STK0825F: DC-DC Converter Application High Voltage Switching Applications Features

STK0825F
Semiconductor
Advanced Power MOSFET
DC-DC CONVERTER APPLICATION

HIGH VOLTAGE SWITCHING APPLICATIONS
Features
High Voltage: BVDSS=250V(Min.)

Low Crss : Crss=13pF(Typ.)
Low gate charge : Qg=15nC(Typ.)
Low RDS(on) :RDS(on)=0.4(Max.)
Ordering Information
Type NO.
Marking
STK0825F
Package Code
STK0825
TO-220F-3L
Outline Dimensions
unit : mm
3.05~3.35
3.46 Typ.
9.10~9.30
2.60~3.00
1.07 Min.
0.90 Max.
0.60 Max.
2.54 Typ.
2.54 Typ.
0.60 Max.
4.70 Max.
2.70 Max.
12.20~12.60
12.40~13.00
15.40~15.80
9.80~10.20
KSD-T0O007-000
PIN Connections
1. Gate
2. Drain
3. Source
STK0825F
Absolute maximum ratings
(Tc=25C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
250
Gate-source voltage
VGSS
30
(Tc=25)
(Tc=100)
5.6
IDM
32
Drain power dissipation
PD
25
Drain current (DC)
ID
Drain current (Pulsed)
Avalanche current (Single)
IAS
Single pulsed avalanche energy
EAS
285
mJ
Avalanche current (Repetitive)
IAR
Repetitive avalanche energy
EAR
7.4
mJ
TJ
Tstg
150
-55~150
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Symbol
Typ.
Max
Junction-case
Rth(J-C)
5.0
Junction-ambient
Rth(J-a)
62.5
KSD-T0O007-000
Unit
/W
STK0825F
Electrical Characteristics
Characteristic
(Tc=25C)
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
BVDSS
ID=250A, VGS=0
250
Gate threshold voltage
VGS(th)
ID=250A, VDS= VGS
2.0
4.0
Drain-source cut-off current
IDSS
VDS=250V, VGS=0V
Gate leakage current
IGSS
VDS=0V, VGS=30V
100
nA
Drain-source on-resistance
RDS(ON)
VGS=10V, ID=4.0A
0.35
0.4
Forward transfer conductance
gfs
VDS=10V, ID=4.0A
4.2
510
770
76
120
13
20
15
85
90
65
15
23
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VGS=0V, VDS=25V,
f=1MHz
VDD=125V, ID=8A
RG=25
VDS=125V, VGS=10V
ID=8A
Source-Drain Diode Ratings and Characteristics

Characteristic
Symbol
Source current
IS
Test Condition
pF
ns
nC
(Tc=25C)
Min
Typ
Max
32
Unit
Source current(Plused)
ISM
Integral reverse diode

in the MOSFET
Forward voltage
VSD
VGS=0V, IS=8A
1.4
Reverse recovery time
trr
222
ns
Reverse recovery charge
Qrr
Is=8A, VGS=0,
diS/dt=100A/us
1.45
uC
Note ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=5.9mH, IAS=8A, VDD=50V, RG=27
Pulse Test : Pulse Width 300us, Duty cycle 2%
Essentially independent of operating temperature
KSD-T0O007-000
STK0825F
Electrical Characteristic Curves
Fig. 1 ID - VDS
Fig. 2 ID - VGS
Fig. 4 IS - VSD
Fig. 3 RDS(on) - ID
Fig. 6 VGS - QG
Fig. 5 Capacitance - VDS
KSD-T0O007-000
STK0825F
Fig. 7 VDSS - TJ
Fig. 8 RDS(on) - TJ
Fig. 10 Safe Operating Area
Fig. 9 ID - TC
KSD-T0O007-000
STK0825F
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T0O007-000
STK0825F
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
KSD-T0O007-000
STK0825F
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KSD-T0O007-000

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STK0825F

Advanced Power MOSFET

DC-DC CONVERTER APPLICATION

High Voltage: BVDSS=250V(Min.)

Drain power dissipation

Drain current (DC)

Drain current (Pulsed)

Avalanche current (Single)

Single pulsed avalanche energy

Avalanche current (Repetitive)

Repetitive avalanche energy

Drain-source breakdown voltage

Gate threshold voltage

ID=250A, VDS= VGS

Drain-source cut-off current

Gate leakage current

Forward transfer conductance

Reverse transfer capacitance

Turn-on delay time

Turn-off delay time

Total gate charge

Source-Drain Diode Ratings and Characteristics

Integral reverse diode

Reverse recovery time

Reverse recovery charge

Fig. 5 Capacitance - VDS

Fig. 10 Safe Operating Area

Fig. 12 Resistive Switching Test Circuit & Waveform

Fig. 13 EAS Test Circuit & Waveform

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