Mil HDBK 217F

MIL-HDBK-217F
BEF?1991
SUPERSEDING
MIL-HDBK-217E, NotIce 1
2 J8nwry 1990
MILITARY HANDBOOK
.
RELIABILITY PREDICTION OF
ELECTRONIC EQUIPMENT
AMSC N/A
DISTRIBUTION STATEMENT A: Approved for public release; distribution unlimited.
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Check the source to verify that this is the current version before use.
MIL-HDBK-217F
DEPARTMENT OF DEFENSE
WASHINGTON DC 20301
RELIABILllY PREDICTION OF ELECTRONIC EQUIPMENT
1. This standardization handbook was developed by the Department of Deferw

with the assistance of the military dep~ments, federal agencies, and industry.
2. Every effort has been made to reflect the latest information on reliability
prediction procedures. It is the intent to review this handbook periodically to
ensure its completeness and currency.
3. Beneficial comments (recommendations, additions, deletions) and any pertinent

data which may be of use in improving this dooument should be addressed to:
Commander, Rome Laboratory, AFSC, AlTN: ERSS, Griffiss Ak Force Base,
New York 13441-5700, by using the self-addressed Standardization Document
Improvement Proposal (DD Form 1426) appearing at the end of this document
or by letter.

....—
I
.
MIL-I+DBK-217F
CONTENTS
SECTION 1: SCOPE
1.1 Purpose .... .. .... ..... .. .. ... ... ....0...... .... .... .... . .... ....... ........ .. . ...... . .. .. .... .... ... ..... .. ... .... ....
● ● 1“1
1.2 Application .. ...... ...... .... ...*.. ......... .... .... ...... . ,, *........ ..........*. .....*...... .... ........ ..... .. ......
● 1-1
1.3 @rnputefized RdiabWty Predktbn .. .... .. .... ...... .. ....... .. .... .. .. .... .. .. ...... ... .. .... ..... ... ..... 1-1
SECTION 2: REFERENCE DOCUMENTS ● ... ... ....... .... .. ................... .. .. ... ... ... .... ... .... ... ..... 2“1
SECTION 3: INTRODUCTION
3.1 Reliability Engineering . ........ .. . . . . . . . . . . . . . . . . . . ...0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-1
3.2 The Role of Reliability Predktbn ...**.*.*..... ......... ................ ......... ................. ............. 3-1
3.3 Limitations of Reliability Predictions ..... *..*.*... ● . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ● . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-2
3.4 Part Stress Analysis Prediction ..... ........ ........ ...... . .. .... .. ..... ...... ... ... . ...0.. .... ... ... .... ....0 ● 3-2
SEHION 4: RELIABILIN ANALYSIS EVALUATION .....................*..*... ....................... 4-1
SECTION 5: MICROCIRCUJTS, INTRODUCTION .......**...**.....................0..... ................. ● 5-1

5.1 C3ate/Lo@cArrays and Microprocessors ...... ..................................*... .....*..... ............. 5-3
5.2 Memorfes ... ..... .... .... .... .... ...... .. . ...... .... .. .. .... ........ ...... ... .......... .... .. .... .... .. ..... .. .. ........ 5-4
5.3 VHSICNHSIC Like ... ........ ....... ........... ... ...... ........ .... ....... ....... .... .................... .......... 5-7
5.4 GaAs MMIC and D@ai Devioes . ........ .... .............. ... ...... ........ ..... ... ..... .. .... .. .... .. .. ....... 5-8
5.5 Hybrids . .. .. ............ .... ...... .... ... ...... .. ........ ........ .... ....... .......... .... ...... ........ ... .. .. ... ... .... 5-9
5.6 SAW Devices .... .......... .. .... .... .. ...... ... .... .... ..... . ... .... ...... ... .... .. ...... .... .. .. ... ...... ..........
● 5-10
5.7 Magnetic Bubble Memories ........ ............ .... .. ... .... .......... .... ...... ... .. ... ..... .. ...... .. .. .. ..... 5-11
5.8 XT Table for All .......... ............ ...... ...... ............ ...... ................... ........ ...... ............ ....... 5-13
5.9 C2 Table for AIl . ....... .... .... ........ .... ....... .. ...... .. .... .............. ... .. .... ... ..... .. .......... ........... 5-14
5.10 %EsXL and fiQ Tabk= for ~i ..... ........ .... .... .... ... .. .. ........ ...... ... ....... ....... ........ .. .. ...... ... 5-15
5.11 TJ Determination, (All Except Hybrids) ...................................*... ............* .................. 5-17
5.12 TJ Determination, (For Hybriis) ........... ......... ........................................... ....... ......... ● 5-18
5.13 Examples .... ........ ........ .. .. ................... .. ........ .... .. .... ..... .... .......... ...... .... .... ... ...... .... .. 5-20
SECTION 6: DISCRETE SEMICONDUCTORS

6.0 Discrete Semiconductors, Introduction ....... ........... ....... ......... .... .. ... ..... .. ... .... ... ..... ... 6-1
6.1 Diodes, Low F~ency ..... ........ .... .. .......... . .. .. ........ ...... ....... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-2
6.2 Dbdes, High Frequency (Microwave, RF) .... .......... .... .. ........ ..... ........ .... ....... .. ..... ...... 6-4
6.3 Transistors, LOW Frequency, Bifx)lar ... .... .... ....... ... .... ..... .... ...... .... .. .... ..... ........ ... ... ... 6-6
6.4 Transistor, Low Frequency, Si FET ..... ............... ............................................... ...*.. 6-8
6.5 Transistors, Unijmction ..........00....................... .............. ....... ........ .......... ........... ... ... 6-9
6.6 Transistors, Low Noise, High Frequency, Bipolar . ..... ..... .... ...... ... ... ... .... .. ..... .. .. ........ . 6-10
6.7 Transistors, High Power, High Frequency, Bipolar .....................* ..........* .............. ... ... 6-12
6.8 Transistors, High Frequency, GaAs FET .. .. ..... .............0.... .. .... .... ... ... .... ....... .. ........... 6-14
6.9 Transistors, Hgh Frequency, Si FET ....... ....* ... .. ..... ... ... ...... .... ...... .. .... . .... ...... .... .... ... 6-16
6.10 ~ end SCRS . ... .... ........ ........ .... .. ........... .... ...... ........ . ... .. .... .. .... .. .... ...... .. . .... ● 6-17
6.11 Optoelectronics, Detectors, Isolators, Emitters ........ ........ .. ... .. .......... .. .... .... ... .. .... ..... 6-19
6.12 Optoeiectmnios, Alphanumeric Displays ... .... .. .... ................. .. .... ...... .... ... .... ... ..... .. ... 6-20
6.13 OploekWonios, Laser Diode ................. ......* ...... .. ............ .... .... ... ...... .. ..*...... . .... ... .. 6-21
6.14 TJ Determination ..... .. .... .... .... ............ ... .... .... ...... .. ...... .. .... ..... .... ...... .... .... ..... .. .... .... 6-23
6.15 Example . ..... .... .. ........ ... .... ......... ............... .... ...... .. .................... .. .... ....... .. .... .. ......... 6-25
...
HI

MIL-HDBK-217F
CONTENTS —
SECTION 7: TUBES
7.1 All Types Except TM/T and Magnetron ........ ....................................................... ....... 7-1
7.2 Traveli~ Wave . ....... .... ...... .... ........... ...... .. ...... .. ........ .... ......... .............. .. ...... ........... 7-3
7.3 Magnetron .. .. .......... .... .... .. ........ ... .......... .. .... ...*..... ...... .......... .. .... .......... ..... .........0.. 7-4
SECTION 0: LASERS
8.0 Introduction ... .................... ..... .... .. .... ...... .. ...... .... ......... .......... .. .. ............. .... ...... .. .... 8-1
8.1 Helium and Argon . .......... ... .......... .... ..... .... ... ..... .. ...........** . ... .... .... .... .... ...............* . .. 8-2
8.2 Catin Dmxide, Sealed . .... .. ............ .. ....... ... ... .... ...... .. ...... .. .. ... ........ ...... .. ...... ....... .. 8-3
8.3 Carbon Dioxide, Fbwing .... .. ...... .... ........ .... ... .... .. .... ...... .... ....... ........ ...... ........ ......... 8-4
8.4 SoIii State, ND:YAG and Ruby Rod .... .... .... .... ... ............ .. ............ .. .. .. ..... .... ...... .... ... 8-5
SECTION 9: RESISTORS
9.0 Introduction .... ... ... ....... ............ ... .. ........ .... ... ... ................... .. .. ........ .... ......... ...... .. .. .. 9-1
9.1 Fixed, Composition (RCR, RC) ................................. ............................... ................. 9-2
9.2 I%@, Fitm (RLR, RL, RN (R.C, or N). RN) . ............................ . ....... .... .................... .... 9-3
9.3 Fixed, Fltrn, Power (fWI) ........ ........ ...... ........ ... .. .. .......... .. ................... ............ ........... 9-5
9.4 Network, Fixed, Film (RZ) .. ........... ............. ............. .............. .................... ................ 9-6
9.5 Fixed, Wirewound (RBR, RB) ... ......... ................... ............................ .................. ...... 9-7
9.6 Fixed, Wkewound, Power (RWR, RW) ......... ...... .... .. .... ... .......... .. ........ .. ........... ...... ... 9-8
9.7 Fixed, Wirewound, Power, Chassis Mounted (RER, RE) ............................................ 9-1o
9.8 Thermistor (RTH) .......... ..... ........ .... ..... .... ...... .. .. .... .... ..... .... .... ........ .. ............ ... .. .. .... 9-12
9.9 Variable, Wirewound (RTR, RT) ......... ................................................................. ...... 9“13
9.10 Variable, Wkewound, Precision (RR) ......... ....... ... ....... .......... .... .... ..... ................. ...... 9-15
9.11 Variable, W/rewound, Semiprecision (RA, RK) . .... ................ ....... ................... ..... ..... . 9-17
9.12 Variable, Wkewound, Power (RP) . .......... .. ...... .. .. ..... .......... .... .... ....... .... ........ ..... ...... 9-19
9.13 Variable, Nonwirewund (RJ, RJR) ................................ ........................................... 9-21
9.14 Variable, Composttlon (RV) ...................*.. ........ ................................ ...... .. ................ 9-23
9.15 Variabte, NOnwmwu nd, Fitmw’KI Prectsion (RQ, RVC) ... .... ........ ....... .. .... ................ 9-25
9.16 Cakulation of Stress Rat& for Potent&meters . .... ........ .... .... ..... .... .... .. .. .... ..... ........ ... 9-27
9.17 Example . .. ..... .. ...... ....... ...... .... ..... ...... .... ... .. .. ............. .... .... ... .... .. ................... ......... 9-29
SECTION 10: CAPACITORS

10.1 Fixed, Paper, By-Pass (CP, CA) .. .... .... ...... ...... .. .. ... .... .... .......... ....... .............. ........ ... 1o-1
10.2 Fixed, Feed-Through (CZR, CZ) . ........ ...... ........ .. ....... ...... .... .... ......... .. ...... .... .... .... ... 10-3
10.3 Fixed, Paper and Plastic Fitrn (CPV, CQR and CQ) ..................................................... 10-5
10.4 Fixed, Metallized Pqw, Paper-Plastic and Plastic (CH, CAR) .. ...... .. .... ... ............... .... . 10-7
10.5 F&ed, Plastic and Metallized Plastic .............................................. ............................ 10-9
10.6 Fixed, Super-Metallized Plastic (CRH) ........ ....... ..................... .... ........ ....... ...... .... ..... 10-11
10.7 F&ed, MICA (CM, CMR) ........ .. .. .... .............. ... .. .. .. .. ...... ........ ............. ...... .. ...... .... ..... 10-12
10.8 Fixed, MICA, Button (CB) ..... .. ....* . .... .......... .. ... .... .... .... .......... ..... .. ..... ..... .... .... .... .. ... 10-14
10.9 Fued, GJass (CY, CYR) ......... ........ ............. ....... ... ...... ............ ..... .. .. .... .... .. .. .... .... ..... 10-16
10.10 Fixed, Ceramic, General Purpose (CK, CKR) ............................................................. 10-18
10.11 Fixed, Cerarnk, Tenpemtum ~ . and Chip (CCR and CC, CDR) . ...... ........ . 10-20
10.12 Fixed, Electrolytic, Tantalum, Solid (CSR) ........ .... .... .... .... ............. .... ....... .. .. ........ .. ... 10-21
10.13 Fixed, Electrolytic, Tantalum, Non-Solid (CL, CLR) ... .... .... .... ..... ........ ... ......... ..... .... ... 10-22
10.14 Fbd, Ektrotytic, Aluminum (CUR and CU) .... .. ...... .... .. .... ... .... .... .. .. .. .. ..... .... ...... .... . 10-24
10.15 Fixed, Electrolytic (Dfy), Aluminum (CE) ...................................... .............................. 10-26
10.16 Variable, Ceramic (CV) .. .......... ............ ............. ........................ ................................ 10-27
10.17 Variable, Pkton Type (PC) ........ ......... ......... ......... ......... ................... ........................ 10-28
10.18 Varitie. ArTfimmr (C~ ............. ...... ........ .. ........... ...... ...... ....... ... ..... .... ........ ...... ... 10-29
10.19 Variable and Rxd. Gasor V.um(CG) .. .... .. ..... ......... ... ...... ........ .... ... .... ......... ...... .. 10-30
10.20 Example ... ..... ........ .. ............ ... ........... .. .. ..... .... .. ..... .... .... ........... .... ..... .... ........ ..... .. .. 10-32
iv

——
MIL-HDBK-217F
CONTENTS
SECTION 11: INDUCTIVE DEVICES

11.1 Transformers ........... .... .... .......... .. .... ..... .... .... ... ... ...... .... ....... .... .. .. .... ...... .. ..... .... .... .. 11-1
11.2 cob .... .....*.. .............................................................................*...... ..................... 11-3
11.3 Determination of Hot Spot Temperature ............................................................0...0.. 11-5
SECTION 12: ROTATING DEVICES

12.1 Motors . . .... ........ .... .....* .. ........ .. .......... ......... .... ...... .. .. .... .............. ..... ........ .............
●
12-1
12.2 Synchros and Resolvers .............. .... ........ ..... .. ...... .... .... ........... ... ....... .. ............ ... .... 12-3
12.3 EIapsed Time Meters . .. .. .... ............*.. .. ........ .... ... ..... .... .... ............ ....... .. .. .... ........ ... .. 124
12.4 Example ... ...... .. ... .. .. ..... ........ ......... ........... .. .... .. ..... .... ........... ...... .. .. ... .. .......... ..... .... 12-5
I
I SECTION 13: RELAYS
13.1 Mechanbl ......................................0.. ......................... ...................................0.....
● ● 13-1
13.2 Solid State and Time Delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...*..... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..0...... 13-3
(
I SECTION 14: SWITCHES

14.1 Toggle or Pushbutton ............ ..... ...... ...... ........ .... .............. .......... .. ... ... ............ ........ 14-1
34.2 Basic sensitive .. .... ...... .. .. .......... .. .. ... ...... .... .. .... ...... .... .... ....... ............ ........ .. .. ... .... .. 14-2
14.3 Rotary .. ... .......... ...... ... .... ...... .. .......... .... ...... ... ...... .. .... ........ .... .... .. ..... ....... ... .... .... ... 14-3
14.4 Thumbwheel ... .. ....... ....... ...... ....... .... ........ .... ........ .. .... ........... ...... ...... ....... ... ..... .... .. 14-4
14.5 Circuit Breakers . ........ ........ .... .... ...... ........... .... .. ... ....... .... ....... .... .. .. .... .... ........ ..... .... 14-5
SECTION 15: CONNECTORS

15.1 General (Except Printed Cir@t Board) .......... .... .... ...... ... .. ...... .... ... ..... ... .... .... .... ....... 15-1
15.2 Printed Circuit Board . ... ........ .... .... ...... .... ... .... .... .. .. .. .. ........... ...... .. ...... ...... .. .. ....... .... 15-4
15.3 Integrated CituJlt Sockets .. ...... .......... ...... .. ... .......... .... .... .. ...... ... .. .. .............. .... .... ... 15-6
SECTION 16: lNTERCONNECTtON ASSEMBLIES

16.1 lntemomectkm Assenb+ies with Ptated Through t-totes . .. ....... ....... ... .... .... ........ ....... . 16-1
SECTION 17: CONNECTIONS

17.1 Connections .......................................................................................................... 17-1
SECTION 18: METERS

18.1 Meters, Panel .... ...... .. .... .. .. ................... .... ...... .... ...... .... ... .... ........ ........ .... .... ... .... .... 18-1
SECTION 19: QUARTZ CRYSTALS

19.1 Quartz Crystals....................................................................................................... 19-1
SECTION 20: LAMPS

20.1 hmp .. ... .. .. .... ...... .... . ...... ...... .... ........ .. .... .. ....... ... ... .... .... .... .... .. .. . .. .... ........ .. .. ....... 20-1
SECTION 21: ELECTRONIC FILTERS

21.1 Eiectmrtb Fitters, NorwTunabte................................................................................ 21-1
SECTION 22: FUSES

22.1 Fuses . . . ....0.... .. .. ....... ........ .... .......... .... ............ ... .. .... .. .. .... .... ....... .. ..... ... .. .. .. .........
● 22-1
SECTION 23: MISCELLANEOUS PARTS

23.1 Miscellaneous Patis ....... ..... ......... .. .... ... .... .... .... .......... ....... .... ........ .. .... ........ .. ....... .. 23-1
APPENDIX A: PARTS COUNT RELIABILITY PREDICTION . ...... .... .. ..... . ..... . .. .. .. .. ... ... .. . A-1
APPENDIX B: VHSIC/VtiSIC-LIKE AND VLSI CMOS (DETAILED MODEL) ... .. .. ... ... . B-1
APPENDIX C: BIBLIOGRAPHY . ......... .... .......... .... ... ...... .... .... .. .... ....... ...... ........ ............ ... .. c-1

MIL-HDBK-217F
CONTENTS —
LIST OF TABLES
Table 3-1: Parts with Multi-Level Quality Spedfications .............................. .......................... 3-3
Table 3-2: Environmental Symbol and Desdptiin .............................................................. 3-4
Table 4-1: Reliability Analysis Cbckfist ...... ............... ... .. .......... .... ........ ..... ........ .. .......... .... .
Table &l: Default Case Temperatures for All Environments (~) ..... .. .... ....... ................. ....... 6:2;
Table S2: Approximate Thermal Resistance for SernbncWtor Devices
in Various Package Sizes ..... .... ..... ............. .... ........ .... ........ ... ............ .... ...... ... . 6-24
LIST OF FIGURES
Figure 5-1: Cross Sectbnal Vk!w of a Hybrid with a Single Multi-Layered Substmte ......... ... .. .. 5-18
Figure 8-1: Examples of Active O@cal Surfaces ....... ........ ...... ... .... .... ... ..... .. ............. .... .... ... 8-1
Figure 9-1: MIL-R-39008 Deratinfj cum ... .. ............. ........................... ... ................. ... .. ... .. . 9-1
vi

MIL-HDBK-217F
FOREWORD
This revision to MIL-HDBK-217 provides the following changes based upon recently completed studies
(see Ref. 30 and 32 listed in Appendix C):
1. New failure rate prediction models are prov-kled for the following nine major classes of
microcircuits:
●
MonoliihE B~lar Dqital and Linear Gate/lm@c Array Devioes
● Monolithic MOS Digital and Lmar Gate/Logic Amy Devfces
●
Monolithic B@olar and MOS Digital Microprocessor Devkes (Including Controllers)
●
Monolithic Blpotar and MOS Memory Devices
●
Monolithk (W@ Di@tal Devices
●
Monolithic GaAs MMIC Devices
●
Hybrid Microcircuits
●
Magnetic Bubble Memories
● Surface Acoustic Wave Devices
This revision provides new prediction models for bipolar and MOS microcircuits with gate counts up to
60,000, linear microcircuits with up to 3000 transistors, bipolar and MOS digital microprocessor and co-
processor up to 32 bits, memory devices with up to 1 nlftion bits, GaAs monolithic microwave integrated
circuits (MMICS) with up to 1,000 active elements, and GaAs digital ICS with up to 10,000 transistors. The
Cl factors have been extensively revised to reflect new technology devices with improved reliability,and
the activation energies representing the temperature sensitivity of the dice (nT) have been changed for
MOS devices and for memories. The C2 factor remains unchanged fmm the previous Handbook version,
but includes pin grfd arrays and surface mount packages using the same model as hermetic, solder-sealed
dual in-line packages. New values have been included for the quality factor (~), the learning factor (~),
and the environmental factor (@. The rrwfel for hybrid microcircuits has been revised to be simpler to
use, to delete the terrperature dependence of the seal and interconnect failure rate contributions, and to
provide a method of oakulating ohp jundon temperatures.
2. A new model for Very High Speed Integrated Circuits (V1-fSIC/VHSIC Like) and Very Large
Scale Integration (VLSI) devices (gate counts above 60,000).
3. The reformatting of the entire handbook to make H easier to use.
4. A reduction in the number of environmental fado~ (~E) from 27 to 14.
5. A revised failure rate model for Network Resistors.
6. Revised models for Ms and Ktystrons based on data supplied by the Electronic Industries
Association Microwave Tube DiWon.
vii

-- . ...=-------- - —---- --u. I -- 1 -u I
MIL-HDBK-217F
1.0 SCOPE
Purpoee - The purpose of thfs MruboOk is to establish and maintain consistent and uniform
ti.~ for estimating the hhemnt rek&Slity (i.e., the reUabflityof a mature design) of rnilbry @edron&
~~~ - systems. It provides a common basfs for ~ predictionsckhg aoquis&bn progmms
for military ebctrcmc systems and equipment. h atso establishes a common basis for oomparfng and
evafuatlng reliability predictions of rdated or competitive destgns. The handbook is intended to be used
as a tool to increase the reliabil”~ of the equ@merx being designed.
1.2 Appllcatlon - This handtmok oontains two methods of reMWiJity pmdiotbn - “Part Stress
Analysis” In Sectfons 5 through 23 amf 7%rts Count- in Appendix IL These methods vary in degree of
informatbn needed to apply them. lhe Part Stress Anafysii Method recpires a greater amount of detailed
In&mtfon and ts appfkabfe mrfng the later design phase when actual hardware and c&wits are being
designed. The Parts Count Method raquires less infonnatbn, generally part quantities, qmtity level, and
the applkatbn environmen& This method Is appfioable cMng the early de- @ase and du~ pmpo@
formulation. In general, the Parts Count Metfwd wffl usually result in a more conservative estknate (i.e.,
~f*mte)ofsy’stem r@taMtythanthe Parts Stress Method.
1.3 Computerfzad Rellablllty PmcffctlOn - Rome Laborato~ - ORACLE is a computer program

developed to aid in appfying the part stress analysis procedure of MIL-HDBK-217. Based on
environmental use chamcteristks, piece part oount, thermal and electrical stresses, subsystem repair rates
and system configuration, the program calculates piece part, assemMy and subassembly failure rates. It
also flags overstressed parts, afbws the user to perform tradeoff analyses and provides system mean-
time-to-failure and availability. The ORACLE computer program software (available in both VAX and IBM
co~atible PC versbns) is available at replacement tape/disc cost to all DoD organizations, and to
contractors for applbcatbn on spedfk DoD contraots as government furnished property (GFP). A
statement of terms and conditions may be obtained upon written request to: Rome Laborato~/ERSR,
Grtffiss AFB, NY 13441-5700.
f-l
I
,..
..
-,
..-”, .-
MIL-tiDBK-217F
2.0 REFE!?ENCE DOCUMENTS
~s~cites somespecificatbns which have beencanoslle dofwhiohdescrb ectevicesthatam

nottobeused fornewdes@n. lWiinfomatti&s Wms$arytmcxames omeofthesed evicasarusecfin
soalfed %ff-th~ eqdpment which the Depwtment of Defense purchases. The documents cited
m this section are for @dance and information.
SPECIFICATION SECTION #
MIL-C-5 10.7 Ca@&s, FMed,Mii-Dieisctric, General Specifii for
MIL%l 1 9.1 ~, F&a composition (Insufated) General $pecuii for
MlL-R-l 9 9.11 Resiekx. Variab&gWirewound (Low Operating Tmpwatum) General

Spo&@atbn for
MIL-G20 10.11 @Pw@%=d~ ~“ v@fw=- ~)

Estdfkhed and Nonestabiished Reliability, General Specifiiion for
MIL-R-22 9.12 Rask!or, Wuewow Power Type, General Spa&cation for
MIL-C-25 10.1 ~. fiti p~r~~~ Dire Cwrent (Hermetically Sealed

in Metal Case@, General Specification for
MIL-R-26 9.6 Resistor, Fued, Wkewound (Power Type), Genarai Specifhbn for
MIL-T-27 11.1 Tmnsfonner and fndwtor (Audio, Power, High Power, High Power
Pulse). General Sfxdiibn for
ML-(X2 10.15 ~r. Fiu~ ~fo~~ (DG fgruminum.W E~@,

Pdar&ed), Gened spadkamn
MIL-G81 10.16 Capacitor, Variable, Ceramic Dielectric (Trimmer). General Specification

for
MIL-92 10.18 Ctpcitor, Variable, Air Dielectric (Trimmer), General Specificaii for
MIL-R-93 9.5 Resistor, Fwed, Wkewound (Aocura!e), General Spdfkdon for
MIL-R-94 9.14 Resistor, Variable, Composition, General Specifiin for
MIL-V-9S 23.1 Vior, Interrupter and Self -RectifyingO General Specification for
W-L-1 11 20.1 -. hadaant Miniature, Tungaran Fikment
W= 14.5 Ckauit Br@der, MOidOdC&m, BrarmflcfrcuRand~
W-F-1726 22.1 Fuse, Q@ridge, CJassH (Thii mvem renewable and mrwnebie)
w-f-i814 22.1 Fuse, Camidge, High Interrupting

Cqmcity
MfL-G3098 19.1 _ Unk ~ ~~end Spcifiw&m for
MIL-G3807 15.1 Connector,Coax&~Radii Frequency, Series Pulse, Gene@
,
SpdMlOns for
MIL-G3643 15.1 Connector, Coaxial, Radio Frequency, Series NH, Associated Ftiings,
~neral s~ for
MlL4N8so 15.1 Connector, Coaxial, Radio Frequency, Series LC

I Luw u I
MIL-HDBK-217F
.
2.0 REFERENCE DOCUMENTS
SPECFKATJON SECTION #
. Mt4X655 15.1 conneotor, P&q and Ramptda, _(Jl=SeriasTwin)and

Associated Fitlmgs, General SpuM@mn
.
ML-C-3767 15.1 ~. f’q ~ ~ (po”~* B&~ TYP@ -~~
SpacMiion for
MIL-S-3786 14.3 S*. Rotary (Circxit Selector, Low-Current (Capady)), General

~bn for
MfL-G3950 14.1 =. Toggle, Envlmnmantally sealed, General Speckatbn for
MIL-G3965 10.13 =b~~~ Elti~ (No-lkf Electrolyte), Tantalum, General
MIL+5015 15.1 ~, Eledrkal, Circular Threaded, AN Type, General

Spedflcation for
MIL-F-5372 22.1 I%aa, Currati Limiter Type, Amaft
MIL-R-5757 13.1 Relay. Electrbl (For Electronic and Communkation Type Equipment),
General Specifbaticm for
MIL-R-6106 13.1 Relay, Electromagnetic (Including Established Reliability(ER) Typs),

~-~s~ for
MIL-L-6363 20.1 bnp, Incandemt, Aviation Service, General Raquirament for
MIL-S-8805 14.1, 14.2 SwhcheS and Switch Assemblies, Swxdtivo and Push, (SW Action)
General Sfx@in for
MIL-S-8834 14.1 Switches, Toggle, Positive Brealq General Specification for
MlL-M-l 0304 18.1 Meter, Electkal Indicating, Panel Type, Ruggedzed, General
Spedficatbn for
MlL-R-l 0509 9.2 Resistor, f%cad IWm (High Stability). General Speoikatbn for
MIL-C-1095O 10.8 -Or, Fud, Mii Dielectric, Button Style, General Specifiiion
for
MIL-C-1101S 10.10 ~, FU~, Ceramic Dtiric (General Pupae), Ganeral

~bn for
M!L-GI 1272 10.9 Capadtor, Fixed, Glass Dlelectrb, General Spcfkatbn for -
MlL-C-l 1693 10.2 Capadtor, Feed Through. Radio Interference Reduction AC

. andDC,
Sdedh Metal Casos)Eatabkhed and No~ “ hed
l!!’!!’
MaMfiio General Spdicatbn for
MlL-R-l 1804 9.3 Resistor, Freed, Film (Power Type), General Specifiin for
MIL-G12889 10.1 “Cap&or, By-Pa&: Radio - Interfermce Reduction, Paper Dielectdc,

AC d DC, (Hermetbally Sealed in Metallk Casas), Ganeral
Spectficatbn for
MIL-R-12934 9.10 Resistor, Variable, Wirewound, Preasion, General Specification for
2-2
r- . . . –n / nv -1 [1-/!1
, --- --–
.uu l-- ,-- -------- —. n . ——. ba -
MIL-HDBK-217F
sPEcfFlcATloN SECTKMJ #
ML-C-141S7 10s ~, -d: a (pap- PI-tic) or mastic Dweot* Direct

current (Hermabd lySeabdin Matal Cases) amMshed Refkwty,
@J-~ ~n for
MIL-G14409 10.17 ~. v- (Pii TyP, T“lar Trimmer), GWWraI
Spac#ioatbn for
MIL-F-15160 22.1 Fuse, Instmnem Poww amf Telephone
MK-C-IS305 11.2 Coil, Fixed and Vari*, Radio Frequency, General Specifiibn for
MfL-F-15733 21.1 FBtler,Rack Imarkmrux, General SpecMin for
UL-GW312 10.4 ~. -, Metzdl&ed (Paper, Paper Plastic or Plastic Film)

Dbbdrk, Dkocl Cummt (Herrneticaliy sealed in Metal Cases), Gemral
~ibn for
ML-F-13327 21.1 Filter, High Pass, k Pass, Band Pass, Band Suppression and Dual
Funcknkg, General Specdfiition for
MIL-R-16546 9.7 Redstor, Freed, WWewound(Power Type, Chassis Mounted), General

Specificatbn for
MIN-19500 6.0 SomkOnductor Oevice, Geneml Specification for
MIL-R-19523 13.1 Relay, Contmi, Naval Ship&oard
ML-R-19M8 13.1 Roley, Tree, Delay, lherm~ General Specifiition for
ML-C-19978 10.3 ~or, Fmecf Plastic (or Paper-Plastic) Dielectric (Hermetically

Sealed m Metal, Cemmc or Glass Cases), EstafXished and
Noneatabiiahed ReGabilii, General Specifiicatbn for
MIL-T-21036 11.1 Transformer, Pulse, Low Power, General Specikatiin for
MUA-21097 15.2 Connector, Electrical, Printed WInng Board, General Purpose, General
Spedfbatbn for
MIL-FM2097 9.13 Rasistor, VarMMe, Nonwirewound (AdjustmentTypes), General

Spedfbatbn for
MIL-R-Z?664 9.2 Resistor, F&d, Film, lnsdated, General Specifiiion for
MIL-S-2271O 14.4 S*. Mary (Printed Circuit), (Tlwmbwheel. In-1ine and Pushbutton),
-nerd ~*
ML-S-22665 14.1 Switches, Pushbutton, Illuminated, General Specification for
MIL-C-22W2 1s.1 Connector, Cyfinddcal, Heavy Outy, General Specification for
ML+163 10.19 = ~~ ofi,v*. V=xum MI-* General Specifiibn
M&GZ3269 10.9 em. Fi~. G- Diekrik Estiiiihed Reliabllky, General

Speclkatbn for
MIL-FW3265 9.1s Reaiir, Variable, Nonwirewound, General Specificationfor
2-3

..
MIL-HDBK-217F
SPECfFICATlON sEcTKm #
MIL-F-23419 22.1 Fuse, bstrumont Type, Gonad ~km for
MIL-T-23648 9.8 Thormistw, (Tharmafly Sensitive Resistor), Insulated, Generaf

Spadfioatbn for
MfL-G24308 15.1 Connec40r, E- Rectangular, Miniature Polatizad Shell, Rack and

Panel. Genoraf Spodcatbn for
MIL-G25516 15.1 Cortnector, ~ , Miniature, ~ Environment Resistant Type.
-~~fof
MfL&+6482 15.1 Cormoctor, Efoctr&f (Circular. Minirdure, QuH kamnoc&

Environment Rl&ting) ReU@ac& and Plugs, General Spocik@ion
for
MN-R-27208 9.9 Resistor, VariaM, WKewound, (Lead Screw Actiied) General

Speciftiion for
MIL-C-2f1748 15.1 Con-or, Ebct~ Rectangular, Ra& and Panel, solder Type and
Crimp Type Contads, General Spacifiition for
MIL-R-28750 13.2 Relay, Solid State, Ganeral Specification for
MfL-G288tM 15.1 Connector. E&ctric Rectangular, High Density, PoMzed Cantral

Ja&euww, Genoraf Spedficstion for, Inactive for New Designs
MIL-C-2884O 15.1 Conrmdor, ~ cimUlar Threaded, High Denaity, High Shock

Shipboard, Class D, General Spechation for
MIL-hR851 O 5.0 M&oc5rcuits, Generaf Specificatii for
MIL-H-38S34 5.0 Hybrid Microcircuits, General Specification for
MIL-I-38535 5.0 Integrated Circuits (Microcircuits) Manufacturing, General

Speclfiiion for
MIL-C-38999 15.1 Qxvwc#or, E~ Chcular, Miniature, Hgh Density, Quick

Disconnect, (Bayonet, Threadad, and Breech Coupiing) Environment
Resistant Remowble Crimp and Hermetic Solder Cmtacts, General
Specifiiion for
MfL-C-39001 10.7 qor. ~~, Mh Dkktk Estabkhed ReliaMfity, Generat

Specification for
MIL-R-39002 9.11 Raa&stor, Variable, Wkewound, Sem&Precision, General Spa&icstion

for
MfL—G39003 10.12
-’ ‘a_~&*ewg ●
T-lJm*
MIL-R~ 9.5 Raslatcx, Fixed, ~nd, (Aaamte) EstaMshed Fteflabllity, General

Specification for ‘
MtL+39006 10.13 -N. ~~. -I& (NortsoMf Ek%rolyte) Tantalum

EstalMshed Relilii, General SpadkMon for
MfL-Raoo7 9.6 Resistor, Fixed, W~ nd (Power Type) EstaMished Reliability.

.
General Speckition for - “- -

.-. . .. . .. ..
MIL-HDBK-217F
SPEOFICATR3N SECTION #
MIL-R~ 9.1 Redstor, Fixed, Campoah“ n, (Insutated) Established Reliability,

Genefal S@fio@hfor
9.7 R@!sMcw,m ~nd (Power Type, chassis Mounted) ~

EstaMished R@aMfity, General SpecMcMion for
MLC-3901O 11.2 Cd, Fbrti Radio Frequency, Molded. Established Ratiiity, General
Spec#iibn for
MIL-CX9012 15.1 Connector, Coaxial, Racfb Frequency, General Spdfii”~ for
UL-C39014 10.10 ~. ~ Carandc Dielectric (General purpose) EsMMbhd

R8iiabili!y, Gmeral SpeoWation for
MK-C49015 9.9 Rdetor, V*, WkewOund (Lead screw Actuated) Emabfished

Reliability, General Spdfkatbn for
MIL-R39016 13.1 Relay, Electromagnetic, Established ReIiabilii, General Specifiition

for
MtL-R-39017 9.2 Resietor, Freed, Fh (insulated), Estabkhed Reliabitky, General

Specifiikm for
MIL-G39018 10.14 Capacitor. f%ed, Ebctmlytio (Aluminum Oxide) Established Reliabil.~

and Nonestablished ReKaMIity, General SpecdfbNion for
MIL-C-39019 14.5 Cfrcutt Breakera, Magn@iq Low Power, Sealed, Trip%ee, General
~bn for
MIL-G39022 10.4 ~r, ~d. Mettiized Paper, Paper-Plastic Film, or Plastic Film
Dielectric, Direct and Alternating Current (Hermetically Sealed m Metal
Caaas) Estabfbhed Reliability, General Specification for
MIL-R-39023 9.15 Resistor, Varkble, Nonwirewound, Precision, General Specification for
MIL-R-39035 9.13 Resistor, Variable,Nonwhwound, (Adjustment Type) Established

Reliability, General Spedkttbn for
MiL-G49142 15.1 Conne@or, Triaxial, RF, General Specification for
MIL-P-5511O 152 PrintedWdng Boards

MIL-R-65W2 9.2 Resbtor,F~~EstddWd Reliabilii, General Specification for
MIL-G55235 15.1 Connector. Coaxial, RF, General Specif”=tion for
MIL-G55302 15.2 Connector, Printed Circuit, Subassembly and Accessories
MIL—G65339 15.1 Adapter, CoaJC~ RF, General SpeMc8tbn for
MIL-G65514 10.5 qor. ~~, ,~k (CWM@tdfizd Plastic) Dielectric, Direct

Current In Non-Metal Cases, General Spedfii”bn for
MIL-C-5S629 14.5 Circuit Breaker, Magnetic, Unsealed, Trip-Free, General Specification

for
MIL-T-S5631 11.1 Transformer, Intormdiato Ftewemx, Radio Frequency, and

Discriminator, General Specific&lon”for . -

MIL-HDBK-2 17F
SPECIFICATION SECTION#
ML-C-55681 10.11 ~r, Chip. M@t@lebayer, Freed, Ceramic Diekct~ Established

Rewility, General Sp&iGat”m for
MlL~1511 15.1 Conne, Ekc&icaf, Circular, High Demity, Quiok Dmnect,

Envhonment Resisting, and Acc=swies, General SpecHMh for
MIL-(X3383 14.5 Circ@i6reaker, Remote ~ntrol, Thermaf, TripFree. General

SpecMiion for
MtL-R-S3401 9.4 Resbtor Notwodq Fixu!, Fti. Ganwal Spdkabn for
MiL-G83421 10.6 ~r, f%cf Supennetallizodf%stb f% DiskcMc(DC, ACor DC

and AC) Hmwtb#y Soalecf in Metal Cases, ~bhed Refiabiiity,
ud~~
MIL-C-83513 15.1 Cwmecbr, EkcZrical, Rectangular, Mbrominiaturo, Polarized Shell.

Garbefal Specification for
ML-C-83723 15.1 Connedor, Ebctricd (Circular Environment Resisting), Receptacles

and Plugs, GeneraJ Speclficatbn for
MIL-R=72s 13.1 Relay, Vacuum, GoneraI Specification for
MIL-R-63726 13.1, 13.2, Relay, lime Delay, Elec!ric and Electronic, General Specifiiion for
13.3
MILoS-83nl 14.1 Switch, Toggle, Unsealed and Sealed Toggle, Ganeral Specifiin for
MN-C-83733 15.1 Conmw%x, Ebc!dc@, Miniature, Rectangular Type, Rack to Panel,

EnvironmentResisting,200 Degraas C Tcxal ContinuousOpOfa@J
Temperature, General Spedcatbn for
MIL-S43734 15.3 socket Pl@n Electronic Components, General Specifiikm for
STANDARD
MIL-STD-756 Rehbility Modeling and Prec&tbn
MIL-STD-883 Test Mathods and Prmxdures for Microelectronics
Mk4TD-975 NASA Star#ad E&trid. and EbctmmachanbalPartsLkt

Efactronic
MIL=WD-1!547 Pmt8, Matwials ●nd Procasses fof Spaco Launch Veh&k8, TechnioaI
Requirements for
MtL-Sl’D-1~ ~ Requtrwnents ?orHyMd Mcrockufl FacflltWJand Unes
copies of specImat&ns and Stmdads required by contractors in comectbn with spcific acquisition
functbns should be oMlnad fmrn the contracting activityor as directed by the a)ntracting offiir. ~ngle
_ - ako available(withoutcharu8)uponwrfttenrequestI to:
StandwdizatbnDocumentOrderDesk
700 Robins Ave.
Building 4, Seotion D
Philadelphia, PA 19111-5094
(216) 697-2867
2-6
------ W
----- —- — ~_–– “. v., . . ~“.-y..,-..-- “,. - . . -----
/
MIL-HDBK-217F
I
3.0 INTRODUCTION
I
I
3.1 Rellablllty Englneerlng - Reliability k currently recognized as an essential need in miIitary

ebctronic systems. It is looked upon as a means for -cing costs fmm the factory, where rework of
debotive cxmpcments adds a mn-proddve overhead expense, to the field, where repak costs Inotude
not onty pa~ and labor but also transportation and storage. More knportantly, reliabilitydirectly inpacts
force effectiveness, measured In terms of availability or sortie rates, and determines the stze of the
“bgistics w inhibitingforce utilization.
The achievement of reliability is the fumtbn of refiabifity engineering. Every aspect of an eleotrodc
system, from the purtty of matertals used in fts oomponent devices to the operatots Inteflaoe, has an
impact on reliability. RelMWty engineering must, therefore, be appbd throughout the system’s
development in a dillgent and timely fashion, and integmted wfth other engbewhg disoi@nes.
A variety of reliability engineedng tools have been developed. This handbook provides the models
supportinga basic tool, reliabilitypredctbn.
3.2 The Role of Reflablllty Prediction - Reliability predictbn provides the quantitative baseline
needed to assess progress in reliabWty engineering. A prediction made of a proposed design may be
used in several ways.
A characteristic of Computer Aided Design is the ability to rapidly generate alternative solutions to a
particular problem. Reliability pmdiibns for each design alternative provide one measure of relative worth
which, mrWned with other considerations, will aid in selecting the best of the available options.
Once a design is selected, the reliabilii predktii nwiybe used as a @de to Iwpmvement by showing
the hphest contdbutorsto faifure. If the pwt stress analysis method is used, it may also rewaf other Wtful
areas for change (e.g., over stressed parts).
The Impact of proposed design changes on reliabilityoan be detemnktedonly by comparfng the reliatMty
predictions of the existing and proposed designs.
The ablltty of the design to maintain an accepable reliability level under environmental extremes may be
assessed through reHaMty pmdictbns. The predctkms may be used to evafuate the need for
erwtronmental control systems.
The effects of complexity on the probability of mission success can be evaluated through reliability
predictions. The need for redundant or baok-up systems may be determined with the aid of reliability
predictions. A tradeoff of redundancy against other reliability enhancing techniques (e.g.: more oooling,
higher part quality, etc.) must be based on reliability predictions coupled wfth other pertinent
considerations such as cost, spaoe limitations, eto.
The predbtbn will also he~ evahwte the s@fficance of reportscf fallume. For exa@e, if emmml falkrres
of one type or oo~nent occur In a system the predkted faliure rate can be used to determine whether
the number of failures Is commensurate with the number of components used in the system, or, that it
indicates a pmbbm area.
Finally, reliability predictbns are useful to varbus other engineering analyses. As examples, the location
of txdtt-h-test circuitry 6houfd be influenced by the predicted failure rates of the chwltry monftored, and
malntenanoe strategy plannem can make use of the relative pmbabifhy of a failure’s location, based on
predictions, to minimize downtime. Reliability predbtbrts are also used to evaluate the probabilities of
fajlure events described in a failure modes, effeots and criticalityanalysis (FMECAS).
3-1

—---- -—e -- * —e–-m—~+ ———__
... ... . .. ____.=---- - — — .
MIL-HDBK-217F
3.0 INTRODUCTION
3.3 Limitations of Rellabiltty Prodktions - This handbook provides a common basis for
reliability predictbns, based on anatysis of the best available data at the the of Issue. It Is interded to
make reliability prediction as good a tool as possble. However, like any tool, reliabilii predktbn rrust be
used htefiigently,withdue oonskferat)onof its MnWions.
The first limitation is that the failure rate models are point estimates which are based on available data.
Hence, they are valii for the condltbns under which the data was obtained, and for the devkes oovered.
Some extrapolation during model development is possible, but the inherently empirical nature of the
models can be severely restrictive. For exanple, none of the models m this handbook predict nuclear
suMvability or the effects of bnizing radiatbri.
Even when used in similar environmetis, the differences between system appliiions can be significant.
Pmdkted and aohleved rWaMlty have atways been doaer for ground electronic systems than for avbnk
systems, because the environmental stresses vary fess from system to system on the ground and hence
the field cor@tbns are In general cbser to the environment under which the data was oo#e@edfor the
prediction model. However, failure rates are also impacted by operational scenartos, operator
characteristics, maintenance -s, measummmt ~es and dtlfe~~s In deftnftbn of falfure.
Hence, a rellablflty predktlon should never be assumed to represent the expected field reliability as
measured by the user (i.e., Mean-The-Between-Maintenance, Mean-Tirne-Between-Removak, etc.).
This does not negate its value as a reliability engineering tool; note that none of the applications
discussed above requires the predicted reliability to match the field measurement.
Electronic technology is noted for its dynamk nature. New types of devices and new processes are
oontjnually introduced, compounding the difficultiesof predkting reliability. Evolutbnary changes may be
handled by extmpolatbn from the existing models; revolutionarychanges may defy analysis.
Another Ilrnitatbn of retiablltty predktbns is the mechanks of the process. The part stress analysis
method re@res a signlfkant afmmt of design detail. mk naturalty knposes a time and cost permtty.
More signiiioantly, many of the detatts are not avaitab+ein the earty des~ stages. For thts reason rn!s
handbook contains both the part stress anatysts method (Sectbns 5 through 23) and a simpler parts count
method (Appendix A) which oan be used in early design and bid formulatbn stages.
Finally, a basic limitation of reliability prediction is its dependence on correct application by the user.
Those who correctly apply the models and use the information in a conscientious reliability program will
find the predktbn a useful tool. Those who V&Wthe prediction only as a number whkh must exceed a
specifiedvalue can usualty find a way to achievetheir ~at without any i- on the system.
3.4 Part Stress Analysls Predlctlon
3.4.1 Appltcabllfty - Th&smethod is applicable when most of the design is completed and a detailed
pads list incbding part stresses Is available. ft can also be used during later design phases for rel&bility
trade-offs vs. patl selection and stresses. Sections 5 through 23 contain failure rate models for a broad
variety d parts used in ekmtrmb equipment. The parts we grouped by major categories and, where
appropriate, are subgrouped within oategorfes. For mechanical and electromechanical pats not covered
by this Handbook, refer to Bibfbgraphy ftems 20 and 36 (Appendix C).
The failure rates presented appty to equipment under normal operating conditbns, Le., with power on and
performingIts intended functbns in Its ~ended environment. Extrapolationof any of the base faihn rate
models beyond the tabulated vahJessuch as high or subzero temperature, electrical stress values above
1.0, or extrapolation of any associated model modifiers is oompletety invalid. Base failure rates can be
interpolated between electrical stress values from O to 1 using the underlying equations.
The general procedure for determining a board level (or system level) failure rate is to sum individually
calculated failure rates for each oomponent. This summation is then added to a failure rate for the citcuit
board (which includes the effects of solderfng parts to tt) using Section 16, Interconnection Assemblies.
3-2

MIL-HDBK-217F
3.0 INTRODUCTION
For parts or wires soldered together (e.g., a jumper wire between two parts), the connections model
appearing in Section 17 is used. Finaliy, the effects of connecting circuit boards together is accounted for
by adding in a faiiure rate for each connector (Section 15, Connectors). The wire between connectors is
assumed to have a zem failure rate. For various sewice use profiles, duty cycles and redundandes the
procedures described in MIL-STD-756, Reliability Modeling and Prediction, should be used to determine
an effective system ievel faiiure rate.
3.4.2 Part Qualtty - rne~~of apmh~am effti~ti pm fdhmratea~~mlntb

part models as a factor, *Q. Many parts am covered by spedfbations that have several quaffty levels,
hence, the part models have vaiues of XQ that am keyed to these qu~~ leve~= Such Pafis w~h their
quality designetora are shown h Table 3-1. The detdled requirements for these levels are ciearty defhed
in the applicable specffkation, except for mkrockcuits. Mkmimfis have qualhY levels which are
depenckht on the ~mber of MIL-STD-683 screens (or equivalent) to whii they are subjected.
TatNe 3-1: Parts With Multl-Level Qua!lty Speclflcatlons
w was E Uvumwa 7 UWw. r.q. . . . . . - I

S, B, B-1, Othec ~aliiy Judged by
Microcimuits Screening Level
Discrete Semiconductors JANTXV, JANTX, JAN
Capacitors, Established D, C, S, R, B, P, M, L
Reiiabiiii (ER)
Resistors, Established S, R, P, M
Reliablllty (ER)
Coils, Molded, R. F., S, R, P, M

ReiiabUty (ER)
Relays, Established R, P, M, L
Reliabiiily (ER)
Some Mrts are covered by older specifications, usualty referred to as Nonestablished Reliability (Non-ER),
that &“ not have rnutti-levels of qu~i. These part rn&fels generally have two qualfty levels d&i@ated &
‘MIL-SPEC.-, and “Lower”. If the part is procured in complete accordance with the applicable
specification, the ZQ value for MIL-SPEC should be used. If any requirements are waived, or if a
commercial part is procured, the XQ value for Lower should be used.
The foregoing discussion involves the ‘as procured” part quality. Poor equipment design, production,
and testing facilities can degrade pad quality. The use of the higher quality parts requires a total
W?U@M~ de$~ ~ W~ COtid process co-~rate with the high part quality. it wouid make iiile
sense to procure high quality parts on!y to have the equ”qmentproduction procedures damage the paftS
or introduce latent defects. Total equipment program descriptions as they might vary with different part
quality mixes is beyond the scope of this Handbook. Reliability management and quality control
procedures are described in other DoD standards and publications. Nevertheless, when a proposed
equipment development is pushing the state-of-the-art and has a high reliability requirement
necessitating high quality pans, the ~ equipment program should be given careful scrutiny and not just
3-3
I
I
MIL-HDBK-217F
3.0 INTRODUCTION
—
the parts quafhy. Otherwise, the bw failure rates as predicted by the models for hgh quality parts will not
be realized.
3.4.3 Uee Environment - N Dart reliabm models h@lJde the effeotsof envkorlmental Streeses
through the environmental factor,- %Er except ~orthe effects of bn~ @~~. The dem~b~ of
these envhunentsareshownin TaMe3-2. The~fac!or isqxmtfWdwithfn eachpartfaiUre rat8rnod8l.
These environments encorrpass the major areas of equprnent use. Some eqJ@ent wlfl experience
more than one environrrwnt during its normal use, e.g., equipment in spacecraft. h such a case, the
reliabitii analysis should be segmented, namely, missile launch (ML) conditions during boost into and
returnfromo~ and space flight(SF) while in orbft.
Table 3-2: Envhomnental Symbol and Deacrlptlon
EqtJhratBnt
MIL-HDBK-217E,
Notice 1
Environment ~ Symbol ~ symbol D-ription
Ground, Bengn GB GB Nonmobile, temperature and humidity

controlled environments readily accessitde to
%S maintenance; includes laboratory instruments
and test equipment, medical electronic
equipment, businass and scientifc computer
mmplexes, and missiles and support
equipment in ground sibs.
Ground, Fixed GF % Moderately amtrolied environments such as

installation in permanent racks with adequate
oooling air and possible installation m unheated
buildings; includes permanent tnstattatton of air
traffic control radar and communications
facilities.
Ground, MoMle GM GM Equipment installed on wheeled or tradwd

vehicles and equipment manually transported;
Mp
includes ttiicai missile ground support
equipment, mobile communication equipment,
tactical fire direction systems, handheld
=mmunications equipment, laser designations
and range finders.
Naval, Shelterad NS NS Includes shehered or bebw deck conditions on

surface ships and equipmant installed in
‘SB submarines.
Naval, Unsheltered Nu % Unprotected surface ahipborne equipment

NW exposed to weather conditions and equipment
immersed in salt water. Includes sonar
NH $@pment and equipment installed on hydrofoil
vessels.
3-4

I ,., . . .
., ..,.. . .. . . . . . . . . !. . . ...” ..,.
. . . .
., ,.,
.4-..-. . . .
I MIL-HDBK-217F
3.0 INTRODUCTION
Tabto 3-2: Environmental Symbol and Deecrtptlon (CXMWd)
E@valont
Environment Description
%E symbol
Airborne, Inhabitsd, AK Typical conditbns in cargo compartments

‘tc
whbhcan beoaX@adby arlahcraw.
Am
Envlronmont axhmes d ~~U~,
*IB ~u~,s- and vibration W. minimal.
Examplas Inctuda bng mission akcraftsuchas
thac130,c5, B!52andc141. Thisoatagory
aboappueata ~edaroasinbwu
performance smaller aircraft such as the T38.
Airborne, Inhabited, ‘IF ‘IF Same as NC but installed on high performance

Fighter aircraft such as fighters and interceptors.
‘IA
Examples include the F15, F16, F1 11, F/A 18
and Al O aircraft.
Airborne, Uninhabited, Am Environmentally uncontdbd areas which

%C
oannot be rnhdited by an aircrww during flight.
+ Environmental extrernos of pressure,
%JB tefnperature and shock maybe severe.
Examples include uninhabited araas of bng
missiin ahwaft such as the C130, C5, B52 and
C141. This category aiso appJiis to
uninhabited area of bwer performance smaller
aircraft such as the T38.
Airborne, AUF Same as NC but installed on high performanem

Uninhabited, aircraft such as f~htem and interceptors.
Fighter Exarnplesincludethe F15, F16, F111 and AlO
aircraft.
Equipment installed on helicopters. Ap@h to

Airborne, Rotary
w-
ARvv %/
both internally and externallymounted
squipmentsuch as laser designators, fire
mntrol systems, and communications
squ”pment.
Space, Flight SF --- APP=J— ~mw9~~~

cmditions. Vehicle neither underpowered
flight nor in atmosphorio reentry; includes
satellites and shuttles.
3-5

I
I MIL-HDBK-217F
3.0 INTRODUCTION
—
Table 3-2: Environmental Symbol and Descrfptlon (cent’d)
Equivabnt
MIL+fDBK-217E,
Mice 1
Environment ~ Symbol Description
~E Symbol
Missile, Flight + % Conditions r.lated to poweredflightof air

breathing missibs, cruise missiles, and
4A missiles in unpowered free flight.
Miiile, Launch Severe amditions relatwi to missile launch (air,

% \
u= ground and Sea), space Vshiob boost into
orbit, and vehicle re+n~ and landing by
par~e. Also applies to soI&l roclwt motor
ww~bn POWW@ fhght, and torpedo and
missile launch from submarines.
Cannon, Launch CL CL Extremely severe conditions related to cannon

launching of 155 mm. and 5 inch guided
projectiles. Conditions apply to the projectile
trom launch to target impact.
3.4.4 Part Failure Rate Models - Part failure rate models for microelectronic parts are significantly
different fmm those for other parts and are presented entirely in Section 5.0. A ~pical example of the
type of model used for most other part types is the folbwing one for discrete semiconductors:
~=~fiTfiA~R~S~C~Q~E
is the patt failure rate,
is the base failure rate usually expressed by a model relating the influence of electrical and
temperature stresses on the part,
and the other n factors modify the base failure rate for the category of environmental
eppkath amf other parameters that affectthe paft reKMity.
me ZE and XQfaotors are used in most ali models and other x factom app~ only to SWC~~ ~dels. The
applicability of z factors is Identified in each sectbn.
The base failure rate (~) models are presented in each part section along with identification of the
applicable model factors. Tables of calculated ~ values are also provided for use in manual calculations.
The model equations can, of course, be incmporated into computer programs for machine processing.
The tabulated values of ~ are cut off at the part ratings with regard to temperature and stress, hence, use
of parts beyond these cut off points will overstress tk pan. The use of the lb models in a ~mPuter
3-6

MIL-HDBK-217F
.
3.0 INTRODUCTION
pmgrarn should take the part rating limits into account. The ~ equations are mathematically continuous
beyond the part ratings but such faiiure rate vaiues are invalii in the overstressed regions.
Aii the part modeis imiude faiiure data from both cahstmphic and permanent drift failures (e.g., a resistor
permanently falling out of rated tolerance bounds) and are based upon a constant failure rate, except for
motors whch show an increasing failure rate overtime. FaiJures associated with connection of parts into
circuit asserrbiies are not imluded within the part faiiure rate models. Information on cxmnection reliabilii
is provided in Sections 16 and 17.
3.4.5 Thermal Aspects - The use of this prediction method requires the determinatbn of the
temperatures to which the parts are subjected. Sinoe parts reliability is sensftive to temperature, the
thermal anatysis of any design shouid fairty accurately provide the ambient temperatures needed in using
the part models. Of course, bwer temperatures produce better reliihty but aiso can pmc&ce hcreased
penatties in terms of added toads on the environmental oontrol system, unless achkved through
improved thenmal design of the equipment. The thermal analysis shouid be part of the design process
and included in ail the trade-off studies covering equipment performance, reliability, weight, volume,
environmental control systems, etc. References 17 and 34 listed in Appendix C may be used as guides in
determining component temperatures.
3-7
[
,,.,.... . ,., ,. ,.. ... . ...! ,.- . . .
.,. . . .
I
I
MIL -HDBK-217F
4.0 RELIABILITY ANALYSIS EVALUATION
.
Tabie 4-1 provides a ~ “ for evaluating a reliability predii report.
For completeness, the cttecfdist includes categories for refiabiiity modeling and albcatbn, which are
sometimes deiivered as part of a predctibn report. it should be noted that the scope of any reliability
analysis depends on the specific requirements called out in a statement-of-work (SOW) or system
speckatbn. The inclusion of this ckkiist k not intended to change the soope of these requirements.
Tabl. 4-1: Reliablllty Anatysls Checkltet

Malor
—--—- COncarns
-— --—-. --— m
Commonts
— . . . ..-
MODELS
Are allfunctional elements included in the System design drawingddiagrarna must be rwiewed to
raliabiihybbdc diagram /model? be sure that the relkbilii modekfkgram qreoa with tho
hardwn.
Are all modes of operation considered in the ~ @OS, an~ae paths, degraded conditbns and
nlti modd? redundant units must bedefinedandmodeted.
Do the math model results show that the design Unit failure rates and redundancy aquations are used
achieves the reliabiiii requirement? from the detailed paft predictions in the system math
model (See MIL-STD-756, Reliability Predictbn and
Modeiing).
ALLOCATION
Are system reliability requirements allocated Useful Ievets are defined as: equipment for
(suMivided) to useful levels? sulxxmtractors, assemblies for sub-subcontractors,
arouit boards for designers.
Does the allocation process consider Conservative values are needed to prevent reallocation
;am~:;?ty, design flexibility, and safety at every desgn change.
m
PREDICTION
Does the sum of the parts equal the value of Many predictbns neglect to include all the parts producing
the module or unit? optimistic results (check for solder connections,
connectors, circuit boards).
Are environmental ccmdit”mnsand part quality Optimistic quality levels and favorable environmental
representative of the requirements? cxmditions are often assumed causing optimistic resutts.
Are the circuit and part temperatures defined Temperature is the biggest driver of part failure rates;
and do they represent the design? bw temperature assumptions will cause optimistic
results.
Are equ~ment, assembly, subassembly and Idontifioation is needed so that corrective actions for
part reliability drivers identified? reliabitii improvement can be considered.
Are alternate (Non MIL-HDBK-217) failure rates Use of alternate failure rates, if deemed necessary,
highlighted along with the rationale for their require submission of backup data to provide credence in
use? the values.
Each component type should be sampled and failure

Is the level of detail for the part failure rate rates completely reconstructed for accuracy.
models sufficient to reconstruct the result?
Prediction methods for advanced technobgy parts should
Aro critical components such as VHSIC, be oarefully evaluated for imp-on the module and
Monolithic Microwave Integrated Circuits system.
(MMIC), Application Specific Integrated
Circuits (ASIC) or Hybrids highlighted?
I
I
4-1
MIL-HDBK-217F
5.0 MICROCIRCUITS, INTRODUCTION
This section presents failure rate prediction models for the following ten mapr classes of microelectronic
devices:
Swis2rl
5.1 Monolithic Bipolar Digital and Linear Gate/LogicArray Devices
5.1 Monolithic MOS Digital and Linear Gate/Logic Array Devices
5.1 Monolithic Bipolar and MOS Digiial Microprocessor Devices
5.2 Monolithic B~lar and MOSMemoryDevices

5.3 Very High Speed Integrated Chcuit (VHSIC/VHSIC-Like and VLSI) CMOS Devioes (> 60K
Gates)
5.4 Monolithic GaAs Digital Devices
5.4 Monolithic GaAs MMIC
5.5 Hybrid Microcircuits
5.6 Surface Acoustic Wave Devices
5.7 Magnetic Bubble Memories
In the title description of each monolithic device type, Bipolar represents all llL, ASITL, DTL, ECL, CML,
ALSITL, HTTL, Fl_ll, F, L~L, SITL, BiCMOS, LSITL, IIL, 13L and ISL devices, MOS represents all
metal-oxide microcimuits, which includes NMOS, PMOS, CMOS and MNOS fabricated on various
substrates such as sapphire, poiycrystaftine or single crystai siiicon. The hybrid model is structured to
accommodate aii of the monolithic chip device types and various complex”~ Ieveis.
Monolithic memory complexity factors are expressed in the number of bits in accordance with JEDEC STD
21A. This standard, which is used by ail government and industry agencies that deal with microcircuit
memories, states that memories of 1024 bits and greater shall be expressed as K bts, where 1K = 1024
bits. For example, a 16K memory has 16,364 bits, a 64K memory has 65,536 bits and a 1M merno~ has
1,048,576 bits. Exact nurrbers of bits are not used for memories of 1024 bits and greater.
For devices having both linear and digital functions not covered by MIL-M-3651 O or MIL4-38535, use the
iinear modei. Line drivers and iine receivers are considered iinear devices. For iinear devices not covered
by MIL-M-3851 O or MiL-i-38535, use the transistor count from the schematic diagram of the devioe to
determine circuit complexity.
For digitai devices not covered by MIL-M-3851 O or MIL-I-38535, use the gate count as determined from
the logic diagram. A J-K or R-S flip fbp is equivalent to 6 gates when used as part of an LSi circuit. For the
putpose of this Handbook, a Oate is constierecf to be any one of the following functions; AND, OR,
exciusive OR, NAND, NOR and inverter. When a bgic diagram is unavailable, use dev.ke transistor count
to determine gate count using the folbwing expressions:
Bipolar No. Gates = No. Transistors/3.0

CMOS No. Gafes = No. Transistors/4.O
Al! other MOS except CMOS No. Gates = No. Transistors/3.O
5-1

MIL-HDBK-217F
5.0 MICROCIRCUKS, INTRODUCTION
A detailed form of the Section 5.3 VHSIC/VHSIGLikemodel is inoluded as Appendix B to allow more
detailed WleWfs to be performed. Reference 30 should be consulted for more information about this
model.
Reference 32 should be consulted for more Informatbn about the models appeartngin Sections5.1,5.2,
5.4,5.5. and 5.6. Reference 13 should be consulted for additional information on Section s.7.

MIL-HDBK-217F
5.1 MICROCIRCUITS, GATE/LOGJC ARRAYS AND MICROPROCESSORS
DESCRIPTION
1. Bipolar Devices, Digital arxf Linear Gate/Logic Arrays
2. MOS Devices, Di@tal and Linear Gate/Logio Arrays
3. F*H PmgranwwMe Lx ArTay (~) am
Programmable Array Logic (PAL)
4. Microprwessors
~= (ClZT + C2Y@ ~ Fdlures/106 t+ours
Hgml,ar Di@al and Linear GafeA@c Amy Die Cm@exity Failure Rate-Cl
DighJ I Linear PLA/PAL
No. Gates [ c. No. Transkws I c. No. Gates c,
1 to 100 .0025 1 to 100 .010 up to 200 .010

101 to 1,000 .0050 101 to 300 .020 201 to 1,000 .021
1,001 to 3,000 .010 301 to 1,000 .040 1,001 to 5,000 .042
3,001 to 10,000 .020 1,001 to 10,000 .060
10,001 to 30,000 .040
30,001 to 60,000 .080
~ D@al and Linear Gate/Logic Army Die CorqSexlty Failure Rate - Cl”
DQital Linear PLNPAL

No. Gates c, No. Transistors c, No. Gates c,
1 to 100 .010 ltol .010 up to 500 .00085

101 to 1,000 .020 101 to 3 .020 501 to 1,000 .0017
1,001 to 3,000 .040 301 to 1,0 .040 2,001 to 5,000 .0034
3,001 to 10,000 .080 1,001 to 10,0 .060 5,001 to 20,000 .0068
10,001 to 30,000 .16
30,001 to 60,000 .29
●NOTE: For CMOS gate counts above 60,000 use the V1-iSIC/VHSIC-Like model in Section 5.3
All Other Model Parameters

Die Complexity Failure Rate - Cl I Parameter Refer to
Bipolar MOS
No. Bits c, c, Section 5.8
Section 5.9
II
Up to 8 .060 .~4
Upto 16 .12 .28 Section 5.10
up to 32 .24 .56
5-3

..
MIL-HDBK-217F .
.
●
5.2 MICROCIRCUITS, MEMORIES
DESCFilPTION
1. Red ~ Memories (ROM)
2. ~armable Read Only Memorns (PROM)
3. lJ~ m- PROMS (UVEPROM)
4. “Flash; MNOS and Floating Gate ElectdcaBy
Erasable PROMS (EEPROM). bOkJdf3S both
fbating gate tunnel oxide (FLOTOX) and textured
polysiliin type EEPROMS
5. Static Rancbm Access Mermles (SRAM)
6. ~ R~ /@cess Mwnories (DRAM)
~= (C1 %T + C2 %E + ~ ~ ~ FailumsH06 HOtJm
Die Complexity Faih.JmRate -Cl

M > lar
PROM, SRAM
uvEPROM, (MOS & ROM,
Memory Size, B (Bits) ROM DRAM BiMOS) PROM SRAM
z=’
up to 16K .00065 .00085 .0013 .0078 .0094 .0052

16K<Bs64K .0013 .0017 .0025 .016 .019 .011
64K<Bs256K .0026 .0034 .0050 .031 .038 .021
256K<Bs1M .0052 .0068 .010 .062 .075 .042
Al Factor for ~c Cablatbn ~ Factor for kc Calculation

Total No. of I Total No. of Programming I
Programming Textured- Cycles Over EEPROM Textured-Poly A2
Cycles Over Flotox ‘ Polp Ltfe. C I
EEPROM Life, C
Up to 300K o
up to 100 .00070 .0097
100< CS2OO .0014 .014 300K < C s 400K 1.1
200< C<500 .0034 .023
500< CS1K .0068 .033 400K < C s 500K 2.3
1K<CS3K .020 .061
3K<CS7K .049 .14 AJl Other Mc IelParametem
7K<CS15K .10 .30 Parameter Refer to
15K < CS20K .14 .30
2oK<csi30K .20 .30 XT Section 5.8
30K < CS lOOK .68 .30
100K < CS200K 1.3 .30 C* Section 5.9
200K<CS400K 2.7 .30
400K < C s 500K 3.4 .30 Section 5.10
fiE, ~Qt XL
1. Al =6.817 x10+(C) ~c (EEPROMS Page 5-5
2. No underlying equation for Textured- only)

Poly.
~c = O For all other devices
5-4
. .
I ..
I MIL-HDBK-217F
w, -
All Memory Devices Except Fbtox and ~=o

Textured-Poly EEPROMS
A*B*
Fbtox and Textured Poty EEPROMS
~[
c= Al 61 + ~
1 ‘ECC
P*
Al P-54 Page 54
B, Page 5-6 Page 5-6
A2 A2=o Page 5-5
02 ~=o P* 5-6
%Q Sectbn 5.10 Seotion 5.10
Error Correction Code (ECC) Optkms:

1. No On-Chip ECC ~ECC = 1.0 %ECC = ~.0
2. On-ChP Hamming Code ~ECC = .72 %ECC = .72
3. Two-Needs-One ~ECC = .68 ~ECC = .66
Redundant Cell Approach
NOTES: 1. See Reference 24 for modeling off-chip error detect”on and correction
schemes at the memory system level.
2. If EEPROM type is unknown, assume Fbtox.
3. Error Correctbn Cde Optbns: Some EEPROM manufacturers have incorporated

on-chip error correction chxwitry into their EEPROM devioes. This is represented by
the on-chip hamming code entry. Other manufacturers have taken a redundant cell
-~ which immporates an extra storage transistor in every memory ceil. mis
is represented by the two-needs-cm redndant cell entry.
4. The Al and 4 factors shown in Section 5.2 were devebped based on an assumed
system life of 10,000 operating hours. For EEPROMS used h systems whh
significantly bnger or shorter expected lifetimes the Al and ~ factors should be
multiplied by:
10,000
System Lifetime Operating Hours
5-5

MIL-HDBK-217F
t 1
~
“Fa
x
co
x
*
8
m“
n
s I
%6

===1 ■ I
.—
. .. , ,,
MIL-HDBK-217F
5.3 MICROCIRCUITS, VHSICNHSIGLIKE AND VLSI CMOS
DESCRIPTION
CMOS greater than 60,000 gates
~ “ %@MFGfiPCD + ~pzEx@p~ + ~~~ Failurest106 HOUrS
Ok Base Falture Rate - ~D ANOther Model Parameters

Part Type Parameter Refer to
I ’60
%T Section 5.8
Logic and Custom 0.16
%E~~ Se@on 5.90
me Army 0.24 *
Package Type Correction Factor - Xm
I ‘PT
Paokage Type Hefmetc Nm&mettc
Manufaotwing Process I %FG I
DIP 1.0 1.3
QML or QPL .55 Pn Grid Amy 2.2 2.9
Non QML or Non QPL

II 2.0
CMp Carrier
(Surface Mount
T@chnnlnnv\
4.7 6.1
Dle Complexity Correction Factor - ~D

I Feature S&e i
Die Ama (Cr#) 1
(Mkmns) As.4 .4< As.7 .7< AsI.O 1.0< As2.O 2.0< A s 3.0
.80 8.0 [ 14 I 19 1 38 i 58
I 1.00 I 5.2 I 8.9 I 13 I 25 I 37 1
1.25 I I I I I
A = Total Scrbed Chip Die Area in cm2
‘-f+) [v ‘:i+-M 58 8“2 ‘:’-’”a”sw;:bns)s)
Die Area Conversion: cm2 = MIL2 + 1S5,000
Package Base FaUure Rate - ~p Ekctrical Overstress Faiture Rate - l~h~
I Number of Pins ‘BP VTH (ESD %SC@bility (VOttS))* ‘EOS

24 .0026
28 .0027 o- 1000 .065
40 .0029
44 .0030 >1000-2000 .053
48 .0030
52 .0031 >2000-4000 .044
64 .0033
84 .0036 >4000- 16000 .029
120 .0043
124 .0043 > 16000 .0027
144 .0047
220 .0060 ~OS - (-In (1 -.00057 exp(- .0002 Vw)) /.00876
ksp = .0022+ ((1 .72X 10-5) (NP)) ‘TH = ESD Susceptibility (volts)
NP = Nu~r of Package Pins ● Voltage ranges which will cause the pad to
fail. If unknown, use O -1000 vofts.

,.,
1 UJCU7_n U Al Q!
.-.
MIL-HDBK-217F
5.4 MICROCIRCUITS, GaAs MMIC AND DIG~AL DEVICES
DESCRIPTION
Ga)iiim Arsenide Microwave Monolithic Integrated Citwit
(GaIW MMIC) amt GaAs Digitai hltegrated Ci-ixhsUshg
MESF~ Transistorsand Gold Based MetaJliion
W Die Complexity FaiWe Rates - Cl ..

complexity c, Application %A
(No.of Elements)
MMIC Devices
1 to 100 4.5 Low Noise & Low Power (S 100 mVV) 1.0
101 to 1000 7.2 Drtvar& High Rnuer(> 100 mw) 3.0
Unknown 3.0
1. Cl accounts for the following active
elements: transistors, diodes.
Digttal Devices
All Digital Applications 1.0
<
-: Die CompkIXRy Failure Rates - Cl
Complexity c,
(No. of Elements)
All Other Model Parametem
Parameter Refer to
1 to 1000 25
1,001 to 10,000 51 XT Sectbn 5.8
1. Cl aocounts tor the following aotive C* Section 5.9

elements: transistors, diodes.
nE, XL, ~Q Section 5.10
5-8

I
——
I .,. .... ...

?
MIL-HDBK-217F
5.5 MICROCIRCUITS, HYBRIDS
DESCRIPTION
Hybf@ MicrociruJits
~=[~Nc~l(l +.2XE)ICF~Iy FaMureM06Hours
Nc = Number of Each Particular Conpnent

kc = Failure Rate of Each Particular Corqmnent
The general pmcechme for developing an overall hybrid faikJm rate )s to oalculde an individual failure fate
for each component type used in the hybrid and then sum them. This summatbn is then modfied to
axoun for the ovendl hybrid fumtiin (x#, suwning level (~), and matudty (~. ~ ~ ~
failure rate is a function of the active mmponent faiture modified by the environmental factor (i.e., (1 + .2
~E) ). Ow th ~~ne~ ~ w~ in th fob~~ t8bk ar8 rnns~~ to ~nf~e 8@Wb~& ~
the overall failure rate of most hybrids. AU other cxxnponent types (e.g., m@stor& inductag et@ are
considered to contribute lnslgnffkanttyto the overalt hybridfailure rate, and are assumed to have a failure
rate of zero. This simplification is valid for most hybrids; however, if the hybrid consists of mostiy passive
components then a failure rate should be calculated for these devices. tf factorirm in othi?r comQonenf .
types, assume ZQ = 1, ~ =1 and TA = Hybrid Case Temperature for these calculat b~s.
Determination of&
Determine ~ for These Handbook Section Mak~ These Asswptions When Determining
co mponent Types L
Microcircuits 5 C2=0, XQ=l ,1= 1, TJ as Determined from

Section 5.12, ~P = O (for VHSIC).
Discrete Semiconductors 6 ~ = 1, TJ as Detemined from Section 6.14,

%E=l.
Capacitors 10 ~=1, TA = Hybrid Case Temperature,

~E=l.
NOTE: If maximum rated stress for a die is unknown, assume the same as for a discretely p-
die of the same type. If the same dw has several ratings based on the discrete ~
type, assume the bwest rating. Power rating used sh6uld be based on case terrper~ure
for discrete semiconductors.
Chcuit Function Factor - F All Other Hybrfd Model Parameters

Circuit Type I 1
Digital 1.0
I ~LI ~Q, ~E
I Refer to Section 5.10
I
Vii, 10MHz<f<l GHz 1.2
Microwave, f >1 G1-lz 2.6
Linear, f <10 MHz 5.0
Power 21
5-9
i
i
MIL-HDBK-217F
5.6 MICROCIRCUITS, SAW DEVICES
DESCRIPTION
Surface Acoustic Wave Devices
$ = 2.1 IQ %E Fai)ures/106 Hours
Quaiity Factor - ~ Environmental Factor - xcL
Screening Level XQ Environment %E

.
.5
%3
10TerTpf&mr’e Cycleal
(+5% to .10
+125°C) with end point electrical 2.0
%
tests at temperature extremes. 4.0
II %
I
None beyond bestcwmmwkat
practices. I 1.0 his
Nu
4.0
6.0
AC 4.0
5.0
‘IF
5.0
%c
8.0
‘UF
8.0
‘RW
SF .50
MF 5.0
ML 12
CL 220
5-1o

Check the source to verify that this is the current version before use. .-—
El I I
1
I
MIL-HDBK-217F
5.7 MICROCIRCUITS, MAGNETIC BUBBLE MEMORIES
The magnetic bubble memory device in its present form is a noMwnWic assembty consisting of the
folbwing two mapr structural segments:
1. A basic bubble chip or die consisting of memory or a storage area (e.g., an array of minor
hops), and required control and detection elements (e.g., generators, various gates and
detectors).
2. A magnetic structure to provide controlled magnetic fields consisting of permanent magnets,

coils, and a housing. .
These two structural segments of the device are intemcmnected by a mechanical substrate and lead
frame. The interconnect substrate in the present technology is normally a printed cirwit bead. tt shoukf
be noted that this model does not inohde external suppmt microelectronic devices reqJired for magnetk
bubble memory operation. The model is based on Reference 33. The general form of the fakwe rate
model is:
~= ~1 + ~ FaiJurest106 Hours
where:
k, = Failure Rate of the Control and Detection Structure
~ = Failure Rate of the Memory Storage Area
ctips per Package - NR Device Complexity Failure Rates for Control and
Detectbn Stmcture - Cl, and C,l
Nc = Number of Bubble Chips per
Packaged Device c,, = .00095( N1)”40
Temperature Factor - XT C2, - .0001 (N1)”226
N, = Number of Dissipative Elements

-Ea 1 1
~T=(.l)@xp
[ 8.63 X 10-5
(
TJ +273-=
)1 on a Chip (gates, detectors,
generators, etc.), N, $1000
Use:
= .8 to Caloulate ?tTl
%
Ea = .55 to Calotdate *T2
TJ = Junction Temperature (°C),

25 STJS175
TJ . TCASE + IO”C

t w m m u
MIL-HDBK-217F
5.7 MICROCIRCUIT, MAGNETIC BUBBLE MEMORIES
Write Duty Cycle Factor - ~ Device Complexity Failure Rates for Memory
Storage Sttucture -Cl ~ and C99
%2 = .00007(h@”3
Zw = 1
C22
s= .00001 (N2)”3
Avg. Device Data Rate ~,
D=
Mfg. Max. Rated Data Rate
N2 - Number of Bits, N2s 9 x 106
R/w= No. ofReads per Write
NOTE:
For seed-bubble generators, divide AJlOther Model Parameters
~ by 4, or use 1, whkhever is greater. b
Parameter Section
I C5 I 5.9
5.10
Avg. Device Data Rate ~,

D=
Mfg. Max. Rated Data Rate
5-12

I
I
&
MIL+IDBK-217F
S.8 MICROCIRCUITS, XT TABLE FOR ALL
-18
-1!!
.
1
I
5-13

—.——— —_z—————...—
.,. ,! .-. . ..!-..
f
MIL-HDBK-217F
I
I
I 5.9 MICROCIRCUITS, C2 TABLE FOR ALL
I
Package Failure Rate for all Mhocircuits - C2
. —~. . xp”
Fbnnetb . w%
w/Solder or Nonhermetic:
Number of Weld S@ Pin Dlf% ti Gtass Fk@adcs wtth DIPs, m
Cans4
Funct”mnal Grid Array Axiaf Leads on SMT (Leaded
Sea? .
Pins, Np (PGA)l, SMT and
50 Mil Centers3
(Leaded and Nonleaded)5
Nonkmded)
3 .00092 .00047 .00022 .00027 .0012

4 .0013 .00073 .00037 .00049 .0016
6 .0019 .0013 .00078 .0011 .0025
8 .0026 .0021 .0013 .0020 .0034
10 .0034 .0029 .0020 .0031 .0043
12 .0041 .0038 .0028 .0044 .0053
14 .0048 .0048 .0037 .0060 .0062
16 .0056 .0059 .0047 .0079 .0072
18 .0064 .0071 .0058 .0082
22 .0079 .0096 .0083 .010
24 .0087 .011 .0098 .011
28 .010 .014 .013
36 .013 .020 .017
40 .015 .024 .019
.025 .048 .032
:: .032 .041
128 .053 .068
180 .076 .098
224 .097 .12
1. c2=2.8 x 10+ (f$J ‘.m 2. c~ = 9.0 x 10-5 (N&1”51
3. C2 = 3.0 x 10-5 (N~l .= 4. C2 = 3.0 x 10-5 (N~2.01
1.08
5. C2 = 3.6 X 10+ (I$J
NOTES:
1. SMT: Surface Mount Technology
2. DIP: Dual In-Line Package
3. If DIP Seal type is unknown, assume glass
4. The package failure rate (C2) aocounts for failures associated only with the package itsetf.
Failures associated with mounting the package to a circuit board are accounted for in
Section 16, Interconnection Assemblies.
5-14

..= . —————————
———
MIL-HDBK-217F
I
5.1O MICFIOCJRCUITS, %E,~L ANDxO TABLES FOR ALL
Envinmment Factor - ~ Quality Faotors - ~

Environment %E Descrf@on I u
% .50
. .
s~
% 2.0
% 4.0 1: Procured in fufl accordance

NS with MIL-M-38!H O,Ciass S
4.0
requirements.
N“ 6.0
2. Procuraf in full accordance .25
AC 4.0 with MlL-+=3853smd
%F 5.0 ~a B lherwo (Cfaae u).
‘Uc 5.0
3. Hybrids: (Procured m Cfaaa
*UF 8.0 s requirements (Qualily L@vOl
K) of MIL-H~.
ARW 8.0
SF .50
MF 5.0
ML 12 1. Procured in full accordance
c1 220 with MIL-M-3851 O,class B
requirements.
Learning Factor - XL 2. Procured m fut!accordance 1.0

with MIL-I-38535, (Class Q).
Years in Production, Y I 7CI
s .1 2.0 3. Hybrids: Procured to Class B
.5 1.8 requirements (QualityLevel
1.0 1.5
1-f)of MIL-H-3$534.
1.5 1.2
*
XL= .01 e)(p(s.ss - .35Y) Fully compliant with all

requirements of paragraph 1.2.1
Y = Years generic cfevice type has been d MIL-STD-883 and procured to a 2.0
MIL drmving, DESC drawing or
in production
dher government approved
documentation. (Does not include
hybrids). For hybrids use custom
screening section below.
5-15
I T** & -- b--h -a--s -d.- ..—1 4 ---

.,. .,. ,, ..+.... .. . .
I MIL-HDBK-217F
—
5.10 MICROCIRCUITS, %E, %L AND XQ TABLES FOR ALL
Quality Factors (cent’cf): ~

CdcUlation for Custom Screening Programs
Group MlL-STD-& Scmermeat (Note 3) Poinf Va)uatkm
TM 10IO(Ternperature Cycle, Cond BMinirmsm)and TM 2001
(Constant Acceleratbn, Cord B Minimum) and W 5004 (or 5008
1“ for Hybrids) (Finaf Electrkals @Te~E%trenws) and TM 1014 50
(Seal Test, Cond ~ B, or C) and TM 2009 (External Visual)
TM 1O1O (Terrqmature Cycle, Cond B Minimum) or TM 2001
(Constant Acceleration, Cond B Minimum)
2* TM 5004 (or 5008 for Hytxlds) (Fhal EkOtca& @ Terrp Extremes) 37
and TM 1014 (Seal Test, Cond A, B, orC) and TM 2009 (External
visual)
Pre-Bum in Electrkals
3 TM 1015 (Bum-in B-LeveVS-Level) and TM 5004 (or 5008 for 30 (B Level)
(Post Burn-in ElectdcaJs @ Te ~ Extremes) 36 (S Level)
4* Th42020Pirld(PaRi0fe fmpaothJ0ie0 ~) 11
5 TM 5004 (or 5008 for Hybrids) (Final Electricats @ Te~rature 11 (Note 1)

Extremes)
6 TM 2010/17 (internal Visual) 7
7* 7 (Note 2)
TM 1014 (Seal Test, Cond A, B, or C)
8 TM 2012 (Radiography) 7
9 TM2009 (ExternalVisual) 7 (Note 2)
10 TM 5007/5013 (GaAs) (Wafer Acceptance) 1
11 TM 2023 (Non-Destructive Bond Pull) 1
87
ZQ =2+
Z Point Valuations
●NOT APPROPRIATE FOR PIJWTIC PARTS.
NOTES:
1. Point valuation only assigned if used independent of Grwps 1, 2 or 3.
2. Point valuatbn onty assigned if used independent of Groups 1 or 2.
3. Sequencing of tests within groups 1, 2 and 3 must be followed.
4. TM refers to the MIL-STD-883 Test Method.
5. Nonhermetk pafis should be used onty in controlled environments (i.e., GB and other
temperaturelhumldtty controlled environments).
EXAMPLES:
87
1. Mfg. performs Group 1 test and Class B bum-in: ~Q = 2 +_ = 3.1
87
7
-. Mfg. performs infernal visual test, seal test and final electrical test: ~Q = 2+~ = 5.5
Other Commercial or Unknown Screening Levels fiQ= 10
5-16

.—___ . —
—-
., .,.
MIL-HDBK-217F
5.11 h81CROClRCU?TS, 7.s DETERMINATION, (ALL EXCEPT HYBRIDS]
Ideally, device case temperatures should be determined from a detailed thermal analysis of the
wmm. NV* @wtion temperature is then calculated with the fofbwing relationship:
.. TJ . Tc + OKP
TJ = Worst Case Ju~ion Tempemture ~C).
Tc = Case Temperature (oC). If not avaiM#e, w the Wlowing default tatlb.
Default Case Tempemture (T~ for all Environments
TC (“C)
I
35 45 50 60 60 75 75 60
I 35 50 60 45
I
(3JC = Junction-toese thermal resistance (°CAwtt) for a device soldered into a printed circuit
board. If OK is not available, use a Vabe contained in a specification for the closest
equivalentdevke or use the following tabJe.
Die Area >14,400 m~ ew Die Areas 14,400 rni?

Package Type
(w 8JC (~
(ceramic only)
Dual-in-Lm 11 28
Flat Package 10 22
Chip Carner 10 20
Pin Grid Array 10 20
Can 70
P = The maximum power dmtion realized in a systemappficatiin. If the applied power is

not available, use the maxknum power dissipationfrom the specificationfor the closest
equivalent device.

MIL-HDBK-217F
—
5.12 MICROCIRCUITS, T-l DETERMINATION, (FOR HYBRIDS)
This sectbn descrfbes a method for estimating junction temperature (TJ) for integrated circuit dke
mounted inahybrkfpackage. A~k~~mti~timormrew-e~-tiW

within a sealed package. Each substrate assetity consists of active and passive chips with thick orthin
film metallization mounted on the substrate, whii in turn may have multiple layers of metallization and
dielectric on the surface. Figure 5-1 is a cross-sectional view of a hybrid with a single multi-layered
substrate. The layers within the hybrid are made up of various materials with different thermal
characteristics. The table folbwlng Figure 5-1 provkles a llst of commonly used hybrid materials with
typical thicknesses and comesponding thermal conductivtties (K). If the hybrid internal structure cannot be
determined, use the following default values for the temperature rise from case to junction: miomdrculs,
1O“c; transistors, 25%; diodes, 20W. kalJrm ~ are at Tc.
CHIP (A)
LID
CHIP ATJACH (B) . \~
I
INSULATING
LAYER (C)
m
SUBSTRATE (D)
MATERIAL
THICKNESS, L i PACKAGE
EPOXY (E) LEAD
CASE (F)
Figure 5-1: Cross-sectional View of a Hybrtd with a Single Multl-Layered Substrate
5-18
MIL-HDBK-217F
5.12 MICROCIRCUITS, T-l DETERMINATION, (FOR HYBRIDS)
Tvkal Hvbrid Characterktii
Conductivity,
Typkal Feature Ki IL
Material Typical U!wge Thickness, From Figure Ki
()() i
+ (in.) 5-1 .W/in*
() Win ( in2 oC/W
Silicon Chip Device 0.010 A 2.20 .0045
chip Devbe 0.0070 A .76 .0092
Au Eutectic Chip Attach 0.0001 B 6.9 .000014
Solder Chip/Substrate Attach 0.0030 B/E 1.3 .0023
Epoxy (Dielectric) Chip/Substrate Attach 0.0035 BIE .0060 .58
Epoxy (Conductive) Chii Attach 0.0035 B .15 .023
Thck Film Dielectric Gl= Insubthg Layer 0.0030 c .66 .0045
Alumina Substrate, MHP 0.025 D .64 .039
Beryllium Oxide Substrate, PHP 0.025 D 6.6 .0038

Kovar Case, MHP 0.020 F .42 .048
AJuminum Case, MHP 0.020 F 4.6 .0043
Copper Case, PHP 0.020 F 9.9 .0020
NOTE: MHP: Muftichip Hybrid Package, PHP: Power Hybrid Package (Pwc > 2W, TypicaUy)
;1(*)(‘i)
em= = A
n = Number of Material Layefs

W/in*
Ki z Thermal Conductivity of ith Material ~ (User Provided or Fmm Table)
()
Li = Thiiness of im Material (in) (User Provided or From Table)
A = Die Area (inz). If Die Area cannot be readity determined, estimate as follows:
A = [ .00278 (No. of DB Active Wire Terminals) + .041#
Estimate TJ as Folk)ws:
TJ = Tc + .9 (e~ (p~
Tc = Hybrid Case Temperature (“C). If unknown, use the Tc Defautt Table shown in Section 5.11.
eJ~ = Junction-to-Case Thermal Resistance (°C/W) (As determined above)

Pf) = Die Power Dissipation (W)
5-19
MIL-HDBK-217F
5.13 MICROCIRC UIT& EXAMPLES
Example 1: CMOS Dlgftal Gate Array
Given: A CMOS digitaltiming~ (4048) in an ahborne inhabitedcargo applkxdbn, case temperature

4Y’C, 75mW power deefpatim The device is pmwrad with normal marndacturetsscreening
consisting of terrperature oycflng, oomtant aooeleratbn, electrical testing, seal test and external
visual Owpectkm, in the seqMnce given. The oorrponent manufacturer also performs a B-1evel
bum-in folbwed by electrical testing. AU screens and tests are performed to the applicable MIL-
STD-883 screening method. The package is a 24 pin oeramic DIP with a glass seal. The device
has been manufactured for severaf years and has 1000 transistors.
Section 5.1
c1 = .020 1000 Transistor -250 Gates, MOS Cl Table, Digital Column
XT = .29 Determ\ne TJ from Sectbn 5.11

TJ = 48W + (28”@W)(.075w) = 50W
Determine ~T from Section 5.8, Digital MOS Column.
c~ = .011 Section 5.9
?tE = 4.0 Section 5.10
7CQ = 3.1 Seotion 5.10

Group 1 Tests 50 Points
Group 3 Tests (Blevel)
TOTAL 80 Points
XL = 1 Section 5.10
~= [ (.020)(.29) + (.011) (4)] (3.1)(1)= .15 Failure/106 l-lows
Example 2: EEPROM
Given: A 128K Flotox EEPROM that is expected to have a TJ of 80”C and experience 10,000
readhmite cycles over the life of the system. The part is procured to all requirements of
Paragraph 1.2.1, MIL-STD-883, Class B screenin level requirements and has been in
productbn for three years. tt b packagd in a 26 pin D7 P with a glass seal and will be used In an
airborne uninhabited oargo application.
~=(ClXT+C2YCE+~)nnL Sectbn 5.2
c1 = .0034 Section 5.2

XT = 3.8 Section 5.8
C2 = .014 Section 5.9

MIL-HDBK-217F
5.13 MICROCIRCUITS, EXAMPLES
~E = 5.0 Section 5.10

ICQ = 2.0 Section 5.10
XL ~ 1.0 Section 5.10
c= .38 Section 5.2:

b
A2B*
%[
~
=AIB1+~~~
= f32 = O for Fiotox

1
~ No ECC, %ECC = 1
A,=.l,7Ksc s15KEntry
81 .3.8 (Use Equation 1 at bottom of B1 and ~ Tabie)
(
~~ = ‘1 B, = (-1)(3.8) = .38
I
~= [ (.0034)(3.8) + (.014)(5.0)+ .38] (2.0)(1)= .93 Failures/106 Hours
Example 3: GaAs MMIC
Given: A MA4GM212 Single Pole Double Throw Switch, DC -12 GHz, 4 transistors, 4 inductors, 8
resistors, maximum Input PD = 30 ~, 16 pin hermetio flatpack, maxirrum TCH = 14WC m a
ground benign environment. rne part has been manufactured for 1 year and is screened to
Paragraph 1.2.1 of MIL-STD-883, Class B equivalent soreen.
Seotion 5.4
c1 = 4.5 Section 5.4, MMIC Table, 4 Active Elements (See Footnote to

Tabie)
.061 Section 5.8, TJ = TCH = 145°C
3.0 Section 5.4, UrhOwn Application
.0047 Section 5.9
%E = .50 Section 5.10
XL = 1.5 Section 5.10
7FQ - 2.0 Section 5.10
~= [(4.5)( .061) (3.o) + (.0047)(.5)] (1.5)(2.0) = 2.5 Failures/106 Hours
NOTE: The passive elements are assumed to contribute negligibly to the overall device failure rate.
Example 4: Hybrid
Given: A linear muttichip hybrid driver in a hermetically sealed Kovar package. The substrate is aiumina
and there are two thi@ film dielectric layers. The die and substrate attach materials are
conductive epoxy and soider, respectively. The application environment is navai unsheltered,
65°C case temperature and the device has been in production for over two years. The device is
5-21
MIL-HDBK-217F
5.13 MICROCJRCUJTS, EXAMPLES
screened to MIL-STD-883, Method 5008, in accmkwxe with Table Vlll, Class B requirements.
The hybrid contahw the followhg components:
Active Components: 1- LMl 06 Bipolar Co~rator-er Die (13 Transistors)

1- LM741A Bipolar Operational Arnpliir Die (24 Transistor)
2- S NPN Transistor
2- Si PNP Tmnsistor
2- Si General Purpose Diodes
Passive Components: 2 - Cerwlb c~ Capacitors

17 - Thick FItm Resistors
+ -~E) %F ~ ~ Sectbn 5.5
1. Estimate Active Device Junction Terrperatures
If limited informationis available on the specific hybtid materials and construction characteristics
the defautt case-to-junction temperature rises shown in the introduction to Section 5.12 can be
used. When detailed information becmmes available the following Section 5.12 procedure
shoukf be used to determine the junction-to-case (tlJc) thermal resistance and TJ vatues for
each component.
,,c = w A
(Equatbn 1)
~
()()
Ki
Li
Layer Fgure 5-1 Feature

in2 OC/W
Silicon Chip A .0045

Conductive Epoxy B .023
Two Dielectric Layers c (2)(.0045) = .009
Alumina Substrate D .039
Solder Substrate Attachment E .0023
Kovar Case F
A = Die Area= [ .00278 (No. Die Active Wire Terminals) + .0417J2 (Equation 2)
TJ = Tc + OJC ‘D (Equation 3)
5-22

—
MIL-HDBK-217F
5.13 MICROCIRCUITS, EXAMPLES
LM 106 LM741A Si NPN s PNP lSi Diode’ Source
No. of Pins 8 14 3 3 2 Vendor Spec. Sheet
Power Dissipation,
pD (W)
Area of Chpjin.2)
I
.33
.0041
I
.35
.0065
I
.6
.0025
.6
.0025
II .42
.0022
CircaJitAnalysis
Ey. 2 Above
e~ (w 30.8 19.4 50.3 50.3 56.3 Equ. 1 Above
‘J (~) 75 72 95 95 89 Ew. 3 Above
2. Calculate Failure Rates for Each Corrqmnent:
A) LM106 DM, 13 Transistors (from Vendor Spec. Sheet)
~=[c,q+c~Yc~l~Qq Section 5.1
Because C2 = O;
= Cl XT ~Q XL ~T: s-h 5.8; ~Q, ZL Default tO 1.0
‘P
= (.01)(3.8)(1)(1) = .038 Failures/106 Hours
B) LM741 Die, 23 Transistors. Use Same Procedure as Above.
= Cl XT Z* XL = (.01)(3.1)(1)(1) = .031 Failures/106 Hours

$
c) Silicon NPhl Transistor, Rated Power= 5W (From Vendor Spec. Sheet), Vc#VCEO = .6,
Linear Application
~ = %“PA’R%KQ’E s8CtiOn 6.3; ZQ, ~E Defautt to 1.0

= (.00074)(3.9)(1 .5)(1 .8)(.29) (l)(1)
= .0023 Failures/l 06 Hours
D) Silicon PNP Transistor, Same as C.
.0023 Failures/106 Hours
E) Silicon General Purpose Diode (Anabg), Vottage Stress= 60%, Metallurgically Bonded
Construction.
%’T%~nQ% Section 6.1; nQ, XE Default to 1.0

(.0038)(6.3)(.29)(1)(1)(1)
.0069 Failures/l 06 Hours
5-23
I ,. 1
I
. . .. . . .
MIL-HDBK-217F
[
5.13 MICROCIRCUITS, EXAMPLES .
F) Ceramic ChipCapacitor, Voltage Stress= 50%.,

‘A “ ‘CASE for the Hybrid, 1340 pF, 125°C Rated Tenp
I
% = %%V%)’E Section 10.1 1; xQ, fiE Default to 1.0

= (.0028)(1.4)(1)(1)
= .0039 Faitures/106 Hours
G) Thiok Film Resistors, per kwtructbns in Section 5.5, the contribution of these devices is
considered insiinifiint relative to the overall hybrid failure rate and they maybe ignored.
[XbJc~c](l+2@ItF~q
6.0 Section 5.10

5.8 Section 5.5
1 Section 5.10
1 Section 5.10
[ (1)(.038)+ (1)(.031)+ (2) (.0023)+ (2) (.0023)

+ (2)(.0069) + (2)(.0039) ](1 + .2(6.0)) (5.8) (1)(1)
1.3 Failures/l 06 Hours
5-24

f
... . . . . . . . . . .. . . . ... . . .. ..— .- ..!.
MIL-HDBK-217F
6.0 DISCRETE SEMICONDUCTORS, INTRODUCTION
The semiconductor tmnsistor, dbde and opto-electronic devke sections present the faWe rates on
the basis ofdevketypeand cmstwtbn. An mafytbd -I of the talbre rate is also presented for each
devke category. The various types of dkcrete semkmductor devkes require different failure rate
models that vary to some degree. The models apply to single devices unless otherwise noted. For
mh**v-rn as@k_t~~ti h~ti5.5*Mb Md.
The applicable MIL specification for transistors, and optoelectronk devices is MIL-S-19500. The
quality levels (JAN, JANTX, JANTXV) are as defined in MIL-S-19500.
The t~p9mtWt3 faCtOr (%T) is based on the devke jumtbn temperature. Junctbn temperature
should be oomputed based on worse case power (or maxhmm power c!ksipatbn) and the device junction
to ease thermal resktanoe. Determinatbn of junction temperatures is explained in Section 6.14.
I
I
Refererwe 28 should be consulted for further detailed information on the mode!s appearing in this
I
section.
6-1
MIL-HDBK-217F
I —
6.1 DIODES, LOW FREQUENCY
SPECIFICATION DESCRIPTION
MlL-S-l 9500 @ Frecpxmqr D-s: General Putpse Analog, Switch~
Fast Rewvery, f%wer RecWer, Tmsient S~r, Current
Regulator, Vol@e Regulator, Voltage Reference
Lp = &##czQzE
Failures/l OG Hours
Base Failure Rate - & Temperature Factor - q

Diode Type/Appiicatbn “ ~ (VOitag. Regulator, Voitqo Rdormce,
h cun’UWRncddYW)
—.- ---- . ... . -~---. #
TJ (“C) %T ‘J (’=)
General PuqxM Analog .0038 v
switching .0010
Power Redfiir, Fast Recovery .069 25 1.0 105 3.9
Power Rectifier/Schottky .0030 30 1.1 110 4.2
Power Diode 35 1.2 115 4.5
Power Rectifier with .0050/ 40 1.4 120 4.8
HigiI Voltage Stacks Junction 45 1.5 125 5.1
Transient Suppressor/Vanstor .0013 50 1.6 130 5.4
Current Reguiator .0034 55 1.8 135 5.7
Voltage Regulator and Voltage .0020 60 2.0 140 6.0
Reference (Avaianche 65 2.1 145 6.4
and Zener) I 70 2.3 150 6.7
i
75 2.5 155 7.1
80 2.7 160 7.5
Terrperature Factor - XT
85 3.0 165 7.9
(General Purpose Analog, Switching, Fast Recovery, 90 3.2 170 8.3
Poul r Rectifier, TI dent Su-pgm isor)
95 3.4 175 8.7
TJ (’C) XT TJ ~C) XT 100 3.7
25 1.0 105 9.0

30 1.2 110 10 1 1
%T = exp -1925
35 1.4 115 11 TJ +273-=
40 1.6 120 12 (( ))
45 1.9 125 14 TJ . JunctionTemperature (oC)
50 2.2 130 15
55 2.6 135 16
60 3.0 140 18
65 3.4 145 20
70 3.9 150 21
75 4.4 155 23
80 5.0 160 25
85 5.7 165 28
90 6.4 170 30
95 7.2 175 32
100 8.0
1 1
XT =
((
exp -3091
TJ + 273 -Z&
))
TJ - JunctionTemperature (“C)
6-2

+. .,
MIL-HDBK-217F
6.1 DIODES, LOW FREQUENCY
Electrical Stress Factor - ZS Quality Factor - X(

Stress I 7CS Quality tcQ
Transient Suppressor, JANTXV 0.7

Voltage Regulator, Voltage
Reference, Current JANTX 1.0
Regulator 1.0
JAN 2.4
All Others: Lower 5.5

v~ s .30 0.054
Plastic 8.0
.3 c v~ s .40 0.11
.4< Vs s .50 0.19
.5<v#60 0.29
.6< Vs s .70 0.42
.7< V~ s .80 0.58 Environment Factor - ZE
.8< V~ s .90 0.77 Environment 7tE
.9<v#. oo 1.0
GB 1.0
GF 6.0
For All Except Transient Suppressor, Voltage 9.0
%
Regulator, Voltage Reference, or Current N~ 9.0
Regulator
Nu 19
7CS= .054 (Vs s .3) 13
‘Ic
~s = v~2.43 (.3 < v+ 1) 29
‘IF
*UC 20
Voltage Applied
~~ = Voltage Stress Ratio = 43
Voltage Rated ‘UF
‘RW 24
Voltage is Diode Reverse Voltage
SF .50
MF 14
ML 32
Contact Construction Factor - xc
CL 320
Contact Construction I I@
Metallurgically Bonded 1.O

I
Non-Metallurgically Bonded and
I
2.0
Spring Loaded Contacts
6-3
MIL-I+DBK-217F
6.2 DIODES, HIGH FREQUENCY (MICROWAVE, RF)
MlL-S-l 9500 Si IMPA7T; Buk Effect, Gunn; Tunnel, Back; Mixer, Detector,
PIN, Schottky; Varactor, Step Recovery
Failures/l 06 Hours
Base Failure Rate - ~ Tenqxmtum Factor- %T

Dbde Type h
TJ ~)
Si lMPAIT (s 35 GHz) .22
Gunn/Bulk Effect .18 25 1.0 105 42
Tunnel and Bd (including 30 1.3 110 50
.0023 35 1.8 115
Mixers, Detectors)
PIN .0081 40
45
2.3
3.0
120
125 84
E
Schottky Barrier (including
Detectors) and Point Contact 50 3.9 130 99
(200 MHzs Frequenqs 35 GHz) .027 55 5.0 135 120
Vamctor and Step Recovery .0’025 60 6.4 140 140
65 8.1 145 160
70 10 150 180
75 13 155 210
80 16 160 250
Temperature Factor - q 85 19 165 280
(All Types Excq)t IMPA7T) 24 170 320
z 29 175 370
TJ (“C) XT TJ (oC) 100 35
25 1.0 105 4.4

30 1.1 110 4.8 1 1
35
40
45
1.3
1.4
1.6
115
120
125
5.1
5.5
5.9
‘T =
((
exp -5260
TJ + 273 -Zz
))
50 1.7 130 6.3 TJ = JunctionTemperature (“C)

55 1.9 135 6.7
60 2.1 140 7.1
65 2.3 145 7.6
70 2.5 150 8.0
75 2.8 155 8.5 Application Factor - fiA
80 3.0 160 9.0
85 3.3 165 9.5 Diodes Application I ~A
90 3.5 170 10
3.8 175 11 Varactor, Voltage Control .50
1: 4.1
Varactor, Mu?tip!ier 2.5
1 1 All Other Diodes 1.0

XT = exp -2100
TJ +273-~
(( ))
TJ = JunctionTemperature (“C)
6-4

.- .-. ,,. . ,.
MI-HDBK-217F
6.2 DIODES, HIGH FREQUENCY (MICROWAVE, RF)
Power Rating Factor - XR Quality Factor - ~

Rated Power, Pr (Watts) (Scha ky)
Quaiity’ %
PIN Diodes
p~ < 10 .50 JANTXV .50
10 < Pr s 100 1.3 JANTX 1.0
IOO<Pr Sl~ 2.0
JAN 1.8
1000 <Pr S3000 2.4
Lower 2.5
All Other Diodes 1.0 Plastic
Pthl Diodes Iqq = .326 k(Pr) -.25 ● For high frequency part classes notspecified
to
MlL-S-l 9500 equipmentqualityclasses are
defined ae devices meeting ths Same
All Other Diodes XR = 1 .0 requirementsas MlL-S-l 9500.
Environment Factor - z=
Quaiity Factor - nQ
Environment ~E
(All Ty pas Except Scl
I Quality” GB 1.0 t
I
GF 2.0
JANTXV .50
% 5.0
JANTX 1.0
Ns 4.0
JAN 5.0 Nu 11
Lower 25 Ac 4.0
Plastic 50 ‘IF 5.0
*UC 7.0
● For high frequency part classes not spedfied to ‘UF 12

Ml L-S-l 9500 equipmentqualhyclassesare
defined as devbes meeting the same ‘RW 16
raqulrementsas MlL-S-l 9500.
SF .50
..
MF 9.0
ML 24
CL 250
6-5

MIL-HDBK-217F
●
✎
✎
6.3 TRANSISTORS, LOW FREQUENCY, BIPOLAR —
MIL-S-19500 NPN (Frequency< 200 MHz)
PNP (Frequency< 200 MHz)
Ap = Failures/l 06 I-loufs
%? ‘AXR%ZQXE
Base Failure Rate - ~ Application Factor - %A
I Type I h
Application I %A
Linear Ampliiicatiorl 1.5

I NPN and PNP
I
.00074
Switching .70
Power Rating Factor - ZR

..
TJ (*) XT T J (“C) - %T
Rated Power (Pr, W~S) ?tR
25 1.0 105 4.5

30 1.1 110 4.8 Pr~ .1 .43
35 1.3 115 5.2
40 1.4 120 5.6 Pr = .5 .77
45 1.6 125 5.9
50 1.7 130 6.3 Pr =1.0 1.0
55 135 6.8
60 ;:: 140 7.2 Pr = 5.0 1.8
145 7.7
% 5:: 150 8.1
Pr = 10.0 2.3
75 2.8 155 8.6
80 3.0 160 9.1
165 9.7 Pr = 50.0 4.3
E ::: 170 10
95 3.9 175 11 P~ = 100.0 5.5
100 4.2
Pr -500.0 10
1 1 I
XT = exp -2114
TJ + 273 -=
(( )) Rated Powers .lW
%-. *
TJ = Junclbn Temperature (“C) ~ - (Pr).37 Rated Power >.1 W
6-6

I .l@ I -
.
MIL-HDBK-217F
6.3 TRANSISTORS, LOW FREQUENCY, BIPOLAR
Voltage Stress Factor - YCS Erwironment Factor - ~F

I
Applied vCE/Rabd VCEO - ~~ Environment %E
GB 1.0
o<v #.3 .11
GF 6.0
.3<v~s.4 .16
.4<v @.5 .21 % 9.0
.5c V~S.6 .29 Ns 9.0

.6< V#.7 .39 N“ 19
.7<v @.0 .54
AC 13
.8< V#.9 .73
‘IF 29
.9< v~ s 1.0 1.0
AM 20
—~~
‘UF 43
% - ,045 exp (3.1(vS)) (o<v#l.o)
‘RW 24
v~ . Applied VCE / Rated VGEO
SF .50
VCE = Voltage, Collector to Emitter MF 14
ML 32
Voltage, Colleotor to Emitter, Base
‘CEO -
Open CL 320
Quality Factor - ZQ
Quality I 7c~
JANTXV .70
JANTX 1.0
JAN 2.4
Lower 5.5
Plastic 8.0
6-7

MIL-HDBK-217F
6.4 TRANSISTORS, LOW FREQUENCY, SI FET
SPECIFICATION DESCRIPTl ON
MIL-S-19500 N-Channel and P-Channel Si FET (Frequencys 400 MHz)
Ap = kb7cT7cA7tQ7cE
Failures/l 06 Hours
Base Failure Rate - ~ Application Factor - ~A

●
Transistor Type Application

%
(Pr, Rated Output Power)
I I :::5I
MOSFET
Linear Amplifkxtion
JFET (Pr < W)
small S@rlal Switching .70

Temperature Factor - n~
T ~ (“C) TJ (“C) XT Power FETs
*T (Non-linear, Pr z 2W)
25 1.0 105
1.1 110 ::; 2< Pr<5W 2.0
E 1.2 115 4.5
40 1.4 120 4.8 5<Pr<~W 4.0
45 1.5 125 5.1
50 1.6 130 5.4
55 135 5.7 50 s Pr < 250W 8.0
60 ;:: 140 6,0
65 2.1 145 6.4 Pr > 25OW 10
70 2.3 150 6.7
75 2.5 155 7.1
80 2.7 160 7.5
85 165 7.9
90 u 170
Environment Factor - x=
8.3
95 3.4 175 8.7 I Environment I xc
100 3.7
* A GB 1.0
GF 6.0
1 1
nT = exp - 1925
TJ + 273 -izii GM 9.0
(( ))
NS 9.0
TJ = Junction Temperature (“C)
Nu 19
1
Alc 13
Quality Factor - ~
‘IF 29
Ouality 7CQ
*UC 20
JANTXV .70 43
*UF
JANTX 1.0 24
*RW
JAN 2.4 SF .50
Lower 5.5 MF 14
Plastic ML 32
8.0
CL 320
b-U

I 1=-IO I =1 I
MIL-HDBK-217F
6.5 TRANSISTORS, UNLIUNCTION
MIL-S-19500 Unijunction Transistors
Lp = kb7cT7TQ7cEFailures/l OG Hours
Base Failure Rate - ~ Quality Factor - ~

Quality %Q
All Unijuntilon .0083 JANTXV .70

I I
JANTX 1.0
JAN 2.4
Temperature Factor - XT
Lower 5.5
T ~ (“C) ~T TJ (“C) XT
Plastic 8.0
25 1.0 105 5.8
30 1,1 110 6.4
35 1.3 115 6.9
Environment Factor - XE
—
40 1.5 120 7.5
45 1.7 125 8.1 Environment %E
50 1.9 130 8.8
55 2.1 135 9.5 GB 1.0
60 2.4 140 10 GF 6.0
65 2.7 145 11
70 3.0 150 12 %/l 9.0
75 3.3 155 13
80 3.7 160 13 9.0
85 4.0 165 14 Nu 19
90 4.4 170 15
95 4.9 175 16 AC 13
100 5.3
‘IF 29
‘Uc 20
1 1
nT = exp -2483 43
TJ + 273 -m *UF
(( ))
*RW 24
TJ = Junction Temperature (°C) SF .50
MF
I
ML 32
CL
L
6-9

I I <1 I
4
MIL-HDBK-217F
6.6 TRANSISTORS, LOW NOISE, HIGH FREQUENCY, BIPOLAR
MIL-S-19500 Bipolar, Micmvave RF Transistor
(F~ency >200 MHz, Power< lW)
kp = ‘b~z#&QKE Failures/l 06 Hours
Applkatlon Note: The model applies to a single die (for multiple die use the hybrid model). The model does
apply to ganged transistors on a single die.
Power Rating Factor - Xn
..
Base Failure Rate - & R~6d ~ (Pr, W~S) %R
I
1
— Pr < .1 .43
I I I .l<Pr 5.2 .55
I All Types
I
,18
I
.2< PrS.3
.3< Pr $.4
.64
.71
.4< PrS.5 .77
Temperature Factor - q .5< Pr~.6 .83
.6< PrS.7 .88
TJ (“C) XT TJ W) - XT
.7< PrS.8 .92
.8< Pr <.9 .96
25 1.0 105 4.5
30 1.1 110 4.8
35 1.3 115 5.2 7KR..43 P~ S.lw
40 120 5.6
45 ;:; 125 5.9
50 1.7 130 6.3 ~ = (Pr )“37 Pr >.lW
I
55 6.8
60 ;:: :Z 7.2
65 2.3 145 7.7
70 2.5 150 0.1 Voltage Stress Factor - x~
75 2.8 155 8.6 Applied VCE/R~ed VCEO
80 3.0 160 9.1 %
85 3.3 165 9.7
3.6 170 10 o<v #.3 .11
E 3.9 175 11 .3 <V=s .4 .16
100 4.2
.4<v #.5 .21
.5< V#.6 .29
1 1 .6< V8S.7 .39
XT = exp -2114
TJ +273-=
(( )) .7< VSS .8 .54
.8<v~s.9 .73
TJ = JunctionTemperature (oC)
.9< v~ s 1.0 1.0
% - .045 exp (3.1(vS)) (o< v~ s 1.0)
v~ - Applied VCE / Rated VC~
v= - Vottage, Collector to Emitter
‘CEO = Voltage, Collector to Emitter, Base

Open

I I
,, . .. !.,
MIL-HDBK-217F
6.6 TRANSISTORS, LOW NOISE, HIGH FREQUENCY, BIPOLAR
Quality Factor - ~ Environment Factor - ~F

Quality 7tQ Environment ~E
GB 1.0
JANTXV .50
GF 2.0
JANTX 1.0
GM 5.0
JAN 2.0 Ns 4.0
Lower 5.0 Nu 19
Alc 4.0
NOTE: For these devices, JANIXV quatii class must
inciude IR Scan for die attach and scraan for barrier %F 5.0
layer pinhotes on gold metallized devices.
‘Uc 7.0
‘UF 12
‘RW 16
SF .50
MF 9.0
ML 24
CL 250
6-11

I
MIL-HDBK-217F
6.7 TRANSISTORS, HIGH POWER, HIGH FREQUENCY, BIPOLAR
M! L-S-19500 Power, Mkrowave, RF Bipolar Transistors
(Average Power 21 W)
%= %%XAXM%ZE ‘ail”res/lo’‘O”’s
Base Failure Rate - ~

.
Frequency Output Power (Watts)
I (GHz) 1.0 5.0 10 50 100 200 300 400 500 600 1
s 0.5 .038 .039 .040 .050 .067 .12 .20 .36 .62 1.1
.046 .047 .048 .060 .080 .14 .24 .42 .74 1.3
; .065 .067 .069 .086 .11 .20 .35
3 .093 .095 .098 .12 .16 .28
4 .13 .14 .14 .17 .23
I 5 .19 ,19 .20 .25
lb x .032 exp(.354(F) + .00558(P)) F= Frequency (GHz) p = OUtp@POwer W) I
I
NOTE: Output power refers to the power level for the overall packaged device and not to indwidual transistors within the
package (if more than one transistor is ganged together). The output power represents the power output from the active
device and should not account for any duty cycle in pulsed applications. Duty cycle iS accounted for when determining ‘A.
Temperature Factor - XT Temperature Factor - nT

(Gnlri
\ --!.-
Mdalli7atinn\
. . . . . . . . ..- . . . . .
/Aliiminllm
,,, ,”, ,?, .F”, .,
Matalli7atinn\
. ..--.,,-- ., W..
Vs (VCE/BVCE@ Vs (VCE/BVCES)
TJ (“C) s .40 .45 .50 .55 TJ (~) s .40 .45 .50 .55
sl 00 .10 .20 .30 .40 Sloo .38 .75 1.1 1.5
110 .12 .25 .37 .49 110 .57 1.1 1.7 2.3
120 ,15 .30 .45 .59 120 .84 1.7 2.5 3.3
130 .18 .36 .54 .71 130 1.2 2.4 3.6 4.8
140 .21 .43 .64 .85 140 1.7 3.4 5.1 6.8
150 .25 .50 .75 1.0 150 2.4 4.7 7.1 9.5
160 .29 .59 .88 1.2 160 3.3 6.5 9.7 13
170 .34 .68 1.0 1.4 170 4.4 8.8 13 18
180 .40 .79 1.2 1.6 180 12 18
190 .45 .91 1.4 1.8 190 ?:; 15 23 $:
200 .52 1.0 1.6 2.1 200 30 40
1 1
1 1 XT = .38exp -5794 TJ +273 - = ‘
‘T = .1 exp -2903 TJ +273 - = ‘ (( ))
(( )) (VS s .40)
(VS < .40)
1 1
nT = ?.55 (VS - .35) exp -5794 TJ + 273 - ~ ,
1
- z (VS - .35) eXP -2903 TJ ~ 273
))
‘T -m ‘ ((
(( )) (.4 < Vs s .55)
(.4 < v~ s .55)
v= - VCE / BVCES
v~ = VCE / BVCES
VCE = Operating Voltage (Votts)
VCE . Operating Voftage (volts)
BVCES = Collector-Emitter Breakdown
BVCES = Collector-Emitter Breakdown Voltage with Base Shorted to
Voftage with Base Shorted to Emitter (Votts)
Emitter (Volts) TJ = Peak Junction Temperature (“C)
TJ = Peak Junction Temperature (“C)
6-12

I
-+
MIL-HDBK-217F
6.7 TRANSISTORS, HIGH POWER, HIGH FREQUENCY, BIPOLAR
Application Factor - ~A Quality Factor - ~ —
Application Duty Factor Quality ZQ

N/A
JANTXV .50
Pulsed s 1’% .46
5!% .70 JANTX 1.0
1 0%+40 1.0
15% 1.3 JAN 2.0
20% 1.6
25% 1.9 Lower 5.0
2 30% 2.2
N07E: For these devices, JANTXV qualityclass
= 7.6, CW must IncludeIR Scan for die attach and screenfor
7tA
barrier layer pinholes on gold metaltized devices.
n~ = .06 (Duty Factor 0/0) + .40, Pulsed
Environment Factor - zcb

Environment ~E
Matching Network Factor - fiM
Matching ~M GB 1.0
GF 2.0
Input and Output 1.0
GM 5.0
Input 2.0 4.0
Ns
None 4.0 Nu 11
4.0
‘Ic
5.0
‘IF
7.0
*UC
12
‘UF
16
*RW
SF .50
MF 9.0
ML 24
CL 250
6-13

.- . I
. . . .
m-a -l.... _._. —. -“ —. -- -- -- -- m AAM” .-.
MIL4-IDBK-217F
.
6.8 TRANSISTORS, HIGH FREQUENCY, GaA, FET
MIL-S-19500 Galls Low Noke, Driver and Power FETs (2 lGHz)
Base FaihJre Rate - ~
Average Output Power (Watts)

<.1 .1 .5 1 2 4 6
1 .052 -- -.
4 .052 .054 .&6 .084 .14 .36 .96
5 .052 .083 .10 .13 .21 .56 1.5
6 .052 .13 .16 .20 .32 .85 2.3
7 .052 .20 .24 .30 .50 3.5
0 .052 .30 .37 .47 .76 ;::
9 .052 .46 .72 1.2
10 .052 .71 :: 1.1 1.8
% “ .052 1< F<1o, P<.1
%= .0093 exp(.429(F) + .486(P)) 4sFs1o, .ls Ps6
F- Frequency (GHz) p. Average Output Power (Watts)
The average output power represents the power output from the active device and should not account for any duty
cycle in pulsed applications.
Temperature Factor - m Application Factor - XA

Tc (=) TC (C) %T Application (Ps 6W) I ~A
25 1.0 24 1
30
35 1.6
1.3 M
115
28
33
All Low Power and Pulsed
4
40 2.1 120 38
45 125 44
50 $:; 130 50
55 4.0 135 58 P = Average Output Power (Watts)
60 4.9 140 66
65 5.9 145
70 7.2 150 E
7s 8.7 155 97
80 10 160 110
85 12 165 120
90 15 170 14’0
95 175 150
100 ;7
h -
((
‘Xp ‘4485 &3-L 298
))
TC = Channel Temperature (“C)
U-14

MIL-HDBK-217F
6.8 TRANSISTORS, HIGH FREQUENCY, GaAs FET
Matching Network Factor - ~M Environment Factor - xcL
~M Environment [ ~E
Matching
1.0
%3
Input and Output 1.0
GF 2.0
Input Only 2.0 5.0
%
None 4.0 NS 4.0
N“ 11
4.0
%c
Qualiiy Factor- ICQ % 5.0
Quality 7.0
~Q *UC
12
*UF
JANTXV .50
‘RW 16
JANTX 1.0 SF .50
JAN 2.0 MF 7.5
ML 24
Lower 5.0
CL 250

MIL-HDBK-217F
6.9 TRANSISTORS, HIGH FREQUENCY, Si FET
MIL-S-19500 Si FETs (Avg. Power< 300 mW, Freq. >400 MHz)
~ = &Tz@E Failures/l OGHours

Transistor Type A~ Quality
I MOSFET
I
.060 JANTXV .50
I JFET
I .023 JANTX 1.0
JAN 2.0
Lower 5.0
Temperature Factor - m
TJ (“C) XT 7tT
25 1.0 105 3.9

30 1.1 110 4.2
35 1.2 115 4.5 Environment Factor - ~=
L
40 1.4 120 4.8 Environment xc

I I
45 1.5 125 5.1
50 1.6 130 5.4 GB 1.0
55 1.8 135 5.7
60 2.0 140 6.0 GF 2.0
65 2.1 145 6.4
70 2.3 150 6.7 GM 5.0
75 2.5 155 7.1
80 2.7 160 7.5 N~ 4.0
85 3.0 165 7.9
N“ 11
90 3.2 170 8.3
95 3.4 175 8.7
AIC 4.0
100 3.7
‘IF 5.0
1 1 7.0
‘T = exp
((
- 1925
TJ + 273 -E
))
‘Uc
*UF 12
TJ = Junction Temperature (“C) ‘RW 16
SF .50
MF 9.0
ML 24
CL 250
6-16

MIL-HDBK-217F
6.10 THYRISTORS AND SCRS
MIL-S-19500 Thyristors
SCRS, Triacs
Failures/l 06 Hours
Base Failure Rate - ~ Current Rating Factor - ~R
I Device Type I Lb I Rated Forward Current

‘ffms (Amps)
I All Types
I
.0022
I .05 .30
,10 .40
.50 .76
Temperature Factor - q 1.0 1.0
5.0 1.9
TJ (%) TJ(%) -
10 2.5
20 3.3
25 1.0 105 8.9 30 3.9
30 1.2 110 9.9 40 4.4
35 1.4 115 11 50 4.8
40 1.6 120 12 60 5.1
45 1.9 125 13 70 5.5
50 2.2 130 15 80 5.8
55 2.6 135 16 90 6.0
60 3.0 140 la 100 6.3
65 145 19 110 6.6
70 ::: 150 21 120 6.8
75 4.4 155 23 130 7.0
80 5.0 160 25 140 7.2
85 5.7 165 27 150 7.4
90 6.4 170 30 160 7.6
95 7.2 175 32 170 7.8
100 8.0 175 7,9
1 1 m = ($rmJ”40
~T = exp
((-3082
TJ + 273 -m
))
+rms =
RMS Rated ForwardCurrent (Amps)
6-17

MIL-HDBK-217F
.
. .
6.10 THYRISTOf?S AND SCRS —
Voltage Stress Factor - XC

w
Environment Factor - XC
L
V~ (Blocking Voltage Applied/ Environment %E

BlockingVottage Rated) Xs 1.0
%
GF 6.0
v~ s .30 .10
.3<v #.4 .18 % 9.0
.4<v #.5 .27 NS 9.0
.5< V#.6 .38
NU 19
.6< V#.7 .51
Alc 13
.7< V@.8 .65
.8< V~S.9 .82 ‘IF 29
.9 < v~ s 1.0 1.0 20

‘Uc
‘UF 43
%J 24
7CSD.1O (VS s 0.3)
SF .50
1.9
~s = (Vs) (VS> 0.3) MF 14
ML 32
cL 320
Quality Factor - ZQ
Quality ZQ
!
JANTXV 0.7
JANTX 1.0
JAN 2.4
Lower 5.5
Plastic 8.0
6-18

. .
MIL-HD6K-217F
6.11 OPTOELECTRONICS, DETECTORS, ISOLATORS, EMITTERS
MIL-S-19500 Photodetectors, Opto-isolators, Emitters
Failures/l 06 Hours
Base Faiture Rate - & Quality Factor - ZQ
OptoelectfonkType - Quality YCQ

%
Photodetectors JAW .70
Photo-Transistor .0055
Photo-Diode .0040 JANTX 1.0
Opto-isolators JAN 2.4

Photodbde Output, Si@e Device .0025
Photot:aosistor Output, Single Device .013 Lower 5.5
Photodarlington Output, Single Device ,013

Plastic 8.0
Light Sensitive Resistor, Single Devioe .0064
Photodiode Output, Dual Device .0033
Phototransistor Output, Dual Device .017
Environment Factor - n
Photodarlington Output, Dual Device .017
Environment ~E
Lght Sensitive Resistor, Dual Device .0086
GB 1.0
Emitters
.0013 GF 2.0
Infrared Light Emitting Diode (IRLD)
LightEmittingDiode (LED) .00023 GM 8.0
Ns 5.0
Temperature Factor - ~T
N I 12
TJ (“C) XT TJ (“C) XT
‘Ic 4.0
25 1.0 75 3.8 ‘IF 6.0

30 1.2 80 4.3
1.4 85 4.8 ‘Uc 6.0
35
40 1.6 90 5.3 8.0
45 1.8 95 5.9 ‘UF
50 2.1 100 6.6 ‘RW 17
55 2.4 105 7.3
60 2.7 110 8.0 SF .50
65 3.0 115 8.8 MF 9,0
70 3.4
ML 24 ;
I
1 1 c1 450
ttT = exp -2790 <
TJ +273-~
(( ))
6-19

I
MIL-HDBK-217F
I
6.12 OPTOELECTRONICS, ALPHANUMERIC DISPLAYS —
SPECIFICATION DESCRIPTION .
MIL-S-19500 ~numedc Display
Failures/l 06 Hours
% “ &T’QzE
Base FaihJre Rate - & Tenqwature Factor - q

Number
d
% “+) TJ (“C) ~T TJ (%) %T
Charactws 25 1.0 75 3.8

30 1.2 80 4.3
1 .00043 .00026 35 1.4 85 4.8
1 whgk Chip .00047 .00030 40 1.6 90 5.3
2 .00066 X)0043 45 1.8 95 5.9
2 W/b@C Chip .00090 .00047
50 2.1 100 6.6
3 .0013 .00060
3 Wlhxjo chip .0013 .00064 55 2.4 105 7.3
4 .0017 .00077 60 2.7 110 8.0
4 w/Logic Chip .0018 .00081 65 3.0 115 8.8
5 .0022 .00094 70 3.4
6 .0026 .0011
7 .0030 .0013 1 1
8
9
10
.0034
.0039
.0043
.0015
.0016
.0018
%T = exp
((
-2790
TJ + 273 -ZE
))
.0047 .0020 TJ = Junction Temperature ~C)

:; .0052 .0021
13 .0056 .0023
14 .0060 .0025
15 .0065 .0026
Environment Factor - xc
~ - .00043(C)+ ~C, for Segment Displays Environment
~. .00009+ .00017(C)+ ~C, Diode Array Displays 1.0
c= Number of CharaAers 2.0
.000043 for Displays with a Logic Chip % 8.0

%-
- 0.0 for Displays without Imgic Chip Ns 5.0
NOTE: The numbar of characters in a display is the Nu 12

number of characters mntained in a _ sealed
AC 4.0
package. For example, a 4 character display
comprising 4 separately packaged single characters 6.0
mounted together would be tine character dispiays, ‘IF
not 1-four character display. 6.0
%c
*UF 8.0
Quality Factor - ~
17
I Quality lcQ
.50
JANTXV 0.7
MF 9.0
JANTX 1.0
ML 24
JAN 2.4
Ci 450
Lower 5.5
Plastic 8.0
6-20
---- ------ --------

—
MIL-HDBK-217F
6.13 OPTOELECTRONICS, LASER DIODE
MIL-S-19500 laser Diodes with Optical Flux Densities
<3 MW/cr# amt Fofward Cufrmt <25 ~
Failures/l 06 Hours
Forward Cument Factor, I

Forward Peak Current (Anps) q
.050 ~
.075 0.17
.1 0.21
.5 0.62
1.0 1.0
2.0 1.6
3.0 2.1
Temperature Factor - XT 4.0 2.6
5.0 3.0
TJ (“C) 10 4.8
15 6.3
25 1.0 20 7.7
30 1.3 8.9
35 1.7
40 2.1 q - (1)”68
45 2.7
50 3.3 I - Fonnmrd Peak Currant (Amps), I $25
55 4.1
60 5.1 NOTE: For VariaMa Current Souroes, use the Initial
65 6.3 Current Value.
70 7.7
75 9.3
Application Factor %A
Application Duty Cydo x~
1 1
XT = exp
((
-4635 TJ + 273 - ~
)) Pulsed 1 .1
.2
4.4
.32
.45
TJ = JunctionTemperature(“C) .3 .55
.4 .63
.71
:: .77
.7 .84
Quality Factor - ~ .8 .89
.9 .95
Quality 1-
Hermetic Package 1.0 ~A = 4.4, CW
Nonhermetic with Faoet Coating 1.0

%A = ~ Cycle 0-5,f%.i-d
NOTE: A duty cyclaof one in pulsed application
Nonhermetic without Facet Coating 3.3 represents the maximum amount it can ba driven in
a pulsad mode. This is different from wntinuous
wave applicationwhich will not withstandpulsed
oparatingIavels on a continuousbasis.

-.. 2
----- --———— ——4
I
J
MIL-HDBK-217F
. ..
6.13 OPTOELECTRONICS, LASER DIODE —
Environment Factor - fiE

Power ~radation Factor - np 9
ttE
Ratio P~P~ I %p
# I Environment [ 1
I 1.0
I
GB
0.00 .50
.05
.10
.53
,56
GF
I 2.0
8.0
.59 GM
.15
.20 .63 5.0
Ns
.25 .67
.30 .71 Nu 12
.35 .77
.40 .83 Ac 4.0
.45 .91
.50 1.0 6.0
‘IF
.55 1.1
1.3 6.0
.60 %c
.65 1.4 8.0
.70 1.7 ‘UF
.75 2.0 17
.80 2.5 ‘RW
.85 3.3 SF .50
.90 5.0
.95 10 MF 9.0
~ ML 24
1 450
lcp = ~ s .95
“PS
2 (1 -&
Ps = Rated Optical Power Output (rnW)
Pr = Required Optical Power Output (mW)
NOTE: Each laser diode must be replaced when power

output falls to Pr for fai lure rate prediction to be valid.
6-22
MIL-HDBK-217F
6.14 DISCRETE SEMICONDUCTORS, TJ DETERMINATION
Idealty, device case temperatures should be detetined from a detailed thermal anatysis of the
Wl@me~. D8Vb #.IndOn te~-m iS then ~M~ with tb folbwing relationship:
TJ = Tc + e~p
where:
TJ = Junction Temperature(%)
TC = Case Temperature (~). tf no thermal analysis exists, the defautt case

temperatures shown in Table ~1 should be assumed.
Junction-to-Case Thermal Resistance (“CAN). This parameter should be

determhwd from vendor, military specffkation sheets or Table 6-2, whiohever is
greater. It may also be estimated by taking the mclpmcal of the reconvnended
&wa!lng Ieve!. For examp!e, a devtce derating reconxnendatton of .16 W“ wou!d
restAina6K of6.250CAN. lf6wcannot bedetermhwd assurnea O~vabeof
7o”c/w.
P= Device Worse Case Power Diss@ation (W)
The models are not applicable to devices at overstress conditions. If the calculated junction temperature
is greater than the maximum rated junction temperature on the MIL slash sheets or the vendor’s
specifications, whichever is smaller, then the device is overstressed and these models ARE NOT
APPLICABLE.
Table 6-1: Default Caee Temperatures (Tc) for All Environments
Environment TC (“C)
I I
35
45
% 50
Ns 45
Nu 50
AC 60
‘IF 60
‘Uc 75
‘UF 75
*RW 60
SF 35
MF 50
ML 60
CL 45

MIL-HDBK-217F
6.14 DISCRETE SEMICONDUCTORS, T i DETERMINATION —
Table 6-2: Approximate Juriction-to-Case Thermal Resistance (6JC) for Semiconductor

Devices In Varfous Package Sizes”
Package Type OJC (“w Package Type Ok (%A#)
TO-1 70 TO-205AD 70
TO-3 10 TO-205AF 70
TO-5 70 TO-220 5
TO-8 70 5
TO-9 70 Do-5 5
TO-12 70 D07 10
TO-1 8 70 5
TO-28 5 Do-9 5
TO-33 70 DO-13 10
TO-39 70 DO-14 5
T041 10 Do-29 10
TO-44 70 Do-35 10
T046 70 DO-41 10
TO-52 70 DO-45 5
TO-53 5 DO-204MB 70
TO-57 5 DO-205AB 5
TO-59 5 PA-42A,B 70
TO-60 5 PD-36C 70
TO-61 5 PD-50 70
TO-63 5 PD-77 70
To-66 10 PD-180 70
TO-71 70 PD-319 70
TO-72 70 PD-262 70
TO-83 5 PD-975 70
TO-89 22 PD-280 70
TO-92 70 PD-216 70
TO-94 5 PT-2G 70
TO-99 70 PT-6B 70
TO-126 PH-13 70
TO-127 : PH-16 70
TO-204 10 PH-56 70
TO-204AA 10 PY-58 70
PY-373 70
“When available, estimates must be based on military specification sheet or vendor vaiues, whichever OJC
is higher.
6-24

MIL-HDBK-217F
6.15 DISCRETE SEMICONDUCTORS, EXAMPLE
Example
Given: Silicon dual transistor (complementary), JAN grade, rated for 0.25 W at 25”C, one side
onty, and 0.35 W at 25”C, both sides, with TM = 2000C, operating in linear service at
55°C case temperature in a sheltered naval environment. Side one, NPN, operating at
0.1 W and 50 percent of rated voltage and side two, PNP, operating at 0.05 W and 30
percent of rated voltage. The device operates at iess than 200 MHz.
Since the device is a bipolar dual transistor operating at low frequency (c200 Miiz), it falls into the
Transistor, Low Frequency, Bipoiar Grwp and the appropriate modei is given in %ction 6.3. Since the
device is a dual device, it is necessary to compute the faiiure rate of each side separately and sum them
t~e{k. Also, si~ OJc k uf’k~wn, OJc = 70%/w ~i~ be a~md.
Based on the given information, the following model factors are determined from the appropriate tables
shown in Section 6.3.
.00074
2.2 s@O1, TJ=TC+eJC %55+70( .1).62°c
2.1 Side 2, TJ = 55+ 70(.05) = 59°C
1.5
.68 Using equation shown with XR tabie, Pr = .35 W
.21 Side 1, 5070 Voltage Stress
.11 Side 2, 3(I?% Voitage Stress
2.4
9
$ = (.00074)(2.2)(1 .5)(.68) (.21)(2.4)(9) + (.00074)(2.1)(1 .5)(.68) (.1 1)(2.4)(9)

= .011 Faiiures/106 Hours
6-25

MIL-HDBK-217F
7.1 TUBES, ALL TYPES EXCEPT TWT AND MAGNETRON
DESCRIPTION
All Types Except Traveling Wave Tubes and Magnetrons.
Includes Receivers, CRT, Thyratron, Crossed Field Amplifier,
Pulsed Gridded, Transmitting, Vidicons, Twystron, Pulsed
Klystron, CW Klystron “
I ~ = kb7cLnE Failures/l 06 Hours

(Includes Both Rando[ and Wearout Failures)
Tube Type Lb Tube Type
Receiver Klystron, Low Power,
Tnode, Tetrode, Pentode 5.0 (e.a Local Oscillator) 30
Power Rectifier 10
Klystron, Continuous Wave*
Thyratron 50 3K3000LQ 9.0
Crossed Field Amplifier 3K50000LF 54
QK681 260 3K21OOOOLQ 150
SFD261 150 3KM300LA 64
Pulsed Gridded 3KM3000LA 19
2041 140 3KM50000PA 110
6952 390 3KM50000PA1 120
3KM50000PA2 150
Transmitting 4K3CC 610
Triode, Peak Pwr. s 200 KW, Avg. 75
4K3SK 29
Pwr, s 2KW, Freq. g 200 MHz 4K50000LQ 30
Tetrode & Pentode, Peak Pwr. 4KM50LB 28
100
s 200 KW, Avg. Power 5 2KW, 4KM50LC 15
Freq. S 200 KW 4KM50SJ 38
If any of the above limits exceeded 250 4KM50SK 37
4KM3000LR 140
Vidicon
4KM50000LCI 79
Antimony Trisulfide (Sb2S3)
4KM50000LR 57
Photoconductive Material 51 4KM170000LA 15
Silicon Diode Array Photoconductive 8824 130
Material 48 8825 120
Twystron 8826 280
VA144 850 VA800E 70
VA145E 450 VA853 220
VA145H 490 VA856B 65
VA913A 230 VA888E 230
Klystron, Pulsed”
4KMP1OOOOLF 43
8568 230 ● If the CW Klystron of interest is not listed above,
L3035 66 use the Alternate CW Klystron ~ Table on the
L3250 69
L3403
following page.
93
SAC42A 100
VA842 18
Z501OA 150
ZM3038A 190
● If the pulsed Klystron of interest is not listed above,

use the Alternate Pulsed Klystron Ab Table on
the following page.

MIL-I-IDBK-217F
7.1 TUBES, ALL TYPES EXCEPT TWT AND MAGNETRON —
Attemate* Base Failure Rate for Pulsed Klystrons - A Learning Factor - XI

F(GHz) T (years)
2.0 ‘L
Zs!&!L .2 .4 .6 .8 1.0 4.0 6.0 I
.01 16 16 16 16 16 16 <1 10
.30 16 16 17 17 17 18 ;: ;:
.80 16 17 17 18 18 21 25 30 2 2.3
1.0 17 17 18 18 19 22 28 34
3.0 18 20 21 23 25 34 51 >3 1.0
5.0 19 22 25 28 31 45 75
8.0 21 25 30 35 40 63 110
10 22 28 34 40 45 75
25 31 45 60 75 90 160 q = 10(T) -2”’, 1 sT<3
= 10, TsI
2.94 (F)(P) + 16 = 1,T23
+2=
F = Operating Frequency in GHz, 0.2s Fs 6 T = Numtw of Years since Introduction
P- Peak Output Power in MW, .01 s Ps 25 and to Field Use
P s 490 F-295
“See previous page for other Klystron Base Failure Environment Factor - nE
Rates.
Environment
GB
T
GF 1.0
Aftemate” Base Failure Rate for CW Klystrons - ~
GM 14
3K!!!!L N~ 8.0
0.1 30 31 33 34 38 47 57 66 Nu 24
31 32 33 34 39 48 57 66
;;; 32 33 34 35 40 49 58 %c 5.0
5.0 33 34 35 36 41 50
8.0 34 35 37 38 42 ‘IF 8.0
10 35 36 38 39 43
%c 6.0
30 45 46 48 49
50 55 56 58 59 12
80 70 71 73 ‘UF
100 80 81 40
‘RW
SF .20
%“ 0.5P + .00046F + 29
MF 22
P= Average Output Power in KW, 0.1 s Ps 100
ML 57
and Ps 8.0(10) 6( F)-1”7
F = Operating Frequency in MHz, CL 1000
300s Fs8000
●See previous page for other Klystron Base Failure

Rates.

MIL-HDBK-217F
7.2 TUBES, TRAVELING WAVE
DESCRIPTION
Traveling Wave Tubes
Xp = &E Failures/l 06 Hours
Environment Factor - XF
Base Failure Rate - & Environment ~E
Frequency (G-Hz)
Power (W) .1 1 2 4 6 8 10 14 18 GB 1.0
100 11 12 13 16 20 24 29 42 61
GF 3.0
500 11 12 13 16 20 24 29 42 62 GM 14
1000 11 12 14 16 20 24 29 43 62
3000 12 13 14 172125304465 Ns 6.0
5000 12 13 15 18 22 26 32 46 68
8000 13 14 16 19 23 20 33 49 72 N“ 21
10000 14~5~62024293551 75
15000 15 16 18 22 26 32 39 56 83 %c 10
20000 17 18 20 24 29 35 43 62 91
30000 20 22 24 29 36 43 52 76 110 14
‘IF
40000 25 27 30 36 43 53 64 93 140
11
‘Uc
‘UF 18
%= 11(1.00002)P (1.l)F
‘RW 40
p. Rated Power in Watts (Peak, if Pulsed), SF .10
.001< P s 40,000
MF 22
F = Operating Frequency in GHz, .3s Fs 18.
ML 66
If the operating frequency is a band, or two different
values, use the geometric mean of the end point CL 1000
frequencies when using table.
/-3

MIL-HDBK-217F
7.3 TUBES, MAGNETRON —
DESCRIPTION
Magnetrons, Pulsed and Continuous Wave (CW)
7c@@E Failures/l 06 Hours

%=%

Frequency (GHz)
Qs!!?!m .1 .5 1 5 10 20 30 40 50 60 70 80 90 100
.01 1.4 4.6 7.6 24 41 67 91 110 130 150 170 190 200 220
.05 1.9 6.3 10 34 56 93 120 150 180 210 230 260 280 300
.1 2.2 7.2 12 39 64 110 140 180 210 240 270 290 320 350
.3 2.8 9.0 15 48 80 130 180 220 260 300 330 370 400 430
.5 3.1 10 17 54 89 150 200 240 290 330 370 410 440 480
1 3.5 11 19 62 100 170 230 280 330 380 420 470 510 550
3 4.4 14 24 77 130 210 280 350 410 470 530 580 630 680
Pulsed Magnetrons: CW Magnetrons (Rated Power < 5 KW):

I
.73 ~pl.20
%) =
F =
‘9(F)
Operating Frequency in GHz, .1 s Fs 100 I A@8
P = Output Power in MW, .ol<p~5

I
Utilization Factor - q I Environment Factor - mr
Utilization (Radiate Hours/ Environment 1 nc
Filament Hours) 7CU
GB 1.0
0.0 .44
GF 2.0
0.1 .50
0.2 .55 GM 4.0
0.3 .61
0.4 .66 N~ 15
0.5 .72
Nu 47
0.6 .78
0.7 .83 10
*IC
0.8 .89
0!9 .94 ‘IF 16
1.0 1.0
*UC 12
‘UF 23
nu = 0.44 + 0.56R
*RW 80
R = Radiate Hours/Filament Hours
.50
MF 43
Construction Factor - m
u
Construction XC
ML 133
c, 2000
CW (Rated Power< 5 KW) 1.0
Coaxial Pulsed 1.0
Conventional Pulsed 5.4
/-4

MIL-HDBK-217F
8.0 LASERS, INTRODUCTION
. .
The models and failure rates presented in thk section apply to ~ , i.e., those items
wherein the Iasing action is generated and controlled. In addition to laser peculiar Items, there are other
assernbhes used with lasers that contain electronic parts and mechanical devices (pumps, valves, hoses,
etc.). The failure rates for these parts should be determined with the same procedures as used for other
electronic and mechanid devices in the equipment or system of which the laser is a part.
The laser failure rate models have been developed at the “functional,” rather than ‘piece part” level
because the available data were not sufficient for “piece part” model devebpment. Nevertheless, the
laser functional models are included in this Handbook in the interest of completeness. These laser
models will be revised to include piece part modek and other laser types when the data become available.
Because each laser family can be designed using a variety of approaches, the failure rate rnodets have
been structured on three basic laser functbns whii are common to most laser families, but may differ in
the hardware knplernentation of a given function. These functions are the Iasing rneda, the laser pumping
mechanism (or pump), and the coupfing method.
Examptes of media-related hardware and reliability Influencing factors are the solid state rod, gas, gas
pressure, vacuum integrity, gas mix, outgassing, and tube diameter. me electrical discharge, the
flashlamp, and energy level are exarr@es of pump-related hardware and reliabilii influencing factors. The
coupling function reliability influencing factors are the “Q” switch, mirrors, windows, crystals, substrates,
coatings, and level of dust protection provided.
Some of the laser models require the number of active optical surfaces as an input parameter. An active
opticai surface is one with which the laser energy (or beam) interacts. internally reflecting surfaces are not
counted. Figure 8-1 below illustrates examples of active optiil suffaces and count.
Tot* wloclw9 Mnuf
cho ActhmQxkalsurb20
Pdult
—.
b@u *am
Figure 8-1: Examples of Active Optical Surfaces
8-1

I
MIL-HDBK-217F
8.1 LASERS, HELIUM AND ARGON
DESCRIPTION
Helium Neon Lasers
Helium Cadmium Lasers
Argon Lasers
~ = ‘MED,AZE + ‘COUPLING n E Failures/l 06 Hours
..“
Lasing Media Failure Rate - kMEDIA Environment Factor - n=

b
Type Environment ~E
‘MEDIA
GB .30
He/Ne 84
GF 1.0
He/Cd 228 GM 4.0
Argon 457 N~ 3.0
Nu 4.0
4.0
%c
% 6.0
Coupling Failure Rate - ~0[ 7.0

----- lpi ,NG
...— ‘Uc
Types ‘UF 9.0
%OUpLING
‘RW 5.0
Helium 0
SF .10
Argon 6
MF 3.0
ML 8.0
NOTE: The predominant argon laser failure
CL NIA
mechanism is related to the gas media (as reflected
in XMEDIA; however, when the tube is refilled
periodically (preventive maintenance) the mirrors
(as part of ~OUpLIN@ can be expected to
deteriorate after approximately 104 hours of
operation if in contact with the discharge region.
‘COUPLING is negligible for helium lasers.
8-2

MIL-HDBK-217F
●-” “
8.2 LASERS, CARBON DIOXIDE, SEALED
DESCRIPTION
C02 Sealed Continuous Wave Lasers
Lasing Media FaiWe Rale - ~DM -.

Tube Current (rnA) Active OptW Surfaces ‘0s
I %UEDIA
10 240 1 1
20 930
30 1620 2 2
40 2310
50 3000
100 6450 ~S - Numbr of Active Optical SUrfaces
NOTE: Only *ive optical surfaoss ars

counted. An active optical surfaca is one with
%tEDIA - 69(1)-‘0
whiohth.laser anorgyorbwn~
Internallyreflecting surfaces are not oounted.
l= Ttitimti(mA), 10s Is15O Sae Fquro 8-1 for exampleson datorminingthe
number of optical surfaces.
Gas Overfill Factor = *

C02 Overfill Percent (%) %0
Environment Faotor - XE
o 1.0 Environment %E
25 .75 %3 .30
% 1.0
50 .50
GM 4.0
%-1 -.01 (%0Overfill)
Ns 3.0
Overfill percent is based on the psrwnt increase Nu 4.0
ovsr the o@imum002 partialpssure which is AC 4.0
normalIyintherango ofl.5t03Tm (llm=l
mm Hg Prassure) for mostsealad C02 lasers. ‘IF 6.0
*UC 7.0
*UF 9.0
Peroent of BaJlast ‘RW 5.0
Vohmetric Increase
sF .10
o 1.0 hu~ 3.0

50 .58 ML 8.0
100 .33
150 .19 c’ WA
200 .11
n~ - (1~) (% Vol. Inc./l 00)
U-3

MIL-HDBK-217F
8.3 LASERS, CARBON DIOXIDE, FLOWING —
DESCRIPTION
C02 Flowing Lasers
+J = &JpLIN&OS x E Failures/l OGHours
Coupling Failure Rate - XCWPL,NG Environment Factor - XE
Power (KW) Environment fiE

I %OUpLING
.01
.1
1.0
I 2
300
GB
GF
GM
.30
1.0
4.0
Ns 3.0
%OUPUNG” 3WP
NU 4.0
P _ Aver- PowerOutputin KW, .01 s Ps 1.0
*IC 4.0
Beyond the 1KW range other glass failure mechanisms
‘IF 6.0
b~in to predominate and alter the ~OUpLING values.
It should also be notedthat C02 flowinglaser optical 7.0
*UC
devices are the primary source of failure occurrence. 9.0
*UF
A tailored optical cleaning preventive maintenance 5.0
*RW
program on optic devices greatty extends iaser fife.
SF .10
MF 3.0
ML 8.0
Optical Surface Factor - ~S
CL NIA
Active Optical Surfaces I ‘0s
1 1
2 2
XOS - Number of Active Opticai Surfaces
NOTE: Oniy active optical surfaces are counted.

An active opticai surface is one with which the iaser
energy or beam interacts. Internally reflecting
surfaces are not counted. See Figure 8“1 for
exampies on determining the number of opticai
surfaces.
8-4

* ,..
MIL-HDBK-217F
8.4 LASERS, SOLID STATE, ND:YAG AND RUBY ROD
DESCRIPTION
Neocfymium-Ytt~m-AbminurnGamet (ND:YAG) Rod Lasers
Ruby Rod Lasers
+)= ( ‘p”~~ +‘MEDIA + 16.3 xc~s) ~E Failures/l 06 Hours
I Pump Pulse Failure Rate - kpuMp Pump Pulse Failure Rate - kpUM@
fXannn
1
-------- Fla=hlarrmm\
. --- . . . . .-,
IKnmtnn
,. ... ~.-.. Ftaehla~}
. .-w. ..-. .~v,
The empiricalfmula used to determine ~UMp The empirical formula used to determine *MP for
(Failures/1@ Hours) for Xenon lamps is: Ktypton lamp is:
~p - [625][,0(”$’9 1[km] Failures/l 06 Hours
+WMP = @~) (PPS) 2000 k 8058 kpUMp is the failure me contributionOf the krypton
[ (d,k) ] ~nm, flashlamp or flashtube. me flashlamps
evalutad herein are the continuouswave
@lJfvIp k the failure rate contribution of the xenon (CW) type and are most widely used for
flashlamp or flashtube. The flashlamps commercial solid state applkations. They
evaluated herein are linear types used for are approx-imatety7mm in diameter and 5 to
military solid state laser systems. Typical 6 inches brig.
defautt model parameters are given below.
P is the average input power in Idbwatts.
PPS is the repetition pulse rate in pulses per Default value: P =4.
second. Typbal values range between 1
and 20 pulses per second. L is the flashlamp or flashtube arc length in
inches. Defautt value: L -2.
Ej is the fkwhlamp or flashtube input energy
per pulse, in joules. Its value is determined Zca is the woling factor due to various cooling
from the actual or desgn input energy . For
media immediately surrounding the flashlamp
values less than 30 @Jes, use Ej = 30.
or fkht~. ~~L = 1 for a~ air or inert
Default value: E = 40.
j
gas cooling. n- -.1 for all liquid
d is the flashlamp or flashtube inside designs. Defautt va!ue: ~c~L = .1, liquid
diameter, in millimeters.
Default value: d = 4. cooled.
L is the flashlamp or flashtube arc length in

inches. Default value: L = 2. Meda Failure Rate - ~EDiA
Laser Type ‘MEDIA
t is the truncated pulse width in
microseconds. Use t -100 microseconds
for any truncatd pulse width exceeding 100 ND:YAG o
microseconds. For shotier duration pulses,
pulse width is to be measured at 10 percent R~ _ (3600) (PPS) [43.5 F2052~
of the maximum current amplitude. Defautt )
value: t = 100.
PPS is the number of pulses per second
xc~L is the cooling factor due to various cooling
F is the energy density in Joules per cm. z/pulse
media immediately surrounding the over the cross-sectional area of the laser
flashlamp or flashtube, ~~~L = 1.0 for beam, which is nominalty equivalent to the
cross-sectional area of the laser rod, and its
any air or inefl gas cooling, ~C@L = .1 for
value is determined from the actual design
ail liquid cooled designs. Default value: parameter of the laser rod utilized.
‘COOL = .1, Iquid cooled.
NOTE: ~MEDIA is negligible for ND:YAG lasers.
8-5

I
MIL-HDBK-217F
8.4 LASERS, SOLID STATE, ND:YAG AND RUBY ROD —
CouplingCleadinassFactor - -z Environment Factor “ ~E

—
CleardinessLovd Environment %E
%
GB .30
Rk3#ltml#c&&s ~-r- 1
GF 1.0
~d. BOUOWB
provided over
~ tin. GM 4.0
Mln&nalprmXw$Orwdwing opaning, 30 Ns 3.0

makltananoe, mpdr, and testing.
Bellows prddad Ovw Optkat train. Nu 4.0
Minimal pr~ons duringopening, 60 Ac 4.0

mdntorumca, repair,and ta8drg. No AF 6.0
tx?lbw, prOvWxfOvu ~ train.
7.0
%c
NOTE: Mhoughsodod qsternstendmberelMle 9.0
‘UF
OnoeCompatible materialshavebeenSeh30ted and
proven,extremecaremuststtltbe takento prevsnt ‘RW 5.0
theentranoeof partkdatesduringmanufacturing,
field ftashlamp repkemmt, or routine maintenance SF .10
repair. Contamhatkm is the major cause of solid
MF 3.0
state lasermatfurx3ion, and spedal provlsbns and
vigilanoe must oontirwalty be provided to maintain the ML 8.0
deanllness level required.
CL N/A
Optioal Surfaoe Factor - ~S

Active Optical Surfaces ‘0s
1 1
2 2
~s = Numbr of ActiveOptical Surfaces
NOTE: Only activeoptioalsurfmmsare munted.

Anactiveopticalsurfaceis one withwhid the iaser
energyor beam interacts.Internallyreflecting
surfacesare notcxxmted.See Figure8-1 for
examphw on dettinlng the number of OPUcat
surfaces.
8-6

. ,,, . .
9
MIL-HDBK-217F
9.0 RESISTORS, INTRODUCTION
This section includes the active resistor specificationsand, in addition, some eider/inactive specifications
are included because of the large number of equipments stilt in field use which oontain these parts.
The Established Reliability (ER) resktor family generaity has four qualification failure rate levels when
tested per the requirements of the appikabie specification. These quaiiitbn failure rate levels difier by
a factor of ten (from one level to the next). However, field data has shown that these failure rate levels
differ by a factor of about only three, hence the ~ values have been set accordingly.
The use of the resistor modek requires the calculation of the electrfcat power stress ratio, Stress =
-~ Pow@r/~t~~er,orPr~9.16 for variable msktors. The models have been structured
such that derating curves do not have to be used to find the base failure rate. The rated IXWer for the
stress ratb is ~al to the full nominal rated power of the resistor. For example, a MlL-R_ resistor has
the foiiowing derating cume:
100
80
60
40
20
0
0 40 80 120
AMBlENT TEMPERATURE IN
DEGREES CELSIUS
Figure 9-1: MIL-Ft-39006 Deratlng Curve
This particular resistor has a rating of 1 watt at 70”C arrtknt, or below. If Itwere behg used in an an’k#ent
temperature of 10O°C, the rated power for the stress calculation would still be 1 watt, ~ 45% of 1 watt (as
read off the curve for 100*C). Of course, while the deratlng cuwe k not needed to determine the base
failure rate, it nmst still be observed as the maxinum operating condtbn. To aid in detenMing if a resistor
is being used within rated conditions, the base failure rate tables show entries up to certain combinations
of stress and temperature. If a given operating stress and temperature point faits in the blank portion of
the base failure rate table, the resistor is ovemtmssed. Such wisappfbatbn wouid require an anatysis of
the circuit and operating conditions to bring the resistor within rated conditions.
9-1

I
MIL-I+DBK-217F
9.1 RESISTORS, FIXED, COMPOSITION
SPECIFICATION STYLE DESCRIPTION

MIL-R-39008 RCR Resistors, Fixed, Composition (Insulated), Established Reliability
MIL-R-11 RC Resistors, Fixed, Composition (Insulated)
Xp s kbXRXQnE Failures/l OGHours

stress- Quality 7CQ
TA (%) .1 .3 .5 .7 .9
s .03
0 .00007 .00010 .00015 .00020 .00028
10 .00011 .00015 .00021 .00030 ,00043
R 0.1
20 .00015 .00022 .00031 .00045 .00064
30 .00022 .00031 .00046 .00066 .00096
40 .00031 .00045 .00067 .00098 .0014 P 0.3
50 .00044 .00066 .00098 .0014 .0021
60 .00063 .00095 .0014 .0021 .0032 M 1.0
.00090 .0014 .0021 .0032 ,0048
;: .0013 .0020 .0031 .0047 MlL-R-l 1 5.0
90 .0018 .0029 .0045
100 .0026 .0041 .0065 Lower 15
110 .0038 .0060
120 .0054
Environment Factor - ~E
—
%=4.5x 10-gexp 12 Environment ~E
( (W))exff?(-))
GB 1,0
T= Ambient Temperature (“C)
GF 3.0
s= Ratio of Operating Power to Rated Power
GM 8.0
Ns 5.0
Nu 13
Resistance Factor - ~R ‘Ic 4.0
Resistance Range (ohms) ~R 5.0

‘IF
%c 7.0
<.l M 1.0
*UF 11
>.l Mtol M 1.1
‘RMI 19
>l.OMtol OM 1.6 SF .50
>1OM 2.5 MF 11
ML 27
CL 490
b
9-2

----- ——-- -— 1- r.llauLe Lila L aullclllu LAG u&uw*, .y” *u b..*-- ~-----
MIL-HDBK-217F
9.2 RESISTORS, FIXED, FILM

MIL-R-39017 RLR Fixed, Film, Insulated, Established Reliability
MIL-R-22684 RL Fued, Film, Insulated
MIL-R-55182 RN (R, C, or N) Fixed, Film, Established Reliability
MIL-R-105O9 RN Fixed, Film, High Stability
Failures/l OG Hours
Base Failure Rate - ~ Base Failure Rate - ~

IMIL-R-22684
....—.- —— and MIL-R-990171
-- ----- ...._ .._ --- . I
[MIL-R-1 0509 and MIL-R-551 82)
TA (%) .1 .3 .5 .7 .9 TA (Z: .1 .3 .5 .7 .9
0 .00059 .00073 .00089 .0011 .0013 o .00061 .00074 .00091 .0011 .0014
10 .00067 .00082 .0010 .0012 .0015
10 .00063 .00078 .00096 .0012 .0014
20 .00073 .00091 .0011 .0014 .0017
20 .00067 .00084 .0010 .0013 .0016
30 .00080 .0010 .0013 .0016 .0019
30 .00072 .00090 .0011 .0014 .0018 40 .00088 .0011 .0014 .0017 .0022
50 .00096 .0012 .0015 .0020 .0025
40 .00078 .00098 .0012 .0016 .0019
60 .0011 .0013 .0017 .0022 .0028
50 .00084 .0011 .0014 .0017 .0022
70 .0012 .0015 .0019 .0025 .0032
60 .00092 .0012 .0015 .0019 .0024 80 .0013 .0016 .0021 .0028
F
90 .0014 .0018 .0024 .0031 .0040
70 .0010 .0013 .0017 .0021 .0027
100 .0015 .0020 .0026 .0035 .0045
80 .0011 .0014 .0018 .0024
110 .0017 .0022 .0029 .0039 .0051
90 .0012 .0016 .0021 .0027 120 .0018 .0024 .0033 .0043 .0058
F
130
100 .0013 .0018 .0023
140
110 .0015 .0020 .0026 z~~ =; 0065
150 .0024 .0033 .0045
120 .0017 .0023 160 .0026 .0036
170 .0029
130 .0019
140 .0022
- ~= 5x10-5exp
(“(=Y”XPP
35
(-))
~=3.25x 104 .xp(*)’exf(=))
T. Ambient Temperature (°C)
s. Ratio of Operating Power to Rated Power

T = Ambient Temperature (oC)
S = Ratio of Operating Power to Rated Power NOTE: Do not use MlL-R-l 0509 (Characteristic B)
below the line. Points below are overstressed.
9-3

I
MIL-HDBK-217F
9.2 RESISTORS, FIXED, FILM
Resistance Factor - ~n,,

Environment Factor - ~
Resistance Range (ohms) lc~ b
Environment ~E
<.l M 1.0 GB 1.0
>().lMtOIM 1.1 GF 2.0
8.0
>l.OMtol OM 1.6
Ns 4.0
>IOM 2.5
Nu 14
*IC 4.0
QuaJ-~ Factor - ~ ‘IF 8.0

Quality lt~ *UC 10
*UF 18
s .03
R 0.1
%+/v 19
SF .20
P 0.3 MF 10
M 1.0 ML 28
MlL-R-l 0509 5.0

c, 510 I
MIL-R-22684 5.0
Lower 15
9-4

MIL-HDE3K-217F
9.3 RESISTORS, FIXED, FILM, POWER

MIL-R-11804 RD Fued, Film, Power Type
Ap = kb7cRz*7cE Failures/l OGHours
Base Failure Rate - ~ QuaIii Factor - ~

stress - Quality %Q
TA (%) .1 .3 .5 .7 .9 !
0
10
.0089
.0090
.0098
.010
.011
.011
.013
.013
.015
.015
I
I
MIL-SPEC
Lower
II 1.0
3.0
I
I
20 .0092 .010 .012 .014 .016
30 .0094 .010 ,012 .014 .017
40 .0096 .011 .012 .015 .017
50 .0098 .011 .013 .015
60 .010 .011 .013 .016 Environment Factor - x=
70 .010 .012 .014 .016 \
80 .010 .012 .014 .017 Environment
90 .011 .012 .015
100 .011 .013 .015 GB
110 .011 .013 .016
GF 2.0
120 .012 .014 .016
130 .012 .014 .017 10
140 .012 .014 GM
150 .013 .015 Ns 5.0
160 .013 .016
170 .014 .016 NU 17
180 .014
190 .015 *IC 6.0
200 .015
210 .016 ‘IF 8.0
&
*UC 14
7.33 x 10-3 exp 202
%= *UF 18
(- (*)2’) x
‘RW 25
,
‘xp((~) (=)”8’)’3 SF .50
T= Ambient Temperature (“C) MF 14
s= Ratio of Operating Power to Rated Power ML 36

C’ 660
Resistance Factor - ZR
Resistance Range (ohms) x~
lo to 100 1.0
I
> 100to 100K I 1.2
>lOOKtol
>lM
M
I
I
1,3
3.5
9-5

---
i’”’ . .
MIL-HDBK-217F
9.4 RESISTORS, NETWORK, FIXED, FILM

MIL-R-83401 Rz Resistor Networks, Fixed, Film
~= .00006 ~ ZNRZQXE Failures/106 Hours
Temperature Factor - XT Quality Factor - ~

.
TC (Z) Quality 7CQ
!
“1
25 1.0 80 8.3 I MIL-SPEC
I
30
35
40
1.3
1.6
1.9
85
90
9.8
11
13
I Lower
I
3
95
45 2.4 100 15
50 2.9 105 18
55 3.5 110 21 Envirmment Factor - n=
60 4.2 115 24
Environment ~E
5.0 120 27
% 6.0 125 31 GB 1.0
75 7,1
GF 2.0
GM 8.0
1
N~ 4.0
\“ )
Nu 14
Tc = Case Temperature (“C)
‘Ic 4.0
‘IF 8.0
NOTE: If Tc is unknown, it can be estimated as
follows: ‘Uc 9.0
‘UF 18
TC = TA + 55 (S)
‘RW 19
TA = Ambient Temperature (°C)
SF .50
Operating Power MF 14
s=
Package Rated Power
ML 28
Any device operating at TC > 125°C is overstressed.

c, 510
Number of Resistors Factor - ~NR
‘NR = Number of Film Resistorsin Use

I I
I NOTE: Do not include resistors that are not used. I
9-6

MIL-HDBK-217F
9.5 RESISTORS, FIXED, WIREWOUND

MIL-R-39005 RBR Fixed, Wlrewound, Accurate, Established Reliability
MIL-R-93 RB Fixed, Wirewound, Accurate
Xp = lbnRZQnE Failures/l OGHours

str13s - Quality 7tQ
TA (W) .1 .3 .5 .7 .9
s .030
0 .0033 .0037 .0CM5 .0s7 .0075
.0033 .0038 .0047 .0059 .0079 R .10
% .0034 .0039 .0048 .0062 .0084
30 .0034 .0040 .0050 .0066 .0090 P .30
40 .0035 .0042 .0052 .0070 .0097
50 .0037 .0043 .0055 .0075 .011
60 .0038 .0046 .0059 .0081 .012
M 1.0
70 .0041 .0049 .0064 .0089 .013
80 .0044 .0053 .0070 ,0099 .015 MIL-R-93 5.0
90 .0048 .0059 .0079 .011 .017
100 .0055 .0068 .0092 .013 .020 Lower 15
110 .0065 .0080 .011 .016 .025
120 .0079 .0099 .014 .021 .033
130 .010 .013 .018 .028
140 .014 Environment Factor - XE
m
Environment
(T+273)loexpp(T;g3) )15 GB
~. .0031 exp 398
GF 2.0
T- Ambient Temperature (oC) GM 11
s= Ratio of Operating Power to Rated Power N~ 5.0
Nu 18
Resistance Factor - ~R AC 15
Resistance Range (ohms) ~R 18
‘IF
*UC 28
Up to 10K 1.0
*UF 35
> 10Kto 100K 1.7
%w 27
>lOOKtol M 3.0
SF .80
>IM 5.0 MF 14
ML 38
c, 610
9-7

I ,, . . . . . ,, .
4
MIL-HDBK-217F
9.6 RESISTORS, FIXED, WIREWOUND, POWER

MIL-R-39007 Fixed, WireWound, Power Type, Established RelkbNty
MIL-R-26 Fixed, Wirewouruf, Power Type
~ = hb7c#Q7t~ Failures/l OGHours
Base Failure Rate - &. Resistance Factor - ZR

Stress (MIL-R-39007)
TA (“C) .1 .3 .5 .7 .9 Re istan ) Ra[ w * I
up ●s00 >1K s *75 >Iw >19(
1:
.0042
.0045
.0062
.0068
.0093
.010
.014
.016
.021
.024 Siyte
bsoc
1: z 7!3(
KkJ
1* I& &
20 .0048 .0074 .011 .017 .027
30 .0052 .0081 .013 .020 .031 1.0 1.0 1.2 1.2 1.6 1.6 1.6 NA
40 .0056 .0089 .014 .022 .035 71
50 .0081 .0097 .016 .025 .ti–
1.0 1.0 1.0 1.2 1.6 1.6 NA N/l
60 .0066 .011 .017 .028
74
70 .0072 .012 .020 .032
80 .0078 .013 .022 .037
1.0 1.0 1.0 1.0 1.2 1.2 1.2 1.6
90 .0085 .014 .025 .042
78
100 .0093 .016 .028 .048
110 .010 .018 ,031 .055 1.0 1.2 1.6 1.6 NA NA NA NA
120 .011 .020 .036 .063 80
130 .012 .022 .040
140 .014 .025 .046 1.0 1.6 NA NA NA NA NA NA
150 .015 .028 .052 81
160 .017 .032 .060 1.0 1.6 1.6 NA NA NA NA NA
170 .019 ,036 .068
82
180 .021 .040 .078
.023 .046
1.0 1.0 1.1 1.2 1.2 1.6 NA NA
X% .026 .052
84
210 .029 .059
220 .033 .068 1.0 1.0 1.4 NA NA NA NA MA
230 .037 .077 89
240 .042 .088
250 .047 ,10
260 .054
270 .061
280 .06 Quality Factor - nQ
290 .079
300 .091 Quality KQ
310 .10
s .03
R .10
~-M148eXP(~)2ex@) (=))
P .30
M 1.0
MIL-R-26 5.0
s= Ratio of Operating Power to Ftatad Power
Lower 15
NOTE: Do not use MlL-R-39oo7 Resistors below the

line. Points below are overstressed.
--
Y-u

MIL-HDBK:217F
9.6 RESISTORS, FIXED, WIREWOUND, POWER
Resistanm Factor - XR Environment Factor - ~

(MIL-R-2 Environment ~E
Resistance mge I ]ms)
GB 1.0
MIL-R-26 up >100 >1K >1OK *la >150K
s m to to b
100 IK ICM 100K I!iw J% GF 2.0
% 10
Rw 10 1.0 1.0 1.0 1.0 1.2 1.6
Rwll t .0 1.0 1.0 1.2 1.6 NA NS 5.0
RW12 1.0 1.0 1.2 1.6 M NA
Rw 13 1.0 1.0 1.0 2.0 NU 16
Rw 14 1.0 1.0 1.0 2.0 E E
Rw 15 1.0 1.0 2.0 ‘Ic 4.0
RW16 1,0 1.2 ;:: NA E K
RW20 1.0 1.0 1.6 NA NA NA ‘IF 8.0
Rw 21 1.0 1.0 1.2 2.0 NA WA 9.0
1.0 1,0 1.2 1.6 NA NA ‘Uc
KE 1.0 1.0 1.0 1.4 NA NA 18
RW 24 1.0 1.0 1.0 1.2 NA NA
*UF
RW 29 1.0 1.0 1.4 ‘Rw 23
RW30 1.0 1.2 1.6 I& K E
Rw 31 1.0 1.0 1.4 NA NA NA SF .30
RW32 1.0 1.0 1.2 NA NA NA
1.0 1.0 1.0 1.4 MF 13
ZE 1.0 1.0 1.0 1.4 $ E
ML 34
1.0 1.0 1.0 1.4 NA NA
EE 1.0 1.0 1.2 1.5 NA CL 610
Rw 37 1.0 1.0 1.2 1.6 NA $
1.0 1.0 1.0 1.4 1.6 NA
E: 1.0 1.0 1.0 1.4 1.6 2.0
Rw 47 1.0 1.0 1.0 1.4 1.6 2.0
RW55 1.0 1.0 1.4 2.4 NA NA
RW56 1.0 1.0 1.2 2.6 NA
RW 67 1.0 1.0 1.0 K
1.0 1.0 1.0 E K
l%: 1.0 1.0 NA NA E NA
Rw 70 1.0 1.2 1.4 W NA NA
Rw 74 1.0 1.0 1.6
Fw 70 1.0 1.0 ;:: 1.6 E K
1.0 1.0 1.4 NA NA
R: 1.0 1.2 1.6 NA K
RW 81 1.0 1.2 NA NA E NA
9-9

MIL-HDBK-217F
9.7 RESISTORS, FIXED, WIREWOUND, POWER, CHASSIS MOUNTED

MIL-R-39009 RER Fixed, Wirewound, Power Type, Chassis Mounted,
Established Reliability
. MIL-R-18546 RE Fixed, Whewound, Power Type, Chassis Mounted
Base Failure Rate - ~ Resistance Factor - ZR

stress - (Characteristic G (tnductive Winding ti MlL-R-l 8546 and
TA (Z) .1 .3 .5 .7 .9 Kmotr lL-R- 1009)
mos I 10 hms
Rated T + +*1
0 .0021 .0032 .0049 .0076 .012 Styte Powar to c) XIK
10 .0023 .0036 .0056 .0087 .014 IK z IOK 2%
20 .0025 .0040 .0064 .0100 .016

30 .0020 .0045 .0072 .012 .019 RE 60 5 1.0 1.2 1.2 1.6 NA NA
40 .0031 .0050 .0082 .013 .022 RER60
50 .0034 .0056 .0093 .016 .026
.018 RE 65 10 1.0 1.0 1.2 1.6 NA NA
60 .0037 .0063 .011
70 .0041 .0070 .012 .021 RER65
80 .0045 .0079 .014 .024
RE 70 20 1.0 1,0 1.2 1.2 1.6 NA
90 .0050 .0088 .016 .028
100 .0055 .0098 .018 .032 RER70
110 .0060 .011 .020
RE 75 30 1.0 1.0 1.0 1.1 1.2 1.6
120 .0066 .012 .023
130 .0073 .014 ,026 RER75
140 .0081 .015 .030
RE 77 75 1.0 1.0 1.0 1.0 1.2 1.6
150 .0089 .017 .034
160 .0098 .019
170 .011 .022 RE 80 120 1.0 1.0 1.0 1.0 1.2 1.6
I
180 .012 .024
190 .013 .027
200 .014 .030
210 .016 Resistance Factor - XR
220 .017
(Charaderistic N (NoninductiveWinding)of MIL-R-18546
230 .019
and Noninc ctively Woun Styles of MIL 3-39009)
240 .021
Resi: mce Ran e
250 .023
Raled -qr T!mi 4
4 Styb Ptxer to 20K
52) lK E 1;
~ = .00015 exp 2.64 RE 60 5 1.0 1.2 1.6 NA NA NA

( (%)ex(a’a) RER40
T= Ambient Temperature (“C) RE 65 10 1.0 1.2 1.6 NA M M

RER45
s= Ratio of Operating Power to Rated Power
RE 70 20 1.0 1.0 1.2 1.6 NA NA
RER50
RE 75 30 1.0 1.0 1.1 1.2 1.4 NA

RER55
75 1.0 1.0 1.0 1.2 1.6 NA
RE 80 120 1,0 1.0 1,0 1.1 1.4 NA

!.
,,. .
MIL-HDBK-217F
9.7 RESISTORS, FIXED, WIREWOUND, POWER, CHASSIS MOUNTED
Quality Faotor - ~ Environment Factor - ~
Quality Environment ~E
GB 1,0
s .030
GF 2.0
R .10 10
GM
P .30 Ns 5.0
1.0 Nu 16
M
4.0
MIL-R-18546 5.0 AIc
8.0
‘IF
Lower 15
9.0
‘Uc
18
*UF
23
‘RW
SF .50
MF 13
ML 34
c~ 610
9-11

MIL-FIDBK-217F

M IL-T-23648 RTH Thermally Sensitive Resistor, Insulated, Bead, Disk
and Rod-Types
Xp = &QzE Failures/l OG Hours
Base Failure Rate - ~ — Environment Factor - xz

L
Type A~ Environment ~E
GB 1.0
Bead .021
(Styles 24, 26,28,30,32, GF 5.0
34, 36, 38, 40)
% 21
Disk .065 Ns 11
(Styles 6,8, 10)
Nu 24
Rod .105
‘Ic 11
(Styles 12, 14, 16, 18,
20, 22, 42) 30
‘IF
16
‘Uc
‘UF 42
‘RW 37
Quality Factor - fl~
SF .50
Quality ~Q
MF 20
MIL-SPEC 1 ML 53
Lower 15 c, 950
9-12

....,. .. . . .. .. . . .,. . . . . .. . .,, ..
*.
i
1
MIL-tiDBK-217F
9.9 RESISTORS, VARIABLE, W! REWOUND

I MIL-R-39015 Iv-R Variable, Wtrewound, Lead Screw Actuated,
MIL-R-27208 RT Variable, Wkewound, Lead Screw Actuated
Xp = kbfiTAp~XRZvXQzE Failures/l OG Hours
Base Failure Rate - ~ Potentiometer Taps Factor - q~o=

snr g
stress N N N
TAPS ‘TAPS TAPS ‘TAPS TAPS ‘TAPS
.1 .3 .5 .7 .9
3 1.0 13 2.7 23 5.2
I o .0089
.0094
.011
.012
.013
.014
.016
.017
.020
.021
4 1.1 14 2.9 5.5
5 1.2 15 3.1 z 5.8
; .010 .012 .015 .019 .024 6 1.4 16 3,4 6.1
30 .011 ,013 .017 .021 .026 7 1.5 17 3.6 E 6.4
40 .012 .015 .018 .023 .029 a 1.7 18 3.8 6.7
50 .013 .016 .020 .026 .033 9 1.9 19 4.1 :: 7.0
60 ,014 .018 .023 .029 .037 10 2.1 20 4.4 30 7.4
70 .016 .020 .026 .033 .043 11 2.3 21 4.6 31 7.7
80 .018 .023 .03 .039 .050 12 2.5 22 4.9 32 8.0
90 .021 .027 .035 .046 .060
100 .024 .032 .042 .055
110 .029 .038 .051
120 .035 .047 2
130 .044 .059 =’
140 .056 + 0.792
%APS = 2S
l-- .
‘TAPS =
Number of PotentiometerTaps,
%
-
0062”’’(=?’‘X’(S
(T=); includingthe Wiper and Terminations. ~
I
T - Ambient Temperature (“C) Voltage Factor - xv
s = Ratio of Operating Power to Rated Power. Applied Voltage*

See Section 9.16 for Calculation of S. Rated Voltage ‘%
Otoo.1 1.10
>0.1 to 0.2 1.05
>0.2 to 0.6 1.00
Resistance Factor - XR >0.6 to 0.7 1.10
>0.7 to 0.8 1.22
I Resistance Range (ohms)
I % >0.8 to
>0.9 to
0.9
1.0
1.40
2.00
10t02K 1.0
w ~RpApplied
>2K to 5K 1.4 Applied =
>5K to 20K 2.0 R = Nominal Total Potentiometer

Resistance
‘Applied = Power Dissipation
40 Volts for RT 26 and 27

‘Rated -
v 90 Votts for RTR 12, 22 and 24; RT 12

Rated =
and 22

MIL-HDBK-217F
9.9 RESISTORS, VARIABLE, WIREWOUND 7
QualityFactor - nfi Environment Factor - KG

u L
Quality %Q Environment ~E
I
1.0
s .020 %
GF 2.0
R .060
%... 12
P .20 Ns 6.0
M .60 Nu 20
MIL-R-27208 3.0 ‘Ic 5.0
‘IF 8.0
Lower 10
‘Uc 9.0
‘UF 15
‘RW 33
SF .50
MF 18
ML 48
cl 870
9-14

I .! .,,
/ MIL-HDBK-217F
1
9.10 RESISTORS, VARIABLE, WIREWOUND, PRECISION

MIL-R-12934 RR Variable, WIrewound, Precision
Base Failure Rate - ~ Resistance Factor -

R
stress Resistance Range (ohms)
.1 .3 .5 .7 .9 ‘R
o .10 .11 .12 .13 .14 100 to IOK 1.0

.11 .12 .13 .14 .15
E
30
.12
.13
.13
.14
.14
.16
.16
.17
.17
.19
>?OK to 20K 1.1
40 .14 .15 .J7 .20 .22 >20K to 50K 1.4

50 .15 .17 .20 .22 .26
60 .17 .19 .22 ‘ .26 ,30 >50K to 10OK 2.0
70 .19 .22 .26 .30 .36
80 .21 .25 .30 .36 .43
90 .24 .30 .36 .44 .54
>100 K to 200K 2.5
100 .28 .35 .44 .54
110 .33 .42 .54 >200K to 500K 3.5
120 .40 .52
130 .49 .65
140 .60
Potentbrneter Taps Factor -
?AP:
N
‘TAPS TAPS ‘TAPS ‘TAPS
-.0735 exp ( 1.03 (~ )4.45)X
\
1.0 13 5.2
1.1 14 $:; 5.5
exp((z%) (*)351) 1.2 15 5.8
1.4 16 ::: 6.1
T= Ambient Temperature ~C) 1.5 17 3.6 6.4
18 3.8 6.7
s. Ratio of Operating Power to Rated Power. ;:: 19 4.1 7.0
See Section 9.16 for Calculating S. 2.1 20 4.4 7.4
::: :; ::: ;;:

ConstructionClass Factor - z=
b
3
ConstructionClass I 7K*
M5
f
.(-),,,
RR0900AZA9J1 03” ‘%APS = 25 .

2.0
Number of Potentiometer Taps,
3 1.0 ‘TAPS -
including the W@er and Terminations.
4 3.0
5 1.5
“ Sample type designation to show how

construction class can be found, In this example
the construction cJass is 2. Construction class
should always appear in the eighth position.

MIL-HDBK-217F
9.10 RESISTORS, VARIABLE, WIREWOUND, PRECISION —
Vottage Factor - ~ Quality Factor - XQ

*
Applied Voltage’ Quality UQ
Rated voltage ‘%
MIL-SPEC 2,5
o to 0.1 1.10
Lower 5.0
>0.1 to 0.2 1.05
>0.2 to 0.6 1.00

Environment Factor - n=
>0.6 to 0.7 1.10
Environment
L
>0.7 to 0.8 1.22

GB 1.0
>0.8 to 0.9 1.40 GF 2.0
>0.9 to 1.0 2.00 GM 18
Ns 8.0
“v Nu 30
Applied ==
*IC 8.0
RP - Nominal Total Potentiometer
‘IF 12
Resistance
*UC 13
9 Power Dissipation
‘Applied
*UF 18
v 250 Votts for RR0900, RRI 100,
Rated = *RW 53
RR1300, RR2000, RR3000,
RR31OO, RR3200, RR3300, SF .50
RR3400, RR3500
MF 29
v . 423 Volts for RR3600, RR3700 ML 76
Rated
CL 1400
500 Votts for RR1 000, RR1 400,
‘Rated -
RR21 00, RR3600, RR3900
9-16

— ————
MIL-HDBK-21 ;F
9.11 RESISTORS, VARIABLE, WIREWOUND, SEMIPRECISION

MIL-R-19 RA Variable, Wirewound, Semiprecision (Low Operating
Temperature)
MIL-R-39002 RK Variable, WWnvound, Semiprecision
kp = +)~A#R’f/nQn Failures/l E
06 Hours
Base Failure Rate - ~ Resistance Factor - ZR

I stn?ss “ Resistance Range (ohms)
I % 1
‘A(~) .1 .3 .5 .7 .9
10t02K 1.0
0 .055 .063 .072 .083 .095
10 .058 .069 .081 .095 .11 >2K to 5K 1.4
20 .063 .076 .092 .11 .13
>5K to 10K 2.0
30 .069 .086 .11 .13 ,17
40 .076 .098 .13 .16 .21
50 .085 .11 .15 .20 .27
Potentiometer Taps Factor - ~APq
60 . . ..-
70 N N N
80
I 90
:6,1=
.16 .26 .42 .69 1.1
3 1.0 13 2.7 23 5.2
I
100 .19 .34 .59 1.0 4 1.1 14 2.9 24 5.5
110 .24 .45 .85 5 1.2 15 3,1 25 5.8
120 .31
6 1.4 16 3.4 26 6.1
130 .42
) 7 1.5 17 3.6 27 6.4
8 1.7 18 3.8 28 6.7

= .0398 exp 514
\ (- (%)5””).
9 1.9 19 4.1 29 7.0
e+% (*)446 ) 10 2.1 20 4.4 30 7.4
11 2.3 21 4.6 31 7.7

12 2.5 22 4.9 32 8.0
s- Ratio of Operating Power to Rated Power,
See Section 9.16 for S Calculation.
2
NOTE: Do not use MlL-R-l 9 below the line. Points MS + 0.792
below are overstressed. ?APS “ 25

‘TAPS =
including the Wiper and Terminations.
9-17

MIL-HDE3K-217F
9.11 RESISTORS, VARIABLE, WIREWOUND, SEMIPRECISION —
Vottage Factor - ~ Environment Factor - z=

L
Applied Voltage* Environment

Rated Voltage %
GB 1.0
Otoo.1 1.10 GF 2.0
>0.1 to 0.2 1.05 GM 16
N~ 7.0
>0.2 to 0.6 1.00
Nu 28
>0.6 to 0.7 1.10
Alc 8.0
>0.7 to 0.8 1.22
12
‘IF
>0.8 to 0.9 1.40 N/A
%c
>0.9 to 1.0 2.00 ‘UF N/A
38
‘RW
SF .50
●V -
Applied =
MF N{A
Rp Nominal Total Potentiometer
ML N/A
Resistance
CL NIA
Power D~ssipation
‘Applied -
v 50 Votts for RA1o

Rated
75 Volts for RA20X-XC, F
130 Volts for RA30X-XC, F
175 Volts for RA20X-XA
275 Volts for RK09
320 Volts for RA30X-XA
Quality Factor - n=
I Quality
MIL-SPEC 2.0
Lower 4.0
9-18

I I I I I I I I I I #u 1 .UUIE .Ulz .UEU

MIL-HDBK-217F
9.12 RESISTORS, VARIABLE, WIREWOUND, POWER

MIL-R-22 RP Variable, Whwound, Power Type
%= &~Ap#R~ZcZ&EFailures/IO’ H..,.
Base Failure Rate - ~ Resistance Factor - nR

Sm?ss “ I Resistance Range (ohms) I ‘R
TA (%) .1 .3 .5 .7 .9
1 to 2K 1.0
0 .064 .074 .084 .097 .11
>2K tO 5K 1.4
10 .067 .078 .091 .11 .12 >5K to 10K 2.0
20 .071 .084 .099 .12 .14
30 .076 .091 .11 .13 .16 Potentiometer Taps Factor - ~APS

., .,-
40 .081 .099 .12 .15 N N N
50 .087 .11 .14 .17 1.0 13 5.2

3 2.7 23
60 .095 .12 .15 4 1.1 14 2.9 5.5
24
70 .10 .14 .18 1.2 15
5 3.1 25 5.8
80 .12 .15 6 1.4 16 3.4 26 6.1
90 .13 .18 7 1.5 17 6.4
3.6 27
100 .15 8 1.7 18 3.8 28 6.7
110 .17 1.9 19 7.0
9 4.1 29
120 .20 10 2.1 20 4.4 30 7.4
~
11 2.3 21 4.6 31 7.7
= .0481 exp 334 12 2.5 22 4.9 32 8.0

\ ( (T:%)4’6)X
exp(+ (TJ~~)2083)
2
us + 0.792
T. Ambient Temperature (“C) %APS = 25
s= Ratio of Operating Power to Rated Power. Number of Potentiometer Taps,

See Section 9.16 for S Calculation. ‘TAPS =
including the W@er and Terminations
9-19

. .-. .A --, I i
I
I MIL-HDBK-217F
9.12 RESISTORS, VARIABLE, WIREWOUND, POWER
Voltage Factor - ~ Quality Factor - XQ

Applied Voltage* Quality
I
~Q
Rated Voltage ‘%
Otoo.1 1.10
MIL-SPEC
Lower
I 2.0
4.0
>0.1 to 0.2 1.05 I
>0.2 to 0.6 1.00
>0.6 to 0.7 1.10 Environment Factor - ZE

\
>0.7 to 0.8 1.22 Environment
I ~E
GB 1.0
>0.8 to 0.9 1.40
GF 3.0
>0.9 to 1.0 2.00
GM 16
Ns 7.0
●v ~RPpApplied
Applied = Nu 28
Rp = Nominal Total Potentiometer Alc 8.0
Resistance 12
‘IF
= Power Dissipation N/A

‘Applied ‘Uc
‘UF N/A
= 250 Volts for RP06, RP1 O
‘Rated 38
*RW
= 500 Votts for Others SF .50
MF N/A
I
ML WA
cL NIA
Construction Class Factor - ~ . b
Construction Style - Xc
Class
Enclosed RP07, RP1l, RP16

I 20 I
II
Unenclosed All Other Styles are 1.0
Unenclosed
9-20

.
MIL-HDBK-217F .
9.13 RESISTORS, VARIABLE, NONWIREWOUND

MIL-R-22097 RJ Variable, Nonwifewound (Adjustment Types)
MIL-R-39035 RJR Variable, Nonwirewound (Adjustment Types),
Failures/l 06 Hours
% = ‘b%APS’R%%’E
Base Failure Rate - & Resistance Factor - mR
TA (%) .1 .3
smss
.5
- .7 .9
Resistance Range (ohms)
‘R
0 .021 .023 .024 .026 .028 10 to 50K 1.0

.021 .023 .025 .027 .030
;: .022 .024 .026 .029 .031 >50K to 100K 1.1
30 .023 .025 .028 .030 .033
40 .024 .026 .029 .032 .036 >IOOK to 200K 1.2
50 .025 .028 .031 .035 .039
60 .026 .030 .033 .038 .043 >200K to 500K 1.4
70 .028 .032 .036 .042 .047
.030 .035 .040 .046 .053
>500K to 1 M 1.8
% .034 .039 .045 .053 .061
I 100 .038 .044 .052 ,061
110 .043 .051 .060
120 .050 .060 Potentiometer Taps Factor -
130
‘%APS
.060 .073
N N N
140 .074 TAPS ‘TAPS TAPS ‘TAPS TAPS ‘TAPS
I
I 3 1.0 13 2.7 23 5.2
= .019 exp (. 445 (Il&y)x 4 1.1 14 2.9 24 5.5

\
5 1.2 15 3.1 25 5.8
.xP(&(T;;r) 246)
6 1.4 16 3.4 26 6.1
T= Ambient Temperature (“C) 7 1.5 17 3.6 27 6.4
s = Ratio of Operating Power to Rated Power. 8 1.7 18 3.8 28 6.7

9 1.9 19 4.1 29 7.0
10 2.1 20 4.4 30 7.4
11 2.3 21 4.6 31 7.7
12 2.5 22 4.9 32 8.0
2
MEf + 0.792
hAPS = 25

‘TAPS = ,
9-21

I
1I
MIL-HDBK-217F
9.13 RESISTORS, VARIABLE, NONWIREWOUND —
Voltage Factor - ~ Environment Factor - xc

L
Applied Voltage” Environment ~E

Rated Voltage *v
GB 1.0
Oto 0.8 1.00 GF 3.0
>0.8 to 0.9 1.05 % 14
N~ 6.0
>0.9 to 1.0 1.20
Nu 24
Alc 5.0
“v ==
Applied
‘IF 7.0
Rp = Nominal Total Potentiometer 12
AUc
Resistance
‘UF 18
‘RW 39
v = 200 Votts for RJ and RJR26; SF .50

Rated
RJ and RJR50 MF 22
= 300 Volts for All Others ML 57

* 1000
c1
Quality Factor - G
Quality
s .020
R .060
P .20
M .60
MIL-R-22097 3.0
Lower 10
9-22

———__ .— _ _
MIL-HDBK-217F
9.14 RESISTORS, VARIABLE, COMPOSITION

MIL-R-94 RV Variable, Composition, Low Precision
Lp = ‘#TAp&#f/nQnE Failures/l OG Hours

I
Base Failure Rate - ~ Resistance Factor - Xn

..
Stress Resistance Range (ohms)
TA (%) .1 .3 .5 .7 .9
o .027 .030 .032 .035 .038 50 to 50K 1.0
10 .028 .031 .034 .038 .042 >50K to lOOK 1.1
20 .029 .033 .037 .042 .048 >1OOKto 200K 1.2
30 .031 .036 .041 .048 .056 >200K to 500K 1.4
40 .033 .039 .047 .056 .067

>500K tO 1 M 1,8
50 .036 .044 .054 .067 .082
60 .039 .050 .065 .083 .11

Potentiometer Taps Factor - ~AP:
70 .045 .060 .08 ,11 .14
N N N
TAPS ‘TIW TAPS ‘TAPS TAPS ‘TAPS
80 .053 .074 .10 .15
7
3 1.0 13 2.7 23 5.2
90 .065 .096 ,14
4 1.1 14 2.9 24 5.5
100 .084 .13
5 1.2 15 3.1 25 5.8
110 .11
6 1.4 16 3.4 26 6.1
7 1.5 17 3.6 27 6.4

= .0246 13XP [. 459 (*)9.3-)X
%
0 1.7 18 3.8 28 6.7
.xp(&(w)” ) 9 1.9 19 4.1 7.0
29
10 2.1 20 4.4 30 7.4

T- Ambient Temperature (“C)
11 2.3 21 4.6 31 7.7
s = Ratio of OperW!ng Power to Rated Power,
See Section 9.16 for S Calculation. 12 2.5 22 4.9 32 8.0
?APS -
MEr+07,2
25 .

‘TAPS =
9-23

MIL-HDBK-217F
9.14 RESISTORS, VARIABLE, COMPOSITION
Voltage Factor - ~ Environment Factor - XE

Applied Voltage* Environment ~E
Rated Voltage %
GB 1.0
o to 0.8 1.00 GF 2.0
>0.8 to 0.9 1.05 GM 19
N~ 8.0
>0.9 to 1.0 1.20
Nu 29
40
“v *IC
Applied “ -d
‘IF 65
Rp = Nominal Total Potentiometer 48
‘Uc
Resistance
78
*UF
. Power Dissipation
‘Applied 46
*RW
v = 500 Volts for RV4X--XA8XB SF .50
Rated
MF 25
= 500 Vofts for 2RV7X--XA&XB
ML 66
w 350 Volts for RV2X-XA&XB
cl 1200
= 350 Votts for RV4X--XA&XB
= 350 Votts for RV5X--XA&XB
= 350 Volts for RV6X--XA&XB
w 250 Votts for RV1 X--XA&XB
= 200 Votts for All Other Types
Quality Factor - nO
MIL-SPEC 2.5
I Lower 5.0
9-24

lvllL-t-fDBK-217F
9.15 RESISTORS, VARIABLE, NONWIREWOUND, FILM AND PRECISION

MIL-R-39023 RQ Variable, Nonwirewound, Film, Precision
MIL-R-23285 RVC Vatiabie, Nonwirewound, Film
Lp = kbXTAp~ZRZvZQnE Failures/l OG Hours

——
~RQ Stvle OnIv) lRVP.
,. . . . .Shfk
-., .- mlu) )
. -F !.,
&iess
TA (W) .1 .3 .5 .7 .9 TA (’C) .1 .3 .5 .7 .9
0 .023 .024 .026 .028 .031 0 .028 .031 .033 .036 .039
10 .024 .026 .029 .031 .034 .029 .032 .035 .038 .042
20 .026 .029 .032 .035 .039 ;; .030 .033 .037 .041 .046
30 .028 .032 ,036 .040 ,045 30 .031 .035 .040 .045 .051
40 .032 .036 .041 .047 .053 40 .032 .037 .043 .050 .058
50 .037 .042 .049 .057 .065 50 .034 .040 .047 .056 .066
.044 .051 .060 .070 .083 60 .036 .044 .053 .064 .078
% .053 .064 .076 .091 .11 70 .039 .049 .060 .075 .093
80 .068 .083 .10 .12 80 .043 .055 .070 .09 .11
90 .092 .11 .14 90 .048 .063 .083 .11 .15
100 .13 .17 100 .055 .075 .10 .14 .19
110 .20 110 .064 .091 .13 .18 ,26
120 .077 .11 .17 .25 .37
130 .096 .15 .23 .36 .55
140 .12 .20 .33 .53
T+273 7.4 150 .17 .29 .50
() 160 .24 .44
170 .37
h :.,”;;; &F) ‘6 )
T+273 7.9
%= .0257 exp —
T= Ambient Temperature (“C) () 398
s = Ratio of Ogmrating Power to Rated Power.
q(a) (T;Y);3 )
T = Ambient Temperature (“C)
Resistance Factor - ZR s = Ratio of Operating Power to Rated Power.

Resistance Range (Ohms)
‘R
Up to 10K 1.0
>1 OK to 50K 1.1
>50K to 200K 1.2
>200K tO 1 M 1.4
>lM 1,8
I
9-25

MIL-HDBK-217F
9.15 RESISTORS, VARIABLE, NONWIREWOUND, FILM AND PRECISION
Potentiometer Taps Factor - ~APq Quality Factor - TCO

. . ..-
N N N Quality
3 1.0 73 2.7 23 5.2
MIL-SPEC 2
4 1.1 14 2.9 24 5.5
Lower 4
5 1.2 15 3.1 25 5.8
6 1.4 16 3.4 26 6.1

7 1.5 17 3.6 27 6.4
Environment ~E
8 1.7 18 3.8 28 6.7
GB 1.0
9 1.9 19 4.1 29 7.0
GF 3.0
10 2.1 20 4.4 30 7.4 14
GM
11 2.3 21 4.6 31 7.7 NS 7.0
12 2.5 22 4.9 32 8.0 Nu 24

w
*IC 6.0
2 12
d ‘IF
+ 0.792
%APS = 25 20
%c
Number of Potentiometer Taps, *UF 30
I
‘TAPS =
including the Wiper and Terminations. 39
‘RW
SF .50
Voltage Factor - ~
MF 22
Applied Voltage”
ML 57
Rated Voltage ‘v
c, 1000
O to 0.8 1.00
>0.8 to 0,9 1.05
>0.9 to 1.0 1.20

r
●V . ~’
Applied
Rp = Nominal Total Potentiometer

Resistance
v = 250 Votts for RQ090, 110, 150, 200,

Rated
300
= 500 Volts for RQ1 00, 160, 210
a 350 Votts for RVC5, 6
9-26

* - ,. “
MIL-HDBK-217F
9.16 CALCULATION OF STRESS RATIO FOR POTENTIOMETERS
Stress Rat& (S) Calculationfor Rheostats Stress Ratb (S) Cakulation for Potentiometers
Connected Conventionally
&
‘mnax ‘APPLIED
s- * s.
‘EFF x ‘GANGED x ‘RATED
%AffiEt)(’maxr~ed)’
Equhmkmtpowerinputtothe
Maxinwn ament Whii will
potendometerwhenitis not
be passed through the rheosta loaded(i.e.,wiper lead
in tho ckouft. dkaommctod).Calcukte as
follows:
ImZIXrat~ Current rating of the
potentiometer. H ourrent V2
rating is not given, use:
in
‘Applied
%
&te@p Vin InputVoltage
Rp Nominal Total Potentiometer

P Power Rating of Potentiometer
rated Resistance
Rp Nominal TotalPotentiometer Power Rating of Potentiometer

%ATED
Resistance
Factor to correct for the reduction
Factor to cxmect for the %4NGED
%ANGED in effective rating of the
reduction in affective ratfng potentiometer due to the dose
of the potentiometer due to proxim~ uf two or more
the dose proximity of two or potentiometers when they are
more potentiometer when they ganged together on a common
are ganged together on a shaft. see below.
cwnmon shaft. See bebw.
Correction factor for the electrical
loading effect on the wiper
oontact of the potentiometer. Its
value is a function of the type of
potentiometer, its resistance,
and the bad resistance. See
next page.
Ganged-Potentiometer FWOf - ICG~GED

First
Number of Potentiometer Second in l-hkd in Gang Fourth in Gang Fifth in Gang Sixth in Gang
B Sections Next to Mount Gang
Single 1.0 Not App Iioable
TW 0.75 0.60 ‘ Not Applicable
Three 0.75 0.50 0.60 Not Applicable
Four 0.75 0.50 0.50 0.60 Not Applicable
Five 0.75 0.50 0.40 0,50 0.60 1 Not Applicable
r Six 0.75 I ().50 0.40 I 040 050 I 060
9-27

,-
( MIL-HDBK-217F
—
9.16 CALCULATION OF STRESS RATIO FOR POTENTIOMETERS
Loaded Potentiometer Derating Factor- ZEFF Styk Constant - KH

.,
%1 Potentiometer
0.2 0.3 0.5 1.0 MIL-SPEC Style Type %
0.1 .04 .03 .02 .01 MlL-R-l 9 RA 0.5

0.2 .13 .09 .05 .03
0.3 .22 .16 .10 .05 MIL-R-22 IW 1.0
0.4 .31 .23 .15 .08
.20 .11 MN-R-94 Rv 0.5
0.5 .38 .29
0.6 .45 .35 .25 .14
MlL-R-l 2934 RR1 000, 1001, 0.3
0.7 .51 .40 .29 .17
0.8 .55 .45 .33 1003, 1400,
0.9 .59 .49 .37 %?
1.0 .53 .40 .25 2100, 2101,
1.5 % .65 .53 .36
2.0 .80 .73 .82 .44 2102,2103
3.0 .87 .81 .72 .56
.64 MIL-R-12934 All Other Types 0.2
4.0 .90 .86 .78
5.0 .92 ,88 .82 .69
MIL-R-22097 RJll, RJ12 0.3
10.0 .96 .94 .90 .83
100.0 1.00 .99 .99 .98 MIL-R-22097 All Other Types 0.2
MIL-R-23285 Rvc 0.5
RL2 MIL-R-27208 RT22, 24,26,27 0.2

%FF = MIL-R-27208 AH Other Types 0.3
RL2 + KH RP2 + 2RPRL
( ) MIL-R-39002 RK 0.5
MIL-R-39015 RTR 22,24 0.2

RL = Load resistance (If RL is variable,
use lowest value). RL is the total MJL-R-39015 RTR12 0.3
resistance between the wiper arm MIL-R-39023 RQ 0.3
and one end of the potentiometer.
MIL-R-39035 RJR 0.3
f%” Nominal Total Potentiometer I
Resistance
- Style -nstant. See KH Table.

%i
9-28
— ————
.--—
MIL-HDBK-217F
9.17 RESISTORS, EXAMPLE
Example
Given: Type RVISAYSA505A vartable 500K ohm resistor procured per MIL-R-94, rated at 0.2
watts is being used in a fixed ground environment. The resistor ambient temperature is
40”C and is dissipating 0.06 watts. The resistance connected to the wiper contact varies
between 1 megohm and 3 megohms. The potentiometer is connected conventionally
without ganging.
The appropriate model for RV style variable resistors Is given in Sectbn 9.14. Based on the given
infon’natbn the folbwing modei factors are determined fnm the tables shown in Seotbn 9.14 and by
foiiowingthe procedure for determining electrical stress for potentiometers as desdbed in Section 9.16.
From Section 9.16

‘APPLIED
.06W
.62 KH . .5 for MIL-R-94 (Section 9.16 Tabie)
‘EFF
1.0 Not Ganged (Section 9.16 Table, Single Section,
%ANGED
First Potentbmeter)
‘RATED .2W
‘APPLIED .06
s
~EFF x ‘GANGED x ‘RATED = (.62)(1.0)(.2) = ‘m
From Section 9.14

.047 TA = 40°C, S Rounded to .5
1.4 500K ohms
1.0 3 Taps, Basic Single Potentiometer
1.0 VRATED = 250 VOttS for RV1 prefu
VAPPLIED = ~ (500,000)(.06) ~ 173 VOftS
173
‘APPLJE#RATED = ~ = ●
W
2.5
2.0
% ‘TAPS% ‘V ‘Q ‘E
(.047)(1.0)(1 .4)(1 .0)(2.5) (2.0) = .33 Failures/l 06 Hours
9-29
——
MIL-HDBK-217F .
10.1 CAPACITORS, FIXED, PAPER, BY-PASS

MII--C-25 CP Paper, By-pass, Filter, Blocking, DC
MIL-C-12889 CA Paper, By-pass, Radio Interference Reduction AC
andl3--
Zp = lbZCVXQnE Failures/l OG Hours

(T.85”c MaxRated) (T-125% Max Ra!ed)
(All MIL-G-12889:”MIL-C-25 Stvles CP25. 26.27.28.29. (MIL-C-25 Styles CP 4,5,8,9, 10, 11, 12 13;
40, 41, 67, 69,70,72, 75, 76,77,78:80:81 i 82: ‘ Characteristic K)
Characteristics E. F) stress
S& TA (%] .1 .3 .5 .7 .9
TA (%) .1 .3 .5 .7 .9
o .00086 .0011 .0035 .015 .051
0 .00088 .0011 .0036 .015 .051
10 .00087 .0011 .0035 .015 .051
10 .00089 .0011 .0036 .016 .052
20 .00087 .0011 .0035 .015 .051
20 .00092 .0011 .0037 .016 .054
30 .00088 .0011 .0035 .015 .051
30 .00097 .0012 .0039 .017 .057
40 .00089 .0011 .0036 .015 ,052
40 .0011 .0013 .0044 .019 .063
50 .00091 .0011 .0037 .016 .053
50 .0013 .0016 .0052 .022 .075
60 .00095 .0012 .0039 .017 .056
60 .0017 .0021 .0069 .030 .10
70 .0010 .0013 .0041 .018 .060
70 .0027 .0034 .011 .048 .16
80 .0011 .0014 ,0046 .020 .067
80 .0060 .0074 .024 .10 .35
90 .0014 .0017 .0056 .024 .081
100 .0019 .0023 .0076 .033 .11
\=.00086[(~)5+ l]exp(2.5(~)18) 110 .0030 .0037 .012 .052 .18
120 .0063 .0078 .026 .11 .37

s = Ratio of Operating to Rated Voltage
Operating vottage is the sum of applied D.C. vottage

~=.ooW3[(5)5+
1]-p(2..(~)’8)
and peak A.C. voltage.
T. Ambient Temperature (“C)
s - Ratio of Operating to Rated Vottage
Operating voftage is the sum of applied D.C. voltage

and peak A.C. voltage. I
1o-1

MIL-HDBK-217F
10.1 CAPACITORS, FIXED, PAPER, BY-PASS
Capacitance Factor- WV
-. Environment Factor - x_
t
Capacitance, C (@) ‘c v Environment fiE
e~ 1.0
MIL-C-25*
.0034 0.7 GF 2.0
.15 1.0
2.3 1.3 GM 9.0
16. 1.6
5.0
MIL-C-12889 Nu 15
All 1.0
6.0
‘Ic
‘IF 8.0
●
‘Cv = 1.2c”095 17
*UC
*UF 32
22
%w
Quality Factor - Xfi SF .50
Quality MF 12
ML 32
MIL-SPEC 3.0
CL 570
Lower 7.0
10-2

+.- - ., . ... .,. . . . ... . ... .. . ., .,. ,,, . .. ... ..
MIL-HDBK-217F
.10.2 CAPACITORS, FIXED, PAPER, FEED-THROUGH

MlL-C-l 1693 CZR and CZ Paper, Metallizecf Paper, Metallized Plastiq RFI
Feed-Throuqh Established Reliability and
Non-Establi;ht?d Reliability
Xp = kbZCvZQzE Failures/l 06 Hours

(T=85”c MaxRated) ~= 150”C Max Rated)
(Char-enstics E, W) ,-, ,-, ----- .. ... P}
i~haraeinrktic . f
(
TA (“C) .1 .3 .5 .7 .9 TA (%) .1 .3 .5 .7 .9
o .0012 .0014 .0047 .020 .069
.0012 .0015 .0048 .021 .070 0 .0012 .0014 .0047 .020 .068
;; ,0012 .0015 .0050 .021 .072 .0012 .0014 .0047 .020 .068
30 .0013 .0016 .0053 .023 .076 E .0012 .0014 .0047 .020 .068
40 .0014 .0018 .0058 .025 .084 30 .0012 .0014 .0047 .020 .068
50 .0017 .0021 .0069 .030 .10 40 .0012 .0014 .0047 .020 .068
60 .0023 .0028 .0092 .039 .13 50 .0012 .0015 .0048 .020 .069
70 .0037 .0045 .015 .064 .21 60 .0012 .0015 .0048 .021 .070
80 .0080 .0099 .032 .14 .47 70 .0012 .0015 .0049 .021 .071
4 80 .0013 .0016 .0051 .022 .074
90 .0013 .0017 .0055 .023 .079
~=.o.11,[(~)’
+1]..P(2.,(~)18) 100
110
.0015
.0017
.0018
.0022
.0060
.0071
,026
.03
.087
.10
120 .0022 .0028 .0091 .039 .13
130 .0033 .0040 .013 .057 .19
s= Ratio of Operating to Rated Voltage
140 .0058 .0072 .024 .10 .34
150 .014 .017 .057 .24 .62
Operating voltage is the sum of applied D.C. voltage

(T= 125°C Max Rated)
(Characteristic K)
~“00115[(~)5+ 11expF5(-Y
Sfmss T= Ambient Temperature (“C)
TA (“C) .1 .3 .5 .7 .9
s = Ratio of Operating to Rated Vottage
o .0012 .0014 .0047 .020 .068
.0012 .0014 .0047 .020 .068
.0047 .020 .068 Operating voltage is the sum of applied D.C. vottage
;: .0012 ,0014
.069 and peak A,C. voltage.
30 .0012 .0014 ,0047 .020
40 .0012 .0015 .0048 .021 .070
.0012 .0015 .0049 .021 .072
E .0013 .0016 .0052 .022 .075
70 .0014 .0017 .0055 .024 .08
80 .0015 .0019 .0062 .027 .09
90 .0019 .0023 .0075 .032 .11
100 .0025 .0031 .010 .044 .15
110 .0040 .005 .016 .07 .24
120 .0084 .010 .034 .15 .49
\=.00115[(~)’ + l]w(25(Tjfl)18)

s = Ratio of Operating to Rated Voftage
Operating vottage is the sum of applied D.C. voltage


I I
I
.
MIL-HDBK-217F
i
10.2 CAPACITORS, FIXED, PAPER, FEED-THROUGH
Capadtance Factor-WV Environment Factor - XE

Capacitance, C (JAF) Environment
0.0031 .70
GB 1.0
L
GF 2.0
0.061 1.0
GM 9.0
1.8 1.5
N~ 7.0
f
Nu 15
I ‘c v = 1.4c0”’2 *IC
‘IF
6,0
8.0
*UC 17
*UF 28
Quality Factor - XQ
%w 22
Quality
SF .50
M 1.0
MF 12
Non-Established Reliability 3.0 ML 32
Lower 10 c,
4
10-4

I
.
MIL-HDBK-217F
10.3 CAPACITORS, FIXED, PAPER AND PLASTIC FILM

MIL-C-14157 CPV Paper and Plastk Film, Est. Rel.
MIL-C-19978 “ CQR and C(2 Paper and Plastk Film, Est. Rel. and Non-Est. Ret.
1P = &cVZQnE Failures/l Oe Hours

(?-=65”c MaxRated) (-r. e5’’chk Ratacf)
(MIL-C-14157styleCPV07; ML-C-14157 StvleCPV17:
MlL-C-l9978 Characteristics P, L] MIL@--19978 Characteristics E, F; G, M)
stress St?ess
TA ~) .1 .3 .5 .7 .9 .1 .3 .5 .7 .9
0 .00053 .00065 .0021 .0092 .031 .00051 .00063 .0021 .0089 .030
.00055 .00069 .0022 .0096 .032 .00052 .00064 .0021 .0090 .030
;: .00061 .00075 .0025 .011 .036 .00054 .00066 .0022 .0093 .031
30 .00071 .00088 .0029 .012 .042 .00057 .00070 .0023 .0099 .033
40 .00094 .0012 ,0038 .016 .055 .00063 .00077 .0025 .011 .037
50 .0015 .0019 .0061 .026 .088 .00074 .00092 .0030 .013 .043
60 .0034 .0042 .014 .059 .20 .00099 .0012 .0040 .017 .058
.0016 .0020 .0064 .028 .093
.0035 .0043 .014 .061 .20
~=..oo,[(~)’+1].xp(2..(~)18) ~-.wm[(~)s+
l]e.p(2.5(*)18)
s- Ratio of Operating to Rated Voftage T- Ambient Temperature (°C)
s - Ratio of Operating to Rated Voltage
Operating voltage is the sum of applied D.C. vottage Operating voltage is the sum of appiied D.C. voftage
and pa ak A.C. voltage. and peak A.C. voltage.
Base Faibre Rate - ~ Base Failure Rate - ~

(T. 125oCMaxRated) (T= 170”C Max Rated)
(MIL-C-141 57 StVta CPV09 and MlL-C-l 9978 (MIL-C-1 9978 Characteristic T)
Chara&teristics K, Q, S) Stress
Stress ‘A (%) .1 .3 .5 .7 .9
TA (“C) .1 .3 .5 .7 .9 o .00050 .00062 .0020 ,0087 .029
.00050 .00062 .0020 .0087 .029
o
10
.00050
.00050
.00062
.00062
.0020
.0020
.0087
.0088
.029
.029 Y .00050 .00062 ,0020 .0087 .029
20 .00051 .00062 .0020 .0088 .030 30 .00050 .00062 .0020 .0087 .029
30 .00051 .00063 .0021 .0089 .030 40 .00050 .00062 .0020 .0087 .029
40 .00052 .00064 .0021 .009 .030 .00050 .00062 .0020 .0088 .030
50 .00053 .00066 .0021 .0092 .031 :: .00051 .00063 .0021 .0088 .030
.00055 .00068 .0022 .0096 .032 .00051 .00063 .0021 .0089 .030
% .00059 .00073 .0024 .010 .035 :: .00052 .00065 .0021 .0091 .031
80 .00067 ,00083 .0027 .012 .039 90 .00054 .00066 .0022 .0093 .031
90 .00081 .0010 .0033 .014 .047 100 .00056 .00069 .0023 .0097 .033
100 .0011 .0013 .0044 .019 .064 110 .00060 .00074 .0024 .010 .035
110 .0018 .0022 .0071 .030 .10 120 .00067 .00083 .0027 .012 .039
120 .0037 .0045 .015 .064 .21 130 .00079 .00098 .0032 .014 .046
140 .0010 .0013 .0041 .018 .060
150 .0015 .0018 .006 .026 .087
~-.ooW[(~)5+
l]e.p(2.5(*)’8) 160
170
.0026
.0061
.0032 .011 .046 .15
.0075 .025 .11 .36
s. Ratio of Operating to Rated Vottage ~=.0005[(~)5+ 1].xp(2.5(*)18)
Operating voltage is the sum of applied D.C. voftage .
and peak A.C. voltage. T = Ambient Temperature ~C)
s= Ratio of Operating to Rated Voftage
and Desk A.C. voltaae.
10-5

. .
MIL-HDBK-217F
10.3 CAPACITORS, FIXED, PAPER AND PLASTIC FILM
-. Environment Factor - XE
Capacitance, C @F) Environment %E
*CV
MIL-C-14157: ●
GB 1.0
.0017 .70 GF 2.0
.027 1.0
.20 7.3 GM 8.0
I 1.0 1.6
Ns 5.0
MIL-C-19978: w
Nu 14
.00032 .70
.033 1.0 4.0
1.0 %c
1.3
15.0 1.6 ‘IF 6.0
*UC 11.0
●
‘Cv = 1.6C0”13 *UF 20
*RW 20
0.077
● “ 7tcv = 1.3C SF .50
MF 11
ML 29
Quality Factor - nQ c’ 530
Quality ~Q
s .03
R .10
P .30
M 1.0
L 3.0
MlL-C-l 9978, Non-Est. Rel. 10
Lower 30
10-6

MIL-HDBK-217F
10.4 CAPACITORS, FIXED, METALLIZED PAPER, PAPER-PLASTIC AND PLASTIC

MIL-C-18312 CH Metallized Paper, Paper-Plastic, Plastic
MI L-C-39022 CHR MetalJized Paper, Paper-Plastic, Plastic,
Established Reliabifii
kp = kbTCCvXQxE Failures/l OG Hours

(T-85”c MaxRated) (T=1250CMax Rated)
(MIL-C-39022Charactertatic
9 and 12 (50 Voltsrated]. (MIL-C-39022 Char~eristic 9 and 12 (above 50 Votts
Chara eristic 49; and MlL-C-l 8312 Characteristic R)” ratedl Characteristics 1.10, 19, 29, 59; and
stress “.MlL-C-l8312 Chara%istic N)
~ (%) .1 .3 .5 .7 .9 Strass
TA (~) .1 .3 .5 .7 .9
o .00070 .00087 .0029 .012 .041
o .00069 .00086 .0028 .012 .041
10 .00072 .00089 .0029 .012 .042
10 .00069 .00086 .0028 .012 .041
20 .00074 .00091 .0030 .013 .043
20 .00070 .00086 .0028 .012 .041
30 .00078 ,00097 .0032 .014 .046
30 .00070 .00087 .0028 .012 .041
40 .00086 .0011 .0035 .015 .051
40 .00071 .00088 .0029 .012 .042
50 .0010 .0013 .0041 .018 .06
50 .00073 .00090 .003. .013 .043
60 .0014 .0017 .0055 .024 .08
60 .00076 .00094 .0031 .013 .04s
70 .0022 .0027 .0089 .038 .13
70 .00082 .0010 .0033 .014 .048
80 .0048 .0059 .019 .084 .28
80 .00092 .0011 .0037 .016 .054
90 .0011 .0014 .0045 .019 .065

~=.WW9[(~)5+ l]exp(2.5 (=)18)
100 .0015 .0019 .0061 .026 .088
110 .0024 .0030 .0098 .042 .14

120 .0051 ,0063 .020 .088 .30
s- Ratio of Operating to Rated Voltage

\=.00069[(~)’+ l]exP(2.5 (=)18)
S = Ratio of Operating to Rated Voltage


MIL-HDBK-217F
10.4 CAPACITORS, FIXED, METALLIZED PAPER, PAPER-PLASTIC AND PLASTIC
Capadtance Factor - wv Emkmment Factor -xc

b
Capacitance, C @F) ‘c v Environment ~E
GB 1.0
0.0029 .70
GF 2.0
0.14 1.0
% 8.0
2.4 1.3
NS 5.0
Nu 14
0.092
Zcv = 1.2C
4.0
*IC
‘IF 6.0
11.0
*UC
Quality Factor - Xn
u
*UF 20
Quality 7CQ
‘RW 20
s 0.03 SF .50
R .10 MF 11
ML 29
P .30
CL 530
M 1.0
L 3.0
MIL-C-18312, Non-Est. Rel. 7.0
Lower 20

MIL-HDBK-217F
10,5 CAPACITORS, FIXED, PLASTIC AND METALLIZED PLASTIC

MIL-C-55514 CFR Plastic, Metallized Plastic, Est. Rel.
Xp = kbXcvXQzE Failures/l OG Hours

(T= 12SOCMax Rated)
(Characteristics M, N’) \ -. -------- .-. .— 0-,
(Charadari@im , ., !%)
R - t
Strws
TA (%) .1 .3 .5 .7 .9 TA (“C) .1 .3 .5 .7 .9
o .0010 .0012 .0041 .018 .059 0 .00099 .0012 .0040 .017 .058
10 .0010 .0013 .0042 .018 .060 10 .0010 .0012 .0040 .017 .058
20 .0011 .0013 .0043 .018 .062 20 .0010 .0012 .0041 .017 .059
30 .0011 .0014 .0045 .020 .066 30 .0010 .0012 .0041 .018 .059
40 .0012 .0015 ,0050 .022 .073 40 .0010 .0013 .0041 .018 .060
50 .0015 .0018 .0059 .026 .086 50 .0011 .0013 .0043 .018 .062
60 ,0020 .0024 .0079 .034 ,11 60 .0011 .0014 .0044 .019 .064
70 .0032 .0039 .013 .055 .18 70 .0012 .0015 .0048 .020 .069
80 .0069 .0085 .028 .12 .40 80 .0013 .0016 .0054 .023 .077
90 .0016 .0020 .0065 .028 .094
~=.00099[(:)5+ l]exP(2.5 (%)18) 100 ,0022 .0027 .0087 .038 .13
110 .0035 .0043 .014 .06 .20

120 .0073 .0090 .029 .13 .43
Operating vottage is the sum of applied C).C. voftage

and peak A.C. voltage, \=.00099[(;)5+ 1].XP(2.5 (-)18)
s- Ratio of Operating to Rated Voltage

and peak A.C. voftage.
i

,.. . .
MIL-J+DBK-217F
10.5 CAPACITORS, FIXED, PLASTIC AND METALLIZED PLASTIC
Capacitance Factor - WV Environment Factor - n=

L
Capacitance, C (jLF) I ~cv Environment ~E

GB 1.0
0.0049 .70
GF 2.0
0.33 1,0
GM 10
7.1 1.3
Ns 5.0
38. 1.5 Nu 16
Alc 6
0.085
7CCV=1.1 C 11
%
%c 18
*UF 30
Quality Factor - ZQ 23
‘RW
Quality ~Q SF .50
MF 13
s .030
ML 34
R .10
cL 610
P .30
M 1.0
Lower 10
1o-1o

,--
1 I I 1 n—I— —--A A.-
/
MIL-HDBK-21 7F
10.6 CAPACITORS, FIXED, SUPER-METALLIZED PLASTIC

MIL-C-63421 CRH Super-Metallized Plastic, Est. Rel.
1P = kbXCvZQnE Failures/l OG Hours
Base Failure Rate - ~ Capacitance Factor - WV

t
(T= 125°C Max Rated) Capacitance, C (vF) ‘Cv
stress
.1 .3 .5 .7 .9
.001 .64
o .00055 .00068 ,0022 .0096 .032 0.14 1.0

.00055 .00068 .0022 .0096 .032
:: .00056 .00069 .0023 .0097 .033
2.4 1.3
30 .00056 .00069 .0023 .0098 .033
40 .00057 .00070 .0023 .0099 .033
50 .00058 .00072 .0024 .010 .034 23 1.6
60 .00061 .00075 .0025 .011 .036
70 .00065 .00081 .0026 .011 .038
80 .00073 .00091 .0030 .013 .043 0.092
90 .00089
ncv = 1 .2C
.0011 .0036 .015 .052
100 .0012 ,0015 .0049 .021 .07
110 .0019 .0024 .0078 .033 .11
120 .0040 .0050 .016 .070 .24
Environment Factor - X_
~=.00055[(~)5 + 1].XP(2.5 (~)” ; I Environment
GB
T. Ambient Temperature (“C) GF 4.0
s= Ratio of Operating to Rated Vottage GM 8.0

Ns 5.0
and peak A.C. voltage. Nu 14
Alc 4.0
Quality Factor - ZQ ‘IF 6.0
Quality 7tQ ‘Uc 13.0
‘UF 20
s .020
fhv 20
R .10 sF .50
P .30 MF 11
M 1.0 ML 29
CL 530
Lower 10

. . —. —— ———
t
MIL-HDBK-217F
10.7 CAPACITORS, FIXED, MICA

MIL-C-5 CM MICA (Dipped or Molded)
MIL-C-39001 CMR MICA (Dipped), Established Reliability
Ap = LbZCvZQzE Failures/l OG Hours
BaseFailure Rate - ~ Base Failure Rate - ~

(T=70”C Max Rated) (T=850C Max Rated)
(MIL-G5, Temp. Range M) (MIL-C-5, Temp. Ran@ N)
stress I stress
TA ~) .1 .3 .5 .7 .9 TA (“C) .1 .3 .5 .7 .9
T .00030 .00041 .00086 .0019 .0036 0 .00017 .00024 .00051 .0011 .0021
10 .00047 .00066 .0014 .0030 .0058 10 .00027 .00038 .00079 .0017 .0033
20 .00075 .0011 .0022 .0047 .0092 20 .00042 .00059 .0012 .0027 .0052
30 .0012 .0017 .0035 .0075 .015 30 .00066 .Ooow .0010 .0042 .0081
40 .0019 .0027 .0056 .012 .023 40 .0010 .0015 .003 .0065 .013
50 .0031 .0043 .0089 .019 .037 50 .0016 .0023 .0047 .010 .020
60 .0049 .0068 .014 .030 .059 60 .0025 .0036 .0074 .016 .031
70 .0078 .011 .023 .049 .095 70 .0040 .0056 .012 .025 .048
80 I .0062 .0087 .018 .039 .076
~= 8.6x10-10 [(3)3 + I]exP(16 (~) )

lb= 8.6 XW1O [(~)3+ 1]W(16 (w) )

s. Ratio of Operating to Rated Voltage T= Ambient Temperature (oC)
s. Ratio of Operating to Rated Vottage

n=1500C Max Rated)
(T=125°CMax Rated)
f!fwi Temp. Range O; MIL-C-39001 Temp. Ranqe 0) UY!!kQsTemp.R-ange P; MIL-C-39001, Temp. Ranqe P)
stress
Stress TA (“C) .1 .3 .5 .7 .9
TA (“C) .1 .3 .5 .7 .9
o .00003 .00004 .00008 .00017 .00033
o .00005 .00007 .00015 .00032 .00062 10 .00011 .00024 .00047
.00004 .00005
10 .00008 .00011 .00022 .00048 .00093 20 .00006 .00008 .00017 .00036 .00069
20 .00011 .00016 .00033 .00071 .0014 30 .00008 .00012 .00024 .00052 .0010
30 .00017 .00024 .00050 .0011 .0021 40 .00035 .00076 .0015
.00012 .00017
40 .00025 .00036 .00074 .0016 .0031 .00051 .0011 .0022
.00018 .00025
50 .00038 .00053 .0011 .0024 .0046 % .00026 .00036 .00075 .0016 .0031
60 .00057 .0008 .0017 .0036 .0069 70 .0011 .0024 .0046
.00038 .00053
70 .00085 .0012 .0025 .0053 .010 80 .0016 .0034 .0067
.00055 .00077
80 .0013 .0018 .0037 .008 .016 .0023 .0098
90 .0008 .0011 .0050
90 .0019 .0027 .0055 .012 .023 .0016 .0034 .0073 .014
100 .0012
100 .0028 .0040 .0083 .018 .035 110 .0017 .0024 .0050 .011 .021
110 ,0042 .0059 .012 ,027 .052 .0073 .016 .030
120 .0025 .0035
120 .0063 .0089 .018 .040 .077 .011 .044
130 .0036 .0051 .023
140 .0053 .0074 .015 .033 .065
~b= 8.6)( 10-10 [(3)3+ jeW(16 (%%)) 150 .0078 .011 .023 .049 .095
T= Ambient Temperature (“C) Ab= S.6XIO-10[(33+ 1].XP(16 (7;;?) )

s= Ratio of Operating to Rated Vottage
Operating voltage is the sum of applied D.C. voltage T= Ambient Temperature (“C)
and pa ak A.C. voltage. s- Ratio of Operating to Rated Voftaqe
Operating voltage is the s~m of applied D.C. voltage
10-12

* ,.
MIL-HDBK-217F
10.7 CAPACITORS, FIXED, MICA
Capacitance Factor - ~V
Capacitance, C (pF) Environment Factor - z=
‘Cv
Environment
2 .50
GB 1.0
38 .75 GF 2.0
300 1.0 % 10
Ns 6.0
2000 1.3
Nu 16
8600 106
%c 5.0
29000 1,9
‘IF 7.0
84000 2.2 22
‘Uc
‘UF 28
I ‘Cv = 0.45C”4 %nN

SF
23
.50
MF 13
Quality Factor - nQ
ML 34
Quality
c1 610
T .010
s .030
R .10
P .30
M 1.0
L 1.5
MIL-C-5, Non-Est. Rel. Dipped 3.0
MIL-C-5, Non-Est. Ref. Molded 6.0
Lower 15
10-13

n r- -- ...:-- r--- ---- L nu.

MIL-HDBK-217F
10.8 CAPACITORS, FIXED, MICA, BUTTON —

MIL-C-1095O CB MICA, Button Style
Xp = LbZCvXQnE Failures/l OG Hours

(T= 85°C Max Rated) (T= 150”C Max Rated)
(Stvle CB50) fAll
\ . ....-TvoP=------
Fxrxmt -----
CR50\ 1
‘s&- stress
TA (Z) .1 .3 .5 .7 .9 TA (“C) .1 .3 .5 .7 .9
0 .0067 .0094 .019 ,042 .082 0 .0058 .0081 .017 .036 .071
10 .0071 .0099 .021 .044 .086 10 .0059 .0083 .017 .037 .072
20 .0076 .011 .022 .047 .092 20 .0061 .0085 .018 .038 .074
30 .0082 .011 .024 .051 .10 30 .0062 .0087 .018 .039 .076
40 .009 .013 .026 .056 .11 40 .0064 .009 .019 .040 .079
50 .010 .014 .029 .063 .12 50 .0067 .0094 .019 .042 .082
60 .012 .016 .033 .072 .14 60 .0070 .0098 .020 .044 .086
70 .013 .019 .039 .084 .16 70 .0074 .010 .022 .046 .090
80 .0079 .011 .023 .049 .096
90 .0085 .012 .025 .053 .10

::00 .11
5~~~~)~~l]ex~72 (~- 100 .0093 .013 .027 .058
110 .010 .014 .03 .064 .12
T. Ambient Temperature (“C) 120 .011 .016 .033 .072 .14
s= Ratio of Operating to Rated Voltage 130 .013 .018 .038 .082 .16
Operating vottage is the sum of applied D.C. voltage 140 .015 .021 .044 ,095 .18
150 .018 .025 .052 .11 .22
k i
~= .0053 [(~)3 + l]exP(l.2 (T~~~)63)
T= Ambient Temperature (°C)
s== Ratio of Operating to Rated Voftage

and peak A.C. voltage. c
10-14

*
MIL-HDBK-217F
10.8 CAPACITORS, FIXED, MICA, BUTTON
Quality Factor - ZQ Environment Factor - X.

h
t
Quality ftQ Environment
,
GB 1.0
MIL-C-1095O 5.0
GF 2.0
Lower 15
GM 10
Ns 5.0
Capacitance Factor - ~v Nu 16
k
Capacitance, C (pF) ‘Cv AC 5.0
‘IF 7.0
8 .50
*UC 22
50 .76
‘UF 28
160 1.0
‘RW 23
500 1.3 SF .50
1200 1.6 MF 13
ML 34
2600 1.9
cL 610
5000 2.2
‘Cv = .31c0”23
10-15
. =——n—-—-—==—-=-—c=.=—=——s—-———————ee—..- - _m_—- . . . ..
_._.._.
~== _.
MIL-HDBK-217F
II
I
,
I
10.9 CAPACITORS, FIXED, GLASS —

MlL-C-l 1272 CY GIass
MIL-C-23269 CYR Glass, Established Reliability
I
Ap = kbnCVTCQnE Failures/l OG Hours
Base Faiture Rate - ~ Base Failure Rate - &

(T=125°C Max Rated) (T= 200°C Max Rated)
and MlL-C-l 1272 Temp. Range Cl (MIL-C-1 1272 Ternp Range D)
WL!!!!! C-23296
Stm’ss &
TA (%; .1 .3 .5 .7 .9 TA (“C .1 .3 .5 .? .9
o .00001 .Oooo1 .00002 .00004 .00010
o .00005 .00005 .00010 .00023 .0005!
10 .00001 .00001 .00002 .00006 .00014
10 .00007 .00008 .00014 .00035 .0008 20 .00002 .00002 .00003 .00008 .00019
20 .00011 .00012 .00022 .00052 .0012 30 .00002 .00003 .00005 .00011 .00027
40 .00003 .00004 .00007 .00016 .00038
30 .00016 .00018 .00032 .00078 .0018
50 .00005 .00005 .00009 ,00022 .00053
40 .00024 .00027 .00048 .0012 .0028 60 .00006 .00007 .00013 .00031 .00074
50 .00036 .00041 .00072 .0017 .0041 70 .00009 .00010 .00018 .00044 .0010
80 .00013 .00014 .00025 .00061 .0015
60 .00054 .00061 .0011 .0026 .0062
90 .00018 .00020 .00035 .00086 .0020
70 .0008 .00091 .0016 .0039 .0092 100 .00025 .00028 .00050 .0012 .0029
80 .0012 .0014 .0024 ,0058 .014 110 .00035 .00039 .00070 .0017 .0040
120 .00049 .00055 .00098 .0024 .0056
90 .0018 .0020 .0036 .0087 .021
130 .00069 .00078 .0014 .0033 .0079
100 .0027 .0030 .0054 .013 .031 140 .00096 .0011 .0019 .0047 .011
110 .0040 .0045 .0080 .019 .046 150 .0014 .0015 .0027 .0065 .016
160 .0019 .0021 .0038 .0092 .022
120 .0060 .0068 .012 .029 .069
170 .0027 .0030 .0053 .013 .031
180 .0037 .0042 .0075 .018 .043
‘b = 8.25X lo-fo [(:)4 + 1].xlp (T;%) ) 190 .0052 .0059 .010 .025 .060
200 .0073 .0083 .015 ,035 ,084
s= Ratio of Operating to Rated Vottage $= 8.25x I0 -q(:)4+ 1]W(16 (%%) )
Operating voltage is the sum of applied D.C. vottage

and peak A.C. voltage. T= Ambient Temperature (“C)
s. Ratio of Operating to Rated Voltage
Operating voltage is the sum of applied D.C, voltage


Ml13HDBK-217F
10.9 CAPACITORS, FIXED, GLASS
Capacitance Factor - ~,v Environment Factor - ZE

-.
Capacitance, C (pF) ‘Cv Environment ~E
GB 1.0
1 .62
GF 2.0
4 .75
GM 10
30 1.0 Ns 6.0
200 1.3 Nu 16
900 1.6 AC 5.0
‘IF 7.0
3000 1.9
*UC 22
8500 2.2
*UF 28
‘RW 23
‘Cv = 0.62C0”14 SF .50
MF 13
Quality Factor - ~Q
ML 34
Quality ~Q CL 610
s .030
R .10
P .30
M 1.0
L 3.0
MlL-C-l 1272, Non-Est. Rel. 3.0
Lower 10
10-17

MJL-HDBK-21 7F
—
10.10 CAPACITORS, FIXED, CERAMIC, GENERAL PURPOSE
s 3ECIFICATION
STYLE DESCRIPTION
M !L-C-11015 GK Ceramk, General Puqxxe
M L-C-39014 CKR Ceramk, General Purpose, Est. Rel.
Lp = kbZcvZQnE Failures/l OG Hours

(T= 850C Max Rated) (T =1500C Max Rated)
AIL-C31014 Styles CKR13, 48, 64, 72; ItL-C-l 1015 T ype C Rated Temperature)
IL-C-I 1015 Type A Rated Temperature)
I
TA (W .1 .3 .5 .7 .9
.1 .3 .5 .7 .9
o .00059 .0011 .0032 .0078 .016
o .00067 .0013 .0036 .0088 .018
10 .00069 .0013 .0037 .0091 .019
10 .00061 .0012 .0033 .00’8 .016
20 .00071 .0014 .0030 .0093 .019
L
30 .00073 .0014 .0039 .0096 .020
20 .00062 .0012 .0034 .0082 .017
40 .00075 .0014 .004 .0099 .020
50 .00077 .0015 .0042 .010 .021
30 .00064 .0012 .0035 .0084 .017
60 .00079 ,0015 .0043 ,010 .021
70 .00081 .0016 .0044 .011 .022
40 .00065 .0013 .0035 .0086 .018
80 .00083 .0016 .0045 .011 .023
50 .00067 .0013 .0036 .0088 .018
.
%- “18X’(T=
0003[(33 ) 60 .00068 .0013 .0037 .009 .018
s= Ratio of Operating to Rated Voltage 70 .00070 .0013 .0038 .0092 .015
Operating vottage is the sum of applied D.C. voltage 80 .00072 .0014 .0039 .0095 .019
and peak A,C. voltage.
90 .00073 .0014 .0040 .0097 .020
Base Failure Rate - ~ 100 .00075 .0014 .0041 .0099 .020
(T= 125°C Max Rated)
(MIL-C-39014 Styles CKR05-12, 14-19, 73, 74; 110 .00077 .0015 .0042 .010 .021
IL-C- I 1015 Type B Rated Temperature)
stress 120 .00079 .0015 .0043 .010 .021
‘A (=) .1 .3 .5 .7 .9
130 .00081 .0016 .0044 .011 .022
o .00062 .0012 .0033 .0082 .017
10 .00063 .0012 .0034 .0084 .017 140 .00083 .0016 .0045 .011 .022
.00065 .0013 .0035 .0086 .018
:: .00067 .0013 .0036 .0088 .018 150 .00085 .0016 .0046 .011 .023
40 .00068 .0013 .0037 .0090 .018
50 .00070 .0014 .0038 .0093 .019
60 .00072 .0014 .0039 .0095 .019
70
80
90
.00074
.00076
.00077
.0014
.0015
.0015
.0040
.0041
.0042
.0097
.010
.010
.020
.020
.021
\ - 0003[(33+11‘xp
100 .00079 .0015 .0043 .010 .021 T- Ambient Temperature (“C)
110 .00081 .0016 .0044 .011 .022
120 .00084 .0016 .0045 .011 .023 s. Ratio of Operating to Rated Vottage
.
‘b = ooo’[(~)’+11“p(=) and peak A.C. voltage.
NOTE: The rated temperature designation (type A,
B, or C) is shown in the pan number, e.g.,
CKG1AW22M).

MIL-HDBK-217F
I 10.10 CAPACITORS, FIXED, CERAMIC, GENERAL PURPOSE
Capacitance Factor - WV Environment Factor - n=

L
Capacitance, C (pF) ~cv Environment

GB 1.0
6.0 .50
GF 2.0
240 .75
GM 9.0
3300 1.0
Ns 5.0
36,000 1.3 Nu 15
240,000 1.6 Ac 4.0
‘IF 4.0
1,100,000 1.9
‘Uc 8.0
4,300,000 2.2
*UF 12
*RW 20
0.11
I Xcv = .41C
SF
MF 13
.40
Quality Factor - n= ML 34
Quality c1 610
s .030
R .10
P .30
M 1.0
L 3.0
MlL-C-l 1015, Non-Est. Rel. 3.0
Lower 10
4
.
10-19

MIL-I-IDBK-217F
10.11 CAPACITORS, FIXED, CERAMIC, TEMPERATURE COMPENSATING AND CHIP –

MIL-C-20 CCR and CC Ceramic, Temperature Compensating, Est.
and Non Est. Rel.
MIL-C-55681 CDR Ceramic, Chip, Est. Rel.
I lp = kbZcVXOzE Failures/l OG Hours
Base Failure Rate - ~ Capacitance Factor - ~,v

(r-85% Max Ratecf) Capacitance, C (pF)
L ‘Cv
(MIL-C ) Stybs CC 20,25,30,32,35, 45, 85, 95-97)
Stress 1 .59
.1 .3 .5 .7 .9 7 .75
~~ W)
81 1.0
.00015 .00028 .00080 .0019 .0040
720 1.3
10 .00022 .00042 .0012 ,0029 .0059
4,100 1.6
20 .00033 .00063 .0018 .0043 .0088
30 .00049 .000!34 .0026 .0064 .013 I 17,000 I 1.9 I
40 .00073 .0014 .0039 .0096 .020 58;000 I 2.2
I
.0011 .0021 .0059 .014 .029 0.12
E .0016 .0031 .0088 .021 .044 Zcv = .59C
, \
70 .0024 .0046 .013 .032 .065
80 .0036 .0069 .019 .047 .097
Quality Factor - XQ
1].XP(14.3 (T;3 ) )1 Quality ~Q

\
= 2.6x1O -9[(:)3+ 4
s .030
T. Ambmnt Temperature (%) R .10
s- Ratio of Operating to Rated Voltage P .30
M 1.0
and maak A.C. vottaoe.
Non-Est. Rel. 3.0
Lower 10

(T= 125oC Max Rated)
(MIL-C-20 Styles CC 5-9,13-19,21,22,26,27, 31,33,
36, 37, 47, 50-57, 75-79, 81-83, CCR 05-09,13-19, 54-
57, 75-79, 81-83, 90; MIL-C-55681 All CDR Styles)
I Environment
GB
I
~E
1.0
I
Stress
TA (“C) .1 .3 .5 .7 .9 GF 2.0
0 .00005 .00009 .00027 .00065 .0013 % 10
.00007 .00014 .00038 .00093 .0019
E
30
40
.00010
.00014
.00021
.00019
.00028
.00040
.00055
.00078
.0011
.0013
.0019
.0027
.0027
.0039
.0056
N~
Nu
5.0
17
1
50 .00030 .00057 .0016 .0039 .008
60 .00042 .00082 %c 4.0
.0023 .0056 .011
70 .00061 .0012 .0033 .008 .016
‘IF 8.0
80 .00087 .0017 .0047 ,011 .023
90 .0012 .0024 .0068 .016 .034 16
100 .0018 .0034 .0097
*UC
.024 .048
110 .0026 .0049 .014 .034 .069 *UF 35
120 1 .0037 .0071 .020 ,048 .099
*RW 24
~= 2.6x10 ‘g[(~)’+ l]exp(143 (TJ~T ) ) SF .50
MF 13
s. Ratio of Operating to Rated Voltage ML 34
Operating vottage is the sum of applied D.C. voftage
and peak A.C. voltage. I I 610 I
I0-20

MIL-HDBK-217F
10.12 CAPACITORS, FIXED, ELECTROLYTIC, TANTALUM, SOLID

MIL-C-39003 CSR Tantatum Electrolytic (Solid), Est. Ret.
z n Failures/l OG Hours
‘P = %mCV%R Q E
Base Failure Rate - ~ Series Resistance Factor - Zsl

Stress Circuit Resistance, CR (ohms/vott) % R
~ (“c) .1 .3 .5 .7 .9
o .0042 .0058 .012 .026 .051 >0.8 .066
10 .0043 .0060 .012 .027 .052
20 .0045 .0063 .013 .028 .055 >0.6 to 0.8 .10
30 .0048 .0067 .014 .030 .058
40 .0051 .0072 .015 .032 .0’63
>0.4 to 0.6 .13
50 .0057 .0079 .016 .035 .069
60 .0064 .009 .019 .040 .078
70 .0075 .011 .022 .047 .092 >0.2 to 0.4 .20
80 .0092 .013 .027 .050 .11
90 .012 .017 .034 .074 .14 >0.1 to 0.2 .27
100 .016 .023 .047 .10
110 .024 .034 .07 .15 0 to 0.1 .33
120 .039 .054 .11 .24
Lb = .00375 [(~)3 . 1]..p(2.6 (T~& ) ‘ ) CR = Eff. Res. Between Cap. and Pwr. Supply
Voltage Appiied to Capacitor
operating votiage is the sum of applied D.C. vohage
Envimment Factor - YC=
L
Environment
Capacitance Factor - WV
Capacitance, C @F) GB 1.0
‘Cv
.003 0.5 GF 2.0
.091 .75
1.0 1.0 % 8.0
8.9 1.3 NS 5.0
50 1.6
210 1.9 Nu 14
710
AC 4.0
0.12 5.0
n~v = 1 .Oc ‘IF
*UC 12
Quality Faotor-x.
●
u *UF 20
Quality
D
c
+%-I
0.010
‘RW
SF
24
.40
s 0.030 MF 11
B 0.030
R 0.10 ML 29
P 0.30
M 1.0 CL 530
L 1.5
Lower 10

MIL-HDBK-217F
10.13 CAPACITORS, FIXED, ELECTROLYTIC, TANTALUM, NON-SOLID
SPECIFICATION STYLE DESCf IPTION

MIL-C-3965 CL Tantalw 1, Electr’olyk (Non-Solid)
MIL-C-39006 CLR Tantalw I, Electrolytic (Non-Solid), Est. Rel.
kp = kbXcVZCXQxE Failures/l 06 Hours

(-r = 85°C Max Rated) (T= 175eC Max Rated)
(MIL-C-3965 Styles CL24-27, 34-37) tllL-C-3965 Sty Ies CL1O, 13, 14, 16-18)
stress
TA (“C) .1 .3 .5 .7 .9 TA (% .1 .3 .5 .7 .9
0 .0021 .0029 .0061 .013 .026
10 .0023 .0032 .0067 .014 .028 o .0017 .0024 .0050 .011 .021
20 .0026 .0036 .0075 .016 .031
30 .0030 .0042 .0087 .019 .036 10 .0017 .0024 .0051 .011 .021
40 .0036 .0051 .011 .023 .044
50 .0047 .0066 .014 .029 .057 20 .0018 .0025 ,0052 .011 .022
60 .0065 .0091 .019 .041 .079
30 .0018 .0025 .0053 .011 .022
~~ool~
40 .0019 .0026 .0054 .012 .023
50 .0019 .0027 .0056 .012 .023
T = Ambient Temperature (“C) 60 .002 .0028 .0058 ,013 .024

Operating voltage is the sum of applied D.C. voltage 70 .0021 .0030 .0062 .013 .02L
80 .0023 .0032 .0066 .014 .028
90 .0025 .0035 .0072 .016 .030

(T= 125°C Max Rated) 100 .0028 .0039 .0080 .017 .034
(MIL-C-3965 Styles CL20-23, 30-33, 40-43, 46-56, 64-
i7, 70-73; and all MI L-C-39006 Styles) 110 .0032 .0044 .0092 .020 .039
Stress
120 .0037 .0052 .011 .023
TA (“C) ,1 .3 .5 .7 .9
o .0018 .0026 .0053 .011 .022 130 .0046 .0064 .013 .029
10 .0019 .0026 .0055 .012 .023
20 .0020 .0028 .0057 .012 .024 140 .0059 .0082 .017 .037
30 .0021 .0029 .0061 .013 .026
40 .0023 .0032 .0066 .014 .028 150 .0079 .011 .023 .049
50 .0025 .0035 .0072 .016 .030
60 .0028 .0040 .0082 .018 .034 160 .011 .016 .033 .071
70 .0033 .0046 .0096 .021 .040
80 .0041 .0057 .012 .025 .049 170 .018 .025 .051
90 ,0052 .0073 .015 .033 .084
100 .0071 .010 .021 .045
110 .011 .015 .031 .066
120 ,017 .024 .050 .11
kb=.00165[(~)3+ l]exp(2.6(~ )’-0)
Ab=.00165[(~)3+ l]exp(2.6 (Tj~~ ) ‘0 )
s. Ratio of Operating to Rated Vottage s= Ratio of Operating to Rated Vottage
Operating vottage is the sum of applied D.C. voltage Operating voltage is the sum of apphed D.C. voftagc
and peak A.C. voltage. and peak A.C. voltage.
I
10-22

MIL-HDBK-217F
I
10.13 CAPACITORS, FIXED, ELECTROLYTIC, TANTALUM, NON-SOLID
Capadtanoe Factor - ~v Quality Factor - nfi
I Capadance, C (p.F) I ~cv Quality

I
I .091 .70 s
I
.030
20 1.0
1100 1.3 R .10
P .30
I WV = .82C0”066 M 1.0
L 1.5
Constmction Factor - ~
MIL-C-3965, Non-Est. Rel. 3.0
Construction Type I 7CC
Lower 10
Slug, All Tantalum .30
Foil, Hermetic’ 1.0
Slug, Hermetic ● 2.0
Foil, Non-Hermetic ● 2.5 Environment Factor - z=
Slug, Non-Herrnetk ● 3.0 L
Environment fiE
●Type of Seal Identified as Follows: GB 1.0
GF 2.0
1) MIL-C-3965 (CL) - Note Last Letter in Part Number:
G - Hermetio E - Non-Hermetic GM 10
Example: CL1 OBC700TPQ is Hermetic Ns 6.0
2) MIL-C39006 (CLR) - Consult Individual Part Nu 16

Specification Sheet (slash sheet)
Ac 4,0
NOTE:
Foil Types - CL 20-25,30-33,40,41,51 -54, 70-73 ‘IF 8.0
CLR 25,27,35,37,53,71,73 14
‘Uc
Slug Types - CL 10, 13, 14, 16, 17, 18,55,56, 30
64-66, 67
‘UF
CLR 10, 14, 17,65, 69,89 ‘RVV 23
All Tantalum - CL 26,27,34-37,42,43, 46-49 SF .50

CLR 79
MF 13
ML 34
cL 610
10-23
MIL-HDBK-217F
10.14 CAPACITORS, FIXED, ELECTROLYTIC, ALUMINUM —

MIL-C-39018 CUR and CU Ektrolytic, Aluminum Oxide, Est. Rel. and Non-Est. Rel.
Lp = kbZCvmQzE Failures/l 06 Hours
Base Failure Rate - ~ Base Faiture Rate - ~

(T= 85°C Max Rated) (T= 125°C Max Rated)
[M IL-C-39018 stvle 71 ~ (All h L-C-3901 8 Styles Except 71, 16 and 17)
Stfws stress
T* (%) .1 .3 .5 .7 .9 TA (~) .1 .3 .5 .7 .9
0 .0095 .011 .019 .035 .064
.012 .015 .024 .046 .084 o .0055 .0067 .011 .021 .038
;: .017 .020 .033 .062 .11
30 .023 .028 .046 .087 .16 10 .0065 .0078 .013 .024 .044
40 .034 .042 .068 .13 .23
50 .054 .065 .11 .20 .36 20 .0077 .0093 .015 .029 .052
60 .089 .11 .18 .33 .60
70 .16 .19 .31 .58 1.1 30 .0094 .011 .019 .035 .064
.
40 .012 .014 .023 .044 ,080
;=.O o:[(~;~+ l]:;~.og’;-;’ ) 50 .015 .019 .030 .057 .10
60 .021 .025 .041 .077 .14

70 .029 .035 .057 .11 .20
s- Ratio of Operating to Rated Voftage
Operating voltage is the sum of applied D.C. voltage 80 .042 .050 .083 .16 .28
and peak A.C. voftage.
90 .064 .077 .13 .24 .43
100 .10 .12 .20 .38

Base Faiture Rate - ~
(T= 105”C Max Rated) 110 .17 .21 .34 .63
(MIL-C-39018 Styles 16 and 17)
120 .30 .37 .60 1.1
Sttess
[A(~) ,1 .3 .5 .7 .9
0 .0070 ,0064 .014 .026 .047
10 .0085 .010 .017 .031 .057
,,=.00254[(:)3 + I]exp(s.09 (~) 5 )
20 .011 .013 .021 .040 .072
30 .014 .017 .027 .051 .094
40 .019 .022 .037 .069 ,13
50 .026 .031 .052 .097 .18
60 .038 .046 .076 .14 .26
.059 .071 .12 .22 .40 s= Ratio of Operating to Rated Voltage
:: .095 .11 .19 .35 .64
100 and peak A.C. voltage.
:=,0
O:[($;:+ 1]:~.og’::;;7;~ ),
I
T = Ambient Temperature (“C)

10-24

.
MIL-HDBK-217F
10.14 CAPACITORS, FIXED, ELECTROLYTIC, ALUMINUM
Capacitate Factor - WV Environment Factor - YC_

k
v
Capacitance, C (@) ‘Cv Environment
2.5 .40
GB 1.0
GF 2.0
55 .70
GM 12
L
400 1.0
Ns 6.0
1700 1.3 NU 17
r
5500 1.6 AK 10
AIF 12
14,000 1.9
*UC 28
32,000 2.2
‘UF 35
65,000 2.5 27
‘RW
120,000 2.8 SF .50
MF 14
= .34c0”’8 ML 38
‘Cv
CL 690
Quality Factor - YCQ

Quality %Q
s .030
R .10
P .30
M 1.0
Non-Est. Ret. 3.0
Lower 10

MIL-HDBK-217F
10.15 CAPACITORS, FIXED, ELECTROLYTIC (DRY), ALUMINUM

MIL-C-62 CE Aluminum, Dry Electrolyte, Polarized
Ap = XbXcvZQzE ~ailures/106 Hours

(T = R’oc.- -----
Mar .Ratt?ch Quality Factor - Xfi
\ —-- .-. -.-,
stress Quality I 7rQ
TA (“C) .1 .3 .5 .7 .9
MIL-SPEC 3.0
0 .0064 .0074 .011 .020 .034
.0078 .009 .014 .024 .042
Lower 10
:: .0099 .011 .017 .030 .053
30 .013 .015 .023 ,040 .070
40 .018 .021 .031 .055 .096
50 .026 .030 .046 .08 .14
60 .041 .047 .071 .12 .22
L
Environment n~
:~o”’
T.
s-
‘;5)3 :1’’’:0’
(i)‘;;
Ambient Temperature (“C)
Ratio of Operating to Rated Voftage

GB
GF
GM
N~
7 1.0
2.0
12
6.0
Operating voltage is the sum of applied D.C. vottage Nu 17
*IC 10
12
‘IF
28
Capacitance Factor - Xcv *UC
*UF 35
Capacitance, C (vF) ~cv
27
*RW
3.2 .40
SF .50
62 .70
400 1.0 ~F 14
1600 1.3
4800 1.6 ML 38
12,000 1.9 c1 690
26,000 2.2
50,000 2.5
91,000 2.8
0.19
~cv = .32C
I

MIL-HDBK-217F
10.16 CAPACITORS, VARIABLE, CERAMIC

MIL-C-81 Cv Variable, Ceramic
kp = kbfiQZE Failures/l 06 Hours

(T= 85°C Max Rated) Quality Factor - nQ
(MIL-C- 1 Styles CV 11, 14, 21,31, 32,34,40, 41) Quality x~
I I
TA (Z) .1 .3 .5 .7 .9
MIL-SPEC 4
o .0030 .016 .086 .18 .37
10 .0031 .017 .069 .10 .39 Lower 20
20 .0033 .018 .073 .20 .41
30 .0036 .020 .080 .21 .45
40 .0041 .022 .089 .24 .50
50 .0047 .026 .10 .20 .59
60 .0058 .031 .13 .34 .72 Environment Factor - n=
L
70 .0076 .041 .17 .4s .94
80 .011 .058 .24 .63 1,3 I Environment I xcL
1 1
GB 1.0
Ab=.00224[(~)3 + 1].xp(l.,, (~)101)
GF 3.0
T = Ambient Temperature (“C) GM 13

s. Ratio of Operating to Rated Voftage
Ns 8.0
and peak A.C. voltage. Nu 24
AC 6.0
(T= 125°C Max Rated) ‘iF 10
(M IL-C-81 Styles CV 35, 36) 37
‘Uc
stress
TA (“C) .1 .3 .5 .7 .9 *UF 70
o .0028 .015 .061 .16 .35 36
‘RW
.0028 .015 .062 .17 .35
;: .0029 .016 .064 .17 .36 SF .40
30 .0030 .016 .066 ,18 .37
40 .0031 .017 .068 .18 .39 MF
50 .0033 .018 .072 ,19 .41
ML 52 1
.0035 .019 .077 .21 .44 I
% .0038 .021 .084 .23 .48 CL
80 .0043 .023 .095 .25 .54
90 ,0050 .027 .11 .30 .63
100 .0062 .033 .14 .36 .76
110 .0079 .043 .17 .47 .98
120 .011 .059 .24 .64 1.4
~-.00224[(~)3+ l]exp(l.59(~)101)

10-27

MIL-HDBK-217F
10.17 CAPACITORS, VARIABLE, PISTON TYPE

MIL-C-14409 Pc Variable, Piston Type, Tubular Trimmer
Lp = XbXQnE Failures/l OG Hours
Base Failure Rate - ~ Quality Factor - nQ

(T. 125°C Max Rated) 4
Quality ZQ
(MIL-C-14409 Styles G, Ii, J, L, T) h 4
Stress
.1 .3 .5 .7 .9 MIL-SPEC
I’v
TA (“C)
.0030 .0051 .013 .031 .063

1: .0041 .0070 .010 .042 .085 Lower
20 .0055 .0094 .024 .057 .11
30 .0075 .013 .033 .077 .16
40 .010 .017 .044 .10 .21
50 .014 .024 .060 .14 .29 Environment Factor - ZE
60 .019 .032 .082 .19 .39
70 .025 .043 .11 .26 .53 Environment
80 .034 .059 .15 .35 .71
90 .047 .079 .20 .48 .96 GB
100 .063 .11 .27 .65 1.3
110 .086 .15 .37 .88 1.8 GF 3.0
I
120 .12 .20 .51 1.2
-+-l
2.4
GM
$=7.3 X1 O-7 [(~)3+ l]exP(1201 (%%) ) Ns

,
T= Ambient Temperature (“C) Nu 18
Ratio of Operating to Rated Vottage
~er~ting vohage is the sum of applied D.C. vohage Alc 3.0
and pe ak A.C. voltage.
‘IF 4.0
%c 20
150”C Max Rated)
(T=
(MIL-C-1 4409 Characteristic 0)
‘UF 30
Stress
.1 ,3 .5 .7 .9 ‘RW 32
o .0019 .0032 .0081 .019 .038 SF .50
10 .0025 .0042 .011 .025 .051
20 .0033 .0056 .014 .034 .068 MF 18
30 .0044 .0074 .019 .045 ,09
40 .005s .0099 .025 .060 .12 ML 46
50 .0077 .013 .034 .079 .16
.010 .018 .045 .11 .21 c, 830
% .014 .023 .060 .14 .28
80 .018 .031 .079 .19 .38
90 .024 .041 ,11 .25 .50
100 .032 .055 .14 .33 .67
110 .043 .073 .19 .44 .89
120 .057 .097 ,25 .59 1.2
130 .076 .13 .33 .78
140 .10 .17 .44 1.0 4::
150 .13 .23 ,59 1.4 2.8
4
kb = 7.3 x 10-7
T =
[(33+
Ambient Temperature (“C)
11ex421
(-)) ,

and peak A,C. voltage.

—- -- .- —1 m . .. ----
-r– ---- l—— 1 --
I
I
MIL-HDBK-217F
10.18 CAPACITORS, VARIABLE, AIR TRIMMER

MIL-C-92 CT Variable, Air Trimmer
kp = kb~QmE Failures/l 06 Hours
Base Failure Rate - ~ Environment Factor - z~

\ -- - ...-. . .-. --, Environment nE
stress
1A (“C) .1 .3 .5 .7 .9 GB 1.0
GF 3.0
0 .0074 .013 .032 .076 .15
% 13
10 .010 .017 .044 .10 .21
NS 8.0
20 .014 .023 .059 .14 .28
NU 24
30 .018 .031 .08 .19 .38
*IC 6.0
40 .025 .042 .11 .26 .52
‘IF 10
50 .034 .057 .15 .35 .70 37
‘Uc
60 .046 .078 .20 .47 .94
*UF 70
70 .062 .10 .27 .63 1.3 ‘RW 36
80 .083 .14 .36 .85 1.7 SF .50

MF 20
ML 52
- 1.92 XIO-6[(-&)3+ 1] .wfos (~)
%
CL 950
Operating voltqe is the sum of applied D.C. vottag~

Quality Factor - XQ
Quality ~Q
MIL-SPEC 5
Lower 20
10-29

------ r--
MIL-HDBK-217F
10.19 CAPACITORS, VARIABLE AND FIXED, GAS OR VACUUM —

M IL-C-23 183 CG Gas or Vaa.mm Dielectric, Fixed and Variable, Ceramic or
Glass Envebpe
Lp = kbXcFXQnE Failures/l OG Hours

(T. 85°C Max Rated) (T= 125°C Max Rated)
(Styles CG 20,21,30,31,32,40-44, 51,60-64, (stvl@
\ -.= .- CG
-- .50)
-.-,
Strm8
stress m .1 .3 .5 .7 .9
.1 .3 .5 .7 .9
0 .014 .075 .37 .82 1.7
0 .015 .081 .33 .88 1.9
10 .016 .084 .34 ,92 1.9 10 .014 .077 .31 .83 1.8
20 .017 .090 .37 .98 2.1
30 .018 .098 .40 1.1 2.2 20 .014 .078 .32 .85 1.8
40 .020 .11 .45 1.2 2.5
50 .024 .13 .52 1.4 2.9 30 .015 .08 .33 .88 1.9
60 .029 .16 .64 1.7 3.6
70 .038 .20 .83 2.2 4.7
40 .016 .084 .34 .91 1.9
80 .054 .29 1.2 3.2 6.6
50 .016 .088 .36 .96 2.0
Ab=.o112
[(~)3+ 11”’’(15’
(=)’O1; 60 .018 .095 .39 1.0 2.2
T= Ambient Temperature (“C) 70 .019 .10 .42 1.1 2.4

80 .022 .12 .48 1.3 2.7
and peak A.C. voltage. 90 .025 .14 .55 1.5 3.1
100 .031 .17 .68 1.8 3.8

(T= 100”C Max Rated) 110 .04 .21 .87 2.3 4.9
(Styles CG 65, 66)
120 .055 .29 1.2
Stress
.1 .3 .5 .7 .9
o .014 .078 .30 .85 1.8

.015 .080 .33 .87 1.8
1:
30
.015
.016
.084
.088
.34
.36
.91 1.9
.96
40 ,018 .095 .39 1.0 ;;; T= Ambient TemWrature (“C)
50 .020 .11 .43 1.2 2.4 s= Ratio of Operating to Rated Vottage
60 .022 .12 .49 1.3 2.8
70 .027 .14 !59 1.6 3.3 Operating vottage is the sum of applied D.C. vottage
80 .034 .18 .74 2.0 4.2 and pa ak A,C. voltage.
90 .045 .24 .99 2.7 5.6
100 .066 .36 1.5 3.9 8.2
~=.0112 [(+)3+ l]exP(l.59 (~)lol)


and oeak A.C. voltaae.
10-30

I .!
... .,, ... . . .,.
,..
MIL-HDBK-217F
I
10.19 CAPACITORS, VARIABLE AND FIXED, GAS OR VACUUM
Configuration Factor - TCCF Environment Factor - fiE

--
Conf~ratkm Environment ~E
‘C F
% 1.0
Fixed .10
GF 3.0
Variable 1.0
GM 14
Ns 8.0
Nu 27
QuaIii Factor- XQ AC 10
Quality ~Q
18
‘IF
3.0 *UC 70
MIL-SPEC
*UF 108
Lower 20
‘RW 40
SF .50
MF NIA
ML NIA
cL NIA

MIL-HDBK-217F
10.20 CAPACITORS, EXAMPLE —
Example
Given: A 400 VDC rated capacitor type CQ09A1 KE153K3 is being used in a fixed ground
environment, 59C component ambient temperature, and 200 VDC applied with 50 Vrms
@ W Hz. The Capadtor iS Ming procured in full accodance with the applicable
specification.
The letters “CQ- h the type designation hdkate that the specification is MIL-C-19978 and that it is a Non-
Established Reliability qualii level. The Ist “K” in the designation indicates characteristic K. The “E” in
the designation corresponds to a 400 vott DC rating. The “153” in the designation expresses the
capacitance in pioofarads. The first two digits are signifiint and the third is the number of zeros to follow.
Therefore, this capacitor has a capacdance of 15,000 picofarads. (NOTE: Picos 10-12, p = 10~
The appropriate model for CQ style capacitors is given in Section 10.3. Based on the given information
the following model factors are determined from the tables shown in Section 10.3. Voltage stress ratio
must account for both the applied DC volts and the peak AC vottage, hence,
S= DC Volts Applied + ~2 (AC Volts Armlied~ =

s = .68
DC Rated Voltage
lb = .0082 Substitute S = .68 and TA = 55°C into equatbn shown

with CharacteristicK ~ Table.
7ECV = .94 Use Table Equation (Note 15,000 pF = .015 pF)

7CQ = 10
~E = 2.0
~ = ~ ICcv nQ XE = (.0082)(.94)(1 O)(2) = .15 FailuresJl 06 Hours
10-32

MIL-HDBK-217F
11.1 INDUCTIVE DEVICES, TRANSFORMERS

MIL-T-27 TF Audio, Power and High Power Pulse
MIL-T-21038 TP Low Power Pulse
MIL-T-55831 IF, RF and Discriminator
Xp = lb~QXE Failures/l 06 Hours

,
Maxinwm Rated OperatingTemperature (“C)
TH~ (%) ~~ 1 1052 ,~3 , =4
1705 >1706
30 .0024 .0023 .0022 .0021 .0018 .0016
35 .0026 .0023 .0023 .0022 .0018 .0016
40 .0028 .0024 .0024 .0022 .0019 .0016
45 .0032 .0025 .0025 .0022 .0019 .0016
50 .0038 .0027 .0026 .0023 .0020 .0017
55 .0047 .0029 .0027 .0023 .0020 .0017
60 .0060 .0032 .0029 .0023 .0021 .0017
65 .0083 .0035 .0030 .0024 .0021 .0017
70 .012 .0040 .0033 .0025 .0022 .0017
75 .020 .0047 .0035 .0026 .0023 .0017
80 .036 .0057 .0039 .0027 .0024 .0017
85 .075 .0071 .0043 .0028 .0024 .0017
90 .0093 .0048 .0029 .0025 .0018
95 .013 .0054 .0031 .0026 .0018
100 .019 .0062 .0033 .0027 .0018
105 .030 .0072 .0035 .0028 .0018
110 .0085 .0038 .0030 .0019
115 .010 .0042 .0031 .0019
120 .013 .0046 .0032 .0019
125 .016 .0052 .0034 .0020
130 .020 .0059 .0036 .0020
135 .0068 .0038 .0021
140 .0079 .0040 .0021
145 .0095 .0042 .0022
150 .011 .0044 .0023
155 .014 .0047 .0024
160 .0050 .0025
165 .0053 .0026
170 .0056 .0027
175 .0029
180 .0030
185 .0032
- -
NOTE: Themo }1s are valtd onl if THS IS not above the temperature rating for a given insulation class.
1 fiHS + 273\ lSs

“ \..oolat?xp ---= MIL-T-27 Insdatmn Class 0, MIL-T-21038 Insulation Class C?,and MlL-T-5563I tnsuhon Class O.”
\ )
MIL-T-27 Insulation Class R, MIL-T-21 038 Insulation Class R, and MIL-T-55831 Insulation Class A.”
3 +-’18’*F=)87 MIL-T-27 Insulation Class S, MlL-T-2I 038 Insulation Class S, md MIL-T-S5631 Insulation Class B.”
4 +’=m2ex’c”:~273)i0 MIL-T-27 Insulation Class V, MIL-T-21 038 Insulation Class T, and MIL-T-s5631 Insulation Class C,*
‘ ~-om’-’(”:”)””)” MIL-T-27 Insulation Class T and MIL-T-21 038 Insulation Class U.*
MIL-T-27 Insulation Class U and MIL-T-21038 Insulanon Class V “

‘ ~-m’w”x’(TH:;:73)8”4
. Hot Spot Temperature (%), See Se&h 11.3. “Rotor to Transformer Application Not- tor Oatormlnstlon of Irwulatlon Class
‘w
I
11-1

MIL-HDBK-217F
11.1 INDUCTIVE DEVICES, TRANSFORMERS
Quality Factor - ~ TRANSFORMER APPLICATION NOTE:

Insulation Class and Family Type
Family Type” 1 MIL-SPEC I Lower Determination
I
Pulse Transformers 1.5 5.0
I MIL-T-27 Example Deslgnatlon
Audio Transformers 3.0 7.5
TF 4 R 01 m 576
8.0 30
Power Transformers and Filters
I
MIL-T-27
I
Grad,
I
Imldabrl
I
Fatity ~
I
RF Transformers 12 30 Clasa symbol
I
Family Type Codes Are:

● Refer to Transformer Appllcatlon Note for
Determlnatlon of Family Typ. Power Transformer and Filter: 01 thru 09, 37 thru 41
Audio Transformer: 10 thru 21, 50 thru 53
Environment Factor - ZE Pulse Transformer: 22 thru 36, 54
Environment ~E
MI L-T-21038 Example Designation
GB 1.0
TP 4 Q X11 OO8COO1
GF 6.0
12
I I
Grade
I
% MIL-T-21038 Insulation
Class
Ns 5.0
Nu 16
MIL-T-55631. The Transformers are Designated
6.0 with the following Types, Grades and Classes.
Alc
8.0 Type I . Intermediate Frequency Transformer
‘IF
Type II Radio Frequency Transformer
*UC 7.0 Type Ill . Discriminator Transformer
‘UF 9.0
Grade 1 For Use When immersion and
24 Moisture Resistance Tests are
‘RW Required
SF .50 Grade 2 For Use When Moisture Resistance
Test is Required
MF 13 Grade 3 . For Use in Sealed Assemblies
34 Class O 85oC Maximum Operating

Temperature
610 Class A . 105°C Maximum Operaiing
Temperature
Class B - 12SeC Maximum Operating
Temperature
Class C > 125°C Maximum Operating
Temperature
The class denotes the maximum operating

temperature (temperature rise plus maximum
ambient temperature).
11-2

MIL-HDBK-217F
11.2 INDUCTIVE DEVICES, COILS

MIL-C-15305 Fixed and Variable, RF
MIL-C-3901O Moided, RF, Est. Rel.
Xp = kbnc7cQ7LEFailures/l 06 Hours
Base Failure Rate - ~ Construction Factor - Xc

Maximum Operating Temperature ~C) Construction Zc
TH~ (oC) 851 1052 1253 1504
30 .00044 .00043 .00039 .00037 Fixed 1
35
40
45
50
.00048
.00053
.0006
.00071
.00087
.00044
.00046
.00048
.00051
.00055
.0004
.00042
.00043
.00045
.00048
.00037
.00037
.00038
.00038
.00039
Variable
I 2
E .0011 .0006 .00051 .0004

65 .0015 .00067 .00054 .00041
70 .0023 .00076 .00058 .00042
75 .0037 .00089 .00063 .00043 Quality Factor - ~
80 .0067 .0011 .00069 .00044
85 .014 .0013 .00076 .00046 Quality 7rQ
90 .0018 .00085 .00047
95 .0024 .00096 .0005 s .03
100 .0036 .0011 .00052
105 .0057 .0013 .00055
110 .0015 .00059 R .10
115 .0018 .00063
120 .0022 .00068 P .30
125 .0028 .00075
130 .00083 M 1.0
135 .00093
140 .0011 MIL-C-15305 4.0
145 .0012
150 0014
Lower 20
NOTE: The models are valid onty if THS is not above
the tern perature rating for a given insulation class.
“ ~=mmex’(’”:~:’’)””’
MlL-C- 15305
,n$u~onc,-$o
2
MlL-C-l 5305
InsulationClass A and
MIL.C-3901 o
‘=m’gexp(’”:;:’”)” ,~u~~c,wA,
3.
MIL-C-15305
4.
~--19exp(TH::27a)e”7 InsulationClass B and
MIL-C-3901O
InsulationChseeB.”
MIL-C-I 5305
InsulationClass C and
MIL-C-3901O
InsulationClass F .“
= Hot Spot Temperature(“C), See Section f 1.3.

‘HS
“Refer to Coil Appllcetlon Note for Determhmtlon of

Inaulatlon Claes.
11-3

MIL-HDBK-217F
11.2 INDUCTIVE DEVICES, COILS —
Environment Factor - ZE COIL APPLICATION NOTE: Infsulatlon Class

Determination From Part Designation
Environment ~E
MlL-C-l 5305. All parts in this specification are
GB 1.0 R.F. wils. An example type designation is:
GF 4.0
LT 4 001
% 12
I I
Ns 5.0 MIL--G153O5 Insulation Famify
Class Code
Nu 16
Ac 5.0 The codes used for the Insulation C&ss are:

Class C: 1,2,3
‘IF
7.0 Class B: 4, 5, 6
Class O: 7, 8, 9
*UC 6.0
Class A: 10,11,12
*UF 8.0
‘RW 24 MI L-C-3901 O. An example type designation per

this specification is:
SF .50
M 39010/01 A
MF 13
ML 34 I
Military
I
Document
I
Insulation
CL 610 Designator Sheet class
Number
11-4

MIL-HDBK-217F
11.3 INDUCTIVE DEVICES, DETERMINATION OF HOT SPOT TEMPERATURE
, Hot Spot temperature can be estimated as follows:
THS=TA+ 1.1 (AT)
where:
THS = Hot Spot Temperature (“C)
TA = Inductive Device Ambient Operating Temperature (“C)
AT = Average Temperature Rise Above Ambient (“C)
AT can either be determined by the appropriate “Temperature Rise- Test Method paragraph in the device base
specification (e.g., paragraph 4.8.12 for M IL-T-27 E), or by approximation using one of the procedures
described below.
AT Approximation
Infnrmatinn
.. ... .. ... .
.“. ,
Knnwn
,., ,”....
1 AT Annrqximation
-, w
.yp. —. —
1. MIL-C-3901 O Slash Sheet Number

MIL-C-39010/l C-3C, 5C, 7C, 9A, 10A, 13, 14 AT = 15°C
tvllL-c-39010/4C, 6C, 8A, 11, 12 AT = 35°C
2. Power Loss AT= 125 w@

Case Radiating Surface Area
3. Power Loss
AT= 11.5 WL/(Wt.).6766
Transformer Weight
4. Input Power
AT = 2.1 w,/(w@66
Transformer Weight
(Assumes 80% Efficiency)
w~ = Power Loss (W)
A = Radiating Surface Area of Case (in2). See below for MIL-T-27 Case Areas
wt. = Transformer Weight (Ibs.)
w, = Input Power (W)
NOTE: Methods are listed in preferred order (i.e., most to least accurate). MIL-C-3901 O are micro-
miniature devices with surface areas less than 1 in2. Equations 2-4 are applicable to devices with
surface areas from 3 in2 to 150 in2. Do not include the mounting surface when determining radiating
surface area,
MIL-T-27 Case Radiating Areas (Excludes Mounting Surface)

Case Area (in*) Case Area {in2) Case Area (in2)
AF 4 GB 33 LB 82
AG 7 GA 43 LA 98
AH 11 HB . 42 MB 98
AJ 18 HA 53 MA 115
EB JB 58 NB 117
EA ;; JA 71 139
FB 25 KB 72 :: 146
FA 31 KA 84
.
11-5’

I
1
MIL-HDBK-217F
I
12.1 ROTATING DEVICES, MOTORS
I
I
The following failure-rate model appiies to motors with power ratings betow one horsepower. This model is applicable to
polyphase, capacitor start and run and shaded pole motors. It’s application may be extended to other types of fractional
horsepower motors utilizing rolling element grease packed bearings. The rndel is dictated by two failure modes, bearing
failures and winding failures. Application of the model to D.C. brush motors assumes that brushes are inspected and
replaced and are not a failure mode. Typical appkations include fans and Mowers as well as various other motor
applications. The model is based on Referenoe 4, which oontains a more comprehensive treatment of motor life precktion
methods. The reference should be reviewed when bearing loads exceed 10 percent of rated bad, speeds exceed 24,000
rpm or motor back include motor speed slip of greater than 25 percent.
The instantaneous failure rates, or hazard rates, experienced by motors are not oonstant but increase with time. The
failure rate model in this sectbn is an average failure rate for the motor operating over time period “t”. The motor operating
time period (t-hours) is selected by the analyst. Each motor must be replaced when it reaches the end of this perbd to
make the calculated ~ valid. The averaga failure rate, ~, has been obtained by dividing the cumulative hazard rate by t,
and can be treated as a constant failure rate and added to other part failure rates from this Handbook.
~2 1
=— x 106 Failures/l 06 H0ur6
%[
UB 3+~ 1
Bearing & Winding Characteristic Life - aB and aw

I
TA ~C) aB (Hr.) aw (Hr.) TA (oC) aB (Hr.) aw (Hr.)
-40 310 1.9e+08 55 44000 2.3e+05

-35 310 1.2e+08 60 35000 1.8e+05
-30 330 7.4e+07 65 27000 1.4e+05
-25 370 4.78+07 70 22000 1.1 e+05
-20 460 3.1 e+07 75 17000 8.8e+04
-15 660 2.0e+07 80 14000 7.0e+04
-lo 1100 1.4e+07 85 11000 5.7e+04
-5 1900 9.2e+06 9100 4.6e+04
o 3600 6.4e+06 E 7400 3.8e+04
5 6700 4.5e+06 100 6100 3.le+04
10 13000 3.2e+06 105 5000 2.5e+04
15 23000 2,3e+06 110 4200 2.1 e+04
20 39000 1.6e+06 115 3500 1.8e+04
25 60000 1.2e+06 120 2900 1.5e+04
30 78000 8.9e+05 125 2400 1.2e+04
35 86000 6.60+05 130 2100 1.oe+04
40 80000 5.oe+05 135 1700 8. 9e+03
45 68000 3.8e+05 140 1500 7.5e+03
-1
50 55000 2.9e+-5
2357
2’534 ‘7A + 273 1
aB = 10 ( ) +
1
4500
20- 7A + 273
[ 10 ( ) + 300
2357
[ TA + 273 1 .83]
-
aw = 10
aB = Weibull Characteristic Life for the Motor Bearing
aw s Weibull Characteristic Life for the Motor Windings
TA - Ambient Temperature (“C)
t = Motor Operating Time Period (Hours)
NOTE: See next page for method to calculate aB and aw when temperature is not constant.
12-1
MIL-HDBK-217F
12.1 ROTATING DEVICES, MOTORS
%.ala Ilation ‘Or cYcled ‘eWr*ure
The following equation can be used to calculate a weghted characteristic life for both bearings and windings
(e.g., for bearings substitute aB for all a’s in equation).
h1+h2+h3+------hm
hm
—+ —+ — +-------—
am
al a2 a3
where:
a= either (%Bor aw
h, = Time at Temperature T,
h2 = Time to Cycle From Temperature T, to T3
h3 = Time at Temperature T3
hm = Time at Temperature Tm
al = Bearing (or Winding) Life at T,
= Bearing (or Winding) Life at T2

‘2
T, + T3 T3 + T,
NOTE: T2=2, T4=2
T3
i=
T2
T1
hl h2 h3
Hours (h)
Thermal Cycle
12-2

MIL-HDBK-217F
12.2 ROTATING DEVICES. SYNCHROS AND RESOLVERS
DESCRIPTION
Rotating Synchros and Resolvers
Lp = XbKSZNXE Failures/l 06 Hours
NOTE: Synchros and resolvers are predominately used in service requiring only slow and infrequent motion.
M-echanical wearout problenis are infrequent so that the electrical failure mode dominates, and no
mechanical mode failure rate is required in the model above.
Base FaiUre Rate - ~ Number Of Brushes Factor - ~N

Tr (“C) TF (%) Number of Brushes %N
30 .0083 85 .032 2 1.4

35 .0088 90 .041
40 .0095 95 .052 3 2.5
45 .010 100 .069
50 .011 105 .094 4 3.2
55 .013 110 .13
60 .014 115 .19
65 .016 120 .29
70 .019 125 .45 Environment Factor - YIC=
75 .022 130 .74 L
80 .027 135 1.3 Environment ~E
GB 1.0
GF 2.0
= .00535 exp
% (T~:~3 )85 GM 12
TF = Frame Temperature (“C) NS 7.0

Nu 18
If Frame Temperature is Unknown Assume
TF .40 ‘C + Ambient Temperature Aic 4.0
‘IF 6.0
*UC 16
‘UF 25
Size Factor - XS
*RW 26
%s
DEVICE Size 8 or Size 10-16 Size 18 or SF .50
TYPE Smalier Larger MF 14
Synchro 2 1.5 1 ML 36
I
Resolver
CL 680
3 2.25 1.5
I
12-3

—
MIL-HDBK-217F
12.3 ROTATING DEVICES, ELAPSED TIME METERS —
DESCRIPTION
Elapsed Time Meters
kp = kbycE Failures/l 06 Hours
Base Failure Rate - ~ w

Environment Factor - Xr
b
Type k~ Environment ZE
% 1.0
A.C. 20
GF 2.0
Inverter Driven 30
GM 12
Commutator D.C. 80
N~ 7.0
Nu 18
*IC 5.0
Temperature Stress Factor - ZT 8.0
‘IF
Operating T (°C)/Rated T (“C) XT
16
*UC
o to .5 .5 ‘UF 25
*RW 26
.6 .6
SF .50
.8 .8
MF 14
1.0 1.0 ML 38
CL NIA
12-4

MIL-HDBK-217F
12.4 ROTATING DEVICES, EXAMPLE
Example
Given: Fractional Horsepower Motor operating at a thermal duty cycle of: 2 hours at 10O°C, 8
hours at 20”C, 0.5 hours from 100°C to 20”C, and 0.5 hours from 20°C back to 100”C.
Find the average failure rate for 4000 hours operating time.
The basic procedure is to first determine operating temperature at each time intewai (or averge
temperature when traversing from ow temperature to another, e.g. T2 = (100 + 20/2 = ~“c. ~te~in
aB and aw at each temperature ati then use these vakes to determine a wei@kf average ~ and aw
to use in the ~ e~ation.
h, = 2 hr. T, = 1 OO”C; aB = 6100 hours; aw = 31000 hours
h2 = h4 = 0.5 hr. T2 = 60%; aB = 35000 hOUfS; aw = 180000 hOUR
h3 = 8 hr. T3 = 20”C; aB = 39000 hours; aw = 1600000 hours
2 +0.5+8+0.5
aB = = 19600 hours
2 0.5 8 0.5
6100 + 35000 + 39000 + 35000
2 +0.5+8+0.5
aw = = 146000 hOUB
2 0.5 8 0.5
31000 + 180000 + 1600000 + 180000
= (3++”0’
=
( (4000)2
(19600)3
1
+ 146000
)
X106
= 9.0 FaihxeW 06 Hours
12-5
MIL-HDBK-217F
13.1 RELAYS, MECHANICAL
MIL-R-5757 MIL-R-19648 Mechanical Relay
MIL-R-6106 MIL-R-83725
MI L-R-19523 MIL-R-83726 (Except Class C, Solid State Type)
MIL-R-39016
Lp = &XLZCZCYCXFXQXE Failures/l 06 Hours
Base Failure Rate - ~ Load Stress Factor - XL

u
—
Rated Temperature I Load Typo -
TA (’W) 85%+ 125”c~ s Resist ive’ lnductive2 Lamp3
.0060 .0059 .05 1.00 1.02
30 .0061 .0060 .10 1.02 1.06 ; :Z
35 .0063 .0061 .20 1.08 1.28 2.72
40 .0065 .0062 .30 1.15 1.?6 9.49
45 .0068 .0064 .40 1.28 2.72 54.6
50 .0072 .0066 .50 1.48 4.77
55 .0077 .0068 .60 1.76 9.49
60 .0084 .0071 .70 2.15 21.4
.0094 .0074 .80 2.72
% .011 .0079 .90 3.55
75 .013 .0083 1.00 —
80 .016 .0089
85 .020 .0097 ~2 S2
90 .011 1. XL = @Xp ,8
3. XL = exp ~
95 .012 () ()
100 .013
105 .015 s2~= Operatino Load Current
110 2. ~L = e’p ~
.018 Rated Resistive Load Current
()
115 .021
120 .025 For single devices which switch two different load types,
125 .031
evaluate XL for each possible stress load type
combination and use the worse case (largest ZL).
1“%= 00’5’ex’cA::73)’5”7 Cycling Factor - ~YC

Cycle Rate
2%= 00Mex’cAJ~73)’04 (Cycles per Hour)
21.0
‘CYC
(MI L-SPEC)
10
i-io~
TA . Ambient Temperature (oC)
<1.0 0.1
Cycle Rate
(Cycles per Hour) WC
Contact Form Factor - ~ (Lower Quality)
(Applies to Active Conducti ng Contacts) Cycles per Hour 2
r >1000 ( 100 )
I Contact Form I ~c
Cycles per Hour
DPST 1.50
10-1000 I 10
SPDT 1.75
3PST 2.00
4PST 2,50 NO~ :Values of ZCYC for cycling rates beyond the
DPDT 3.00 basic design limitations of the relay are not valid.
‘PDT 4.25 Design specifications should be consulted prior to
4PDT 5.50
I 6PDT 8.00 ‘Va’uation
‘f ‘CYC.
I
13-1
I
I
II
h41L-HDBK-217F
13.1 RELAYS, MECHANICAL
Oualhy % 1
I i b
I
I
con- ~tion Construction Type
R .10
P .30
x I .45 I Dry Rwd 6 18
u .60 Ifbwmv[ I MofcuwWottod 11131.
d In@
M
L
Non-Est.Rol.
:::
3.0
I
6 12
Envimnmont Factor -~ ArmuW(lmngand 5 10
$tE
,
Environment MIL-SPEC LowOrOudity
GB 1.0 2.0 B8mcul Ammtuf6110 20
Poi8fizod AwnmJro(short) 10 20
% 2.0 5.0 100 100
I
GM 15 u
MwcuryWetted
NS 8.0 24 Hqh Spood ArrnmW@(081anc0d A 2
27 78 6 M
N
i
*IC
A~
I 9.0
7.0 15
20
Elut mfiic 9 12
Auc 11 20 L&w I Tiu90Dd8y,

1 -1-1
12 36 Mching,
%F MqymtiZ 10
Uucury Wmttod 5
46 1’40 B8bcod Arwnturo 5 10
5-20 vaCwm (Gk!m) 20 40
SF .50 1.0
w Vaafwl (CkmmiC) 5 10
Mdiurn An
% I
25 72
IPm- I short] ‘ - 11 I
I
% 66
cl WA WA
2 6
CWMctom (short) 7
w m Wchankd Latching 12 z
Cwu?t) OatuK#d
. Ann8tufo 10 20
I 1~ I 5 1 10 I

Iw 1 I I ,. =1 I -. I
MIL-HDBK-217F
13.2 RELAYS, SOLID STATE AND TIME DELAY
MIL-R-28750 Relay, Solid State
MIL-R-83726 Relay, Time Delay, Hybrid and Solid State
The most accurate method for predicting the failure rate of solid state (and solid state time delay) relays is to sum
the failure rates for the individual components which make up the relay. The individual component failure rates
can either be calculated from the models provided in the main body of this Handbook (Parts Stress Method) or
from the Parts Count Method shown in Appendix A, depending upon the depth of knowledge the analyst has
about the components being used. If insufficient information is available, the following cfefautt model can be
used:
~ = ~X@E Failure@106 Hours
Base Faiiure Rate - ~ Environment Factor - Xr

Relay Type Environment nE
GB 1.0
Solid State .40
GF 3.0
Solid State Time Delay .50
GM 12
Hybrid .50
NS 6.0
Nu 17
*tc 12
Quality Factor - ZQ
‘IF 19
Quality ~Q
‘Uc 21
MIL-SPEC 1.0 *UF 32
I Lower
I 4.0 ‘RW
SF
MF
23
12
.40
ML 33
CL 590
13-3

,
+
MIL-HDBK-217F
14.1 SWITCHES, TOGGLE OR PUSHBUTTON
MIL-S-3950 MIL-S-22885 Snap-action, Toggle or Pushbutton,
MIL-S-8805 MIL-S-83731 Single Body
MIL-S-8834
Xp = kb7tcyc7cL7rc7zEFailures/l 06 Hours
Base Failure Rate - ~ Contact Form and Quantity Factor - xc

Description I MIL-SPEC 1 Lower Quality Contact Form xc
I I
SPST 1.0
Snap-action .00045 .034 DPST 1.5
SPDT 1.7
Non-snap Action
I .0027
I .040 3PST
4PST
2.0
2.5
DPDT 3.0
Cycling Factor - Zcyc 3PDT 4.2
b
Switching Cycles 4PDT 5.5

*CYC 8.0
per Hour 6PDT
s I Cycle/Hour 1.0
Environment Factor - nE
>1 Cycle/Hour Number of Cycles/Hour Environment ~E
GB 1.0
Load Stress Factor - ~L
GF 3.0
Stress Load Type -
s Resistive Induct ive Lamp GM 18
0.05 1.00 1.02 1.06 Ns 8.0
0.1 1.02 1.06 1,28
0.2 1.06 1.28 2.72 NU 29
0.3 1.15 1.76 9.49
0.4 1.28 Alc 10
2.72 54.6
0.5 1.48 4.77 18
0.6 1.76 9.49 ‘IF
0.7 2.15 21.4 ‘Uc 13
0.8 2.72
*UF 22
0.9 3.55
1.0 4,77 46
‘RW
Operating Load Current SF .50

s=
Rated Resistive Load Current MF 25
ML 67
XL = exp (S/.8)2 for Resistive Load
CL 1200
XL = exp (S/.4)2 for Inductive Load
~L = exp (S/.2)2 for Lamp Load
NOTE: When the switch is rated by inductive load,

then use resistive XL.
14-1

I 1,., *mm.. I, ,- I .AA1.4WI .4 WI.*- fi .4Knw I

MIL-HDBK-217F
14.2 SWITCHES, BASIC SENSITIVE T
MIL-S-88f)5 Basic Sensitive
Ap =L7C
~ ~YCXLZE Failures/l 06 Hours
Base Failure Rate - ~ Cycling Factor - ncyc

Switching Cycles ‘CYC
%=%’JE’%C (if Actuation Differential is per Hour
>0.002 inches)
~ = ~E + n~ (if Actuation Differential is

I 51 Cycle/Hour
I
1.0
I
<0.002 inches)
I I
>1 Cycle/Hour Number of
Cycles/Hour
n = Number of Active Contacts
I
Description MIL-SPEC Lower Quality
%E .10 .10
Environment Factor - xc
.00045 .23 Environment

%C
GB 1.0 I
‘bO .0009 .63
GF 3.0
Load StreSs Factor -XL % 18

Stress Load Type Ns 8.0
s Resistive Inductive Lamp
0.05 1.00 1.02 1.06 N“ 29
0.1 1.02 1.06 1.28 10
0.2 1.06 1.28 2.72 *IC
0.3 1.15 7.76 9.49 ‘IF 18
1.28 2.72 54.6
13
::: 1.48 4.77 ‘Uc
0.6 1.76 9.49 22
0.7 2.15 21.4 ‘UF
0.8 2.72 *RW 46
0.9 3.55
1.0 4.77 SF .50
MF 25
Operatin~ Load Current
s= ML 67
Rated Resistive Load Current
Ci 1200
nL = exp (S/.8)2 for Resistive Load
NOTE: When the Switch is Rated by Inductive

Load, then use Resistive XL.
I 4-L

MIL-HDBK-217F
14.3 SWITCHES, ROTARY
MIL-S-3786 Rotary, Ceramic or Glass Wafer, Silver Alloy Cotiacts
kp = lb7ccycKL7cE Failures/l 06 Hours
Base Failure Rate - ~ Cycling Factor - ~yc

b
Switching Cycles ‘CYC

Base failure rate model (~: per Hour
%=%E’%F (for Cemrnc RF Wafers)

I s 1 Cycle/Hour
I
1.0
(for Rotary Switch Medium

%=%E+”~G
Power Wafers) I > 1 Cycle/Hour
I Number of Cycles/Hour
n = Nu~r of Active co~ta~s
Description MIL-SPEC Lower Quality Environment Factor - n-

I v
Environment
‘b E .0067 .10
GB 1.0
‘bF .00003 .02
GF 3.0
%G .00003 .06 GM 18
N~ 8.0
Load stress Faotor - ~L
Nu 29
Stress m Load Type
s Resistive Inductive Lamp 10
Alc
0.05 1.00 1.02 1.06
0.1 1.02 1.06 1.28 ‘IF 18
0.2 1.06 1.28 2.72 13 -
0.3 1.15 1.76 9.49 %
0.4 1.28 2.72 54.6 ‘UF 22
0.5 1.48 4.77
0.6 1.76 ‘RW 46
9.49 1
0.7 2.15 21.4 SF .50
0.8 2.72
0.9 3.55 MF 25
1.0 4.77
ML 67
Operating Load Current CL 1200
s. ,
NOTE: When the Switch is Rated by Inductive Load,

then use Resistive XL.

,.
MIL-HDBK-217F
14.4 SWITCHES, THUMBWHEEL —
MIL-S-2271O Switches, Rotary (Printed Circuit) (Thumbwheel, ln-
Line and Pushbutton)
Zp = (~1 + XN %2) XCYCZLXE Failures/l 06 Hours
CAUTION: This model applies to the switching function only. The model does not consider the contribution of any
discrete components (e.g., resistors, diodes, lamp) which may be mounted on the switch. If significant
(relative to the switch failure rate), the failure rate of these devices must be calculated using the
appropriate sectionof this Handbook and added to the failure rate of the switch.
This model applies to a single switch seotion. This type of switch is frequently ganged to provide the
required function. The model must be applied to each section individually.
Base Failure Rate - kbl and %2

—— Cycfing Factor- XCYC
1 Description MIL-SPEC Lower Quality Switching Cycles

Der Hour I
‘CYC
I
I
%1
‘b 2
.0067
.062
.086
.089
I s 1 Cycle/Hour 1.0
I > 1 Cycie/Hour
I
Number of Cycles/Hour
I
Number of Active Contacts Factor - ZN
I ~N = Number of Active Contacts

I Environment
Environment Factor - x=
~E
Load Stress Factor - ZI GB 1.0

Stress Load Type GF 3.0
s Resistive inductive Lamp
18
0.05 1.00 1.02 1.06
0.1 1.02 1.06 1.28
N~ 8.0
0.2 1.06 1.28 2.72
0.3 1.15 1.76 9.49 Nu 29
0.4 1.28 2.72 54.6
0.5 1.48 4.77
Aic 10
0.6 1.76 9.49
0.7 2.15 21.4 ‘IF 18
0.8 2.72
0.9 3.55 13
‘Uc
1.0 4.77
22
‘U F
Operating Load Current ‘RW 46
s=
SF .50
MF 25
ML 67
XL = exp (S/.2) 2 for Lamp Load
CL 1200
NOTE: When the Switch is Rated by Inductive

Load, then use Resistive XL.
14-4

I MIL-HDBK-217F
14.5 SWITCHES, CIRCUIT BREAKERS
M IL-C-55629 Circuit Breakers, Magnetic, Unsealed, Trip-Free
MIL-C-83363 Circuit Breakers, Remote Control, Thermal, Trip-Free
MIL-C-39019 Circuit Breakers, Magnetic, Low Power, Sealed, TripFree Service
w-c-375 Circuit Breakers, MoJded Case, Branch Circuit and Service
I
= &cnUZQKE Failures/l 06 Hours

Quality Factor - XQ
Description Lb Quality *Q
I
1 i
1
/
I Magnetic
I
.020
I MIL-SPEC 1.0
I
I Thermal
I
.038
I
Lower 8.4
I
Thermal-Magnetic
I
.038
I *
Environment
Configuration Factor - XC
GB 1.0
Configuration Zc
GF 2.0
SPST 1.0 GM 15
DPST 2.0
3PST 3.0 Ns 8.0
4PST 4.0 Nu 27
An 7.0
‘IF 9.0
Use Factor - m t
u
*UC 11
Use lru
*UF 12
Not Used as a Power 1.0 *RW 46
OtiOff Switch
SF .50
Also Used as a Power 10 MF 25
On/Off Switch
ML 66
CL tWA
d
14-5

n7c I I 1 . ---- . ..A Ann
MIL-HDBK-217F
I
I 15.1 CONNECTORS, GENERAL (EXCEPT PRINTED CIRCUIT BOARD)
I
I
I SPECIFICATION” DESCRIPTION s
M
EDIFICATION*
.“C-3607
DESCRIPTION
Coaxial, RF
M IL-C-24308 Rack and Panel
M IL-C-28748 M .-c-3643
.M IL-C-28804 M .-C-3650
M IL-C-83513 M .-c-3655
M M .-C-25516
M L-C-5015 Cimdar M .-(2-3901 2
M IL-C-26482 M .-C-55235
M 1~ M .-c-55339
M L-C-38999 M .-C-3767 Power
L-C-81 511 M .-C-22992
I
●1JOTE: See following page for connector configurations. MIL-C-49142 Triaxial, RF
Ap = AbZ~ZpnE Failures/l 06 Hours
APPLICATION NOTE: The failure rate model is for a mated pair of connectors. It is sometimes desirable to assgn
half of the overall mated pair connector (i.e., single connector) failure rate to the line replaceable unit and half to the
chassis (or backplane). An example of when this would be beneficial is for input to maintainability prediction to allow a
failure rate weighted repair time to be estimated for both the LRU and chassis. This accounting procedure could be
significant if repair times for the two halves of the connector are substantially different. For a single connector divide kp by
two.
Base Faiture Rate - ~ Base Failure Rate - ~ (oont’d)

Insert Material*
Al f32
To (oC) & D4
.00006 .00025 .0021 .0038
‘ . ~= .020 ~xp ~-lsgz.o
.00008 .00033 .0026 .0048 ((0+=’)+ ~0x73)53’;
((.+
;: .00009 .00044 .0032 .0062
30 .00011 .00057 .0040 .0078
40
50
60
70
.00014
.00016
.00020
.00023
.00073
.00093
.0012
.0015
.0048
,0059
.0071
.0087
.0099
.013
,016
.020
2. ~= .431 exp
’7’)+
T-’073.6
(R:’y”)
((0+4+
80 .00027 .0019 .011 .026
3. ~= .190e~p T-1298.0
90
100
110
.00032
.00037
.00043
.0023
.0029
.0036
.013
.016
.020
.033
.043
.056
(%:7’)42’)
120 .00050 .0045 .024 .074
130 .00059 .0056 4. ~ = .770 exp ~-1528.8
140 .00069 .0070
((0+27’)+ ~0&:73)4”72)
150 .00080 .0087
160 .00094 .011
170 .0011 .014
To = Internal Contact Operating Temperature (“C)
180 .0013 .018
190 .0016 .022
200 .0019 .029 To = Connector Ambient Temperature + Insert
210 .0023 Temperature Rise
220 .0028
230 .0034 See folbwing page for Insett Temperature Rise
240 .0042 Determination.
250 .0053
r -
“ ff a mating pair of connectors uses two types of
insert materials, use the average of the base failure
rates for the two insert material types. See following
page for inserl material determination.

MIL-HDBK-217F
15.1 CONNECTORS, GENERAL (EXCEPT PRINTED CIRCUIT BOARD)
Insert Material
— Determination
— Insert Tempe rature Rise (AT “I ) Determination
‘-Possible Insert ContacI
Materials 20 16 12
Conf guration Specification A B ‘c D * 2 1 T
Rack and Panel MIL-C-28748 x 3 8 5 2 1
M IL-C-83733 x 4 13 8 4
MIL-C-24308 x x 5 19 13 5 ;
M IL-C-28804 x x 6 27 18 8 3
MIL-C-83513 x x 7 36 23 10 4
8 46 30 13 5
Circular MIL-C-5015 x x 9 57 37 16 6
MIL-C-26482 x x x 10 70 45 19 7
I MIL-C-28840 x x 15 96 41 15
MIL-C-38999 x x 20 70 26
MIL-C-8151 1 x 25 106 39
MI L-C-83723 x 30 54
35 72
Power MI L-C-3767 x x 40 92
w
MIL-C-22992 x x
I
Coaxial MI L-C-3607 x AT = 0.989 (i)l ’85 22 Gauge Contacts

MIL-C-3643 x AT = 0.640 (i)’ “85 20 Gauge Contacts
MIL-C-3650 x AT = 16 Gauge Contacts
0.274 (i)’ ’85
MI L-C-3655 x
MIL-C-25516 x AT = 0.100 (i)l “85 12 Gauge Contacts
MIL-C-39012 x
MI L-C-55235 AT = Insert Temperature Rise
MIL-C-55339 x : i = Amperes per Contact
Triiial MIL-C-49142 x x
Insert RF Coaxial Connectors AT= 5°C
Material Temperature
Type Common Insert Materials Ran~e (“C)* RF Coaxial Connectors
A Vitreous Glass, Alumina -55 to 250 (High Power Applications) AT = 50”C
Ceramic, Polyimide
B Diallylphtalate, Melamine, -55 to 200
Fluorosilicione, Silicone
Rubber, Polysulfone,
Epoxy Resin Mating/Unmating Factor - KK
c Polytetrafluorethy lene -55 to 125 Mating/Unmating Cycles*
(Teflon), (per 1000 hours) nK
Chbrotrifluorethylene
(Kel-f)
D Polyamide (Nylon), -55 to 125 o to .05 1.0
Polychloroprene > .05 to .5 1.5
~ne >.5t05 2.0
>5t050 3.0
> 50 4.0
These temperature ranges indicate maximum
=pability of the insert material only. Connectors
Jsing these materials generally have a reduced ●One cycle includes both connect and disconnect.
emperature range caused by other considerations of
:onnector design. Applicable connector
specifications contain connector operating
emperature range,

—
I
I
MIL-HDBK-217F
15.1 CONNECTORS, GENERAL (EXCEPT PRINTED CIRCUIT BOARD)

I
I
Active Pins Factor - n Environment Factor - XE

Number of Number of ~E
Active Active
Xp
Cent acts Contacts Environment MIL-SPEC Lower Quality
GB 1.0 2.0
1.0 65 13
; 1.4 70 15 GF 1.0 5.0.
3 1.6 75 16
4 1.7 80 18 % 8.0 21
5 85
6 ;:: 90 E Ns 5.0 10
95 23
: ::: 100 25 Nu 13 27
9 2.4 105 27
*IC 3.0 12
10 2.6 110 30
11 2.7 115 32 5.0 18
12 2.9 120 35 %
13 3.0 125 37 8.0 17
14 3.1
%c
130 40
15 3.3 135 43 ‘UF 12 25
16 3.4 140 46
17 3.6 145 50 ‘RW 19 37
18 3.7 150 53
19 3.9 155 57 SF .50 .80
20 4.0 160 61
MF 10 20
25 4.8 165 65
30 5.6 170 69 ML 27 54
35 6.5 175 74
40 7.4 180 78 CL 490 970
45 8.4 185 83
50 9.5 190 89
55 11 195 94
60 12. 200 100
q = 0.51064
N = Number of Active Contacts
An active contact is the conductive element in a

oonnector which mates with another element for
the purpose of transferring electrical energy. For
ooaxial and triaxial oonneotors, the shield
contact k oounted as an active contact.
15-3

1 I
MIL-HDBK-217F
15.2 CONNECTORS, PRINTED CIRCUIT BOARD
MIL-C-21097 One-Piece Connector
MIL-C-55302 Two-Piece Connector
Failures/l 06 t-iours
Base Faiture Rate - L Connector Ter mrature Ri: ! (AT ‘C) Determination
Amperes c tntad Guac I
To (“C) To (<) Ab
Per Contact 26 22 20
o .00012 110 .0018 1 2 1 1

10 .00017 120 .0022 2 8 4 2
20 .00022 130 .0028 3 16 8 5
30 .00028 140 .0035 4 27 13 8
40 .00037 150 .0044 5 41 19 13
50 .00047 160 .0055
60 .00059 170 .0069
70 .00075 180 .0088
80 .00093 190 .011 AT = 2.100 (i)’.85 26 Guage Contacts
90 .0012 200 .015 AT = 0.989 (i)l .85 22 Guage Contacts
100 .0015
AT = 0.640 (i)’-85 20 Guage Contacts
AT = Contact Temperature Rise
i = Amperes per Contact

I
To = Internal Contact Operating Temperature (°C)
Mating/Unmating Factor - XK
l’vlating/Unmating Cycles*
(Perl 000 Hours)
o to .05 1.0
> .05 to .5 1.5
>.5t05 2.0
>5t050 3.0
>50 4.0
● A cycle is defined as the mating and unrnating

of a connector.
15-4

I
MIL-HDBK-217F
15.2 CONNECTORS, PRINTED CIRCUIT BOARD
Active Pins Factor - z Environment Factor - ~

Number of Number of ~E
Active Active
Contacts *P Contacts Environment MIL-SPEC Lower C?ualit~
GB 1.0 2.0
1 1.0 13
2 1.4 % 15 GF 3.0 7.0
3 1.6 75 16
4 1.7 80 18 GM 8.0 17
5 1.9 19
6 2.0 E Ns 5.0 10
7 :;
8 ::: 196 25 Nu 13 26
9 2.4 105 27
10 2.6 110 Alc 6.0 14
30
11 2.7 115 32 11 22
12 2.9 120 35
13 125 37 6.0 14
14 H 130 40
*UC
15 3.3 135 43 *UF 11 22
16 3.4 140 46
17 3.6 145 50 ‘RW 19 37
18 3.7 150 53
19 155 57 SF .50 .80
20 ::: 160 61
MF 10 20
25 4.8 165 65
30 5.6 170 69 ML 27 54
35 6.5 175 74
40 7.4 180 78 c, 490 970
45 185
50 !; 190 :;
55 11 195 94
60 12 200 100
N-1 q
np = exp
()
~
c1 = 0.51064
N = Number of Active Pins
An active contact is the conductive element

which mates with another element for the
purpose of transferring electrical energy.
15-5

MIL-HDBK-217F
MIL-S-83734 IC Sockets, Plug-in
Failuresll 06 Hours
‘P = %ZPXE
Base Failure Rate - ~ Environment Factor - XE

r
Type ?b~ Environment ~E
I I
GB 1.0
All MIL-S-83734 .00042
GF 3.0
GM 14
Active Pins Factor - np INS 6.0
Number of Active contacts 7tp
Nu 18
6 2.0 Alc 8.0

8 2.3 12
10 2.6 ‘IF
14 3.1 11
*UC
16 3.4
18 3.7 13
*UF
20 4.0 25
22 4.3 ‘RW
24 4.6 SE .50
28 5.3
36 6.7 MF 14
40 7.4 ML 36
48 9.1
50
64
9.5
13 I CL 650
N-1 q
np = exp ~
()
q = 0.51064
N = Number of Active Contacts
An active contact is the conductive element

which mates with another element for the
purpose of transferring electrical energy.
15-6

-. --- --- .- .
MIL-HDBK-217F
16.1 INTERCONNECTION ASSEMBLIES WITH PLATED THROUGH HOLES
DESCRIPTION
Circuit Boards, Printed (PCBS) and Discrete Wiring
Ap = Lb N1 xc + N2 (ZC + 13)] ~Q~E Failures/106 Hours

[
APPLICATION NOTE: For assemblies not using Plated Through Holes (PTH), use Section 17,
Connections. A discrete wiring assembly with electrokms deposit plated through holes is basically a pattern of
insulated wires laid down on an adhesive coated substrate. The primary cause of failure for both printed wiri~
and discrete wiring assemblies is associated with plated through kle pr6blems (e.g., barrel cracki~).
Base Failure Rate - ~ Qud@ ~actor - fiQ
Technology i~bl Quality nQ
Printed Wiring Assembly/Printed
II
.000041 MIL-SPEC or Comparable Institute for 1
Circuit Boards with PTHs Interconnecting, and Packaging
Electronic Circuits (lPC) Standards
Discrete Wiring with Electroless
Deposited PTH (s 2 Levels of Circuitry)
II .00026
Lower 2
Number of PTHs Factor - N, ard N- &
Factor Quantit~ Environment Factor - nE
I Environment I 7CC
N, Quantity of Wave Soldered Functional
PTHs GB 1.0
GF 2.0
N2
I
Quantity of Hand Soldered PTHs
I GM 7.0
Complexity Factor - Zn Ns 5.0

Number of Circuit Planes, P Nu 13
52
AC 5.0
3 1.3
4 1.6 ‘IF 8.0
5 1.8
6 2.0 ‘Uc 16
7 2.2 28
8 2.4 *UF
9 2.6 ‘RW 19
10 2.8
11 SF .50
2.9
12 3.1 MF 10
13 3.3
14 3.4 ML 27
15 3.6
c, 500
16 3.7
Discrete Wiring w/PTf-i 1
Xc = .65 P.m 2sPs16

MIL-HDBK-217F
17.1 CONNECTIONS
DESCRIPTION
Connections Used on All Assemblies Except Those
Using Plated Through Holes (PTH)
APPLICATION NOTE: The failure rate model in this section applies to connections used on all assemblies
except those using plated through holes. Use the Interconnection Assembly Model in Section 16 to account
for connections to a circuit board using plated through hole technology. The failure rate of the structure which
supports the connections and parts, e.g., non-plated-through hole boards and terminal straps, is considered to
be zero. Solderless wrap connections are characterized by solid wire wrapped under tension around a post,
whereas hand soldering with wrapping does not depend on a tension induced connection. The followiW
model is for a single co~nection. -- -
~ = ~ZQZE Failures/l 06 Hours
Base FaiJure Rate - L u

Environment Factor - ZF
!
Connection Type Environment fiE
Hand Solder, w/o Wrapping * GB 1.0

Hand Solder, w/Wrapping .00014
.00026 GF 2.0
Crimp
Weld .00005 GM 7.0
Solderless Wrap .0000035
Clip Termination .00012 N~ 4.0
Reflow Solder .000069
Nu 11
Quaiiiy Factor - XO 4.0
*IC
Quality Grade ~Q C;mments
6.0
‘IF
Crimp Types
‘Uc 6.0
Automated 1,0 Daily pull tests 8.0
recommended. ‘UF
%w 16
Manual ●
sF .50
Upper 1.0 Only MIL-SPEC or MF 9.0
equivalent tools and
terminals, pull test at ML 24
beginning and end of each
shift, color coded tools and CL 420
—
terminations.
Standard 2.0 MIL-SPEC tools, pull test at

beginning of each shift.
Lower 20.0 Anything less than standard

criteria.
411Types 1.0
~xcept Crimp
17-1

,,
MIL-HDBK-217F
18.1 METERS, PANEL
MIL-M-103O4 Meter, Electrical Indicating, Panel Type, Ruggedized
Failures/l 06 Hours
‘P = %nAzFnQzE
Base Failure Rate - ~ QuaI”@ Factor - ~

Type Quality nQ
I
All .090 M IL-M-1 0304 1.0
Lower 3.4
Application Factor - ~A
Application I Environment Factor - XF
Direct Current 1.0 Environment ~E
GB 1.0
Alternating Current 1.7
GF 4.0
%! 25
Ns 12
Function Factor - ~F
Function Nu 35
1 ~F
Alc 28
Ammeter 1.0 42
‘IF
Voltmeter 1.0 58
‘Uc
I
Other* I 2.8 ‘UF 73
‘RW 60
● Meters whose basic meter movement SF 1,1

construction is an ammeter with associated
MF 60
conversion elements.
ML NIA
CL N/A
18-1
I
MIL-HDBK-217F
19.1 QUARTZ CRYSTALS
MIL-C-3098 Crystal Units, Quartz
Lp = AbXQnE Failures/l 06 Hours
Base Failure Rate - ~ Environment Factor - xc

L
Frequency, f(MHz) I Lk u Environment ~E
G~ 1.0
0.5 .011
I 1.0 .013 GF 3.0
5.0 .019
10 .022 GM 10
15 .024
20 NS 6.0
.026
25 .027 NU 16
30 .028
35 .029 12
Aic
40 .030
45 .031 ‘iF 17
50 .032
‘Uc 22
55 .033
60 .033 ‘UF 28
65 .034
70 .035 %w 23
75 .035 SF .50
80 .036
85 .036 MF 13
90 .037
95 ML 32
.037
100 .037 CL 500
105 .038
Ab = .o13(f).23
Quality Factor - xfi

u
Quality fiQ
MIL-SPEC 1.0
Lower 2.1
19-1
—__—_——_——__
—_____ —_—__
___
MIL-HDBK-217F
20.1 LAMPS
MIL-L-6363 Lamps, Incandescent, Aviation Sewice
W-L-1 11 Lamps, Incandescent, Miniature, Tungsten-Filament
kp = ~~u~A~E Failures/l 06 Hours
APPLICATION NOTE: The data used to develop this model included randomly occurring catastrophic
failures and failures due to tungsten filament wearout.
Base FaiUre Rate - ~ Environment Factor - m~

.
Rated Voltage, Vr (Votts) Ab Environment %E
GB 1.0
5 .59
6 .75 GF 2.0
12 1.8
14 2.2 GM 3.0
24 4.5
NS 3.0
28 5.4
37.5 7.9 Nu 4.0
I *IC 4.0
Ab = .074(vr)’ “29 ‘IF 4.0
‘Uc 5.0
‘UF 6.0
Util@ion Factor- nu 5.0
*RW
Utilization (Illuminate Hour#
SF .70
Equipment Operate Hours)
MF 4.0
< 0.10 0.10 ML 6.0
0.10 to 0.90 0.72 cL 27
> 0.90 1.0
Application Factor - ~A
Application
Alternating Current 1.0
Direct Current 3.3
20-1
. a.. I 1 11 I
MIL-HDBK-217+
21.1 ELECTRONIC FILTERS, NON-TUNABLE
MlL-F-l 5733 Filters, Radio Frequency Interference
MIL-F-18327 Fitters, High Pass, Low Pass, Band Pass, Band
Suppression, and Dual Functioning (Non-tunable)
The most accurate way to estimate the failure rate for electronic fitters is to sum the failure rates tor the individual
compments which make up the filter (e.g., IC’s, diodes, resistors, etc.) using the appropriate models provided
in this Handbook. The Parts Stress models or the Parts Count method given in Appendix A can be used to
determine individual component failure rates. If insufficient information is available then the following defautt
model can be used.
Failures/l 06 Hours
~=%~xE
Base Failure Rate - ~ Environment Factor - ZE

—
Type Ab Environment ~E
GB 1.0
MlL-F-l 5733, Ceramic-Ferrite .022
Construction (Styles FL 10-16, 22, GF 2.0
24, 30-32, 34, 35, 38, 41-43, 45,
47-50, 61-65, 70, 81-93, 95, 96) GM 6.0
NS 4.0
MlL-F-l 5733, Discrete LC .12
Components, (Styles FL 37, 53, 74) NU 9.0
MlL-F-l 8327, Discrete LC .12 *IC 7.0

Components (Composltlon 1)
‘IF 9.0
M IL-F-18327, Discrete LC and .27 11
‘Uc
Cfystai Components
(Composition 2) *UF 13
‘RW 11
SF .80
MF 7.0
Quality Factor - ~ ML 15
I Quality
1 CL 120
MiL-SPEC 1.0
I Lower
I
2.9
21-1

l\ I I — ----
MIL-HDBK-217F
22.1 FUSES
W-F-1726 Fuse, Caftridge Class H
W-F-1814 Fuse, CaMdge, High Interrupting Capacity
MIL-F-5372 Fuse, Current Limiter Type, Aircraft
ML-F-23419 Fuse, Instrument Type
MIL-F-15160 Fuse, Instrument, Power and Telephone
(Nonindicating), Style FO1
+) “ %‘E‘ai1ure@106‘Wrs
APPLICATION NOTE: The reliability modeling of fuses presents a unique problem. Unlike most other
components, there is very little correlation between the number of fuse replacements and actual fuse failures.
Generally when a fuse opens, or “blows, - something else in the circuit has created an overload condition and
the fuse is sknply functbning as designed. This model is based on life test data and represents fuse open and
shorting failure modes due primarily to mechanical fatigue and corrosion. A short faiture mode is most cornmonty
caused by electrically conductive material shorting the fuse terminals together causing a failure to open
condition when rated current is exceeded.
Base Failure Rate - & Environment Factor - TCF

Type Environment ~E
1.0
W-F-1726, W-F-1814, MIL-F- .010 %
5372, MIL-F-23419, ML-F-151 60 GF 2.0
% 8.0
NS 5.0
Nu 11
AC 9.0
‘IF 12
15
‘Uc
18
*UF
*RW 16
SF .90
MF 10
ML 21
CL 230
J
22-1
I
I
I
MIL-HDBK-217F
I
I
23.1 MISCELLANEOUS PARTS
L - Failure Rates for Miscellaneous Parts (Failure@ 106 Hours)

Failure Rate
Vibrators (M IL-V-95)
60-cycle 15
120-cycle 20
400-cycle 40
Lamps
Neon Lamps 0.20
Fiber Optic Cables (Single Fiber Types Only) 0.1 (Per Fiber Km)
Single Fiber Optic Connectors* 0.10
Microwave Elements (Coaxial & Waveguide)

Attenuators (Fixed & Variable) See Resistors, Type RD
Fixed Elements (Directional Couplers, Fixed Stubs & Cavities) Negligible
Variable Elements (Tuned Stubs & Cavities) 0.10
Microwave Ferrite Devices

Isolators & Circulators (S100W) 0.10x z~
Isolators & Circulators (>100W) 0.20 x ~E
Phase Shifter (Latching) O.10x?tE
Dummy Loads
< 1 Oow 0.010 x ~E
1Oow to < 1Ooow 0.030 x n~
> 1000W 0.10 x ZE
Terminations (Thin or Thick Film Loads Used in Stripline and Thin 0.030 x fiE
Film Ckcults)
Caution: Excessive Mating-Demating Cycles May Seriously Degrade Reliability
23-1
I
MIL-HDBK-217F
—
23.1 MISCELLANEOUS PARTS
Environment Factor - X-
k
,.. .V. V..- -v . W.O, .V -w..-”” (Durnmy Load I
Environment ~E Environment
GB 1.0 GB 1.0
GF 2.0 GF 2.0
GM 8.0 GM 10
NS 5.0 N~ 5.0
Nu 12 N“ 17
*IC 5.0 AC 6.0
‘IF 8.0 ‘IF 8.0
‘Uc 7.0 *UC 14
‘UF
11
‘UF 22
‘RW
17
*RW 25
SF .50 SF .50
MF 9.0 MF 14
ML 24 ML 36
CL 450 I c, 660
{
23-2
a
MIL-tiDBK-217F
APPENDIX A: PARTS COUNT RELIABILITY PREDICTtON
Parts Ccxmt Rellablllty Prediction - This prediction method is applicable during bid proposal
and early design phases when insuff-kient information is avaitable to use the part stress analysis models
shown in the rndn body of this Handbook. The information needed to apptythe method is (1) generk pal
ws (includlng complexity for mkrodrcults) and quantities, (2) part quallty levels, and (3) equipment
environment. The equipment failure rate Is obtained by looking up a generic failure rate in one of the
following tables, muttiptying it by a qualityfactor,and then summing it with failure rates obtained for other
components in the equipment. The general mathematkal expressbn for equipment failure rate with this
method is:
Equation 1
for a given equipment environment where:
‘EQUIP - Total equipment failure rate (Failure@l 06 Hours)
= Generic failure rate for the i ‘h generk part (Failures/106 Hours)

‘9
7LQ = Quality factor for the i ‘h generic part
Ni = Quantityof i ‘h generk part
n = Number of different generk part categories in the equipment
Equation 1 applies if the entire equipment is being used in one environment. If the equipment
comprises several units operating in different environments (such as avionics systems with units in
airborne inhabited (Al) and uninhabited (Au) environments), then Equation 1 should be applied to the
portions of the equipment In each environment. These “environment-equipment” failure rates should be
added to determine total equipment failure rate. Environmental symbols are defined in SeCtion 3.
The quality factors to be used with each part type are shown with the appkabk ~ tables and are not
necessarily the same values that are used in the Parl Stress Anatysis. Microcircuits have an additional
multiplying factor, ~L, which accounts for the maturfty of the manufacturing process. For devices in
production two years or more, no rrmdiiition is needed. For those kI production less than two years, ~
should be ndtiplied by the appropriate XL factor (see page A-4).
ft should be noted that no generic failure rates are shown for hybrid mkrocimdts. Each hybdd is a fakfy
unique devke. Since none of these devkes have been standardized, their complexity cannot be
determined from their name or function. Identically or similarly named hybrids can have a wide range of
complexity that thwarts categorization for pufposes of this prediction method. tf hybrids are anticipated for
a design, their use and construction should be thoroughly investigated on an individual basis with
application of the predktbn model in Section 5.
The failure rates shown In this Appendix wem calculated by assigning model defautt values to the
failure rate modets of Section !5through 23. The speclfk defaultvaJues used for the model parameters are
shown with the ~ Tabtes for mkrocimults. Default parameters for atiother part cfasses are summarized in
the tables startifi on Page A-12. For parts with characterfstks which differ significantly from the assumed
defaults, or parls used in large quantities, the underlying models in the main body of this Handbook can
be used.
A-1

I
MIL-HDBK-217F
APPENDIX A: PARTS COUNT
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MIL-HDBK-217F
APPENDIX B: VHSJC/VHSIGLIKE AND VLSI CMOS (DETAILED MODEL)
This appendix contains the detaibd versbn of the VHSICMSI CMOS model contained in Sectbn 5.3. It
is provided to albw more detailed device level design trade-offs to be acxmmplkhed for predominate
failure modes and mechanisms exhibited in CMOS devices. Reference 30 should be consulted for a
detailed derivation of this model.
CN~ RATUSWL
Lp(t) ~,(t) + ~t) + ~(t) + ~~(t) + ~.~ + ~~ + ~~(t)
Ip(t) Pred.kted Failure Rate as a Function of Time
Aox(t) Oxide Failure Rate
q-Jt) Metallization Failure Rate
kc(t) Hot Carner Failure Rate
~~~(t) Contamination Failure Rate
k PAC Package Failure Rate
% SD EOS/ESD Failure Rate
q~(t) Miscellaneous Failure Rate
The equations for each of the above failure mechanism failure rates are as follows:
A %YPEO)( -7.7 to) (+ox) (e -7.7 AToxt

Lox (in F/l 06) = * (.0788 e )
AR ~ OR )[
.399 5 2
exp ~ In (t + to) - In t500x
+ (t+to)a~x (( ) )1
=Ox
A = Total Chip Area (in cr#)
‘TYPEOX = .~ for Custom and Logic Devices, 1.23 for Memories and Gate Anays

MIL-HDBK-217F
APPENDIX B: VHSIC-VHSIC-LIKE AND VLSI CMOS (DETAILED MODEL)
AR .21 cm2
2
%
Doox Oxide Defect Density (tf unknown, use — where X. = 2 w and X~ is the feature
()%
size of the device)
DR 1 Def ect/cm2
to Effective Screening Time
(Actual Time of Test (in 106 hrs.)) ● (ATOX (at Junction s~eenjm tern.) (in ~))”
‘Tox
Temperature Acceleration Factor, = exp ‘3 - (+ - *)]
[ 8.6 I7x1O 5
(where TJ = Tc + 9JCP (in “K))
1
-192 (~ - *)
%(-JX e
Eox Maimm power &Jppiy Votbge VDD, divided by the gate oxide thickness (in
MV/cm)
1.3x1022 (QML)
t500x (in 106 hrs.)
ATOX ‘Vex
(QML) = 2 if on CNL, .5 if not.
~ox Sgma obtained fmm test data of oxide faibres fmm the same or similar process. If
not avaiiable, use a Oox value of 1.
t time (in 106 Hours)
B-2

—
4
MIL-HDBK-217F
APPENDIX B: VHSIC/VHSIGLIKE AND VLSI CMOS (DETAILED MODEL)
F FQw
1
A %YPEMET ‘OMET ~ 00102 ~-1 “’8 ‘O)(A
& =
AR ,~E~‘(e-’.’8‘TME+ )
[ ‘R -
+[(,+;fl=e.P[~(
l.(t+to)-,.t50METfJ
= Total Chip Area (in cm 5
= .88 for Custom and Logic Devices, 1.12 for Memory and Gate Arrays
= .21 cm2
‘R
2
Xo
= Metal Defect Density (tf unknown use (—) where ~ = 2 pm and X~ is the feature size of
‘OMET x~
the device)
= 1 Defect/cm*
‘R
= Temperature Acceleration Factor
= exp
[ 8.6;yj0-5 (~ - A)] (TJ =TCASE +,JcP (inOK)~
= Effective Screening Time (in 106 hrs.)

‘o
=A ‘= (at Screening Ternp (in ‘K)) ● (Actual Scmenhg Tune (in 106 hrs))
.388 ● (Metal Type)

t = (QML) (in 106 hrs.)
50MET
J2 A
TME’
(QML) = 2 if on QML, .5 if not.
Metal Type = 1 for Al, 37.5 for AI-CU or for A1-Si-Cu
J u The mean absoMe value of Metal Current Density (in 106 Amps/cm2)
a = slgrna otXained from test data on electmnigration failures from the same or a similar
WT
process. If this data is not available use cm = 1.
t = time (in 106 hrs.)
B-3

MIL-HDBK-217F
APPENDIX B: VHSIGVHSIGUKE AND VLSI CMOS (DETAILED MODEL) —
)1
-.5
In (t + to) - In t50
2 HC
%c (
= (QML)3.74XI 0-5 $u Q -2.5

‘50HC Id
‘THC ‘d ()
(QML) = 2 if on QML, .5 if not
.039
% tic = exp
[ 8.617x10-5
Id Drain Current at Operating Temperature. If unknown use id = 3.5 e ‘“00’57‘J ‘in ‘K) (WV
‘sub Substrate Current at Operating Temperature. If unknown use
Isub = .0058 e ‘-OOWg ‘J (in ‘K) (mA)
% sgma derived from test data, if not available use 1.
to ATW (at wreening Temp. (in ‘K)) ● (Test Duration in 106 hours)
t time (in 106 hrs.)
ATIC)N F~~TlOf!l
--0028 to AT~N e -.0028 ATCON t

%hl .000022 e
-,0- [+ -4$1
exp (where TJ = Tc + 8JCP (in ‘K))
[ 8.617x1O 5
to Effective Screening Time
ATmn (at screening junotion temperature (in ‘K)) ● (actual screening time in 106 hrs.)
t time (in 106 hrs.)
B-4

MIL-t-iDBK-217F
APPENDIX B: VHSIC/VHSIGLIKE AND VLSI CMOS (DETAILED MODEL)
%AC = (.0024 + l.= x 10-5 (spins)) ~ ~ ~T + ~~
fiE = See Section 5.10
7CQ = See Sectbn 5.10
Package Type npT
DtP 1.0
Pin Grid May 2.2
Chip Carner (Surface MOUM T=hno~y) 4.7
‘PH Package Hermetidty Factor
% O for Hermetic Packages
399 -.5
‘PH -
t~~”
exp
[(~PH2
I
In(t) - In(tsop”))g for plastc packages
2.96
%0
Pt+
86x 10-6 exp ‘2 - (;
[ 8.617x1O 5
- *)] exp ~
[1
TA ArWent Temp. (in “K)
-+1+
(mL’230[+ (l-DC)(RIi) whereTJ= Tc + eKp On“K)
(for example, for 50% Relative Humidity, use RH = .50)
.74
time (in 106 hrs.)
B-5

MIL-HDBK-217F
APPENDIX B: VHSIGVHSIGLIKE AND VLSI CMOS (DETAILED MODEL)
-.0002 VTH
%0s = “““ - “OOo:;&-
VTH = ESD Threshold of the device using a 100 pF, 1500 ohm discharge model
‘2.2 ~) ~ATMl~ ) (e -2.2 ATMIS t,

‘MIS = (.01 e
= Temperature Acceleration Factor

‘TMIS
-.423
= exp
(+ - A)]
[ 8.6317x10-5
where TJ = Tc + eJcP (in ‘K)
to = Effective Screening Time
= ATMl~ (at Screening Terrp (in “K)) ● Actual Screening Time (in 106 hours)
t= time (in 106 hrs.)
B-6

I 7 -an 1 AC
MIL-HDBK-217F
APPENDIX C: BIBLIOGRAPHY
Publications tisted with “AD” nunbers may be obtained trom:
National Technical hlfOtiiOfl Service

5285 Port Royal Road
~@eM, VA 22151
(703) 487-4650
U.S. Defense Contractors may obtain copies from:
Defense Technical Information Center

Cameron Station - FDA, Bldg. 5
Alexandria, VA 22304-6145
(703) 274-7633
Documents with AD number prefix with the letter “B” or with the suffix “L”: These documents are in a
“Limfted Distributbn” category. Contact the Defense Technical Information Center for_
procedures.
Copies of MIL-STDS’S, MIL-HDBK’s, and specifications are available from:
Standardization Document Order Desk

700 Robins Ave.
Buikfing 4, Section D
Philadelphia, PA 19111-5094
(215) 697-2667
The year of publiition of the Rome Laboratory (RL) (formerly Rome Air Development Center (RADC))
documents is part of the RADC (or FL) nunber, e.g., RADGTR-66-97 was published in 1968.
1. “Laser Reliability Prediction,” RADC-TR-75-21 O, AD A016437.
2. “ReliabiMy Model for Miniature Blower Motors Per MIL-B-23071 B,” RADC-TR-75-178, AD A013735.
3. ‘High Power Microwave Tube Reliability Study,” FAA-RD-76-I 72, AD AO033612.
4. “Electric Motor Reliabii~ Model,” RADC-TR-77406, AD A0501 79.
5. “Development of Nonelectronic Part Cyclic Failure Rates,”RADC-TR-77417, AD A050678.
This study devebped new faiture rate models for relays, switches, and connectors.
6. “Passive Device Failure Rate Models for MIL-HDBK-217B,” RADC-TR-~432, AD A050180.
This study developed new failure rate models for resistors, capacitors and inductive devices.
7. “Quantification of Printed Circuit Boatd Connector ReWMtty,” RADC-TR-77-433, AD A049980.
8. “Crimp Connection Reliability,” RADC-TR-78-15, AD A050505.
9. “LS1/Micmprocessor Reliabilii Prediction Model Development,” RADC-TR-79-97, AD A06891 1.
10. “A Re@nda~ Notebook,” RADC-TR-77-287, AD A050837.
11, “Revision of Environmental Faofors for MIL-HDBK-217B,” RADC-TR-80-299, AD A091837.
L-1

.—
MIL-HDBK-217F
12. Traveling Wave Tube Failure Rates,- RADC-TR-80-288, AD A096055.
13. “Reliability Predict&n Modeling of blew Devices, - RADC-TR~237, AD A090029.
This study devebped failure rate nmdek for magnetic bubble memories and charge~upkf
mernortes.
14. “Failure Rates for Fiber Optic Assemblies,” RADC-TR-80-322, AD A092315.
15. “Printed Wiring Assembly and Interconnection ReliabMfy,” RADC-TR-81 -318, AD Al 11214.
This study dwebped faihn fate modets for printed wtrfng asae~s, solderless wrap
assanbfies, wrapped and soldered assemblies and discrete wirfng assemblies with
ebctroless depostted plated through holes.
16. “Avionio Etimentat F_ for MIL-HOBK-21 7,” RADC-TR-81 -374, AD B084430L.
17. “RADC Thermal Guide for Reliability Engineers,” RADC-TR-82-1 72, AD Al 18839.
18. “Reliability Modeling of Critical Electronic Devices,” RADC-TR-83-1 08, AD Al 35705.
This report devebped failure rate prediction procedures for magnetrons, vidicions, cathode
ray tubes, semiconductor lasers, helium-cadtim lasers, heiiim-neon lasers, Nd: YAG lasers,
electronic filters, sofid state relays, time delay relays (electronic hybrid), circuit breakers, I.C.
Sockets, thumbwheel switches, electromagnetic meters, fuses, crystals, incandescent lamps,
neon gbw lamps and surface acoustic wave devices.
19.
This study developed failure rate models for nonoperating periods.
20. “RADC Nonelectronic Reliability Notebook,” RADC-TR-85-194, AD A163900.
This report contains failure rate data on rnechanicaf and electromechanical parts.
21. “Reliabilii Prediction for Spacecraft,” RADC-TR-85-229, AD A149551.
TMs study kwestigated the reliability performance h@ories of 300 Satellite vehicles and is the
basis for the halving of all model %E factors forMIL-HDBK-217E to MIL-HDKB-21 7E, Notice 1.
22. “Surface Mount Technology: A Reliability Review; 1986, Available from Reliabilii Anatysis Center,
PO BOX 4700, Rome, NY 13440-8200, 800-526-4802.
23. ‘Thermal Resktames of Joint Army Navy (JAN) Certified Microcimuif Pa&ages,” RADC-TR46-97,
AD B1084I7.
24. “Large Scale Memory Emr Detection and Correction? RADC-TR-87-92, AD B1 17785L.
This study developed models to cakwlate memory system reliiility for memories
incorporating error detecting and correcting codes. For a summary of the study see 1989
IEEE ReliabiMy and Maintainability SymposUm Proceedings, page 197, “Accounting for Soft
Errors in Memory Reliability Prediiion.a
25. “Reliability Analysis of a Surface Mounted Package Using Finite Element Simulation,” RADC-TR-87-
177, AD A189488.
c-2
MIL-HDBK-217F
26. “VHSIC Impact on System Reliability,” RADC-TR-86-13, AD B122629.
27. “Reliability Assessment of Surface Mount Technology,” RADC-TR-68-72, AD A193759.
28. “Reliability Prediction Models for Discrete Semiconductor Devices, - RADC-TR-88-97, AD A200529.
This study developed new failure rate prediction modets for GaAs Power FETS, Transient
Suppressor Diodes, Infrared LEDs, Diode Array Displays and Current Regulator D-.
29. “Inqxmt of Fiber Optics on System Reliability and Maintainabilii,” RADC-TR-88-124, AD A2CH946.
30. “VHSWVHSIC Like Rel&bi14y Prediotlon Modeling,” RADGTR-69-I 71, AD A214601.
This study provides the basis for the VHSIC model appearing in MIL-HDBK-21 7F, Section 5.
31. “Reliability Assessment Using Finite Element Techniies,m RADC-TR-89-281, AD A21 6907.
This study addresses surface mounted solder interconnections and miorowire board’s plated-
thru-hole (PTH) connections. The report gives a detailed account of the factors to be
considered when performing an FEA and the procedure used to transfer the results to a
reliability figure-of-merit.
32. “Reliability Analysis/Assessment of Advanced Technologies,” RADC-TR-90-72, ADA 223647,
This study provides the basis for the revisedmicmchwit models (except VHSIC and Bubble
Memories) appearing in MIL-HDBK-217F, Sectii 5.
33. “Improved Reliability Prediction Model for Field-Access Magnetic Bubble Devices,” AFWAL-TR-81-
1052,
34. “Reliability/Desgn Thermal Applications,” MIL-HDBK-251.
35. “NASA Parts Application Handbook,” MIL-HDBK-976-B (NASA).

This handmok is a five vohnne series which dfscusses a full range of eiectrfcal, electronic and
electromechanical component parts. It provides extensive detailed technical informatbn for
each component part such as: definitions, oonstructbn details, operating characteristics,
derating, failure mechanisms, screening techniques, standard parts, environmental
considerations, and circuit appliition.
36. ‘Nonelectronic Parts Reliability Data 1991 ,“ NPRD-91.

TM report contains field ?aiture rate data on a variety of ektrical, mechanical,
electromechanical and microwave parts and assernblii (1 400 different part types). It is
available from the Re@bMty AnaJysis Center, PO Box 4700, Rome, NY 13440-6200, Phone:
(315) 337-0900.
Custodians: Preparing Activity:

Amy-CR Air Force -17
Navy - EC
Air Fome -17 Project No. RELI-0064
c-3
. ——
---- . .. .
I
MIL-HDBK-217F
Review AcWtWs:
Army - Ml, AV, ER
Navy - Sl+, AS, OS
~rForce -11, 13, 14, 15, 18,
19,99
User Activities:
Army - AT, ME, GL
Navy - CG, MC, YD, TD
Alr Force -85
c-4

Check the source to verify that this is the current version before use. .
aynott
ImE:Thistcumm Jeusod*=7wt*d norbrupostwdvus, ddatkm, udwikatkmofspedk=bn~sm
doaunsm,
Qmult cm- Camnoms sdlmbdanmsbfmtinat Oons$mw podtJnd
orhplyuthofizdcm mwdvearly thodsr9ncdcka8na
w8)wb
amsnd mnuactd nquhm9nts.
(Fo#dahg lt?ishe)
(FM abng this line)
DEPARTMENT OF THE AIR ~E NO POSTAGE

RUERSS
GrWfissAFB, NY 13441-5700 111111 NECESSARY
IF MAILED
OFFKXAL BUSINESS
FOR PRtVATE USE S300
t331ALTY
\ l~S =LY MAIL
n IN THE
UNITED STATES
FRSTCtASS W- tm. - w~m D.c.

Am~=
Rome laboratory
AlTN: RIJERSS
Griffiss AFB, NY 13441-5700

... . . , ..
STANDARDIZATION DOCUMENT IMPFtOVEhtENT PROPOSAL
(set?hstructbn - I?eveme Ski@
1.
ability PnWidon of Electronic E@pment
. — m m)
•1
D
c1 MAMJFAcnmE.R
Parag~ Nuntxw and Wording:
Wording
ReaaodRaIionab \or R~rnrnerKMon :
6. REMARKS
‘a
b Ss (s-a my,St-, ZP
PREVIOUS EDfTION IS OBSUETE

DD .% 1426


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DISTRIBUTION STATEMENT A: Approved for public release; distribution unlimited.

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RELIABILllY PREDICTION OF ELECTRONIC EQUIPMENT

1. This standardization handbook was developed by the Department of Deferw

3. Beneficial comments (recommendations, additions, deletions) and any pertinent

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SEHION 4: RELIABILIN ANALYSIS EVALUATION .....................*..*... ....................... 4-1

SECTION 5: MICROCIRCUJTS, INTRODUCTION .......**...**.....................0..... ................. ● 5-1

SECTION 6: DISCRETE SEMICONDUCTORS

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SECTION 10: CAPACITORS

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SECTION 11: INDUCTIVE DEVICES

SECTION 12: ROTATING DEVICES

I SECTION 14: SWITCHES

SECTION 15: CONNECTORS

SECTION 16: lNTERCONNECTtON ASSEMBLIES

SECTION 17: CONNECTIONS

SECTION 18: METERS

SECTION 19: QUARTZ CRYSTALS

SECTION 20: LAMPS

SECTION 21: ELECTRONIC FILTERS

SECTION 22: FUSES

SECTION 23: MISCELLANEOUS PARTS

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● Monolithic MOS Digital and Lmar Gate/Logic Amy Devfces

● Surface Acoustic Wave Devices

3. The reformatting of the entire handbook to make H easier to use.

4. A reduction in the number of environmental fado~ (~E) from 27 to 14.

5. A revised failure rate model for Network Resistors.

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1.3 Computerfzad Rellablllty PmcffctlOn - Rome Laborato~ - ORACLE is a computer program

2.0 REFE!?ENCE DOCUMENTS

~s~cites somespecificatbns which have beencanoslle dofwhiohdescrb ectevicesthatam

MIL-C-5 10.7 Ca@&s, FMed,Mii-Dieisctric, General Specifii for

MIL%l 1 9.1 ~, F&a composition (Insufated) General $pecuii for

MlL-R-l 9 9.11 Resiekx. Variab&gWirewound (Low Operating Tmpwatum) General

MIL-G20 10.11 @Pw@%=d~ ~“ v@fw=- ~)

MIL-R-22 9.12 Rask!or, Wuewow Power Type, General Spa&cation for

MIL-C-25 10.1 ~. fiti p~r~~~ Dire Cwrent (Hermetically Sealed

ML-(X2 10.15 ~r. Fiu~ ~fo~~ (DG fgruminum.W E~@,

MIL-G81 10.16 Capacitor, Variable, Ceramic Dielectric (Trimmer). General Specification

MIL-R-93 9.5 Resistor, Fwed, Wkewound (Aocura!e), General Spdfkdon for

MIL-R-94 9.14 Resistor, Variable, Composition, General Specifiin for

W-L-1 11 20.1 -. hadaant Miniature, Tungaran Fikment

W= 14.5 Ckauit Br@der, MOidOdC&m, BrarmflcfrcuRand~

w-f-i814 22.1 Fuse, Camidge, High Interrupting

MlL4N8so 15.1 Connector, Coaxial, Radio Frequency, Series LC

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. Mt4X655 15.1 conneotor, P&q and Ramptda, _(Jl=SeriasTwin)and

MIL-S-3786 14.3 S*. Rotary (Circxit Selector, Low-Current (Capady)), General

MfL-G3950 14.1 =. Toggle, Envlmnmantally sealed, General Speckatbn for

MIL-G3965 10.13 =b~~~ Elti~ (No-lkf Electrolyte), Tantalum, General

MIL+5015 15.1 ~, Eledrkal, Circular Threaded, AN Type, General

MIL-F-5372 22.1 I%aa, Currati Limiter Type, Amaft

MIL-R-6106 13.1 Relay, Electromagnetic (Including Established Reliability(ER) Typs),

MIL-L-6363 20.1 bnp, Incandemt, Aviation Service, General Raquirament for

SEHION 4: RELIABILIN ANALYSIS EVALUATION .......................... ....................... 4-1

SECTION 5: MICROCIRCUJTS, INTRODUCTION ...............................0..... ................. ● 5-1

ML+163 10.19 = ~~ ofi,v. V=xum MI- General Specifiibn