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    PRV: 100 Volts Io: 150 Ma: High Speed Switching Diode DO - 35

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    abab74
    This document provides specifications for a 1N4149 silicon high speed switching diode. The diode has a maximum forward voltage of 1V, maximum reverse current of 5uA, and is rated for a peak reverse voltage of 100V and average forward current of 150mA. It comes in a DO-35 glass case and is intended for use in applications requiring low forward voltage, low reverse current, high reliability, and high speed switching.

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    Download as PDF, TXT or read online from Scribd

    PRV: 100 Volts Io: 150 Ma: High Speed Switching Diode DO - 35

    Uploaded by

    abab74
    10 views2 pages
    This document provides specifications for a 1N4149 silicon high speed switching diode. The diode has a maximum forward voltage of 1V, maximum reverse current of 5uA, and is rated for a peak reverse voltage of 100V and average forward current of 150mA. It comes in a DO-35 glass case and is intended for use in applications requiring low forward voltage, low reverse current, high reliability, and high speed switching.

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    1N4149

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    This document provides specifications for a 1N4149 silicon high speed switching diode. The diode has a maximum forward voltage of 1V, maximum reverse current of 5uA, and is rated for a peak reverse voltage of 100V and average forward current of 150mA. It comes in a DO-35 glass case and is intended for use in applications requiring low forward voltage, low reverse current, high reliability, and high speed switching.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    10 views2 pages

    PRV: 100 Volts Io: 150 Ma: High Speed Switching Diode DO - 35

    Uploaded by

    abab74
    This document provides specifications for a 1N4149 silicon high speed switching diode. The diode has a maximum forward voltage of 1V, maximum reverse current of 5uA, and is rated for a peak reverse voltage of 100V and average forward current of 150mA. It comes in a DO-35 glass case and is intended for use in applications requiring low forward voltage, low reverse current, high reliability, and high speed switching.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    1N4149

    PRV : 100 Volts Io : 150 mA


    FEATURES :
    * * * * * * Silicon Epitaxial Planar Diode High reliability Low reverse current Low forward voltage drop High speed switching Pb / RoHS Free

    HIGH SPEED SWITCHING DIODE DO - 35

    0.079(2.0 )max.

    1.00 (25.4) min.

    0.150 (3.8) max.

    0.020 (0.52)max.

    1.00 (25.4) min.

    MECHANICAL DATA :
    * Case : DO-35 Glass Case * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.13 gram (approximately)

    Dimensions in inches and ( millimeters )

    Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

    MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

    RATING
    Maximum Repetitive Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Surge Forward Current at t < 1s and Tj = 25C Maximum Power Dissipation , Ta = 25 C Maximum Forward Voltage at IF = 10 mA Maximum Reverse Current Maximum Reverse Recovery Time from IF = 10mA to IR = 1mA , VR = 6V , RL = 100 Junction Temperature Range Storage Temperature Range at VR = 75V

    SYMBOL
    VRRM VR IF(AV) IFSM PD VF IR Trr TJ TSTG

    VALUE
    100 75 150
    1)

    UNIT
    V V mA mA mW V nA ns C C

    500 500 1.0 5 4 175 - 65 to + 175

    Note : 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)

    Page 1 of 2

    Rev. 02 : March 25, 2005

    RATING AND CHARACTERISTIC CURVES ( 1N4149 )

    FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, mA POWER DISSIPATION , mW
    250 500

    FIG.2 - POWER DARATING CURVE

    200

    400

    150

    300

    100

    200

    50

    100

    25

    50

    75

    100

    125

    150

    175

    25

    50

    75

    75

    100

    125

    150

    175

    AMBIENT TEMPERATURE, ( C)

    AMBIENT TEMPERATURE, ( C)

    FIG.3 - TYPICAL FORWARD CHARACTERISTICS


    10

    FIG.4 - TYPICAL REVERSE CHARACTERISTICS

    100

    FORWARD CURRENT, mA

    REVERSE CURRENT, MICROAMPERES

    Ta = 100 C

    1.0

    10

    Ta = 25 C

    0.1

    Ta = 25 C

    1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

    0.01 0 20 40 60 80 100 120 140

    FORWARD VOLTAGE, VOLTS

    PERCENT OF RATED REVERSE VOLTAGE, (%)

    Page 2 of 2

    Rev. 02 : March 25, 2005

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