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Assignment 4

This document contains 9 questions regarding MOSFET devices and electronics. The questions cover topics such as calculating channel resistance for an NMOS transistor operated at different gate-source voltages, determining the region of operation for transistors in different circuits, and designing bias networks to operate transistors in saturation. Specific questions ask about how channel resistance, transconductance, and voltages at various nodes change with device parameters and operating conditions. The document provides necessary device parameters and circuit configurations to solve each question.

Uploaded by

Shaheer Shahzad
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© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
154 views

Assignment 4

This document contains 9 questions regarding MOSFET devices and electronics. The questions cover topics such as calculating channel resistance for an NMOS transistor operated at different gate-source voltages, determining the region of operation for transistors in different circuits, and designing bias networks to operate transistors in saturation. Specific questions ask about how channel resistance, transconductance, and voltages at various nodes change with device parameters and operating conditions. The document provides necessary device parameters and circuit configurations to solve each question.

Uploaded by

Shaheer Shahzad
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Devices and Electronics

Assignment 4
Mosfets
Q1.
An NMOS transistor, fabricated with W = 100 m and L = 5 m in a technology for
which kn' = 50 A/V2 and Vt = 1V, is to be operated at very low values of vDS as
linear resistor. Calculate the value of channel resistance for two values of Vgs 1.1
V and 11 V? You range of resistance would then be the difference between the
two values that you have calculated.
How does this range change if
i.
ii.

the device width is halved?


the device length is halved?

Now Vgs is reduced to 0 V. What would be the channel resistance?


Q2.
Qs 5.57 from Sedra Smith 6th edition

Q3.
Determine qualitatively how the trans-conductance of a MOSFET(operating in
saturation) changes if
a)
b)
c)
d)

W/L is doubled but Id remains constant.


Vgs-Vth is doubled but Id remains constant.
Id is doubled but W/L remains constant.
Id is doubled but Vgs-Vth remains constant.

Q4.
All the transistors in the circuits shown have the same values of Vt, k, W/L and
lambda. Moreover, Lambda is negligibly small. All operate in saturation at Id=I
and |Vgs|=|Vds|= 1V. Find the voltages at V1, V2, V3 and V4. If |Vt|=0.5 V and
I=0.1mA, how large a resistor can be inserted in series with each drain connection
while maintaining saturation? Attempt this question this for the 3 circuits shown
below.

Q5.
Determine the region of operation of the transistors in each of the circuits shown
below. Assume VTH = 0.4 V for NMOSdevices.

Q6:
For the Circuit shown below, calculate Vo. Vt=2V and k=1mA/(V^2). In order to
solve this, you have to determine yourself if M1 and M2 are in saturation or linear
region. Start by assuming something.

Qs 7:
A P channel Transistor for which |Vt| is 1v, |Va| is 50v, operates in saturation region with
|Vgs| is 3v, Vds| is 4v and Id is 3mA. Find the signed values of the following

Vgs
Vsg
Vds
Vsd
Va

K(W/L)
Vt

Q8:
For the circuit below, let RG = 10 Mohms and RD = 1O Kohmsand VDD = 10 V. For each of the
following two transistors, findthe voltages VD and VG:
(a) Vt=1 Vand k'nW/L = 0.5 mA/V2
(b) Vt= 2 V and knW/L= 1.25 mA/V2

Qs 9:
For the Circuit below, using a 6-V supply with an NMOS transistor for which V, = 1.2 V, k'nW/L =
3.2 mA/V2 and = 0, provide a design which biases the transistor at ID = 2 mA, with VDS large
enough to allow saturation operation for a 2-V negative signal swing at the drain. Use 22 M
ohm as the largest resistor in the feedback-bias network. What values of RD, RG1and RG2 have
you chosen?

Vdd

RD

10k

10k

RG1
Q1
NMOSFET

RG2

10k

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