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Analog Electronics Equation Sheet: Last Name

This document contains equations and constants relevant to analog electronics design. It includes equations for MOSFETs, BJTs, op amps, feedback systems, and other analog circuits. Key parameters defined include threshold voltages, transconductance, output resistance, and capacitances for MOSFETs operating in different regions. Equations are also provided for basic op amp characteristics like gain, bandwidth, and slew rate. Constants like electron charge and Boltzmann's constant are defined for temperature calculations.

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Radoslaw
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© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
194 views

Analog Electronics Equation Sheet: Last Name

This document contains equations and constants relevant to analog electronics design. It includes equations for MOSFETs, BJTs, op amps, feedback systems, and other analog circuits. Key parameters defined include threshold voltages, transconductance, output resistance, and capacitances for MOSFETs operating in different regions. Equations are also provided for basic op amp characteristics like gain, bandwidth, and slew rate. Constants like electron charge and Boltzmann's constant are defined for temperature calculations.

Uploaded by

Radoslaw
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Last Name:

Analog Electronics
23

Equation Sheet

19

Constants: k = 1.38 10
JK ; q = 1.602 10
C ; V T = kT q 26mV at 300 K ;
12
F/m ; k ox = 3.9 ; C ox = ( k ox 0 ) t ox
0 = 8.854 10
NMOS: k n = n C ox ( W L ) ; V tn > 0 ; v DS 0 ; v ov = v GS V tn
2
(triode) v DS v ov (or v D < v G V tn ) ; i D = k n ( ( v ov )v DS ( v DS 2 ) )
(active) v DS v ov ;

; g m = k n V ov = 2I D V ov =

i D = 0.5k n v ov ( 1 + v DS )

2k n I D ; r s = 1 g m ; r o = L ( I D )

PMOS: k p = p C ox ( W L ) ; V tp < 0 ; v SD 0 ; v ov = v SG V tp
2
(triode) v SD v ov (or ( v D > v G + V tp )) ; i D = k p ( ( v ov )v SD ( v SD 2 ) )
2

; g m = k p V ov = 2I D V ov =

(active) v DS v ov ; i D = 0.5k p v ov ( 1 + v SD )
( v BE VT )

2k p I D ; r s = 1 g m ; r o = L ( I D )

( 1 + ( v CE V A ) ) ; g m = r e = I C V T ; r e = V T I E ; r = g m ; r o = V A I C
(active) i C = I S e
=
( + 1 )i B ; = ( + 1 ) ; i C = i E ; R b = ( + 1 ) ( r e + R E ) ; R e = ( R B + r ) ( + 1 )
i
;
i C = i B E
vo
R x 1 gm + R D ( gm ro )
R x ( 1 + g m R S )r o
v
Cascode: i
v o v i g m ( r o || R D )
v
1
R D v oc v i
RD
i sc ( 1 g m + R S ) v i i
RS
vi
( Approx due to g m r o 1 )
Diff Pair: A d = g m R D ; A CM = ( R D ( 2R SS ) ) ( ( R D ) R D ) ; A CM = ( R D ( 2R SS ) ) ( ( g m ) g m )
BJT:

V os = V t ; V os = ( V ov 2 ) ( ( R D ) R D ) ; V os = ( V ov 2 ) ( ( ( W L ) ) ( W L ) )
AM
t
step response y(t) = Y ( Y Y 0+ )e
unity gain freq for T ( s ) = --------------------------1st order:
1 + s 3dB
( 1 + s z 1 ) ( 1 + s z 2 ) ( 1 + s z m )
for real axis poles/zeros T ( s ) = k dc ---------------------------------------------------------------------------------------Freq:
( 1 + s 1 ) ( 1 + s 2 ) ( 1 + s n )
OTC estimate f H = 1 ( 2 i ) ;
dominant pole estimate f H = 1 ( 2 max )
Miller:

Z1 = Z ( 1 K ) ;

f t A M 3dB when A M 1

Z2 = Z ( 1 1 K )

Mos caps: C gs = ( 2 3 )WLC ox + WL ov C ox ; C gd = WL ov C ox ; C db = C db0 ( 1 + V db V 0 )


2
f t = g m ( 2 ( C gs + C gd ) ) assuming C gd C gs f t = ( 3V ov ) ( 4L )
Feedback: A = A ( 1 + A ) ; x = ( 1 ( 1 + A ) )x ; dA A = ( 1 ( 1 + A ) )dA A ; Hf = H ( 1 + A ) ; Lf = L ( 1 + A )
i

Loop Gain L s r s t ; A f = A ( L ( 1 + L ) ) + d ( 1 + L ) ; Z port = Z 0 ( ( 1 + L S ) ( 1 + L O ) )


P
PM = L(j 1) + 180 ; GM = L(j 180) dB
Pole Splitting p1 1 ( g m R 2 C f R 1 ) ; p2 ( g m C f ) ( C 1 C 2 + C f ( C 1 + C 2 ) )
2
2
s + ( o Q )s + o = 0 ; Q 0.5 real poles ; Q > 1 2 freq resp peaking
2
2

Power Amps: Class A: = ( 1 4 ) ( V o ( IR L ) ) ( V o V CC ) Class B: = ( 4 ) ( V o V CC ) ; P DN_max = V CC ( R L )


2
Class AB: i n i p = I Q
2-stage cmos opamp: p1 ( 1 ( R 1 G m2 R 2 C c ) ); p2 ( G m2 C 2 ) ; z ( 1 ( C c ( ( 1 G m2 ) R ) ) )

SR = I C c = t V ov1 ; will not SR limit if t V o < SR

Pole Pair:

MOS Transistor; CMOS basic parameters. Channel length = 0.18m

Vt
(V)

C ox

( A V ) ( m/V )
2

( fF m )

t ox
( nm )

L ov
( m )

C db0
---------W
fF-
------ m

C ox
2

NMOS

0.4

240

0.05

8.5

0.04

0.3

PMOS

-0.4

60

-0.05

8.5

0.04

0.3

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