Search Results (26)

A compact pH measuring electrochemical sensor module was developed for Smart Multi-Well Plates (SMWP) applicable for highly parallelized cell culture analysis using incorporated Organ-on-Chip devices. A specific electronic architecture was designed and manufactured containing an extended gate field effect transistor as the transducer device. Electrochemical electrodes were functionalized using pH sensitive metal-oxides and applied as the gate material. The composition and the related pH sensitivity of differently deposited materials were characterized and the suitability of ALD-deposited, non-stoichiometric titanium oxide (TiO_x) for sensitive pH measurement was verified showing excellent responses close to the ideal Nernstian slope (59 mV/pH). Full article

The use of laser cutter machines to produce porous graphene films is an innovative method for a low-cost production of flexible electrodes for electronics and sensing applications. Here, laser-induced graphene (LIG) is used to produce the gate electrodes of EGFET sensors. LIG electrodes and LIG electrodes functionalized with ZnO and metalloporphyrin-coated ZnO are used as elements of the electronic tongue. The array is tested in a classical experiment aimed at identifying complex food matrices, such as fruit juices. The results demonstrate the feasibility of the approach and provide a solid basis for further array developments. Full article

Hydrogen sulphide (H₂S) is a toxic gas soluble in water, H₂S_aq, as a weak acid. Since H₂S_aq usually originates from the decomposition of faecal matter, its presence also indicates sewage dumping and possible parallel waterborne pathogens associated with sewage. We here present a low footprint (‘frugal’) H₂S_aq sensor as an accessible resource for water quality monitoring. As a sensing mechanism, we find the chemical affinity of thiols to gold (Au) translates to H₂S_aq. When an Au electrode is used as a control gate (CG) or floating gate (FG) electrode in the electric double layer (EDL) pool of an extended gate field effect transistor (EGFET) sensor, EGFET transfer characteristics shift along the CG voltage axis in response to H₂S_aq. We rationalise this by the interface potential from the adsorption of polar H₂S molecules to the electrode. The sign of the shift changes between Au CG and Au FG, and cancels when both electrodes are Au. The sensor is selective for H₂S_aq over the components of urine, nor does urine suppress the sensor’s ability to detect H₂S_aq. Electrodes can be recovered for repeated use by washing in 1M HCl. Quantitatively, CG voltage shift is fitted by a Langmuir-Freundlich (LF) model, supporting dipole adsorption over an ionic (Nernstian) response mechanism. We find a limit-of-detection of 14.9 nM, 100 times below potability. Full article

In this project we investigated the extended-gate field-effect transistor (EGFET) structure used with ITO (Indium Tin Oxide)/PET (Polyethylene Terephthalate) sensitive films acting as the extended-gate part of an EGFET obtained from a combination of FETs from the CD4007 chip. We tested the device as a pH sensor by immersing the ITO/PET electrode in several chemical solutions of acidic and basic nature, including hydrogen peroxide, acetic acid, sulfuric acid, and ammonium hydroxide, at different concentrations. Using a Tektronix 4200A sourcemeter, we plotted the current–voltage (I–V) characteristics for the different chemical solutions, and we established a correlation to the pH changes. Results from the plotted I–V characteristics show a great dependance of the drain current (I_D) on solution concentration. Furthermore, we measured the pH of each of the used solutions, and we established a relationship between the drain current and the pH value. Our results show a consistent decrease in the current with an increase in the pH value, although with different rates depending on the solution. The device showed high voltage sensitivity at 0.23 V per pH unit when tested in sulfuric acid. Full article

Recently, certain challenges have persisted in PH sensor applications, especially when employing hafnium oxide (HfO₂) thin films as sensing layers, where issues related to sensitivity, hysteresis, and long-term stability hamper performance. Microwave annealing (MWA) technology, as a promising solution for addressing these challenges, has gained significant attraction due to its unique advantages. In this article, the effects of microwave annealing (MWA) treatment on the sensing behaviors of Extended-Gate Field-Effect Transistors (EGFETs) utilizing HfO₂ as a sensing film have been investigated for the first time. Various power levels of MWA treatment (1750 W/2100 W/2450 W) were selected to explore the optimal processing conditions. A thorough physical analysis was conducted to characterize the surface of the MWA-treated HfO₂ sensing thin film using techniques such as X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Our findings reveal that MWA treatment effectively increased the surface sites (Ns) in the HfO₂ sensing thin film, consequently leading to an increase in the pH sensitivity of EGFETs to 59.6 mV/pH, as well as a reduction in hysteresis and an enhancement in long-term stability. These results suggest that MWA offers a straightforward, energy-efficient method to enhance overall HfO₂ sensing film performance in EGFETs, offering insights for HfO₂ applications and broader microelectronics challenges. Full article

We further simplify the most ‘user-friendly’ potentiometric sensor for waterborne analytes, the ‘extended-gate field effect transistor’ (EGFET). This is accomplished using a ‘bridge’ design, that links two separate water pools, a ‘control gate’ (CG) pool and a ‘floating gate’ (FG) pool, by a bridge filled with agar-agar hydrogel. We show electric communication between electrodes in the pools across the gel bridge to the gate of an LND150 FET. When loading the gel bridge with a sorbent that is known to act as a sensitiser for Cu²⁺ water pollution, namely, the ion exchanging zeolite ‘clinoptilolite’, the bridged EGFET acts as a potentiometric sensor to waterborne Cu²⁺. We then introduce novel sensitisers into the gel bridge, the commercially available resins Puromet^TM MTS9140 and MTS9200, which are sorbents for the extraction of mercury (Hg²⁺) pollution from water. We find a response of the bridged EGFET to Hg²⁺ water pollution, setting a template for the rapid screening of ion exchange resins that are readily available for a wide range of harmful (or precious) metal ions. We fit the potentiometric sensor response vs. pollutant concentration characteristics to the Langmuir–Freundlich (LF) model which is discussed in context with other ion-sensor characteristics. Full article

Devices that integrate field effect transistors into microfluidic channels are becoming increasingly promising in the medical, environmental, and food realms, among other applications. The uniqueness of this type of sensor lies in its ability to reduce the background signals existing in the measurements, which interfere in obtaining good limits of detection for the target analyte. This and other advantages intensify the development of selective new sensors and biosensors with coupling configuration. This review work focused on the main advances in the fabrication and application of field effect transistors integrated into microfluidic devices as a way of identifying the potentialities that exist in these systems when used in chemical and biochemical analyses. The emergence of research on integrated sensors is not a recent study, although more recently the progress of these devices is more accentuated. Among the studies that used integrated sensors with electrical and microfluidic parts, those that investigated protein binding interactions seem to be the ones that expanded the most due, among other things, to the possibility of obtaining several physicochemical parameters involved in protein–protein interactions. Studies in this area have a great possibility of advancing innovations in sensors with electrical and microfluidic interfaces in new designs and applications. Full article

Herein, we investigated the applicability of thick film and bulk disk forms of aluminum-doped zinc oxide (AZO) for low-dose X-ray radiation dosimetry using the extended gate field effect transistor (EGFET) configuration. The samples were fabricated using the chemical bath deposition (CBD) technique. A thick film of AZO was deposited on a glass substrate, while the bulk disk form was prepared by pressing the collected powders. The prepared samples were characterized via X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM) to determine the crystallinity and surface morphology. The analyses show that the samples are crystalline and comprise nanosheets of varying sizes. The EGFET devices were exposed to different X-ray radiation doses, then characterized by measuring the I–V characteristics pre- and post-irradiation. The measurements revealed an increase in the values of drain–source currents with radiation doses. To study the detection efficiency of the device, various bias voltages were also tested for the linear and saturation regimes. Performance parameters of the devices, such as sensitivity to X-radiation exposure and different gate bias voltage, were found to depend highly on the device geometry. The bulk disk type appears to be more radiation-sensitive than the AZO thick film. Furthermore, boosting the bias voltage increased the sensitivity of both devices. Full article

Radiation measurements are critical in radioanalytical, nuclear chemistry, and biomedical physics. Continuous advancement in developing economical, sensitive, and compact devices designed to detect and measure radiation has increased its capability in many applications. In this work, we presented and investigated the performance of a cost-effective X-ray radiation detector based on the extended gate field effect transistors (EGFET). We examined the sensitivity of Al-doped Zinc oxide (AZO) of varying thicknesses, fabricated by chemical bath deposition (CBD), following X-ray irradiation with low and high doses. EGFETs were used to connect samples for their detection capabilities. As a function of the absorbed dose, the response was analyzed based on the threshold voltage shift, and the sensitivity of each device was also evaluated. We demonstrated that thin films are less sensitive to radiation than their disk-type EG devices. However, performance aspects of the devices, such as radiation exposure sensitivity and active dosage region, were found to be significantly reliant on the composition and thickness of the materials used. These structures may be a cost-effective alternative for real-time, room-temperature radiation detectors. Full article

A highly selective and sensitive EGFET-pH sensor based on composite TiO₂–PANI had been developed in this work. A sol-gel titanium dioxide (TiO₂) and the composite of TiO₂ with semiconducting polyaniline (PANI) were deposited using a simple spin-coating method on an indium tin oxide (ITO) substrate. The films have been explored as a sensing electrode (SE) of extended gate field-effect transistor (EGFET) for pH applications in the range of pH 2 to 12. The pH sensitivities between TiO₂, TiO₂–PANI bilayer composite, and TiO₂–PANI composite thin films were discussed. Among these, the TiO₂–PANI composite thin film showed a super-Nernstian behavior with high sensitivity of 66.1 mV/pH and linearity of 0.9931; good repeatability with a standard deviation of 0.49%; a low hysteresis value of 3 mV; and drift rates of 4.96, 5.54, and 3.32 mV/h in pH 4, 7, and 10, respectively, for 6 h. Upon applying the TiO₂–PANI composite as the SE for nitrate measurement, low sensitivity of 12.9 mV/dec was obtained, indicating that this film is a highly selective sensing electrode as a pH sensor. The surface morphology and crystallinity of the thin films were also discussed. Full article

In this research, a microfluid-based extended gate field-effect transistor (EGFET) biosensor with an on-chip sensing window (OCSW) was fabricated. The detection window was composed of six metal layers, and a ruthenium dioxide (RuO₂) film was spattered on the surface and functionalized with lactase to detect lactic acid (LA). To detect LA in a more diversified way, a microfluidic system was integrated with the biosensor. Moreover, a special package was used to seal the sensing window and microfluidic tube and insulate it from other parts to prevent water molecule invasion and chip damage. The sensitivity analysis of the EGFET biosensor was studied by a semiconductor parameter analyzer (SPA). The static and dynamic measurements of the EGFET with sensing windows on a chip were analyzed. The sensing characteristics of the EGFET biosensor were verified by the experimental results. The proposed biosensor is suitable for wearable applications due to the advantages of its low weight, low voltage, and simple manufacturing process. Full article

A new design of the MOSFET dosimeter is being developed in a different study to measure the dose delivered to the tissue layers. Development of zinc oxide-Lead (ZnO-Pb) of different thicknesses fabricated by chemical bath deposition were investigated to study their sensitivity following irradiation using a low absorbed dose that can be used in diagnostic and interventional radiology (9, 36.5, and 70 mGy) and high absorbed dose (1, 5, and 10 Gy) of X-ray. The morphology and structure of the as-prepared films were analysed using FESEM and XRD measurements. The device relies on sensing the changes in the local electric field arising from radiation interactions in the absorber, coupled with the semiconductor materials used in this work—ZnO-Pb as the EGFET. Then the sensitivity of all devices was examined. Generally, thin-film devices showed less sensitivity to X-ray than the disk type. The sensitivity of the thin film dropped from 6.66 mV/to 1.42 mV/Gy, while the sensitivity of the ZnO-Pb disk type was 23.3 mV/Gy, which then dropped to 6.30 6.42 mV/Gy. Furthermore, the disk type ZnO-Pb was exposed to a high absorbed dose and obtained a sensitivity value of 0.08 mV/Gy, while the ZnO-Pb thin film obtained 0.01 mV/Gy. This can be related to the influence of thickness on the sensitivity of the dosimeter. However, the device’s performance characteristics, like sensitivity to radiation exposure and operating dose area, were discovered to be strongly dependent on the materials employed, effective atomic number, and thickness of the materials. Based on the results shown above, these devices might be considered a low-cost candidate for real-time -radiation dosimetry at room temperature. Furthermore, the thickest sample of 1 mm showed better sensitivity to radiation, compared to the thinner samples. Full article

Low-abundance biomolecule detection is very crucial in many biological and medical applications. In this paper, we present a novel electrolyte-gated graphene field-effect transistor (EGFET) biosensor consisting of acoustic tweezers to increase the sensitivity. The acoustic tweezers are based on a high-frequency bulk acoustic resonator with thousands of MHz, which has excellent ability to concentrate nanoparticles. The operating principle of the acoustic tweezers to concentrate biomolecules is analyzed and verified by experiments. After the actuation of acoustic tweezers for 10 min, the IgG molecules are accumulated onto the graphene. The sensitivities of the EGFET biosensor with accumulation and without accumulation are compared. As a result, the sensitivity of the graphene-based biosensor is remarkably increased using SMR as the biomolecule concentrator. Since the device has advantages such as miniaturized size, low reagent consumption, high sensitivity, and rapid detection, we expect it to be readily applied to many biological and medical applications. Full article

In this study, the In_0.9Ga_0.1O sensing membrane were deposited by using the RF magnetron sputtering at room temperature and combined with commercial MOSFETs as the extended gate field effect transistor (EGFET) pH sensors. The sensing performance of the In_0.9Ga_0.1O EGFET pH sensors were measured and analyzed in the pH value of range between 2 to 12. In the saturation region, the pH current sensitivity calculated from the linear relationship between the $I_{DS}$ and pH value was approximately 56.64 μA/pH corresponding to the linearity of 97.8%. In the linear region, the pH voltage sensitivity exhibited high sensitivity and linearity of 43.7 mV/pH and 96.3%, respectively. The In_0.9Ga_0.1O EGFET pH sensors were successfully fabricated and exhibited great linearity. The analyzed results indicated that the In_0.9Ga_0.1O was a robust material as a promising sensing membrane and effectively used for pH sensing detection application. Full article

The nanostructuring of a sensing membrane is performed through colloidal nanosphere lithography (NSL) techniques with a tiny polystyrene nanobead template 100 nm in size. The solvent ratio adjustment has been proven to be effective in assisting the monolayer deposition of small templating particles with minimal defects. Two distinct structures, namely, a billowy gold nanostructure (BGN) where the nanobead template is left unetched and a gold nanoframe array (GNA) with a regular ring-like structure after template removal, are used for the extended-gate field-effect transistor (EGFET) electrodes. The GNA structure generates an electroactive surface area significantly (~20%) larger than its geometrical area as well as a greater surface roughness than the BGN. When integrated with the portable constant voltage–constant current (CVCC) FET circuitry for pH screening to determine the optimized measurement conditions for H₂O₂ sensing, the GNA sensing membrane also shows more improved Nernstian sensitivity at ~50 mV/pH than the BGN electrode. The more optimized sensitivity is then proven using the GNA in the detection of H₂O₂, the most common representative reactive oxygen species (ROS) involved in the environment, food, and neurodegenerative diseases, such as Parkinson´s and Alzheimer´s diseases. The GNA electrode has a sensitivity of 70.42 mV/log µM [H₂O₂] and a limit of detection (LoD) of 1.183 µM H₂O₂. The integrated ion sensing system employing unique, highly ordered gold array gate electrodes and a portable CVCC circuit system has shown a stable real-time output voltage signal, representing an alternative to bulky conventional FET devices for potential on-site H₂O₂ detection. Full article