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Samsung Foundry: Technology Innovation in Advanced Nodes

Samsung Foundry is investing in advanced technology nodes to meet the convergence of mobile multimedia and single platform applications. Key challenges in nodes below 20nm include lithography limitations and gate oxide scaling which Samsung is addressing through innovations like FinFET transistors, double patterning lithography, high-k metal gate dielectrics. FinFET provides benefits like lower leakage current and voltage thresholds over planar transistors, allowing for higher performance and lower power.

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54 views

Samsung Foundry: Technology Innovation in Advanced Nodes

Samsung Foundry is investing in advanced technology nodes to meet the convergence of mobile multimedia and single platform applications. Key challenges in nodes below 20nm include lithography limitations and gate oxide scaling which Samsung is addressing through innovations like FinFET transistors, double patterning lithography, high-k metal gate dielectrics. FinFET provides benefits like lower leakage current and voltage thresholds over planar transistors, allowing for higher performance and lower power.

Uploaded by

sckid
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
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Samsung Foundry

Technology Innovation in Advanced Nodes


Smart & Innovative Foundry Solution

Market/Technology Trends

Smart & Innovative Foundry Solution

Market Trends
Convergence for mobile multimedia applications

Mobility

Computing

Higher performance & lower power in a single platform


Performance (DMIPS) 10,000

Mobile Internet Devices

GHz / Multicore

Battery Life

5,000

Power

Power Gap

2008

2010

2012

Smart & Innovative Foundry Solution

2014

Time

Single platform benefit


One design infrastructure investment for wide range of applications
Desktop/ Server Graphic Netbook Printer Tablet DTV/STB

High Performance

High Performance Design Infra

Game Console Network

HDD

Low Power

Low Power Design Infra

Smart Phone Feature Phone Phone DSC/DVC MP3

Single Platform Design Infra

Smart & Innovative Foundry Solution

ITRS Roadmap (2011)


Accelerating introduction of new structures and channel materials

2011 ITWG Table Timing

2007

2010

2013

2016

2019

2021

Smart & Innovative Foundry Solution

Scaling Trend
Logic and SRAM shrinkage slow down due to patterning limitation and SRAM Vmin
Tr density(A.U in Million Trs/cm2)

Tr density;SRAM(MTr/cm2) Tr density;Logic(MTr/cm2)

32nm

22nm

16nm

11nm

8nm

2008

2010

2012

2014

2016

2018

2020

Source : ITRS 2011

Smart & Innovative Foundry Solution

Key Challenges in Advanced node


Smart & Innovative Foundry Solution

Challenges and Technology Breakthrough


32/28nm : HK/MG overcomes Gate dielectric scaling limit 20nm 14nm : Double patterning & MoL extend litho limit : FinFET solves Lg and Gox Scaling limit

Performance

FinFET
MoL & DPT
HK/MG
Gox

Litho

Lg Gox

32/28nm

20nm 14nm Smart & Innovative Foundry Solution

FinFET Innovation

Smart & Innovative Foundry Solution

FinFET Benefits
Lower leakage current
at same Vth

Lower Vth
at same leakage

Planar FinFET

Planar FinFET

Ioff_Planar Ioff_FinFET

Id

Vth_FinFET

Vth_Planar

Vth

Id
Ioff

Gate Voltage (Vg)

Gate Voltage (Vg)

Smart & Innovative Foundry Solution

AC Performance Gain
FinFET has superior characteristics over planar Lower power at same speed Faster performance at same Iddq

Lower Power

Log Iddq(a.u.)

Planar

FinFET

Faster

Delay(a.u.)

Smart & Innovative Foundry Solution

Summary
Market and technology convergence into mobile multimedia and single platform Samsung is investing in advanced technology nodes to satisfy market requirement

Smart & Innovative Foundry Solution

Thank You
Smart & Innovative Foundry Solution

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