29F400 PDF

PRELIMINARY
Am29F400AT/Am29F400AB
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only,
Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
5.0 V 10% for read and write operations
Minimizes system level power requirements
Compatible with JEDEC-standards
Pinout and software compatible with
single-power-supply flash
Superior inadvertent write protection
Minimum 100,000 write/erase cycles guaranteed

High performance
60 ns maximum access time
Sector erase architecture
One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and
seven 64 Kbytes
Any combination of sectors can be erased. Also
supports full chip erase.
Sector protection
Hardware method that disables any combination
of sectors from write or erase operations.
Implemented using standard PROM
programming equipment.
Embedded Erase Algorithms
Automatically preprograms and erases the chip
or any sector
Automatically programs and verifies data at

specified address
Data Polling and Toggle Bit feature for detection
of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or
erase cycle completion
Erase Suspend/Resume
Supports reading data from a sector not being
erased
Low power consumption
20 mA typical active read current for Byte Mode
28 mA typical active read current for Word Mode
30 mA typical program/erase current
Enhanced power management for standby
mode
1 A typical standby current
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Hardware RESET pin
Resets internal state machine to the read mode
GENERAL DESCRIPTION
The Am29F400A is a 4 Mbit, 5.0 Volt-only Flash memory
organized as 512 Kbytes of 8 bits each or 256 Kwords
of 16 bits each. The 4 Mbits of data is divided into 11
sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte,
and seven 64 Kbytes, for flexible erase capability. The
8 bits of data will appear on DQ0DQ7 or 16 bits on
DQ0DQ15. The Am29F400A is offered in 44-pin SO
and 48-pin TSOP packages. This device is designed
to be programmed in-system with the standard system
5.0 Volt VCC supply. 12.0 Volt VPP is not required for
program or erase operations. The device can also be reprogrammed in standard EPROM programmers.
The standard Am29F400A offers access times of

60 ns, 70 ns, 90 ns, 120 ns and 150 ns, allowing high
speed microprocessors to operate without wait states.
To eliminate bus contention the device has separate chip enable (CE), write enable (WE) and output
enable (OE) controls.
The Am29F400A is entirely command set compatible
with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register contents serve as input to an internal state-machine
which controls the erase and programming circuitry.
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 20380 Rev: B Amendment/0

Issue Date: April 1997
5.0 V-only Flash
Package options
44-pin SO
48-pin TSOP
Embedded Program Algorithms
P R E L I M I N A R Y
Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from 12.0 Volt Flash or EPROM devices.
The Am29F400A is programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm
that automatically times the program pulse widths and
verifies proper cell margin. Erase is accomplished by
executing the erase command sequence. This
will invoke the Embedded Erase Algorithm which is an
internal algorithm that automatically preprograms the
array if it is not already programmed before executing
the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper
cell margin.
AMDs Flash technology combines years of Flash

memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The Am29F400A memory electrically erases all
b i t s w i t h i n a s e c t o r s i mu l t a n e o u s l y v i a
Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM
programming mechanism of hot electron injection.
Flexible Sector-Erase Architecture

One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and
seven 64 Kbyte sectors
Individual-sector or multiple-sector erase capability
Sector protection is user definable
(x8)
This device also features a sector erase architecture.

This allows for sectors of memory to be erased and reprogrammed without affecting the data contents of
other sectors. A sector is typically erased and verified
within 1.5 seconds. The Am29F400A is erased when
shipped from the factory.
SA10
16 Kbyte
SA9
8 Kbyte
SA8
8 Kbyte
SA7
32 Kbyte
SA6
64 Kbyte
SA5
64 Kbyte
SA4
64 Kbyte
AMD has implemented an Erase Suspend feature that

enables the user to put erase on hold for any period of
time to read data from a sector that was not being
erased. Thus, true background erase can be achieved.
SA3
64 Kbyte
SA2
64 Kbyte
SA1
64 Kbyte
The device features single 5.0 Volt power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the
program and erase operations. A low VCC detector automatically inhibits write operations during power transitions. The end of program or erase is detected by the
RY/BY pin. Data Polling of DQ7, or by the Toggle Bit
(DQ6). Once the end of a program or erase cycle has
been completed, the device automatically resets to the
read mode.
SA0
64 Kbyte
The Am29F400A device also features hardware sector

protection. This feature will disable both program and
erase operations in any combination of eleven sectors
of memory.
The Am29F400A also has a hardware RESET pin.

When this pin is driven low, execution of any Embedded Program Algorithm or Embedded Erase Algorithm
will be terminated. The internal state machine will then
be reset into the read mode. The RESET pin may be
tied to the system reset circuitry. Therefore, if a system
reset occurs during the Embedded Program Algorithm
or Embedded Erase Algorithm, the device will be automatically reset to the read mode and will have erroneous data stored in the address locations being
operated on. These locations will need rewriting after
the Reset. Resetting the device will enable the systems microprocessor to read the boot-up firmware
from the Flash memory.
(x16)
7FFFFh 3FFFFh
7BFFFh 3DFFFh
79FFFh 3CFFFh
77FFFh 3BFFFh
6FFFFh 37FFFh
5FFFFh 2FFFFh
4FFFFh 27FFFh
3FFFFh 1FFFFh
2FFFFh 17FFFh
1FFFFh 0FFFFh
0FFFFh 07FFFh
00000h
00000h
20380B-1
Am29F400AT Sector Architecture

(x8)
7FFFFh 3FFFFh
SA10
64 Kbyte
SA9
64 Kbyte
SA8
64 Kbyte
SA7
64 Kbyte
SA6
64 Kbyte
SA5
64 Kbyte
SA4
64 Kbyte
SA3
32 Kbyte
SA2
8 Kbyte
SA1
8 Kbyte
SA0
16 Kbyte
6BFFFh 37FFFh
5FFFFh 2FFFFh
4FFFFh 27FFFh
3FFFFh 1FFFFh
2FFFFh 17FFFh
1FFFFh 0FFFFh
0FFFFh 07FFFh
07FFFh 03FFFh
05FFFh 02FFFh
03FFFh 01FFFh
00000h
00000h
20380B-2
Am29F400AB Sector Architecture

2
(x16)
PRODUCT SELECTOR GUIDE

Family Part No:
Am29F400A
Ordering Part No:VCC = 5.0 V 5%
-65
VCC = 5.0 V 10%
-70
-90
-120
-150
Max Access Time (ns)
60
70
90
120
150
CE (E) Access (ns)
60
70
90
120
150
OE (G) Access (ns)
30
30
35
50
55
BLOCK DIAGRAM
5.0 V-only Flash
DQ0DQ15
VCC
VSS
WE
BYTE
RESET
RY/BY
Buffer
RY/BY
Input/Output
Buffers
Erase Voltage
Generator
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE
OE
VCC Detector
A0-A17
Timer
Address Latch
STB
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
A-1
20380B-3
CONNECTION DIAGRAMS
SO
NC
44
RESET
RY/BY
43
WE
A17
42
A8
A7
41
A9
A6
40
A10
A5
39
A11
A4
38
A12
A3
37
A13
A2
36
A14
A1
10
35
A15
A0
11
34
A16
CE
12
33
BYTE
VSS
OE
13
32
14
31
VSS
DQ15/A-1
DQ0
15
30
DQ7
DQ8
16
29
DQ14
DQ1
17
28
DQ6
DQ9
18
27
DQ13
DQ2
19
26
DQ5
DQ10
20
25
DQ12
DQ3
21
24
DQ4
DQ11
22
23
VCC
20380B-4
CONNECTION DIAGRAMS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A16
BYTE
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
VSS
CE
A0
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
20380B-5
Standard TSOP
A16
BYTE
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
VSS
CE
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
Reverse TSOP
5.0 V-only Flash
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
NC
NC
RY/BY
NC
A17
A7
A6
A5
A4
A3
A2
A1
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
NC
NC
RY/BY
NC
A17
A7
A6
A5
A4
A3
A2
A1
20380B-6
PIN CONFIGURATION
LOGIC SYMBOL
A1, A0A17 = 18 Addresses

BYTE
CE
= Selects 8-bit or 16-bit mode
A-1
18
= Chip Enable
DQ0DQ15
NC
= Pin Not Connected Internally
OE
= Output Enable
CE (E)
RESET
= Hardware Reset Pin, Active Low
OE (G)
RY/BY
= Ready/Busy Output
VSS
= +5.0 Volt Single-Power Supply

(10% for -90, -120, -150) or (5% for -75)
VSS
= Device Ground
WE
= Write Enable
16 or 8
A0A17
DQ0DQ15 = 16 Data Inputs/Outputs
WE (W)
RESET
BYTE
RY/BY
20380B-7
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following:
AM29F400A
-65
B
OPTIONAL PROCESSING
Blank = Standard Processing
B = Burn-In
5.0 V-only Flash
TEMPERATURE RANGE
C = Commercial (0C to +70C)
I = Industrial (-40C to +85C)
PACKAGE TYPE
E = 48-Pin Thin Small Outline Package
(TSOP) Standard Pinout (TS 048)
F = 48-Pin Thin Small Outline Package
(TSOP) Reverse Pinout (TSR048)
S = 44-Pin Small Outline Package (SO 044)
SPEED OPTION
See Product Selector Guide and
Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T = Top sector
B = Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29F400A
4 Megabit (512K x 8-Bit/256K x 16-Bit) CMOS Flash Memory
5.0 Volt-only Program and Erase
Valid Combinations
Valid Combinations
AM29F400AT/B-65
EC, EI, FC, FI, SC, SI
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
AM29F400AT/B-70
AM29F400AT/B-90
AM29F400AT/B-120
EC, EI, EE, EEB,

FC, FI, FE, FEB,
SC, SI, SE, SEB
AM29F400AT/B-150
Table 1.
Am29F400A User Bus Operations (BYTE = VIH)
Operation
CE
OE
WE
A0
A1
A6
A9
DQ0DQ15
RESET
Autoselect, AMD Manuf. Code (Note 1)
VID
Code
Autoselect Device Code (Note 1)
VID
Code
Read
A0
A1
A6
A9
DOUT
Standby
HIGH Z
Output Disable
HIGH Z
Write
A0
A1
A6
A9
DIN
Verify Sector Protect (Note 2)
VID
Code
Temporary Sector Unprotect
VID
Hardware Reset
HIGH Z
Table 2.
Operation
Am29F400A User Bus Operations (BYTE = VIL)
CE
OE
WE
A0
A1
A6
A9
Autoselect, AMD Manuf. Code

(Note 1)
VID
Code
HIGH Z
Autoselect Device Code (Note 1)
VID
Code
HIGH Z
Read
A0
A1
A6
A9
DOUT
HIGH Z
Standby
HIGH Z
HIGH Z
Output Disable
HIGH Z
HIGH Z
Write
A0
A1
A6
A9
DIN
HIGH Z
Verify Sector Protect (Note 2)
VID
Code
HIGH Z
HIGH Z
VID
Hardware Reset
HIGH Z
HIGH Z
DQ0DQ7 DQ8DQ15 RESET
Legend:
L = logic 0, H = logic 1, X = Dont Care. See Characteristics for voltage levels.
Notes:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 4.
2. Refer to the section on Sector Protection.
Read Mode
The Am29F400A has two control functions which must
be satisfied in order to obtain data at the outputs. CE is
the power control and should be used for device selection. OE is the output control and should be used to
gate data to the output pins if a device is selected.
Address access time (tACC) is equal to the delay from
stable addresses to valid output data. The chip enable
access time (tCE) is the delay from stable addresses
and stable CE to valid data at the output pins.
The output enable access time is the delay from the
falling edge of OE to valid data at the output pins (as-
suming the addresses have been stable for at least

tACC-tOE time).
Standby Mode
There are two ways to implement the standby mode on
the Am29F400A device, both using the CE pin.
A CMOS standby mode is achieved with the CE input
held at VCC 0.5 V. Under this condition the current is
typically reduced to less than 5 A. A TTL standby
mode is achieved with the CE pin held at VIH. Under
this condition the current is typically reduced to 1 mA.
In the standby mode the outputs are in the high impedance state, independent of the OE input.
Output Disable
Am29F400A is erased or programmed in a system

without access to high voltage on the A9 pin. The command sequence is illustrated in Table 4 (see Autoselect
Command Sequence).
With the OE input at a logic high level (VIH), output from

the device is disabled. This will cause the output pins to
be in a high impedance state.
The autoselect mode allows the reading of a binary

code from the device and will identify its manufacturer
and type. This mode is intended for use by programming equipment for the purpose of automatically
matching the device to be programmed with its corresponding programming algorithm. This mode is functional over the entire temperature range of the device.
To activate this mode, the programming equipment
must force VID (11.5 V to 12.5 V) on address pin A9.
Two identifier bytes may then be sequenced from the
device outputs by toggling address A0 from VIL to VIH.
All addresses are dont cares except A0, A1, and A6
(see Table 3).
The autoselect mode also facilitates the determination

of sector protection in the system. By performing a read
operation at the address location XX02H with the
higher order address bits A12A17 set to the desired
sector address, the device will return 01H for a protected sector and 00H for a non-protected sector.
The manufacturer and device codes may also be read

via the command register, for instances when the
Table 3.
Am29F400A Sector Protection Verify Autoselect Codes
Type
A12-A17
A6
A1
A0
Code (HEX)
VIL
VIL
VIL
01H
VIL
VIL
VIH
VIL
VIL
VIH
VIL
VIH
VIL
Manufacturer Code-AMD
23H
Byte
Am29F400AT
Word
2223H
Am29F400A Device
Byte
ABH
Am29F400AB
X
Word
Sector
Address
Sector Protection
22ABH
01H*
*Outputs 01H at protected sector addresses
Table 4.
Type
Manufacturer Code-AMD
Am29F400A
Device
Expanded Autoselect Code Table
Code
DQ
15
DQ
14
DQ
13
DQ
12
DQ
11
DQ
10
DQ
9
01H
DQ DQ DQ DQ DQ DQ DQ DQ DQ
8
7
6
5
4
3
2
1
0
0
A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z

Am29F400AT(B) 23H
(W) 2223H 0
0
1
0
0
0
1
0
Am29F400AB(B) ABH A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z
(W) 22ABH 0
0
1
0
0
0
1
0
Sector Protection
01H
B) - Byte mode
(W) - Word mode
5.0 V-only Flash
Byte 0 (A0 = VIL) represents the manufacturers code

(AMD=01H) and byte 1 (A0 = VIH) the device identifier
code (Am29F400AT = 23H and Am29F400AB = ABH
for x8 mode; Am29F400AT = 2223H and Am29F400AB
= 22ABH for x16 mode). These two bytes/words are
given in the table below. All identifiers for manufacturer
and device will exhibit odd parity with DQ7 defined as
the parity bit. In order to read the proper device codes
when executing the Autoselect, A1 must be V IL
(see Tables 3 and 4).
Autoselect
Table 5.
Sector Address Tables (Am29F400AT)
A17
A16
A15
A14
A13
A12
(x8) Address
Range
(x16) Address
Range
SA0
00000h-0FFFFh
00000h-07FFFh
SA1
10000h-1FFFFh
08000h-0FFFFh
SA2
20000h-2FFFFh
10000h-17FFFh
SA3
30000h-3FFFFh
18000h-1FFFFh
SA4
40000h-4FFFFh
20000h-27FFFh
SA5
50000h-5FFFFh
28000h-2FFFFh
SA6
60000h-6FFFFh
30000h-37FFFh
SA7
70000h-77FFFh
38000h-3BFFFh
SA8
78000h-79FFFh
3C000h-3CFFFh
SA9
7A000h-7BFFFh
3D000h-3DFFFh
SA10
7C000h-7FFFFh
3E000h-3FFFFh
Table 6.
Sector Address Tables (Am29F400AB)
A17
A16
A15
A14
A13
A12
(x8) Address
Range
(x16) Address
Range
SA0
00000h-03FFFh
00000h-01FFFh
SA1
04000h-05FFFh
02000h-02FFFh
SA2
06000h-07FFFh
03000h-03FFFh
SA3
08000h-0FFFFh
04000h-07FFFh
SA4
10000h-1FFFFh
08000h-0FFFFh
SA5
20000h-2FFFFh
10000h-17FFFh
SA6
30000h-3FFFFh
18000h-1FFFFh
SA7
40000h-4FFFFh
20000h-27FFFh
SA8
50000h-5FFFFh
28000h-2FFFFh
SA9
60000h-6FFFFh
30000h-37FFFh
SA10
70000h-7FFFFh
38000h-3FFFFh
Write
Device erasure and programming are accomplished via
the command register. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the function of the device.
The command register itself does not occupy any addressable memory location. The register is a latch used
to store the commands, along with the address and data
information needed to execute the command. The command register is written to by bringing WE to VIL, while
CE is at VIL and OE is at VIH. Addresses are latched on
the falling edge of WE or CE, whichever happens later;
while data is latched on the rising edge of WE or CE,
whichever happens first. Standard microprocessor write
timings are used.
10
Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters.
Sector Protection
The Am29F400A features hardware sector protection.
This feature will disable both program and erase operations in any combination of ten sectors of memory. The
sector protect feature is enabled using programming
equipment at the users site. The device is shipped with
all sectors unprotected. Alternatively, AMD may program
and protect sectors in the factory prior to shipping the
device (AMDs ExpressFlash Service).
It is possible to determine if a sector is protected in the
system by writing an Autoselect command. Performing
a read operation at the address location XX02H, where
the higher order address bits A12A17 is the desired
sector address, will produce a logical 1 at DQ0 for a
protected sector. See Table 3 for Autoselect codes.
Command Definitions
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values
or writing them in the improper sequence will reset
the device to the read mode. Table 7 defines the valid
r e g i s t e r c o m m a n d s e q u e n c e s. N o t e t h a t t h e
Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector Erase operation
is in progress. Moreover, both Reset/Read commands
are functionally equivalent, resetting the device to the
read mode.
11
5.0 V-only Flash
This feature allows temporary unprotection of previously protected sectors of the Am29F400A device in
order to change data in-system. The Sector Unprotect
mode is activated by setting the RESET pin to high voltage (12V). During this mode, formerly protected sectors can be programmed or erased by selecting the
sector addresses. Once the 12 V is taken away from
the RESET pin, all the previously protected sectors will

be protected again. Refer to Figures 16 and 17.
Table 7.
Am29F400A Command Definitions (Notes 17)
Command
Sequence
Read/Reset
Bus
Write
Cycles
Reqd
First Bus
Write Cycle
Second Bus
Write Cycle
Third Bus
Write Cycle
Fourth Bus
Read/Write Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr
Addr
Addr
Data
Addr
Data
Addr
Addr
Data
Reset/Read
XXXXH F0H
F0H
RA
RD
90H
01H
2223H
(T Device ID)
22ABH
(B Device ID)
2AAAH 55H
5555H
10H
5555H
AAAAH
Reset/
Read
Word
Data
5555H AAH 2AAAH 55H
5555H
AAAAH
AAAAH
3
Byte
Word
Autoselect
Data
Byte
5555H
5555H AAH 2AAAH 55H
5555H
AAAAH
AAAAH
5555H
23H
(T Device ID)
ABH
(B Device ID)
Word
/Byte
Word
00H
4
Data
5555H AAH 2AAAH 55H
5555H A0H
AAAAH
AAAAH
01H (T/B
Manuf. ID)
PA
PD
5555H
AAH
Program
Byte
Word
5555H
5555H AAH 2AAAH 55H
5555H
AAAAH
AAAAH
80H
Chip Erase
Byte
Sector
Erase
Word
Byte
5555H
5555H AAH 2AAAH 55H
5555H
AAAAH
AAAAH
Erase Suspend
XXXXH B0H
Erase Resume
XXXXH 30H
5555H
AAAAH
80H
5555H
AAH
AAAAH
2AAAH 55H
SA
30H
5555H
Notes:
1. Bus operations are defined in Tables 1 and 2.
2. RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse.
SA = Address of the sector to be erased. The combination of A17A12 will uniquely select any sector.
3. RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE.
4. Reading from non-erasing sectors is allowed in the Erase Suspend mode.
5. Address bits A17A15 are dont care for unlock and command cycles.
6. The system should generate the following address patterns:
Word Mode: 5555H or 2AAAH to addresses A0A14
Byte Mode: AAAAH or 5555H to addresses A-1A14.
Read/Reset Command
The read or reset operation is initiated by writing the
read/reset command sequence into the command register. Microprocessor read cycles retrieve array data
from the memory. The device remains enabled for
reads until the command register contents are altered.
12
The device will automatically power-up in the read/

reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read
cycles will retrieve array data. This default value ensures that no spurious alteration of the memory content
occurs during the power transition. Refer to the AC
Read Characteristics and Waveforms for the specific
timing parameters.
Autoselect Command
Flash memories are intended for use in applications
where the local CPU can alter memory contents. As
s u c h , m a nu f a c t u r e a n d d e v i c e c o d e s m u s t
be accessible while the device resides in the target
system. PROM programmers typically access the signature codes by raising A9 to a high voltage. However,
multiplexing high voltage onto the address lines is not
generally a desirable system design practice.
All manufacturer and device codes will exhibit odd parity with DQ7 defined as the parity bit.
Furthermore, the write protect status of sectors can be
read in this mode. Scanning the sector addresses
(A17, A16, A15, A14, A13, and A12) while (A6, A1, A0)
= (0, 1, 0) will produce a logical 1 at device output
DQ0 for a protected sector.
To terminate the operation, it is necessary to write the
read/reset command sequence into the register.
Byte/Word Programming
The device is programmed on a byte-by-byte (or
word-by-word) basis. Programming is a four bus cycle
operation. There are two unlock write cycles. These
are followed by the program setup command and data
write cycles. Addresses are latched on the falling edge
of CE or WE, whichever happens later and the data is
latched on the rising edge of CE or WE, whichever happens first. The rising edge of CE or WE (whichever happens first) begins programming using the Embedded
Program Algorithm. Upon executing the algorithm, the
system is not required to provide further controls or timings. The device will automatically provide adequate internally generated program pulses and verify the
programmed cell margin.
The automatic programming operation is completed
when the data on DQ7 (also used as Data Polling) is
equivalent to the data written to this bit at which time
the device returns to the read mode and addresses are
no longer latched (see Table 8, Write Operation Status). Therefore, the device requires that a valid address
to the device be supplied by the system at this particular instance of time for Data Polling operations. Data
Polling must be performed at the memory location
which is being programmed.
Programming is allowed in any sequence and across

sector boundaries. Beware that a data 0 cannot be
programmed back to a 1. Attempting to do so may
cause the device to exceed programming time limits
(DQ5 = 1) or result in an apparent success according
to the data polling algorithm but a read from reset/read
mode will show that the data is still 013. Only erase
operations can convert 0s to 1s.
Figure 1 illustrates the Embedded Programming Algori t h m u s i n g t y p i c a l c o m m a n d s t r i n g s a n d
bus operations.
Chip Erase
Chip erase is a six bus cycle operation. There are two
unlock write cycles. These are followed by writing the
setup command. Two more unlock write cycles are
then followed by the chip erase command.
Chip erase does not require the user to program the
device prior to erase. Upon executing the Embedded
Erase Algorithm command sequence the device will
automatically program and verify the entire memory for
an all zero data pattern prior to electrical erase. The
erase is performed sequentially on all sectors at the
same time (see Table Erase and Programming Performance). The system is not required to provide any
controls or timings during these operations.
The automatic erase begins on the rising edge of the
last WE pulse in the command sequence and terminates when the data on DQ7 is 1 (see Write Operation
Status section) at which time the device returns to read
the mode.
Figure 1 illustrates the Embedded Erase Algorithm
using typical command strings and bus operations.
Sector Erase
Sector erase is a six bus cycle operation. There are two
unlock write cycles. These are followed by writing the
set-up command. Two more unlock write cycles are
then followed by the sector erase command. The sector
a d d r e s s ( a ny a d d r e s s l o c a t i o n w i t h i n t h e
desired sector) is latched on the falling edge of WE,
while the command (30H) is latched on the rising edge
of WE. After a time-out of 100 s from the rising edge
of the last sector erase command, the sector erase operation will begin.
Multiple sectors may be erased sequentially by writing
the six bus cycle operations as described above. This
sequence is followed with writes of the Sector Erase
command to addresses in other sectors desired to be
sequentially erased. The time between writes must be
less than 100 s otherwise that command will not be
13
5.0 V-only Flash
The device contains an autoselect command operation

to supplement traditional PROM programming methodology. The operation is initiated by writing the autoselect command sequence into the command register.
Following the command write, a read cycle from address XX00H retrieves the manufacture code of 01H. A
read cycle from address XX01H returns the device
code (Am29F400AT = 23H and Am29F400AB = ABH
for x8 mode; Am29F400AT = 2223H and Am29F400AB
= 22ABH for x16 mode) (see Tables 3 and 4).
Any commands written to the chip during the Embedded Program Algorithm will be ignored. If a hardware
reset occurs during the programming operation, the
data at that particular location will be corrupted.
accepted and erasure will start. It is recommended that
processor interrupts be disabled during this time to
guarantee this condition. The interrupts can be
re-enabled after the last Sector Erase command
is written. A time-out of 100 s from the rising edge of
the last WE will initiate the execution of the Sector
Erase command(s). If another falling edge of the WE
occurs within the 100 s time-out window the timer is
reset. (Monitor DQ3 to determine if the sector erase
timer window is still open, see section DQ3, Sector
Erase Timer.) Any command other than Sector Erase
or Erase Suspend during this period will reset the device to the read mode, ignoring the previous command
string. In that case, restart the erase on those sectors
and allow them to complete.
(Refer to the Write Operation Status section for DQ3,
Sector Erase Timer operation.) Loading the sector
erase buffer may be done in any sequence and with
any number of sectors (0 to10).
Sector erase does not require the user to program the
device prior to erase. The device automatically programs all memory locations in the sector(s) to be
erased prior to electrical erase. When erasing a sector
or sectors the remaining unselected sectors are not affected. The system is not required to provide any controls or timings during these operations.
The automatic sector erase begins after the 100 s
time out from the rising edge of the WE pulse for the
last sector erase command pulse and terminates when
the data on DQ7, Data Polling, is 1 (see Write Operation Status section) at which time the device returns to
the read mode. Data Polling must be performed at an
address within any of the sectors being erased.
Figure 1 illustrates the Embedded Erase Algorithm
using typical command strings and bus operations.
Erase Suspend
The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data
reads from a sector not being erased. This command is
applicable ONLY during the Sector Erase operation
which includes the time-out period for sector erase. The
Erase Suspend command will be ignored if written duri n g t h e C h i p E ra s e o p e r a t i o n o r E m b e d d e d
Program Algorithm. Writing the Erase Suspend command during the Sector Erase time-out results in immediate termination of the time-out period and suspension
of the erase operation.
Any other command written during the Erase Suspend
m o d e w i l l b e i g n o r e d ex c e p t t h e E r a s e
Resume command. Writing the Erase Resume command resumes the erase operation. The addresses are
dont-cares when writing the Erase Suspend or Erase
Resume command.
When the Erase Suspend command is written during
the Sector Erase operation, the device will take a maximum of 15 s to suspend the erase operation. When
the device has entered the erase-suspended mode,
DQ6 will stop toggling. The user must use the address
of a sector being erased for reading DQ6 to determine
if the erase operation has been suspended. Further
writes of the Erase Suspend command are ignored.
When the erase operation has been suspended, the
device defaults to the erase-suspend-read mode.
Reading data in this mode is the same as reading from
the standard read mode except that the data must be
r e a d f r o m s e c t o r s t h a t h ave n o t b e e n
erase-suspended.
To resume the operation of Sector Erase, the Resume
command (30H) should be written. Any further writes of
the Resume command at this point will be ignored. Another Erase Suspend command can be written after the
chip has resumed erasing.
Write Operation Status

Table 8.
Write Operation Status
Status
DQ7
DQ6
DQ5
DQ3
Auto-Programming
DQ7
Toggle
Toggle
DQ7
Toggle
Toggle
In Progress
Program/Erase in Auto-Erase
Exceeded
Time Limits
Auto-Programming
Program/Erase in Auto-Erase
Notes:
1. D8D15 = Dont Care for x16 mode.
2. DQ4 for AMD internal use only.
14
DQ7
Data Polling
For chip erase, the Data Polling is valid after the rising
edge of the sixth WE pulse in the six write pulse sequence. For sector erase, the Data Polling is valid after
the last rising edge of the sector erase WE pulse. Data
Polling must be performed at sector addresses within
any of the sectors being erased and not a protected
sector. Otherwise, the status may not be valid.
Just prior to the completion of Embedded Algorithm
operations DQ7 may change asynchronously while
the output enable (OE) is asserted low. This means
that the device is driving status information on DQ7 at
one instant of time and then that bytes valid data at
the next instant of time. Depending on when the system samples the DQ7 output, it may read the status or
valid data. Even if the device has completed the Embedded Algorithm operations and DQ7 has a valid
data, the data outputs on DQ0DQ6 may be still invalid. The valid data on DQ0DQ7 will be read on the
successive read attempts.
The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm, or sector erase time-out (see Table 7).
See Figure 10 for the Data Polling timing specifications
and diagrams.
DQ6
Toggle Bit
The Am29F400A also features the Toggle Bit as a
method to indicate to the host system that the embedded algorithms are in progress or completed.
During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data
from the device at any address will result in DQ6 toggling between one and zero. Once the Embedded Program or Erase Algorithm cycle is completed, DQ6 will
stop toggling and valid data will be read on the next
successive attempt. During programming, the Toggle
Bit is valid after the rising edge of the fourth WE pulse
in the four write pulse sequence. For chip erase, the
Either CE or OE toggling will cause DQ6 to toggle. In

addition, an Erase Suspend/Resume command will
cause DQ6 to toggle. See Figure 11 for the Toggle Bit
timing specifications and diagrams.
DQ5
Exceeded Timing Limits
DQ5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count).
Under these conditions DQ5 will produce a 1. This is
a failure condition which indicates that the program or
erase cycle was not successfully completed. Data Polling is the only operating function of the device under
this condition. The CE circuit will partially power down
the device under these conditions (to approximately 2
mA). The OE and WE pins will control the output disable functions as described in Table 1.
The DQ5 failure condition will also appear if a user tries
to program a 1 to a location that is previously programmed to 0. In this case the device locks out and
never completes the Embedded Program Algorithm.
Hence, the system never reads a valid data on DQ7 bit
and DQ6 never stops toggling. Once the device has exceeded timing limits, the DQ5 bit will indicate a 1.
Please note that this is not a device failure condition
since the device was incorrectly used. If this occurs,
reset the device.
DQ3
Sector Erase Timer
After the completion of the initial sector erase command sequence the sector erase time-out will begin.
DQ3 will remain low until the time-out is complete. Data
Polling and Toggle Bit are valid after the initial sector
erase command sequence.
If Data Polling or the Toggle Bit indicates the device has
been written with a valid erase command, DQ3 may be
used to determine if the sector erase timer window is
still open. If DQ3 is high (1) the internally controlled
erase cycle has begun; attempts to write subsequent
commands (other than Erase Suspend) to the device
will be ignored until the erase operation is completed as
indicated by Data Polling or Toggle Bit. If DQ3 is low
(0), the device will accept additional sector erase
commands. To insure the command has been accepted, the system software should check the status of
DQ3 prior to and following each subsequent sector
erase command. If DQ3 were high on the second status check, the command may not have been accepted.
Refer to Table 8: Write Operation Status.
15
5.0 V-only Flash
The Am29F400A device features Data Polling as a

method to indicate to the host that the embedded algori t h m s a r e i n p r o gr e s s o r c o m p l e t e d . D u r i n g
the Embedded Program Algorithm an attempt to read
the device will produce the complement of the data last
written to DQ7. Upon completion of the Embedded Program Algorithm, an attempt to read the device will produce the true data last written to DQ7. During the
Embedded Erase Algorithm, an attempt to read
the device will produce a 0 at the DQ7 output.
Upon completion of the Embedded Erase Algorithm an
attempt to read the device will produce a 1 at the DQ7
output. The flowchart for Data Polling (DQ7) is shown
in Figure 2.
Toggle Bit is valid after the rising edge of the sixth WE

pulse in the six write pulse sequence. For Sector erase,
the Toggle Bit is valid after the last rising edge of the
sector erase WE pulse. The Toggle Bit is active during
the sector time-out.
RY/BY
Ready/Busy
The Am29F400A provides a RY/BY open-drain output
pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or have been
completed. If the output is low, the device is busy with
either a program or erase operation. If the output is
high, the device is ready to accept any read/write or
erase operation. When the RY/BY pin is low, the device
will not accept any additional program or erase commands with the exception of the Erase Suspend command. If the Am29F400A is placed in an Erase
Suspend mode, the RY/BY output will be high.
During programming, the RY/BY pin is driven low after
the rising edge of the fourth WE pulse. During an erase
operation, the RY/BY pin is driven low after the rising
edge of the sixth WE pulse. The RY/BY pin should be
ignored while RESET is at VIL. Refer to Figure 12 for a
detailed timing diagram.
Since this is an open-drain output, several RY/BYpins
can be tied together in parallel with a pull-up resistor
to VCC.
RESET
Hardware Reset
The Am29F400A device may be reset by driving the
RESET pin to VIL. The RESET pin must be kept low
(VIL) for at least 500 ns. Any operation in progress will
be terminated and the internal state machine will be
reset to the read mode 20 s after the RESET pin is
driven low. Furthermore, once the RESET pin goes
high, the device requires an additional 50 ns before it
will allow read access. When the RESET pin is low, the
device will be in the standby mode for the duration of
the pulse and all the data output pins will be tri-stated.
If a hardware reset occurs during a program or erase
operation, the data at that particular location will
be indeterminate.
The RESET pin may be tied to the system reset input.
Therefore, if a system reset occurs during the Embedded Program or Erase Algorithm, the device will be automatically reset to read mode and this will enable the
systems microprocessor to read the boot-up firmware
from the Flash memory.
Byte/Word Configuration
The BYTE pin selects the byte (8-bit) mode or word
(16 bit) mode for the Am29F400A device. When this
pin is driven high, the device operates in the word (16
16
bit) mode. The data is read and programmed

at DQ0DQ15. When this pin is driven low, the device operates in byte (8 bit) mode. Under this mode,
the DQ15/A-1 pin becomes the lowest address bit
and DQ8DQ14 bits are tri-stated. However, the
command bus cycle is always an 8-bit operation and
hence commands are written at DQ0DQ7 and the
DQ8DQ15 bits are ignored. Refer to Figures 14 and
15 for the timing diagram.
Data Protection
The Am29F400A is designed to offer protection against
accidental erasure or programming caused by spurious
system level signals that may exist during power transitions. During power up the device automatically resets
the internal state machine in the Read mode. Also, with
its control register architecture, alteration of the memory contents only occurs after successful completion of
specific multi-bus cycle command sequences.
The device also incorporates several features to prevent inadvertent write cycles resulting from V CC
power-up and power-down transitions or system noise.
Low VCC Write Inhibit

To avoid initiation of a write cycle during VCC power-up
and power-down, the Am29F400A locks out write cycles for VCC < VLKO (see DC Characteristics section for
voltages). When VCC < VLKO, the command register is
d i s a bl e d , a l l i n t e r n a l p r o gra m / e ra s e c i r c u i t s
are disabled, and the device resets to the read mode.
The Am29F400A ignores all writes until VCC > VLKO.
The user must ensure that the control pins are in the
correct logic state when VCC > VLKO to prevent unintentional writes.
Write Pulse Glitch Protection

Noise pulses of less than 5 ns (typical) on OE, CE, or
WE will not initiate a write cycle.
Logical Inhibit
Writing is inhibited by holding any one of OE = VIL,CE
= VIH, or WE = VIH. To initiate a write cycle CE and WE
must be a logical zero while OE is a logical one.
Power-Up Write Inhibit

Power-up of the device with WE = CE = VIL and OE =
VIH will not accept commands on the rising edge of WE.
The internal state machine is automatically reset to the
read mode on power-up.
EMBEDDED ALGORITHMS
Start
Write Program Command Sequence

(see below)
Data Poll Device
5.0 V-only Flash
No
Increment Address
Last Address
?
Yes
Programming Completed
Program Command Sequence (Address/Command):
5555H/AAH
2AAAH/55H
5555H/A0H
Program Address/Program Data

20380B-8
Figure 1.
Embedded Programming Algorithm
17
EMBEDDED ALGORITHMS
Start
Write Erase Command Sequence
(see below)
Data Polling or Toggle Bit
Successfully Completed
Erasure Completed
Chip Erase Command Sequence

(Address/Command):
Individual Sector/Multiple Sector

Erase Command Sequence
(Address/Command):
5555H/AAH
5555H/AAH
2AAAH/55H
2AAAH/55H
5555H/80H
5555H/80H
5555H/AAH
5555H/AAH
2AAAH/55H
2AAAH/55H
5555H/10H
Sector Address/30H
Sector Address/30H
Additional sector
erase commands
are optional
Sector Address/30H
20380B-9
Note:
To insure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 were high on the second status check, the command may not have been accepted.
Figure 2.
18
Embedded Erase Algorithm
Start
VA = Byte address for programming

= any of the sector addresses within the
sector being erased during sector erase
operation
= Valid address equals any non-protected
sector group address during chip erase
Read Byte
(DQ0-DQ7)
Addr=VA
DQ7=Data
?
Yes
No
5.0 V-only Flash
No
DQ5=1
?
Yes
Read Byte
(DQ0-DQ7)
Addr=VA
DQ7=Data
?
No
Yes
Pass
Fail
20380B-10
Note:
DQ7 is rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.
Figure 3.
Data Polling Algorithm
19
Start
Read Byte
(DQ0DQ7)
Addr=Dont Care
DQ6=Toggle
?
No
Yes
No
DQ5=1
?
Yes
Read Byte
(DQ0DQ7)
Addr=Dont Care
DQ6=Toggle
?
No
Yes
Pass
Fail
20380B-11
Note:
DQ6 is rechecked even if DQ5 = 1 because DQ6 may stop toggling at the same time as DQ5 changing to 1.
Figure 4.
Toggle Bit Algorithm
20 ns
20 ns
+0.8 V
-0.5 V
-2.0 V
20380B-12
20 ns
Figure 5.
Maximum Negative Overshoot Waveform

20 ns
VCC + 2.0 V
VCC + 0.5 V
2.0 V
20 ns
Figure 6.
20
20 ns
Maximum Positive Overshoot Waveform

20380B-13
ABSOLUTE MAXIMUM RATINGS
OPERATING RANGES
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . -65C to +125C
Commercial (C) Devices
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . -55C to +125C
Industrial (I) Devices
Voltage with Respect to Ground

All pins except A9, OE and RESET
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . -2.0 V to +7.0 V
Extended (E) Devices
Ambient Temperature (TA). . . . . . . . . . . . 0C to +70C

Ambient Temperature (TA). . . . . . . . . . -40C to +85C
Ambient Temperature (TA). . . . . . . . . -55C to +125C
VCC Supply Voltages
VCC for Am29F400T/B-65, . . . . . . +4.75 V to +5.25 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
VCC for Am29F400T/B-70, -90,

-120, -150 . . . . . . . . . . . . . . . . . . . +4.50 V to +5.50 V
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5 V. During
voltage transitions, input or I/O pins may undershoot VSS
to -2.0 V for periods of up to 20 ns. Maximum DC voltage
on input or I/O pins is VCC +0.5 V. During voltage
transitions, input or I/O pins may overshoot to VCC +2.0 V
for periods up to 20 ns. See Figure 7 and Figure 8.
Operating ranges define those limits between which the functionality of the device is guaranteed.
2. Minimum DC input voltage on pins A9, OE, and RESET is

-0.5 V. During voltage transitions, A9, OE, and RESET
may undershoot VSS to -2.0 V for periods of up to 20 ns.
Maximum DC input voltage on pin A9 is +12.5 V which
may overshoot to 14.0 V for periods up to 20 ns. See
Figure 7 and Figure 8.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
4. Stresses above those listed under Absolute Maximum
Ratings may cause permanent damage to the device.
This is a stress rating only; functional operation of the
device at these or any other conditions above those
indicated in the operational sections of this data sheet is
not implied. Exposure of the device to absolute maximum
rating conditions for extended periods may affect device
reliability.
21
5.0 V-only Flash
VCC (Note 1). . . . . . . . . . . . . . . . . . . . -2.0 V to +7.0 V

A9, OE, and RESET (Note 2). . . . . . -2.0 V to +13.0 V
DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Max
Unit
1.0
50
1.0
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC Max
ILIT
A9, OE, RESET Input Load Current
VCC = VCC Max, A9, OE, RESET = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max
ICC1
VCC Active Read Current (Note 1)
CE = VIL, OE = VIH
ICC2
VCC Active Program/Erase Current

(Notes 2, 3)
CE = VIL, OE = VIH
60
mA
ICC3
VCC Standby Current
VCC = VCC Max, CE = VIH, OE = VIH
1.0
mA
VIL
Input Low Voltage
0.5
0.8
VIH
Input High Voltage
2.0
VCC + 0.5
11.5
12.5
0.45
VID
Voltage for Autoselect and

VCC = 5.0 V
VOL
Output Low Voltage
IOL = 5.8 mA, VCC = VCC Min
VOH
Output High Voltage
IOH = -2.5 mA, VCC = VCC Min
VLKO
Low VCC Lock-Out Voltage
Byte
40
Word
50
mA
2.4
3.2
V
4.2
Notes:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 6 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Program or Erase Algorithm is in progress.
3. Not 100% tested.
22
DC CHARACTERISTICS (continued)
CMOS Compatible
Parameter
Symbol
Test Conditions
Min
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC Max
ILIT
A9, OE, RESET Input Load

Current
VCC = VCC Max, A9, OE,
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max
ICC1
VCC Active Read Current (Note 1) CE = VIL, OE = VIH
ICC2
VCC Active Program/Erase

Current (Notes 2, 3)
ICC3
VCC Standby Current (Note 4)
VIL
Input Low Voltage
VIH
Input High Voltage
VID
Voltage for Autoselect and

VCC = 5.0 V
VOL
Output Low Voltage
IOL = 5.8 mA, VCC = VCC Min
Output Low Voltage
VOH2
VLKO
RESET = 12.5 V
Max
Unit
1.0
50
1.0
Byte
20
40
Word
28
50
CE = VIL, OE = VIH
30
50
mA
VCC = VCC Max, CE = VIH,

OE = VIH
-0.5
0.8
0.7 x
VCC
VCC +
0.3
11.5
12.5
0.45
mA
IOH = 2.5 mA, VCC = VCC Min
0.85
VCC
IOH = 100 A, VCC = VCC Min
VCC -0.4
Low VCC Lock-Out Voltage
3.2
4.2
Notes:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 6 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Program or Erase Algorithm is in progress.
3. Not 100% tested.
4. ICC3 = 20 A max at extended temperatures (> +85C).
23
5.0 V-only Flash
VOH1
Typ
AC CHARACTERISTICS
Read-Only Operations Characteristics
Parameter
Symbols
Speed Option (Notes 1 and 2)
JEDEC
Standard Description
tAVAV
tRC
Test Setup
Read Cycle Time (Note 4)
-65
-70
-90
-120
-150
Unit
Min
60
70
90
120
150
ns
CE = VIL
OE = VIL
Max
60
70
90
120
150
ns
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay OE = VIL
Max
60
70
90
120
150
ns
tGLQV
tOE
Output Enable to Output

Delay
Max
30
30
35
50
55
ns
tEHQZ
tDF
Chip Enable to Output High Z

(Notes 3, 4)
Max
20
20
20
30
35
ns
tGHQZ
tDF
Output Enable to Output

High Z (Notes 3, 4)
Max
20
20
20
30
35
ns
tAXQX
tOH
Output Hold Time From

Addresses, CE or OE,
Whichever Occurs First
Min
ns
tReady
RESET Pin Low to Read

Mode (Note 4)
Max
20
20
20
20
20
tELFL
tELFH
CE to BYTE Switching Low

or High
Max
ns
Notes:
Input Pulse Levels: 0.45 V to 2.4 V
Timing Measurement Reference Level: 0.8 V and 2.0 V
input and output
1. Test Conditions (for -65 only)

Output Load: 1 TTL gate and 30 pF
Input Rise and Fall Times: 5 ns
Input Pulse Levels:0.0 V to 3.0 V
Timing Measurement Reference Level: 1.5 V input
and output
3. Output Driver Disable Time

4. Not 100% tested.
2. Test Conditions (for -70, -90, -120, -150)

Output Load: 1 TTL gate and 100 pF
Input Rise and Fall Times: 20 ns
5.0 V
IN3064
or Equivalent
Device
Under
Test
CL
6.2 k
2.7 k
IN3064 or Equivalent
Notes:
For -65: CL = 30 pF including jig capacitance
For all others: CL = 100 pF including jig capacitance

20380B-14
Figure 7.
24
Test Conditions
AC CHARACTERISTICS
Write (Erase/Program) Operations
Parameter Symbols
JEDEC
Standard
Description
-70
-90
-120
-150
Unit
tAVAV
tWC
Write Cycle Time
Min
60
70
90
120
150
ns
tAVWL
tAS
Address Setup Time
Min
ns
tWLAX
tAH
Address Hold Time
Min
45
45
45
50
150
ns
tDVWH
tDS
Data Setup Time
Min
30
30
45
50
50
ns
tWHDX
tDH
Data Hold Time
Min
ns
Output
Enable
Hold Time
Read (Note 2)
Min
ns
tOEH
Toggle and Data Polling

(Note 2)
Min
10
10
10
10
10
ns
tGHWL
tGHWL
Read Recovery Time Before Write

(OE High to WE Low)
Min
ns
tELWL
tCS
CE Setup Time
Min
ns
tWHEH
tCH
CE Hold Time
Min
ns
tWLWH
tWP
Write Pulse Width
Min
35
35
45
50
50
ns
tWHDL
tWPH
Write Pulse Width High
Min
20
20
20
20
20
ns
Byte
Typ
tWHWH1
tWHWH1
Programming Operation
Word
Typ
14
14
14
14
14
Typ
1.0
1.0
1.0
1.0
1.0
sec
tWHWH2
tWHWH2
Sector Erase Operation (Note 1)

Max
sec
tVCS
VCC Setup Time (Note 2)
Min
50
50
50
50
50
tVIDR
Rise Time to VID (Notes 2, 3)
Min
500
500
500
500
500
ns
Min
tOESP
OE Setup Time to WE Active

(Notes 2, 3)
tRP
RESET Pulse Width
Min
500
500
500
500
500
ns
tFLQZ
BYTE Switching Low to Output High Z

(Notes 3, 4)
Max
20
20
30
30
30
ns
tBUSY
Program/Erase Valid to RY/BY Delay

(Note 2)
Min
30
30
35
50
55
ns
tRESSP
RESET Setup Time to WE Active
Min
Notes:
1. This does not include the preprogramming time.
2. Not 100% tested.
3. These timings are for Temporary Sector Unprotect operation.
4. Output Driver Disable Time.
25
5.0 V-only Flash
-65
KEY TO SWITCHING WAVEFORMS

WAVEFORM
INPUTS
OUTPUTS
Must Be
Steady
Will Be
Steady
May
Change
from H to L
Will Be
Changing
from H to L
May
Change
from L to H
Will Be
Changing
from L to H
Dont Care,
Any Change
Permitted
Changing,
State
Unknown
Does Not
Apply
Center
Line is HighImpedance
Off State
KS000010
SWITCHING WAVEFORMS
tRC
Addresses
Addresses Stable
tACC
CE
(tDF)
tOE
OE
tOEH
WE
(tCE)
(tOH)
Outputs
High Z
Output Valid
High Z
20380B-15
Figure 8.
26
AC Waveforms for Read Operations
SWITCHING WAVEFORMS
3rd Bus Cycle
Data Polling
PA
PA
5555H
Addresses
tWC
tRC
tAH
tAS
CE
tGHWL
OE
WE
tWPH
tCS
tDH
Data
PD
A0H
tDF
tOE
DQ7
DOUT
tDS
tOH
5.0 V
tCE
20380B-16
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ7 is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
6. These waveforms are for the x16 mode.
Figure 9.
Program Operation Timings
tAH
Addresses
2AAAH
5555H
5555H
5555H
2AAAH
SA
tAS
CE
tGHWL
OE
tWP
WE
tWPH
tCS
tDH
tDS
AAH
Data
VCC
55H
80H
AAH
tVCS
55H
10H/30H
20380B-17
Notes:
1. SA is the sector address for Sector Erase. Addresses = dont care for Chip Erase.
Figure 10.
AC Waveforms Chip/Sector Erase Operations

27
5.0 V-only Flash
tWHWH1
tWP
SWITCHING WAVEFORMS
tCH
CE
tDF
tOE
OE
tOEH
WE
tCE
*
DQ7
tOH
DQ7=
Valid Data
DQ7
High Z
tWHWH 1 or 2
DQ0-DQ6=Invalid
DQ0-DQ6
DQ0-DQ6
Valid Data
20380B-18
Note:
*DQ7=Valid Data (The device has completed the Embedded operation).
Figure 11.
AC Waveforms for Data Polling During Embedded Algorithm Operations
CE
tOEH
WE
OE
*
Data
(DQ0-DQ7)
DQ6=Toggle
DQ6=
Stop Toggling
DQ6=Toggle
DQ0-DQ7
Valid
tOE
20380B-19
Note:
*DQ6 stops toggling (The device has completed the Embedded operation).
Figure 12.
28
AC Waveforms for Toggle Bit During Embedded Algorithm Operations
SWITCHING WAVEFORMS
CE
The rising edge of the last WE signal
WE
Entire programming
or erase operations
RY/BY
tBUSY
5.0 V-only Flash
Figure 13.
20380B-20
RY/BY Timing Diagram During Program/Erase Operations
RESET
tRP
tReady
20380B-21
Figure 14.
RESET Timing Diagram
29
SWITCHING WAVEFORMS
CE
OE
BYTE
tELFL
tELFH
DQ0-DQ14
Data Output
(DQ0-DQ14)
DQ15
Output
DQ15/A-1
Data Output
(DQ0-DQ7)
Address
Input
tFLQZ
20380B-22
Figure 15.
BYTE Timing Diagram for Read Operation
CE
The falling edge of the last WE signal

WE
BYTE
tSET
(tAS)
tHOLD (tAH)
20380B-23
Figure 16.
30
BYTE Timing Diagram for Write Operations
Start
RESET = VID
(Note 1)
Perform Erase or
Program Operations
Temporary Sector Group

Unprotect Completed
(Note 2)
20380B-24
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once again.
Figure 17.
Temporary Sector Unprotect Algorithm
5V
RESET
12 V
tVIDR
CE
WE
Program or Erase Command Sequence

RY/BY
20380B-25
Figure 18.
Temporary Sector Unprotect Timing Diagram
31
5.0 V-only Flash
RESET = VIH
AC CHARACTERISTICS
Write/Erase/Program Operations
Alternate CE Controlled Writes
Parameter Symbols
JEDEC
Standard Description
-65
-70
-90
-120
-150
Unit
tAVAV
tWC
Write Cycle Time (Note 2)
Min
60
70
90
120
150
ns
tAVEL
tAS
Address Setup Time
Min
ns
tELAX
tAH
Address Hold Time
Min
45
45
45
50
50
ns
tDVEH
tDS
Data Setup Time
Min
30
30
45
50
50
ns
tEHDX
tDH
Data Hold Time
Min
ns
tOES
Output Enable Setup Time
Min
ns
Read (Note 2)
Min
ns
tOEH
Output Enable
Hold Time
Toggle and Data

Polling (Note 2)
Min
10
10
10
10
10
ns
tGHEL
tGHEL
Read Recover Time Before Write
Min
ns
tWLEL
tWS
WE Setup Time
Min
ns
tEHWH
tWH
WE Hold Time
Min
ns
tELEH
tCP
CE Pulse Width
Min
35
35
45
50
50
ns
tEHEL
tCPH
CE Pulse Width High
Min
20
20
20
20
20
ns
Byte
Typ
tWHWH1
tWHWH1
Programming Operation
Word
Typ
14
14
14
14
14
Typ
1.0
1.0
1.0
1.0
1.0
sec
tWHWH2
tWHWH2
Sector Erase Operation (Note 1)

Max
sec
Max
20
20
30
30
30
ns
tFLQZ
BYTE Switching Low to Output High Z

(Note 2)
Notes:
1. This does not include the preprogramming time.
2. Not 100% tested.
32
SWITCHING WAVEFORMS
Data Polling
Addresses
PA
PA
5555H
tWC
tAH
tAS
WE
tGHEL
OE
tCP
tWS
5.0 V-only Flash
CE
tWHWH1
tCPH
tDH
Data
PD
A0H
DQ7
DOUT
tDS
5.0 Volt
20380B-26
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ7 is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
Figure 19.
Alternate CE Controlled Program Operation Timings
ERASE AND PROGRAMMING PERFORMANCE

Limits
Parameter
Typ (Note 1)
Max
Unit
Comments
Sector Erase Time
1.0
sec
Excludes 00H programming prior to erasure
Chip Erase Time
11
88
sec
Excludes 00H programming prior to erasure
Byte Programming Time
300 (Note 3)
Excludes system-level overhead (Note 4)
Word Programming Time
14
600
Chip Programming Time
3.6
10.8 (Notes 3, 5)
sec
Notes:
1. 25C, 5.0 V VCC, 100,000 cycles.
2. Although Embedded Algorithms allow for longer chip program and erase time, the actual time will be considerably less since
bytes program or erase significantly faster than the worst case byte.
3. Under worst case condition of 90C, 4.5 V VCC, 100,000 cycles.
4. System-level overhead is defined as the time required to execute the four bus cycle command necessary to program each
byte. In the preprogramming step of the Embedded Erase algorithm, all bytes are programmed to 00H before erasure.
5. The Embedded Algorithms allow for 2.5 ms byte program time. DQ5 = 1 only after a byte takes the theoretical maximum time
to program. A minimal number of bytes may require significantly more programming pulses than the typical byte. The majority
of the bytes will program within one or two pulses. This is demonstrated by the Typical and Maximum Programming Times
listed above.
33
LATCHUP CHARACTERISTICS
Input Voltage with respect to VSS on all I/O pins
VCC Current
Min
Max
1.0 V
VCC + 1.0 V
100 mA
+100 mA
Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.
TSOP PIN CAPACITANCE

Parameter
Symbol
Test Setup
Input Capacitance
VIN = 0
COUT
Output Capacitance
VOUT = 0
CIN2
Control Pin Capacitance
VIN = 0
CIN
Typ
Max
Unit
7.5
pF
8.5
12
pF
10
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25C, f = 1.0 MHz.
SO PIN CAPACITANCE
Parameter
Symbol
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VPP = 0
10
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25C, f = 1.0 MHz.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
150C
10
Years
125C
20
Years
Minimum Pattern Data Retention Time
34
REVISION SUMMARY
Erase Suspend:
Distinctive Characteristics:
Third paragraph, third sentence: Deleted the word NOT.
High Performance: The fastest speed option available

is now 60 ns.
Operating Ranges:
Enhanced power management for standby mode:

Changed typical standby current to 1A.
General Description:
First paragraph, first sentence should read, ...organized as 512 Kbytes of 8 bits each or 256 Kwords of 16
bits each. Added 60 ns speed option.
VCC Supply Voltages: Added -65 and deleted -75 speed

options in the list. Changed A9 maximum to +13.0 V.
DC Characteristics:
CMOS Compatible: Revised ICC specifications. Added

Note 4 (refers to ICC3).
AC Characteristics:
Read Only Operations Characteristics: Added the -65

column and test conditions.
Added -65 column (60 ns, 5% VCC). Added -70 (70 ns,
10% VCC) and deleted -75 speed option.
Replaced -75 column with -70 column.
Ordering Information, Standard Products:
Test Conditions, Figure 7:
The -65 speed option is now listed in the example.
Changed speed option in first CL statement from -75

to -65.
Valid Combinations: Added -65 and -70, and deleted 75 speed options.
AC Characteristics:
Corrected WE for read operations; was dont care (X),

is now H.
Write/Erase/Program Operations, Alternate CE Controlled Writes: Added the -65 column. Replaced -75
column with -70 column. Revised sector erase and
programming specifications.
Standby Mode:
Erase and Programming Performance:
Corrected standby mode current; was 100 A, is now

5 A.
Revised specifications in table. Clarified table and notes.
Table 5, Sector Address Tables (Am29F400AB):
Revised Note 5 to cover all upper address bits that are

dont care.
Tables 1 and 2, User Bus Operations:
Corrected x16 starting address for SA5; was 1C000h,

is now 28000h.
Table 7, Command Definitions
Deleted Note 6.
35
5.0 V-only Flash
Product Selector Guide:

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PRELIMINARY

Minimum 100,000 write/erase cycles guaranteed

Automatically programs and verifies data at

The standard Am29F400A offers access times of

Publication# 20380 Rev: B Amendment/0

5.0 V-only Flash

Embedded Program Algorithms

AMDs Flash technology combines years of Flash

Flexible Sector-Erase Architecture

This device also features a sector erase architecture.

AMD has implemented an Erase Suspend feature that

The Am29F400A device also features hardware sector

The Am29F400A also has a hardware RESET pin.

Am29F400AT Sector Architecture

Am29F400AB Sector Architecture

PRODUCT SELECTOR GUIDE

Ordering Part No:VCC = 5.0 V 5%

VCC = 5.0 V 10%

Max Access Time (ns)

CE (E) Access (ns)

OE (G) Access (ns)

5.0 V-only Flash

5.0 V-only Flash

A1, A0A17 = 18 Addresses

= Selects 8-bit or 16-bit mode

= Pin Not Connected Internally

= Hardware Reset Pin, Active Low

= +5.0 Volt Single-Power Supply

DQ0DQ15 = 16 Data Inputs/Outputs

5.0 V-only Flash

EC, EI, FC, FI, SC, SI

EC, EI, EE, EEB,

Am29F400A User Bus Operations (BYTE = VIH)

Autoselect, AMD Manuf. Code (Note 1)

Autoselect Device Code (Note 1)

Verify Sector Protect (Note 2)

Temporary Sector Unprotect

Am29F400A User Bus Operations (BYTE = VIL)

Autoselect, AMD Manuf. Code

Autoselect Device Code (Note 1)

Verify Sector Protect (Note 2)

Temporary Sector Unprotect

DQ0DQ7 DQ8DQ15 RESET

suming the addresses have been stable for at least

Am29F400A is erased or programmed in a system

With the OE input at a logic high level (VIH), output from

The autoselect mode allows the reading of a binary

The autoselect mode also facilitates the determination

The manufacturer and device codes may also be read

Am29F400A Sector Protection Verify Autoselect Codes

*Outputs 01H at protected sector addresses

Expanded Autoselect Code Table

A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z

5.0 V-only Flash

Byte 0 (A0 = VIL) represents the manufacturers code

Sector Address Tables (Am29F400AT)

Sector Address Tables (Am29F400AB)

Temporary Sector Unprotect

5.0 V-only Flash