Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • 186 views

    K2642

    Uploaded by

    meliceri
    This document provides specifications and performance characteristics for the N-channel silicon power MOSFET 2SK2642-01MR from FUJI Power. Key details include: - It has a maximum drain-source voltage of 500V, continuous drain current of 15A, and pulsed drain current of 60A. - Electrical characteristics are provided such as a drain-source breakdown voltage of 500V, gate threshold voltage of 3.5V, and drain-source on-state resistance of 1.65 ohms typical. - Graphs illustrate characteristics such as typical output, transfer and capacitance performance over voltage and current conditions.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    K2642

    Uploaded by

    meliceri
    186 views4 pages
    This document provides specifications and performance characteristics for the N-channel silicon power MOSFET 2SK2642-01MR from FUJI Power. Key details include: - It has a maximum drain-source voltage of 500V, continuous drain current of 15A, and pulsed drain current of 60A. - Electrical characteristics are provided such as a drain-source breakdown voltage of 500V, gate threshold voltage of 3.5V, and drain-source on-state resistance of 1.65 ohms typical. - Graphs illustrate characteristics such as typical output, transfer and capacitance performance over voltage and current conditions.

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications and performance characteristics for the N-channel silicon power MOSFET 2SK2642-01MR from FUJI Power. Key details include: - It has a maximum drain-source voltage of 500V, continuous drain current of 15A, and pulsed drain current of 60A. - Electrical characteristics are provided such as a drain-source breakdown voltage of 500V, gate threshold voltage of 3.5V, and drain-source on-state resistance of 1.65 ohms typical. - Graphs illustrate characteristics such as typical output, transfer and capacitance performance over voltage and current conditions.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    186 views4 pages

    K2642

    Uploaded by

    meliceri
    This document provides specifications and performance characteristics for the N-channel silicon power MOSFET 2SK2642-01MR from FUJI Power. Key details include: - It has a maximum drain-source voltage of 500V, continuous drain current of 15A, and pulsed drain current of 60A. - Electrical characteristics are provided such as a drain-source breakdown voltage of 500V, gate threshold voltage of 3.5V, and drain-source on-state resistance of 1.65 ohms typical. - Graphs illustrate characteristics such as typical output, transfer and capacitance performance over voltage and current conditions.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    2SK2642-01MR

    N-CHANNEL SILICON POWER MOS-FET


    Features
    High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=35V Guarantee Avalanche-proof

    FUJI POWER MOS-FET

    TO-220F15

    2.54

    Applications
    Switching regulators UPS DC-DC converters General purpose power amplifier
    3. Source

    Equivalent circuit schematic


    Drain(D)

    Maximum ratings and characteristicAbsolute maximum ratings


    (Tc=25C unless otherwise specified)
    Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 500 15 60 35 88.7 50 +150 -55 to +150 Unit V A A V mJ W C C
    Gate(G) Source(S)

    *1 L=0.72mH, Vcc=50V

    Electrical characteristics (Tc =25C unless otherwise specified)


    Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=35V VDS=0V ID=7.5A VGS=10V ID=7.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=15A VGS=10V RGS=10 L=100H Tch=25C IF=2xID VGS=0V Tch=25C IF=ID VGS=0V -di/dt=100A/s Tch=25C 15 1.1 500 8.0 1.65 Tch=25C Tch=125C

    Min.
    500 3.5

    Typ.

    Max. Units
    V V A mA nA S pF

    4.5

    4.0 4.5 10 500 0.2 1.0 10 100 0.44 0.55 9.0 1400 2100 250 380 110 170 30 50 110 170 90 140 55 90

    ns A V ns C

    Thermalcharacteristics
    Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient

    Min.

    Typ.

    Max.
    2.50 62.5

    Units
    C/W C/W

    FUJI POWER MOSFET


    Characteristics
    Typical output characteristics ID=f(VDS):80s pulse test,Tc=25 C
    40 VGS=20V 35 10V 30 8V 25 1.5 2.0
    o

    2SK2642-01MR

    Drain-source on-state resistance RDS(on)=f(Tch):ID=7.5A,VGS=10V

    RDS(on) [ ]

    ID [A]

    20 7V 15 6.5V

    1.0

    max.

    typ. 10 0.5

    6V 5 5.5V 0 0 5 10 15 20 25 30 5V 35 0.0 -50 0 50 100 150


    o

    VDS [V]

    Tch [ C]

    Typical transfer characteristic ID=f(VGS):80s pulse test,VDS=25V,Tch=25 C


    o

    Typical drain-source on-state resistance RDS(on)=f(ID):80 s pulse test, Tc=25 C


    4.0 VGS= 5V 3.5 5.5V 6V 6.5V 7V
    o

    10

    3.0

    2.5 10
    0

    RDS(on) [ ]
    0 1 2 3 4 5 6 7 8 9 10

    ID [A]

    2.0

    1.5

    10

    -1

    1.0

    0.5

    10

    -2

    0.0 0 5 10 15 20 25

    VGS [ V ]

    ID [ A ]

    Typical forward transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C


    o

    Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS


    6.0

    5.0 10
    1

    max. 4.0 typ. min. 3.0

    10

    VGS(th) [V]

    gfs [s]

    2.0

    1.0

    10 10-1

    -1

    0.0 10
    0

    10

    -50

    50

    100
    o

    150

    ID [A]

    Tch [ C ]

    FUJI POWER MOSFET


    Typical capacitances C=f(VDS):VGS=0V,f=1MHz
    10n 400 Vcc=400V 350

    2SK2642-01MR
    Typical gate charge characteristic VGS=f(Qg):ID=15A,Tc=25 C
    40
    o

    300 Ciss 1n 250 250V

    0V 35 10 c= V Vc 250 V 0 40 30

    25

    VGS [V]

    VDS [V]

    C [F]

    200

    20

    Coss 150 100p Crss 100 100V 10 15

    50

    10p -2 10

    0 10
    -1

    10

    10

    10

    20

    40

    60

    80

    100

    120

    140

    160

    0 180

    VDS [V]

    Qg [nC]

    Forward characteristic of reverse of diode IF=f(VSD):80 s pules test,VGS=0V


    70

    Power Dissipation PD=f(Tc)

    60 10
    1

    Tch=25 C typ.

    50

    IF [A]

    PD [W]

    10

    40

    30

    10

    -1

    20

    10

    10

    -2

    0.0

    0.2

    0.4

    0.6

    0.8

    1.0

    1.2

    1.4

    50

    100

    150

    VSD [V]

    Tc [ C ]

    Safe operating area ID=f(VDS):D=0.01,Tc=25 C Transient thermal impedande Zthch=f(t) parameter:D=t/T


    10
    1

    10

    10 0.5 10
    0

    t=0.01s DC 1s 10s 100s

    Zthch-c [K/W]

    ID [A]

    0.2 0.1 0.05 10


    -1

    10

    1ms

    0.02 10 0.01 0
    -1

    10ms 100ms

    10 -5 10

    -2

    10

    -4

    10

    -3

    10

    -2

    10

    -1

    10

    10

    10

    -2

    10

    10

    10

    10

    t [s]

    VDS [V]

    FUJI POWER MOSFET


    Avalanche energy derating Eas=f(starting Tch):Vcc=50V,IAV=15A
    100

    2SK2642-01MR

    80

    60

    Eas [mJ]

    40

    20

    50
    o

    100

    150

    Starting Tch [ C ]

    You might also like