Jang, D.; Kwon, M.-W. Self-Rectifying Resistive Switching Memory Based on Molybdenum Disulfide for Reduction of Leakage Current in Synapse Arrays. Electronics2023, 12, 4650.
Jang, D.; Kwon, M.-W. Self-Rectifying Resistive Switching Memory Based on Molybdenum Disulfide for Reduction of Leakage Current in Synapse Arrays. Electronics 2023, 12, 4650.
Jang, D.; Kwon, M.-W. Self-Rectifying Resistive Switching Memory Based on Molybdenum Disulfide for Reduction of Leakage Current in Synapse Arrays. Electronics2023, 12, 4650.
Jang, D.; Kwon, M.-W. Self-Rectifying Resistive Switching Memory Based on Molybdenum Disulfide for Reduction of Leakage Current in Synapse Arrays. Electronics 2023, 12, 4650.
Abstract
Resistive random-access memory has emerged as a promising non-volatile memory technology, garnering substantial attention due to its potential for high operational performance, low power consumption, and scalability. Two-dimensional nanostructured materials play a pivotal role in RRAM devices, offering enhanced electrical properties and physical attributes that contribute to overall device improvement. In this study, self-rectifying switching behavior in RRAM devices is proposed based on molybdenum disulfide nanocomposites decorated with palladium on SiO2/Si substrates. The integration of Pd and MoS2 at the nanoscale effectively mitigates leakage currents decreasing from cross-talk in the RRAM array, eliminating the need for a separate selector device. The successful demonstration of the expected RRAM switching behavior follows the application of a Pd nanoparticle coating. The fabricated Pd-MoS2 synaptic device showed a high current ratio for forward/reverse current higher than 60 at a low resistance state and observed a memory on/off ratio of 103 performing stable resistance switching behavior.
Keywords
Resistive random-access memory; Molybdenum disulfide; Palladium; Self-rectifying; current ratio
Subject
Engineering, Electrical and Electronic Engineering
Copyright:
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