters. 40: 1864-1867. DOI: 10.1109/Led.2019.2939668 |
0.453 |
|
| 2019 |
Mohammed M, Verhulst AS, Verreck D, Put MLVd, Magnus W, Sorée B, Groeseneken G. Phonon-assisted tunneling in direct-bandgap semiconductors Journal of Applied Physics. 125: 15701. DOI: 10.1063/1.5044256 |
0.442 |
|
| 2018 |
Verreck D, Verhulst AS, Xiang Y, Yakimets D, Kazzi SE, Parvais B, Groeseneken G, Collaert N, Mocuta A. Built-In Sheet Charge As an Alternative to Dopant Pockets in Tunnel Field-Effect Transistors` Ieee Journal of the Electron Devices Society. 6: 658-663. DOI: 10.1109/Jeds.2018.2835501 |
0.449 |
|
| 2018 |
Bizindavyi J, Verhulst AS, Smets Q, Verreck D, Soree B, Groeseneken G. Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes Ieee Journal of the Electron Devices Society. 6: 633-641. DOI: 10.1109/Jeds.2018.2834825 |
0.448 |
|
| 2018 |
Gupta S, Simoen E, Loo R, Smets Q, Verhulst A, Lauwaert J, Vrielinck H, Heyns M. Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra Applied Physics Letters. 113: 232101. DOI: 10.1063/1.5058201 |
0.375 |
|
| 2018 |
Verreck D, Verhulst AS, Put MLVd, Sorée B, Magnus W, Collaert N, Mocuta A, Groeseneken G. Self-consistent procedure including envelope function normalization for full-zone Schrödinger-Poisson problems with transmitting boundary conditions Journal of Applied Physics. 124: 204501. DOI: 10.1063/1.5047087 |
0.34 |
|
| 2018 |
Kazzi SE, Alian A, Hsu B, Verhulst AS, Walke A, Favia P, Douhard B, Lu W, Alamo JAd, Collaert N, Merckling C. Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode Journal of Crystal Growth. 484: 86-91. DOI: 10.1016/J.Jcrysgro.2017.12.035 |
0.401 |
|
| 2017 |
Smets Q, Verhulst AS, Simoen E, Gundlach D, Richter C, Collaert N, Heyns MM. Calibration of Bulk Trap-Assisted Tunneling and Shockley–Read–Hall Currents and Impact on InGaAs Tunnel-FETs Ieee Transactions On Electron Devices. 64: 3622-3626. DOI: 10.1109/Ted.2017.2724144 |
0.439 |
|
| 2017 |
Bordallo CCM, Martino JA, Agopian PGD, Alian A, Mols Y, Rooyackers R, Vandooren A, Verhulst AS, Simoen E, Claeys C, Collaert N. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of In x Ga 1– x As nTFETs Ieee Transactions On Electron Devices. 64: 3595-3600. DOI: 10.1109/Ted.2017.2721110 |
0.39 |
|
| 2017 |
Smets Q, Verhulst A, Kim J, Campbell JP, Nminibapiel D, Veksler D, Shrestha P, Pandey R, Simoen E, Gundlach D, Richter C, Cheung KP, Datta S, Mocuta A, Collaert N, et al. Pulsed I-V on TFETs: Modeling and Measurements Ieee Transactions On Electron Devices. 64: 1489-1497. DOI: 10.1109/Ted.2017.2670660 |
0.34 |
|
| 2016 |
Smets Q, Verhulst AS, El Kazzi S, Gundlach D, Richter CA, Mocuta A, Collaert N, Thean AVY, Heyns MM. Calibration of the Effective Tunneling Bandgap in GaAsSb/InGaAs for Improved TFET Performance Prediction Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2604860 |
0.444 |
|
| 2016 |
Franco J, Alian A, Vandooren A, Verhulst AS, Linten D, Collaert N, Thean A. Intrinsic Robustness of TFET Subthreshold Swing to Interface and Oxide Traps: A Comparative PBTI Study of InGaAs TFETs and MOSFETs Ieee Electron Device Letters. 37: 1055-1058. DOI: 10.1109/Led.2016.2584983 |
0.428 |
|
| 2016 |
Verreck D, Verhulst AS, Van De Put ML, Sorée B, Collaert N, Mocuta A, Thean A, Groeseneken G. Uniform strain in heterostructure tunnel field-effect transistors Ieee Electron Device Letters. 37: 337-340. DOI: 10.1109/Led.2016.2519681 |
0.398 |
|
| 2016 |
Bordallo C, Martino JA, Agopian PGD, Alian A, Mols Y, Rooyackers R, Vandooren A, Verhulst AS, Smets Q, Simoen E, Claeys C, Collaert N. Analog parameters of solid source Zn diffusion In X Ga1−X As nTFETs down to 10 K Semiconductor Science and Technology. 31: 124001. DOI: 10.1088/0268-1242/31/12/124001 |
0.345 |
|
| 2016 |
Mohammed M, Verhulst AS, Verreck D, Put MVd, Simoen E, Sorée B, Kaczer B, Degraeve R, Mocuta A, Collaert N, Thean A, Groeseneken G. Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides Journal of Applied Physics. 120: 245704. DOI: 10.1063/1.4972482 |
0.41 |
|
| 2016 |
Alian A, Mols Y, Bordallo CCM, Verreck D, Verhulst A, Vandooren A, Rooyackers R, Agopian PGD, Martino JA, Thean A, Lin D, Mocuta D, Collaert N. InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature Applied Physics Letters. 109: 243502. DOI: 10.1063/1.4971830 |
0.378 |
|
| 2015 |
Smets Q, Verhulst AS, El Kazzi S, Mocuta A, Thean VY, Heyns MM. Novel method to determine the band offset in hetero staggered bandgap TFET using Esaki diodes Device Research Conference - Conference Digest, Drc. 2015: 251-252. DOI: 10.1109/DRC.2015.7175664 |
0.323 |
|
| 2015 |
Verreck D, Verhulst AS, Van De Put M, Sorée B, Magnus W, Mocuta A, Collaert N, Thean A, Groeseneken G. Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors Journal of Applied Physics. 118. DOI: 10.1063/1.4931890 |
0.398 |
|
| 2015 |
Smets Q, Verhulst AS, El Kazzi S, Verreck D, Richard O, Bender H, Collaert N, Mocuta A, Thean A, Heyns MM. Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements Applied Physics Letters. 107. DOI: 10.1063/1.4928761 |
0.439 |
|
| 2015 |
Verreck D, Verhulst AS, Sorée B, Collaert N, Mocuta A, Thean A, Groeseneken G. Erratum: "Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic" [Appl. Phys. Lett. 105, 243506 (2014)] Applied Physics Letters. 106: 49902. DOI: 10.1063/1.4906935 |
0.348 |
|
| 2015 |
Collaert N, Alian A, Arimura H, Boccardi G, Eneman G, Franco J, Ivanov T, Lin D, Loo R, Merckling C, Mitard J, Pourghaderi MA, Rooyackers R, Sioncke S, Sun JW, ... ... Verhulst A, et al. Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap Microelectronic Engineering. 132: 218-225. DOI: 10.1016/J.Mee.2014.08.005 |
0.378 |
|
| 2015 |
El Kazzi S, Smets Q, Ezzedini M, Rooyackers R, Verhulst A, Douhard B, Bender H, Collaert N, Merckling C, Heyns MM, Thean A. Staggered band gap n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions Journal of Crystal Growth. 424: 62-67. DOI: 10.1016/J.Jcrysgro.2015.05.004 |
0.428 |
|
| 2014 |
Rooyackers R, Vandooren A, Verhulst AS, Walke AM, Simoen E, Devriendt K, Lo-Corotondo S, Demand M, Bryce G, Loo R, Hikavyy A, Vandeweyer T, Huyghebaert C, Collaert N, Thean AVY. Ge-source vertical tunnel FETs using a novel replacement-source integration scheme Ieee Transactions On Electron Devices. 61: 4032-4039. DOI: 10.1109/Ted.2014.2365142 |
0.431 |
|
| 2014 |
Walke AM, Vandooren A, Rooyackers R, Leonelli D, Hikavyy A, Loo R, Verhulst AS, Kao KH, Huyghebaert C, Groeseneken G, Rao VR, Bhuwalka KK, Heyns MM, Collaert N, Thean AVY. Fabrication and analysis of a Si/Si0.55Ge0.45 heterojunction line tunnel FET Ieee Transactions On Electron Devices. 61: 707-715. DOI: 10.1109/Ted.2014.2299337 |
0.489 |
|
| 2014 |
Vandooren A, Walke AM, Verhulst AS, Rooyackers R, Collaert N, Thean AVY. Investigation of the subthreshold swing in vertical tunnel-FETs ysing H2 and D2 anneals Ieee Transactions On Electron Devices. 61: 359-364. DOI: 10.1109/Ted.2013.2294535 |
0.415 |
|
| 2014 |
Verreck D, Verhulst AS, Sorée B, Collaert N, Mocuta A, Thean A, Groeseneken G. Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic Applied Physics Letters. 105. DOI: 10.1063/1.4904712 |
0.446 |
|
| 2014 |
Kao KH, Verhulst AS, Rooyackers R, Douhard B, Delmotte J, Bender H, Richard O, Vandervorst W, Simoen E, Hikavyy A, Loo R, Arstila K, Collaert N, Thean A, Heyns MM, et al. Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors Journal of Applied Physics. 116. DOI: 10.1063/1.4903288 |
0.392 |
|
| 2014 |
Smets Q, Verhulst AS, Martens K, Lin HC, El Kazzi S, Verreck D, Simoen E, Collaert N, Thean A, Raskin JP, Heyns MM. Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification Applied Physics Letters. 105. DOI: 10.1063/1.4902117 |
0.465 |
|
| 2014 |
Verhulst AS, Verreck D, Pourghaderi MA, Van De Put M, Sorée B, Groeseneken G, Collaert N, Thean AVY. Can p-channel tunnel field-effect transistors perform as good as n-channel? Applied Physics Letters. 105. DOI: 10.1063/1.4891348 |
0.456 |
|
| 2014 |
Smets Q, Verreck D, Verhulst AS, Rooyackers R, Merckling C, Van De Put M, Simoen E, Vandervorst W, Collaert N, Thean VY, Sorée B, Groeseneken G, Heyns MM. InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models Journal of Applied Physics. 115. DOI: 10.1063/1.4875535 |
0.431 |
|
| 2014 |
Verreck D, Van De Put M, Sorée B, Verhulst AS, Magnus W, Vandenberghe WG, Collaert N, Thean A, Groeseneken G. Quantum mechanical solver for confined heterostructure tunnel field-effect transistors Journal of Applied Physics. 115. DOI: 10.1063/1.4864128 |
0.431 |
|
| 2014 |
Kao KH, Verhulst AS, Van De Put M, Vandenberghe WG, Soree B, Magnus W, De Meyer K. Tensile strained Ge tunnel field-effect transistors: K · p material modeling and numerical device simulation Applied Physics Letters. 104. DOI: 10.1063/1.4862806 |
0.397 |
|
| 2013 |
Smets Q, Verhulst AS, Rooyackers R, Merckling C, Lin D, Simoen E, Alian A, Cantoro M, Pourghaderi A, Kao KH, Verreck D, Meyer KD, Collaert N, Thean VY, Heyns MM. In 0.53 Ga 0.47 As Diodes for Band-to-Band Tunneling Calibration and n- and p-LineTFET performance prediction The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2013.D-7-4 |
0.343 |
|
| 2013 |
Kaczer B, Clima S, Tomida K, Govoreanu B, Popovici M, Kim MS, Swerts J, Belmonte A, Wang WC, Afanas'Ev VV, Verhulst AS, Pourtois G, Groeseneken G, Jurczak M. Considerations for further scaling of metal-insulator-metal DRAM capacitors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4767125 |
0.31 |
|
| 2013 |
Walke AM, Verhulst AS, Vandooren A, Verreck D, Simoen E, Rao VR, Groeseneken G, Collaert N, Thean AVY. Part I: Impact of field-induced quantum confinement on the subthreshold swing behavior of line TFETs Ieee Transactions On Electron Devices. 60: 4057-4064. DOI: 10.1109/Ted.2013.2287259 |
0.476 |
|
| 2013 |
Walke AM, Vandooren A, Kaczer B, Verhulst AS, Rooyackers R, Simoen E, Heyns MM, Rao VR, Groeseneken G, Collaert N, Thean AVY. Part II: Investigation of subthreshold swing in line tunnel FETs using bias stress measurements Ieee Transactions On Electron Devices. 60: 4065-4072. DOI: 10.1109/Ted.2013.2287253 |
0.358 |
|
| 2013 |
Verreck D, Verhulst AS, Kao KH, Vandenberghe WG, De Meyer K, Groeseneken G. Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors Ieee Transactions On Electron Devices. 60: 2128-2134. DOI: 10.1109/Ted.2013.2260237 |
0.427 |
|
| 2013 |
Kao KH, Verhulst AS, Vandenberghe WG, De Meyer K. Counterdoped pocket thickness optimization of gate-on-source-only tunnel FETs Ieee Transactions On Electron Devices. 60: 6-12. DOI: 10.1109/Ted.2012.2227115 |
0.412 |
|
| 2013 |
Clima S, Kaczer B, Govoreanu B, Popovici M, Swerts J, Verhulst AS, Jurczak M, De Gendt S, Pourtois G. Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from Ab initio complex band calculations Ieee Electron Device Letters. 34: 402-404. DOI: 10.1109/Led.2013.2238885 |
0.33 |
|
| 2013 |
Rooyackers R, Vandooren A, Verhulst AS, Walke A, Devriendt K, Locorotondo S, Demand M, Bryce G, Loo R, Hikavyy A, Vandeweyer T, Huyghebaert C, Collaert N, Thean A. A new complementary hetero-junction vertical Tunnel-FET integration scheme Technical Digest - International Electron Devices Meeting, Iedm. 4.2.1-4.2.4. DOI: 10.1109/IEDM.2013.6724558 |
0.306 |
|
| 2013 |
Schulze A, Verhulst AS, Nazir A, Hantschel T, Eyben P, Vandervorst W. A comprehensive model for the electrical nanocontact on germanium for scanning spreading resistance microscopy applications Journal of Applied Physics. 113. DOI: 10.1063/1.4795141 |
0.387 |
|
| 2013 |
Schulze A, Florakis A, Hantschel T, Eyben P, Verhulst AS, Rooyackers R, Vandooren A, Vandervorst W. Diameter-dependent boron diffusion in silicon nanowire-based transistors Applied Physics Letters. 102. DOI: 10.1063/1.4790438 |
0.336 |
|
| 2013 |
Vandenberghe WG, Verhulst AS, Sorée B, Magnus W, Groeseneken G, Smets Q, Heyns M, Fischetti MV. Figure of merit for and identification of sub-60 mV/decade devices Applied Physics Letters. 102. DOI: 10.1063/1.4773521 |
0.406 |
|
| 2013 |
Schulze A, Hantschel T, Eyben P, Verhulst AS, Rooyackers R, Vandooren A, Vandervorst W. Quantitative three-dimensional carrier mapping in nanowire-based transistors using scanning spreading resistance microscopy Ultramicroscopy. 125: 18-23. DOI: 10.1016/J.Ultramic.2012.10.008 |
0.34 |
|
| 2013 |
Arstila K, Hantschel T, Schulze A, Vandooren A, Verhulst AS, Rooyackers R, Eyben P, Vandervorst W. Nanoprober-based EBIC measurements for nanowire transistor structures Microelectronic Engineering. 105: 99-102. DOI: 10.1016/J.Mee.2012.08.006 |
0.435 |
|
| 2012 |
Kao KH, Verhulst AS, Vandenberghe WG, Sorée B, Magnus W, Leonelli D, Groeseneken G, De Meyer K. Optimization of gate-on-source-only tunnel FETs with counter-doped pockets Ieee Transactions On Electron Devices. 59: 2070-2077. DOI: 10.1109/Ted.2012.2200489 |
0.488 |
|
| 2012 |
Kao KH, Verhulst AS, Vandenberghe WG, Soree B, Groeseneken G, De Meyer K. Direct and indirect band-to-band tunneling in germanium-based TFETs Ieee Transactions On Electron Devices. 59: 292-301. DOI: 10.1109/Ted.2011.2175228 |
0.43 |
|
| 2012 |
Vandenberghe WG, Verhulst AS, Kao KH, Meyer KD, Sorée B, Magnus W, Groeseneken G. A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors Applied Physics Letters. 100. DOI: 10.1063/1.4714544 |
0.442 |
|
| 2012 |
Kao KH, Verhulst AS, Vandenberghe WG, Sorée B, Groeseneken G, Meyer KD. Modeling the impact of junction angles in tunnel field-effect transistors Solid-State Electronics. 69: 31-37. DOI: 10.1016/J.Sse.2011.10.032 |
0.432 |
|
| 2011 |
Claeys C, Leonelli D, Rooyackers R, Vandooren A, Verhulst AS, Heyns MM, Groeseneken G, De Gendt S. Trends and challenges in Si and hetero-junction tunnel field effect transistors Ecs Transactions. 35: 15-26. DOI: 10.1149/1.3570772 |
0.333 |
|
| 2011 |
Leonelli D, Vandooren A, Rooyackers R, Verhulst AS, De Gendt S, Heyns MM, Groeseneken G. Silicide Engineering to Boost Si tunnel transistor drive current Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.04Dc05 |
0.488 |
|
| 2011 |
Leonelli D, Vandooren A, Rooyackers R, Verhulst AS, Huyghebaert C, De Gendt S, Heyns MM, Groeseneken G. Novel architecture to boost the vertical tunneling in tunnel field effect transistors Proceedings - Ieee International Soi Conference. DOI: 10.1109/SOI.2011.6081704 |
0.305 |
|
| 2011 |
Vandenberghe WG, Sorée B, Magnus W, Fischetti MV, Verhulst AS, Groeseneken G. Two-dimensional quantum mechanical modeling of band-to-band tunneling in indirect semiconductors Technical Digest - International Electron Devices Meeting, Iedm. 5.3.1-5.3.4. DOI: 10.1109/IEDM.2011.6131493 |
0.36 |
|
| 2011 |
Schulze A, Hantschel T, Eyben P, Verhulst AS, Rooyackers R, Vandooren A, Mody J, Nazir A, Leonelli D, Vandervorst W. Observation of diameter dependent carrier distribution in nanowire-based transistors Nanotechnology. 22. DOI: 10.1088/0957-4484/22/18/185701 |
0.453 |
|
| 2011 |
Zhuge J, Verhulst AS, Vandenberghe WG, Dehaene W, Huang R, Wang Y, Groeseneken G. Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications Semiconductor Science and Technology. 26. DOI: 10.1088/0268-1242/26/8/085001 |
0.415 |
|
| 2011 |
Verhulst AS, Leonelli D, Rooyackers R, Groeseneken G. Drain voltage dependent analytical model of tunnel field-effect transistors Journal of Applied Physics. 110. DOI: 10.1063/1.3609064 |
0.446 |
|
| 2010 |
Leonelli D, Vandooren A, Rooyackers R, Verhulst AS, Gendt SD, Heyns MM, Groeseneken G. Drive current improvement in Si tunnel field effect transistors by means of silicide engineering The Japan Society of Applied Physics. 693-694. DOI: 10.7567/Ssdm.2010.C-3-3 |
0.381 |
|
| 2010 |
Schulze A, Hantschel T, Eyben P, Vandooren A, Rooyackers R, Mody J, Verhulst AS, Vandervorst W. Quantitative two-dimensional carrier mapping in silicon nanowire-based tunnel-field effect transistors using scanning spreading resistance microscopy Materials Research Society Symposium Proceedings. 1258: 59-64. DOI: 10.1557/Proc-1258-P06-02 |
0.429 |
|
| 2010 |
Verhulst AS, Vandenberghe WG, Leonelli D, Rooyackers R, Vandooren A, Pourtois G, De Gendt S, Heyns MM, Groeseneken G. Boosting the on-current of Si-based tunnel field-effect transistors Ecs Transactions. 33: 363-372. DOI: 10.1149/1.3487567 |
0.359 |
|
| 2010 |
Leonelli D, Vandooren A, Rooyackers R, Verhulst AS, De Gendt S, Heyns MM, Groeseneken G. Performance enhancement in multi gate tunneling field effect transistors by scaling the fin-width Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.04Dc10 |
0.471 |
|
| 2010 |
Heyns M, Bellenger F, Brammertz G, Caymax M, Cantoro M, De Gendt S, De Jaeger B, Delabie A, Eneman G, Groeseneken G, Hellings G, Houssa M, Iacopi F, Leonelli D, Lin D, ... ... Verhulst A, et al. Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices Proceedings of Spie - the International Society For Optical Engineering. 7640. DOI: 10.1117/12.852587 |
0.374 |
|
| 2010 |
Verhulst AS, Sorée B, Leonelli D, Vandenberghe WG, Groeseneken G. Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor Journal of Applied Physics. 107. DOI: 10.1063/1.3277044 |
0.425 |
|
| 2009 |
Leonelli D, Vandooren A, Rooyackers R, Verhulst AS, Gendt SD, Heyns MM, Groeseneken G. Multiple-Gate Tunneling Field Effect Transistors with sub-60mV/dec Subthreshold Slope The Japan Society of Applied Physics. 767-768. DOI: 10.7567/Ssdm.2009.A-4-1 |
0.403 |
|
| 2009 |
Iacopi F, Rooyackers R, Loo R, Vanherle W, Milenin A, Arstila K, Verhulst A, Takeuchi S, Bender H, Caymax M, Hantschel T, Vandooren A, Vereecken PM, De Gendt S, Heyns M. Seedless templated growth of hetero-nanostructures for novel microelectronics devices Materials Research Society Symposium Proceedings. 1178: 37-42. DOI: 10.1557/Proc-1178-Aa04-04 |
0.432 |
|
| 2008 |
Verhulst AS, Vandenberghe WG, De Gendt S, Maex K, Groeseneken G. Boosting the on-current of silicon nanowire tunnel-FETs Ieee 2008 Silicon Nanoelectronics Workshop, Snw 2008. DOI: 10.1109/SNW.2008.5418419 |
0.351 |
|
| 2008 |
Vandenberghe WG, Verhulst AS, Groeseneken G, Sorée B, Magnus W. Analytical model for point and line tunneling in a tunnel field-effect transistor International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 137-140. DOI: 10.1109/SISPAD.2008.4648256 |
0.318 |
|
| 2008 |
Verhulst AS, Vandenberghe WG, Maex K, De Gendt S, Heyns MM, Groeseneken G. Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates Ieee Electron Device Letters. 29: 1398-1401. DOI: 10.1109/Led.2008.2007599 |
0.431 |
|
| 2008 |
Verhulst AS, Vandenberghe WG, Maex K, Groeseneken G. Boosting the on-current of a n -channel nanowire tunnel field-effect transistor by source material optimization Journal of Applied Physics. 104. DOI: 10.1063/1.2981088 |
0.426 |
|
| 2007 |
Verhulst AS, Vandenberghe WG, Maex K, Groeseneken G. Tunnel field-effect transistor without gate-drain overlap Applied Physics Letters. 91. DOI: 10.1063/1.2757593 |
0.454 |
|
| 2005 |
Verhulst AS, Rau IG, Yamamoto Y, Itoh KM. Optical pumping of Si29 nuclear spins in bulk silicon at high magnetic field and liquid helium temperature Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.235206 |
0.478 |
|
| 2003 |
Verhulst AS, Maryenko D, Yamamoto Y, Itoh KM. Double and single peaks in nuclear magnetic resonance spectra of natural and 29Si-enriched single-crystal silicon Physical Review B. 68: 54105. DOI: 10.1103/Physrevb.68.054105 |
0.444 |
|
| 2002 |
Verhulst AS, Liivak O, Sherwood MH, Chuang IL. A rapid and precise probe for measurement of liquid xenon polarization. Journal of Magnetic Resonance (San Diego, Calif. : 1997). 155: 145-9. PMID 11945044 DOI: 10.1006/Jmre.2002.2515 |
0.536 |
|
| 2001 |
Verhulst AS, Liivak O, Sherwood MH, Vieth HM, Chuang IL. Non-thermal nuclear magnetic resonance quantum computing using hyperpolarized xenon Applied Physics Letters. 79: 2480-2482. DOI: 10.1063/1.1409279 |
0.532 |
|
| 2000 |
Stephenson R, Verhulst A, De Wolf P, Caymax M, Vandervorst W. Nonmonotonic behavior of the scanning capacitance microscope for large dynamic range samples Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 405-408. DOI: 10.1116/1.591204 |
0.333 |
|
| 1998 |
Stephenson R, Verhulst A, De Wolf P, Caymax M, Vandervorst W. Contrast reversal in scanning capacitance microscopy imaging Applied Physics Letters. 73: 2597-2599. DOI: 10.1063/1.122517 |
0.354 |
|
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