HGTG20N60C3D

Data Sheet December 2001

45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49179.

Features
45A, 600V, TC = 25oC 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode

Packaging
JEDEC STYLE TO-247
E C G

Ordering Information
PART NUMBER HGTG20N60C3D PACKAGE TO-247 BRAND G20N60C3D

NOTE: When ordering, use the entire part number.

Symbol
C

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767

2001 Fairchild Semiconductor Corporation

HGTG20N60C3D Rev. B

HGTG20N60C3D
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTG20N60C3D Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 45 20 300 20 30 20A at 600V 164 1.32 -55 to 150 260 4 10 W W/oC
oC oC

UNITS V A A A V V

600

s s

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 10.

Electrical Specifications
PARAMETER

TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 3.4 VCE = 480V VCE = 600V 120 20 TYP 1.4 1.5 4.8 8.4 91 122 28 24 151 55 500 500 MAX 250 5.0 1.8 1.9 6.3 250 110 145 32 28 210 98 550 700 UNITS V A mA V V V nA A A V nC nC ns ns ns ns J J

Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current

Collector to Emitter Saturation Voltage

VCE(SAT)

IC = IC110 VGE = 15V

Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA

VGE(TH) IGES SSOA

IC = 250A, VCE = VGE VGE = 20V TJ = 150oC, RG = 10, VGE = 15V, L = 100H

Gate to Emitter Plateau Voltage On-State Gate Charge

VGEP QG(ON)

ICE = IC110, VCE = 0.5 BVCES ICE = IC110 VCE = 0.5 BVCES VGE = 15V VGE = 20V

Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3)

td(ON)I trI td(OFF)I tfI EON EOFF

IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10 L = 1mH Test Circuit (Figure 19)

2001 Fairchild Semiconductor Corporation

HGTG20N60C3D Rev. B

HGTG20N60C3D
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF VEC trr IEC = 20A IEC = 20A, dIEC/dt = 200A/s IEC = 2A, dIEC/dt = 200A/s Thermal Resistance Junction To Case RJC IGBT Diode NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10 L = 1mH Test Circuit (Figure 19) MIN TYP 28 24 280 108 1.0 1.2 1.5 32 MAX 32 28 450 210 1.1 1.7 1.9 55 47 0.76 1.2 UNITS ns ns ns ns mJ mJ V ns ns
oC/W oC/W

Typical Performance Curves

50 ICE , DC COLLECTOR CURRENT (A)

Unless Otherwise Specified

ICE , COLLECTOR TO EMITTER CURRENT (A)

VGE = 15V

140 120 100 80 60 40 20 0 0

TJ = 150oC, RG = 10, VGE = 15V, L = 100H

40

30

20

10

0 25

50

75

100

125

150

TC , CASE TEMPERATURE (oC)

100 200 300 400 500 600 VCE , COLLECTOR TO EMITTER VOLTAGE (V)

700

FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

2001 Fairchild Semiconductor Corporation

HGTG20N60C3D Rev. B

HGTG20N60C3D Typical Performance Curves

fMAX , OPERATING FREQUENCY (kHz)

Unless Otherwise Specified (Continued)

tSC , SHORT CIRCUIT WITHSTAND TIME (s)

100 TC 75oC 75oC 110oC 110oC 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 0.76oC/W, SEE NOTES 1 2 5 10 VGE 15V 10V 15V 10V

VCE = 360V, RG = 10, TJ = 125oC ISC

12 10 8 6 4 2

400 350 300 250 200 150

tSC 10 11 12 13 14 15

20

40

ICE , COLLECTOR TO EMITTER CURRENT (A)

VGE , GATE TO EMITTER VOLTAGE (V)

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

ICE , COLLECTOR TO EMITTER CURRENT (A)

100

ICE, COLLECTOR TO EMITTER CURRENT (A)

DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250s

300 DUTY CYCLE <0.5%, VGE = 15V 250 200 150 TC = -55oC 100 50 0 TC = 150oC PULSE DURATION = 250s TC = 25oC

80 TC = -55oC 60 TC = 25oC oC TC = 150

40

20

10

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

VCE , COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE

FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

4.0 EON , TURN-ON ENERGY LOSS (mJ) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0

EOFF, TURN-OFF ENERGY LOSS (mJ)

RG = 10, L = 1mH, VCE = 480V

3.0 RG = 10, L = 1mH, VCE = 480V 2.5 2.0 TJ = 150oC; VGE = 10V OR 15V 1.5 1.0 0.5 0 TJ = 25oC; VGE = 10V OR 15V

TJ = 25oC, TJ = 150oC, VGE = 10V

TJ = 25oC, TJ = 150oC, VGE = 15V 5 10 15 20 30 35 25 ICE , COLLECTOR TO EMITTER CURRENT (A) 40

10 15 20 25 30 35 ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT

2001 Fairchild Semiconductor Corporation

HGTG20N60C3D Rev. B

ISC , PEAK SHORT CIRCUIT CURRENT (A) 6 40

TJ = 150oC, RG = 10, L = 1mH, V CE = 480V

14

450

HGTG20N60C3D Typical Performance Curves

50 tdI , TURN-ON DELAY TIME (ns) 45 trI , RISE TIME (ns) 40 TJ = 25oC, TJ = 150oC, VGE = 10V 35 30 25 TJ = 25oC, TJ = 150oC, VGE = 15V 20 5 10 15 20 25 30 35 40 RG = 10, L = 1mH, VCE = 480V

Unless Otherwise Specified (Continued)

200 RG = 10, L = 1mH, VCE = 480V 175 150 125 100 75 50 25 TJ = 25oC and TJ = 150oC, VGE = 15V 0 5 10 15 20 25 30 35 40 TJ = 25oC, TJ = 150oC, VGE = 10V

ICE , COLLECTOR TO EMITTER CURRENT (A)

ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT

300 td(OFF)I , TURN-OFF DELAY TIME (ns) 275

RG = 10, L = 1mH, VCE = 480V

120 RG = 10, L = 1mH, VCE = 480V 110 tfI , FALL TIME (ns) 100 90 80 70 60 50 40 5 10 15 20 25 30 35 40 TJ = 25oC, VGE = 10V OR 15V TJ = 150oC, VGE = 10V OR VGE = 15V

250 225 200 175 150 125 100 5 10 15 20 25 30 35 40 TJ = 150oC, VGE = 10V, VGE = 15V TJ = 25oC, VGE = 10V, VGE = 15V

ICE , COLLECTOR TO EMITTER CURRENT (A)

ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT

FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT

ICE , COLLECTOR TO EMITTER CURRENT (A)

300 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s 250 TC = -55oC 200 150 100 TC = 25oC 50 0 TC = 150oC

16 14 12 10 8 6 4 2 0 5 6 11 12 13 7 8 9 10 VGE , GATE TO EMITTER VOLTAGE (V) 14 15 0

IG (REF) = 1mA, RL = 15, TC = 25oC

VCE = 600V

VCE = 200V VCE = 400V

10

20

30

40

50

60

70

80

90

100

Qg, GATE CHARGE (nC)

FIGURE 13. TRANSFER CHARACTERISTIC

FIGURE 14. GATE CHARGE WAVEFORMS

2001 Fairchild Semiconductor Corporation

HGTG20N60C3D Rev. B

HGTG20N60C3D Typical Performance Curves

5 FREQUENCY = 1MHz CIES 4 C, CAPACITANCE (nF)

Unless Otherwise Specified (Continued)

COES

1 CRES 0 0 5 10 15 20 25

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE

ZJC , NORMALIZED THERMAL RESPONSE

100

0.5 0.2

10-1

0.1 0.05 0.02 0.01 SINGLE PULSE DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-4 10-3 10-2 10-1 100 PD t2 101 t1

10-2

10-3 -5 10

t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

100 IEC , FORWARD CURRENT (A) 90 tr , RECOVERY TIMES (ns) 80 70 60 50 40 30 20 10 0 0 0.5 1.0 1.5 TC = 150oC 2.0 2.5 3.0 TC = 25oC TC = -55oC

45 40 35 30 25 20 15 10 5 0

TC = 25oC, dIEC/dt = 200A/s

trr

ta tb

10

15

20

25

30

VEC , FORWARD VOLTAGE (V)

IEC , FORWARD CURRENT (A)

FIGURE 17. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP

FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT

2001 Fairchild Semiconductor Corporation

HGTG20N60C3D Rev. B

HGTG20N60C3D Test Circuit and Waveforms

HGTG20N60C3D 90% VGE EOFF L = 1mH RG = 10 + ICE VDD = 480V VCE 90% 10% td(OFF)I tfI trI td(ON)I 10% EON

FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT

FIGURE 20. SWITCHING TEST WAVEFORMS

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handlers body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBD LD26 or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.

Operating Frequency Information

Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 20. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (I CE = 0).

2001 Fairchild Semiconductor Corporation

HGTG20N60C3D Rev. B

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Rev. H4