Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
Abstract
:1. Introduction
2. Materials and Methods
3. Results
3.1. Graded AlGaN Channel HEMTs
3.2. Anisotropic Mobility in N-Polar GaN/AlGaN HEMT
3.3. Temperature Dependence of Electronic Properties
3.4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
Abbreviations
THz | Terahertz |
GHz | Gigahertz |
OHE | Optical Hall Effect |
HEMT | High-electron-mobility transistor |
2D | Two-dimensional |
3D | Three-dimensional |
2DEG | Two-dimensional electron gas |
3DEG | Three-dimensional electron gas |
RT | Room temperature |
GaN | Gallium nitride |
AlN | Aluminum nitride |
AlGaN | Aluminum gallium nitride |
AlINN | Aluminum indium nitride |
SiC | Silicon carbide |
Vis | Visible |
UV | Ultraviolet |
MOCVD | Metal-organic chemical vapor deposition |
XRD | X-ray diffraction |
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Channel Grading | Sheet Density, | Mobility, | Effective Mass, |
---|---|---|---|
Exponential | |||
Hybrid | |||
Linear |
Structure | Substrate | Temp., K | Mag. Field, T | Exp. Eff. Mass, | Ref. |
---|---|---|---|---|---|
1) N/AlN/GaN | RT | 0.55 | 0.27(±0.01) | [13] | |
2) N/GaN | 4H-SiC | RT | 0.55 | 0.32(±0.01) | [36] |
3) N/GaN | 4H-SiC | RT | 0.55 | 0.30(±0.01)–0.32(±0.01) | [18] |
4) N/AlN/GaN | RT | 0.55 | 0.24(±0.02) | [37] | |
5) N/GaN | 4H-SiC | 1.5–300 | 3 | 0.22(±0.01)–0.36(±0.03) | [28] |
6) * AlN/N | 4H-SiC | 5 | 8 | 0.63(±0.04) | [30] |
7) N/GaN | 4H-SiC | 7–400 | 8 | 0.25(±0.01)–0.58(±0.01) | This work |
8) AlN/GaN | 4H-SiC | 7–370 | 8 | 0.27(±0.01)–0.51(±0.03) | This work |
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Armakavicius, N.; Kühne, P.; Papamichail, A.; Zhang, H.; Knight, S.; Persson, A.; Stanishev, V.; Chen, J.-T.; Paskov, P.; Schubert, M.; et al. Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect. Materials 2024, 17, 3343. https://doi.org/10.3390/ma17133343
Armakavicius N, Kühne P, Papamichail A, Zhang H, Knight S, Persson A, Stanishev V, Chen J-T, Paskov P, Schubert M, et al. Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect. Materials. 2024; 17(13):3343. https://doi.org/10.3390/ma17133343
Chicago/Turabian StyleArmakavicius, Nerijus, Philipp Kühne, Alexis Papamichail, Hengfang Zhang, Sean Knight, Axel Persson, Vallery Stanishev, Jr-Tai Chen, Plamen Paskov, Mathias Schubert, and et al. 2024. "Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect" Materials 17, no. 13: 3343. https://doi.org/10.3390/ma17133343