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    2Sd313 NPN Epitaxial Silicon Transistor: Low Frequency Power Amplifier

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    cbkulatunge
    This document provides specifications for an NPN epitaxial silicon transistor intended for use in low frequency power amplifier applications. It lists the transistor's part number, intended complement component, packaging, and absolute maximum ratings for voltage, current, power, and temperature. Electrical characteristics given include cutoff currents, current gain, saturation voltage, and current gain bandwidth product, along with the test conditions for each parameter. Contact information is provided for the manufacturer.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    2Sd313 NPN Epitaxial Silicon Transistor: Low Frequency Power Amplifier

    Uploaded by

    cbkulatunge
    41 views2 pages
    This document provides specifications for an NPN epitaxial silicon transistor intended for use in low frequency power amplifier applications. It lists the transistor's part number, intended complement component, packaging, and absolute maximum ratings for voltage, current, power, and temperature. Electrical characteristics given include cutoff currents, current gain, saturation voltage, and current gain bandwidth product, along with the test conditions for each parameter. Contact information is provided for the manufacturer.

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    2SD313 Transistor Datasheet

    Original Title

    2SD313

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    This document provides specifications for an NPN epitaxial silicon transistor intended for use in low frequency power amplifier applications. It lists the transistor's part number, intended complement component, packaging, and absolute maximum ratings for voltage, current, power, and temperature. Electrical characteristics given include cutoff currents, current gain, saturation voltage, and current gain bandwidth product, along with the test conditions for each parameter. Contact information is provided for the manufacturer.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    41 views2 pages

    2Sd313 NPN Epitaxial Silicon Transistor: Low Frequency Power Amplifier

    Uploaded by

    cbkulatunge
    This document provides specifications for an NPN epitaxial silicon transistor intended for use in low frequency power amplifier applications. It lists the transistor's part number, intended complement component, packaging, and absolute maximum ratings for voltage, current, power, and temperature. Electrical characteristics given include cutoff currents, current gain, saturation voltage, and current gain bandwidth product, along with the test conditions for each parameter. Contact information is provided for the manufacturer.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2SD313

    NPN EPITAXIAL SILICON TRANSISTOR

    LOW FREQUENCY POWER AMPLIFIER

    Complement to 2SB507

    TO-220

    ABSOLUTE MAXIMUM RATINGS (TA=25oC)

    Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC) Junction Temperature Storage Temperature

    Symbol VCBO VCEO VEBO IC PC Tj Tstg

    Rating 60 60 7 3 30 150 -50~150

    Unit V V V A W C
    C

    ELECTRICAL CHARACTERISTICS (TA=25oC)


    Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO IEBO hFE1 VCE(sat) fT Test Condition VCB= 60V , IE=0 VEB= 7V , IC=0 VCE= 2V , IC=1A IC=2A , IB=0.2A VCE= 5V , IC=0.5A Min Typ Max 100 100 320 1.0 8 Unit
    A A

    40

    V MHZ

    Wing Shing Computer Components Co., (H.K)Ltd. Homepage: http:/ /www.wingshing.com

    TeL(852)2341 9276 Fax:(852)2797 8153 . e_ mail:wsccltd@hkstar.com

    This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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