OLED Display

1. Introduction 2. OLED & PLED materials 3. Device Operation 4. Device Performance 5. OLED Display - Full color OLED - PMOLED and AMOLED - Emission type - AMOLED products 6. Summary
-1-

1. Introduction

Display

Electronic information displays Projection

CRT

Direct-view

Off-screen
Non-coherent displays Nonemitter Coherent holograms

Flat-panel DMD Light valve CRT TMA LCOS Shadow Beam Monomask index chrome Emitter

Liquid-crystal Electro- Electro- Ferrochromic phoretic electric Active matrix Passive matrix TN STN FLC others

Luminescence Incandescence

Plasma TFT MOS MIN Diode others addressed CL (Flat CRT) FED VFD EL Inorganic Organic Polymer Small Molecule
-2-

LED

Gas discharge (PDP) AC DC

1. Introduction

Luminescence
Excitation Source

PL

Photoluminescence

PDP,

EL

Electroluminescence

Electric Field Cathode Ray (Electron)

V

OLED, laser diode

CL

Cathodeluminescence

CRT, FED

Inorganic Semiconductor LEDs (p-n junction LED)

i

-3-

1. Introduction

What is OLED display?

Cathode EIL / ETL EML HIL / HTL Anode (ITO, IZO) Substrate

Light
OLED (Organic Light Emitting Diode):
- ,
(Exciton) , .

-4-

1. Introduction

History of OLED

LTPS-TFT 17 Full color OLED a-Si TFT 20 Full color OLED LTPS-TFT 24.2 Full color OLED LTPS-TFT 15.5 Full color OLED

- 2002 TMD - 2003 CMO - 2003 Sony - 2003 SS SDI

LTPS-TFT 20.1 Full color OLED - 2004 a-Si TFT 21 Full color OLED - 2004 a-Si TFT 40 Full color OLED - 2005

LG.Philips LCD Samsung Samsung

-5-

1. Introduction
(Small molecule) (Polymer) (Fluorescence) (Phosphorescence)

OLED

Bottom Emission Top Emission

Color

RGB LED Blue EL + CCM White EL + C/F

Passive Matrix Active Matrix

-6-

1. Introduction
TFTTFT- LCD LCD AMOLED AMOLED

AMOLED vs. TFT-LCD

Advantages of AMOLED
No backlight : Thinner & lighter

B/L

TFT

No LC : Fast Response time Less cell process : Simple process

TFT C/F

OLED /PolyLED

Wide viewing angle High brightness Better color purity

LC

Polarizer Glass C/F + BM ITO Polyimide LC Polyimide TFT Glass Polarizer Back Light

Polarizer Glass TFT Organic EL Cathode Encapsulation

Easily applicable to flexible display

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1. Introduction

Market Forecast

2007 main display AMLCD 50.7% , OLED main display 5,300 , main display 10% .

Mobile Phone Main Display ( )

Mobile Phone Sub Display ( )

( x 1000)

600,000 400,000 200,000 0

( x 1000)
2004 2005
132,761 170,368 194,789 10,990

200,000 150,000 100,000 50,000 0

MSTN CSTN AMLCD OLED
2004 2005 2006 2007

2006
115,590 128,770 239,895 41,120

2007
110,917 100,852 272,791 53,495

MSTN 179,554 CSTN 160,027 AMLCD 153,524 2,266 OLED

50,251 34,562 30,537 18,115

47,442 52,706 45,217 20,780

22,282 34,329 59,154 22,720

17,059 21,562 62,002 24,152

Source : DisplaySearch Q4 03 Quarterly mobile phone shipment and forecast report

-8-

1. Introduction

Display Market

QXGA Resolution
Monitor Zone

AMOLED
EWS

UXGA SXGA XGA SVGA VGA

CarNavi. IMT QVGA 2000 Mobile Zone PDA Note PC

Monitor

TV Desktop Monitor

TFT
Digital HD TV

DPaper Monitor
CRT TV FPD PRT TV

TV Zone

Size (Inch) 10 20 30
-9-

40

50

60

1. Introduction

OLED Product Roadmap

- 10 -

1. Introduction

OLED Product Roadmap

Display Display

* OLEDs 2003 by UDC

- 11 -

1. Introduction

OLED Display History

2004

LPL 20.1

SS 21

Epson 40 Tiled

Sony 3.8

- 12 -

1. Introduction

Emission Mechanism

- 13 -

2. OLED & PLED Materials

Small molecular OLED

Small molecular OLED

Formation of organic film and cathode metal Vacuum evaporation

- 14 -

2. OLED & PLED Materials

Small molecular OLED

Optical absorption and photoluminescence

Absorption and PL emission spectra of Alq3

I-V characteristics of the ITO/TPD/Alq3/Al device

- 15 -

2. OLED & PLED Materials

Polymer LED
J.H. Burroughes et al.
Nature 347, 539 (1990)

Polymer LED

External circuit

Al or Ca

PPV ITO Glass

Formation of organic film Spin coating, Dip-coating, Ink-jet Formation of cathode metal Vacuum evaporation
- 16 -

2. OLED & PLED Materials

Polymer LED

Optical absorption, PL and EL of PLED

Absorption, PL and EL emission spectra of PPV

I-V and L-V characteristics of the ITO/PPV/Al PPV device

- 17 -

2. OLED & PLED Materials

OLED
(, ) () ( Joule ) (;Tg ) ( , ) HOMO, LUMO

Emissive materials : Small-molecular

- 18 -

2. OLED & PLED Materials

Emissive materials : Dye

- 19 -

2. OLED & PLED Materials

Phosphorescent sensitizer

Emissive materials : Polymer

- 20 -

2. OLED & PLED Materials

Emissive materials : Polymer

Hole Transporting Materials

- 21 -

3. Device operation
(i) Quantum efficiency (ii) Carrier injection and transport mechanism (iii) Photonic effects
h+ e-

Basic processes : (i) injection of electron and hole,

h+ - e- pair

(ii) capture to form exciton, (iii) emission

rst

Singlet Singlet 25% exciton exciton

Triplet Tripletexciton exciton 75% direct deactivation direct deactivation

Internal quantum efficiency, int = rstq is the ratio of number of excition formation events within device to number of electrons in external circuit rst is fraction of excitions formed as singlets q is efficiency of radiative decay of excitions

Emission Emission

Thermal Thermal deactivation deactivation

ext

External External emission emission

Internal Internal dissipation dissipation

- 22 -

3. Device operation

- 23 -

3. Device operation

- 24 -

3. Device operation
Excited State Singlet (25%) Triplet(75%)

Ground state

OLED (25%)

OLED(100%)

( & )
Fast decay time(<1) PM-OLED Green

()
( 100%) AM-OLED Blue < 1,000 Hole blocking layer 1~2V

- 25 -

3. Device operation
(i) Quantum efficiency (ii) Carrier injection and transport mechanism (iii) Photonic effects

LUMO : Lowest Unoccupied Molecular Orbital HOMO : Highest Occupied Molecular Orbital - 26 -

3. Device operation

Injection of Charge

Injection dominated mechanisms : thermionic and tunneling emission

Thermionic emission : J. Gmeiner et al., Acta Polym. 44, 201 (1993) J = A*T2exp(-b/kT) A* = 4qk2m*/h3
A*: Richardson constant, m* : effective mass Thermionic emission

Tunneling emission : J. Appl. Phys. 75, 1656 (1994) I F2exp(-/F) = 8(2m*)1/23/2(3qh)-1/2 Metal

Tunneling emission

PPV

In MEH-PPV devices, F-N tunneling model applies at high fields and the barrier is determined by the metal work function and the energy levels of MEH-PPV (I.D. Parker, J. Appl. Phys. 75, 1656, (1994))

- 27 -

3. Device operation
Conduction in organic semiconductor : ohmic conduction and SCLC

Ohmic conduction : J = qn0V/d : P.W.M. Blom et al., Appl. Phys. Lett. 68, 3308 (1996)

Space Charge Limited Current : JSCL = 9/8seV2/d3 : no traps R.N. Marks et al., Synth. Met. 55, 4128 (1996) P.W.M. Blom et al., Appl. Phys. Lett, 68, 3308 (1996) JSCL ~ V(m+1)/d(2m+1) : exponential distribution of traps (m=Tt/T) P.E. Burrows et al., J. Appl. Phys. 79, 7991 (1996)

- 28 -

3. Device operation
(i) Quantum efficiency (ii) Carrier injection and transport mechanism (iii) Photonic effects Fraction of internally generated light that emerges in forward direction is approx. 1/2n2 where n is the internal refractive index External quantum efficiency, ext ~ 1/(2n2) OLED glass

Forward emission

- 29 -

4. OLED Performance
Current balance is set by the size of the barriers at the two electrodes.
Lower voltage operation Higher efficiency Good thermal stability Longer life time

To improve device performance

Introduce HTL, ETL, HIL, EIL

i.e.) Heterostructure
HTL : Hole transporting layer ETL : Electron transporting layer HIL : Hole injecting layer EIL : Electron injecting layer

Balancing of electron and hole currents

- 30 -

4. OLED Performance
Schematic diagram of the EL emission process in a typical multilayer OLED.

HTL EML ETL

Anode (Transperent electrode: ITO, IZO, etc)

HIL

EIL

Metal
Cathode (low work function metal: Ca, Al:Li, Mg:Ag, etc)

Exciton

ITO

1000 ~ 1500

- 31 -

4. OLED Performance

- 32 -

4. OLED Performance

Lifetime

: - ( ) : () ( 1/L0 , L0: )

Log(T) = -a Log(I) + b
(T: , I: (/), a: ) - :

- 33 -

4. OLED Performance

Lifetime

- 34 -

4. OLED Performance

Lifetime

- 35 -

5. OLED Display OLED OLED with high efficiency - Device structure - Material(Phosphorescent OLED) - Processing - Outcoupling , full color - -

- 36 -

5. OLED Display

What is pixel ?

Pixel

B Sub-pixel

R G B
(a) Stripe

R B G G R B
(b) Delta Triad

R G

G B

(c) Quad

Cf.) RGBW sub-pixel

- 37 -

5. OLED Display
Color mix of sub-pixel

Color Mix

15.0 XGA : 0.297mm x 0.099 (85.5 ppi) 17.0 SXGA : 0.264mm x 0.088 (96.2 ppi) 19.0 SXGA : 0.294mm x 0.098 (86.4 ppi) 20.1 UXGA : 0.255mm x 0.085 (99.6 ppi) * ppi : pixel per inch

< 0.03 mixed color

- 38 -

5. OLED Display
Number of Color # of Color = 2n (R) x 2n (G) x 2n (B) n: # of video data bits
3 bit= 8-gray/RGB = 512 colors 4 bit= 16-gray/RGB = 4,096 colors 6 bit= 64-gray/RGB = 262,144 colors 8 bit = 256-gray/RGB = 16,777,216 colors

Color Generation

White balance Control

Dynamic range of RGB data - current, voltage RGB driving TFT size RGB emission time White OLED + color filter

= Display RGB 100% NTSC

) LCD - Note PC : 45%~65% - Monitor : 65%~72% - LCD-TV : 72%

- 39 -

5. OLED Display
CRT : E-beam scanning

Driving Method of FPD

Brightness

0.1~1 msec

time

FPD : Electrical signal scanning

Passive matrix
Brightness

Active matrix
Brightness

time
- 40 -

time

5. OLED Display

Approaches to Full Color OLED

(a) RGB

RGB

C/F

CCM

(b) Color Filter(CF)

White OLED

EL & EL RGB & Patterning Color Color Filter Filter RGB Patterning

Color Reproduction Quality

(c) Color Change Media(CCM)

Blue OLED

- 41 -

5. OLED Display
Shadow mask ()

RGB OLED

Pattern Metal Mask (Shadow Mask) , Pixel

Substrate Fine Metal Mask Issues - Mask ( < 50, ) - Mask - Mask (Mask ) - Mask Alignment ( Mask ) - Mask ( )

Shadow Mask

10-7 Torr

Source

Shadow Mask

- Mask High Resolution - Mask Particle(/Metal) Device (Line , Dark Spot..)

- 42 -

5. OLED Display
Ink-Jet
ITO Ink- Jet Printing Polymer Ink- Jet Print Process
Bank

RGB OLED

Conducting polymer (PFDT/PSS) Bank Channel Red emitter Rhodamine 101/PPV)

Ink-jet

ITO Passivation TR Units Glass Substrate

Insulator

Green emitter (PPV)

Blue emitter (Poly(dialkylfluorene))

Cathode

- 43 -

5. OLED Display
Laser Induced Thermal Imaging (LITI)

RGB OLED

Laser Coating Donor Film Coating Pixel - : Evaporated onto the LITI Donor Film - : Blending onto the LITI Donor Film
Donor Film Nd:YAG LASER Beam Donor Film adhesion cohesion adhesion Substrate Substrate with Anode LTHC LEP HTL (Spin Coating) LEP Coating Laser LITI PLED Device

Encapsulation

LITI Process (R,G,B, 3 times)

Cathode (Evaporation)

LTHC : Light-To-Heat Conversion Layer, LEP : Light Emitting Polymer

- 44 -

5. OLED Display

OLED Displays Passive matrix Active matrix Analog driving method

- Simple pixel circuit (Two TFT + 1 Capacitor) - Compensation pixel circuit

Digital driving method

- Time ratio gray scale method - Area ratio gray scale method

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5. OLED Display

PMOLED vs. AMOLED

Passive Matrix (PM)

Active Matrix (AM)

Cathode Organic film TFT Glass substrate

Matrix EL device Line Emission
1)

Anode

Glass substrate
Matrix EL TFT Frame time Emission
1) TFT : Thin Film Transistor

- 46 -

5. OLED Display
Cathode

PMOLED

Anode (ITO) Glass

Data1 Data2 Data3 Datam

A A
Cathode separator Inter insulator ITO Glass

Scan1 Scan2

Organic layer

Cathode

A
Scan3

Glass

Scann

ITO Inter Insulator

- 47 -

5. OLED Display
PMOLED
Scan Line , Data Line Pixel .
Data
Scan 1 Scan 2 Scan 3 Scan 4 Data 1 Data 2 Data 3 Data 4 Data 5 Data 6 t1 t2 t3 t4 t5

PMOLED

1 1 2

Scan

3 4

- 48 -

5. OLED Display

PMOLED Layout

Metal /ITO

Metal

Mask #1
Inter-Insul.

Mask #2
Cathode

Separator

Mask #3
- 49 -

Mask #4

5. OLED Display

PMOLED Process

(1) Metal & ITO patterning

(2) Inter-insulator

ITO glass Cleaning Metal(Mo, Cr) Sputtering

( )

Insulator layer formation : MASK #3

(ITO edge breakdown )

- Photosensitive polymer

Metal & ITO patterning : Mask #1 Metal patterning : Mask #2

- 50 -

5. OLED Display

PMOLED Process

(3) Cathode Separator

(4)

Cathode separator : Mask #4

( pixel cathode line short )

Pretreatment - Plasma treatment : ITO Work function - UV cleaning (Shadow mask )

Reverse Taper angle ( Negative PR )

- 51 -

5. OLED Display

PMOLED Process

(5) (Cathode)

(6) UV

COF Film

Aging

Cell Cut

Probe Test

Pol Lamin.

COF Bond

Out Going Inspec.

(7) Aging, Scribing, Module

- 52 -

5. OLED Display
Grayscale methods
i data1 i data2 idata3 ida tan

PMOLED Grayscale

Pulse-Amplitude modulation(PAM)
VCC

- Current level control - Multiple Current sources - Matching problem

Pulse-Width Modulation(PWM) - ON/OFF timing control - Only One current source

- 53 -

5. OLED Display
AMOLED PMOLED
( : Resolution => 640 x 480, Luminance =>100cd/m2)
32us 16.7ms

PMOLED vs. AMOLED

~ ~

PM

52500cd/m2

AM

100cd/m2

1 Frame Time : 16.7 ms( 60Hz ) 1 line scan time : 32 us( 525 line in 1 frame ) Duty Driving = 100 x 16.7m / 32u 52500 cd/m2

~ ~

- 54 -

~ ~

~ ~

5. OLED Display

12 10 8

PMOLED vs. AMOLED

Efficiency [cd/A]

11 10 9 8
AM Operation PM Operation

Voltage [V]

6 4 2 0 10000 15000 20000 25000 30000

2

5000

Luminescence [cd/m ]

- 55 -

5. OLED Display

PMOLED Power dissipation

In a poly-LED display, there are three sources of power dissipation. 1. Light production: Plight = ILED VLED 2. Capacitive losses: Pcap = C Vswing Vsupply freq. 3. Resistive losses: Pres = I2 R
(Pixel : 300300 um, luminance : 100 cd/m2, efficiency : 15 cd/A, green poly-LED)

Power Dissipation in poly-LED Displays with Increasing Size and Resolution Resolution column/row 80 60 160 120 320 240 640 480 Diagonal (in.) 1.2 2.4 5 10 Plight (mW) 15 80 400 2000 Pcap (mW) 10 110 1300 1800 - 56 Pres (mW) 1 10 300 8000 Ptotal (mW) 26 200 2000 28000 Efficacy (lm/W) 5.3 2.8 1.1 0.3

5. OLED Display
TFT-LCD
TFT : switching

AMOLED

AMOLED
TFTs : switching + current driving Data
Gate line SW

Data
VDD Gate line Cst DRV_TFT

Gate

Storage line

Gate

Cst

LC

OLED Data line

Pixel array

Data line GND

Pixel array

TFT-LCD
- 57 -

AMOLED

5. OLED Display

AMOLED Process

INPUT TFT for AM

Evaporation
Metal Source
Evaporation

R/G/B Source
Evaporation Pre Treatment

UV Expose

Encapsulation
Sealing Seal Dispensing Getter Input Canister Clean

Back End
Aging Cell Cut Probe Test Pol Lamin.

COF Film

COF Bond

Out Going Inspec.

- 58 -

5. OLED Display
AMOLED Scan Line , Data Line Pixel
( Frame) .

AMOLED

Data
Scan 1 Scan 2 Scan 3 Scan 4 Data 1 Data 2 Data 3 Data 4 Data 5 Data 6 t1 t2 t3 t4 t5

1 1 2

Scan

3 4

- 59 -

5. OLED Display
TFT(Thin Film Transistor)
Gate

AMOLED

Source

Drain

G S D

TFT : CdSe TFT, Organic TFT, a-Si TFT, Poly-Si TFT,

- 60 -

5. OLED Display
Semiconductor layer
Grain boundary Grain

Silicon

Single Crystalline Silicon

Long range order Eg = 1.1 eV No defect CMOS High mobility => ~ 600 Low leakage

Polycrystalline Silicon
Long range order Eg = 1.1 eV Grain boundary CMOS Medium mobility => ~ High off current - 61 -

amorphous Silicon
No long range order Large bandgap Many Trap states NMOS Low mobility => 0.5 ~ 1 High photo current

5. OLED Display
a-Si:H formation
SiH4 + H2 amorphous Si deposition
Gas phase transport Plasma

a-Si:H

Surface desorption of byproduct (Exhaust)

Deposition film

Migration & chemical reaction

Substrate

Electron drift mobility Hole drift mobility Optical band gap 300K conductivity n+ a-Si conductivity H content

1 cm2/Vs 0.003 cm2/Vs 1.5~1.8 eV 10-11/cm 10-2/ /cm 10 at%

- 62 -

5. OLED Display
a-Si:H TFT
GATE / DATA

a-Si:H TFT

Bank

Patterning

/ (Deposition & Patterning Process) Photo Lithography

(Deposition)
PECVD
RF

(Cleaning)

PR (PR Coating)

(Exposure)

(Develop)

(Etch)
(Wet Etch)

PR (PR Strip)

(Inspection)

H H H Si H

Si N Si N Si N

H H

N H
H

SPUTTER
Ar+ Al Al Al Al Al

(Dry Etch)
Gas RF

DC
Al Ar+

FO Si

PLASMA
Si
SiF4

TARGET

SUBSTRATE

- 63 -

5. OLED Display
a-Si:H TFT I-V
Transfer curve Output curve

a-Si:H TFT

- 64 -

5. OLED Display
a-Si:H TFT Stability : SNU (SID 2005)

a-Si:H TFT

- 65 -

5. OLED Display
Poly-Si formation Solid Phase Crystallization (SPC) base
Pure SPC - High Temperature SPC - Low Temperature SPC Metal induced Crystallization ( MILC ) - Metal Induced Lateral Crystallization ( MILC ) - Continuous Grain Silicon (CGS) - Field Enhanced Metal Induced Crystallization (FEMIC) Alternating Magnetic Field Crystallization (AMFC)

Poly-Si TFT

Laser base
Excimer Laser Annealing (ELA) Sequential Lateral Solidication (SLS)
- 66 -

5. OLED Display
Excimer laser crystallization
Overlapped pulse scanning
8000 Laser Beam Length 7000 Overlap : 90% (10 Shot) Overlap : 92% (13 Shot) Overlap : 94% (17 Shot) Overlap : 96% (25 Shot)

LTPS TFT

Scanning Distance per Pulse (Ls)

Avrg. Grain Size[A]

6000 5000 4000 3000 2000 1000 E0

Overlapping Rate = 100 X (Lw-Ls)/Lw

Laser Beam Width (Lw)

Non-Uniform Grain Region

E0+10 E0+20 E0+30 E0+40 E0+50 E0+60

Laser Energy Density [mJ/cm2]

- 67 -

5. OLED Display
Excimer laser crystallization
Multiple shot effect 1 Shot 5 Shots

LTPS TFT

10 Shots

20 Shots

- 68 -

5. OLED Display
LTPS TFT Process
Buffer SiO2 depo. a-Si:H depo.
ITO

LTPS TFT

Annealing Interlayer SiO2 Contact hole open S/D metal depo. S/D Patterning Passivation depo. Passi hole open ITO depo. ITO Patterning Bank layer depo. Bank Patterning

Dehydrogenation
Bank layer Passi-SiNx

Laser annealing Active patterning

Source Gate

Drain

INT-SiO2 Gate

Drain

Source

Storage doping Gate SiO2 depo.

P-Si

Buffer SiO2

P-Si

Gate metal depo. Gate patterning LDD doping n-type doping p-type doping
- 69 -

p-type TFT

Storage capacitor

n-type TFT

5. OLED Display
I-V characteristics of LTPS TFTs
Transfer curve
0.01 1E-3 1E-4 1E-5 1E-6
Drain Current(A)

LTPS TFT

Mobility : 68 cm2/V.sec Ioff : 0.16 pA/um

Mobility : 68 cm2/V.sec Ioff : 2.78 pA/um

1E-7 1E-8 1E-9 1E-10 1E-11 1E-12 1E-13 1E-14 1E-15 -20 -15 -10

5 ) V ( e 0 g a t l 5 o - V e t 0 a 1 - G 5 1 0 2 -

0 1

5 1

-5

10

15

20

25

Gate Voltage (V)

- 70 -

5. OLED Display
Uniformity of LTPS TFTs
Vth [V] -1 1 -1.25 -1.5 -1.75 -2 -2.25 -2.5
Vth

LTPS TFT

Vth [V] -1

10 13 16 19 22 25 28

-1.25 -1.5 -1.75 -2 -2.25 -2.5

10 13 16 19 22 25 28

Vth

ufl_m [cm /Vs] 90 85 80 75 70 65 60 55 50 1 4 7 10 13 16 19 22 25 28

90 85 80 75

ufl_m [cm /Vs]

ufl_m

70 65 60 55 50 1 3 5 7 9 11 13 15 17 19 21 23 25 27

ufl_m

- 71 -

5. OLED Display
a-Si TFT Hysteresis : SNU (SID 2005)

TFT Hysteresis

- 72 -

5. OLED Display

TFT Hysteresis

LTPS TFT Hysteresis : POSTECH & LPL (JJAP, 43, p. L482 (2004)
1E-4 1E-5 1E-6 1E-7 1E-8
TFT W/L=8/20 [m/m] forward gate voltage sweep reverse gate voltage sweep

Vds = -10 V

Vds = -0.1V

Ids [A]

1E-9 1E-10 1E-11 1E-12 1E-13 1E-14 10 5 0 -5 -10 -15

Vth = 0.6 [V]

Vgs [V]

- 73 -

5. OLED Display
Two TFT and One capacitor pixel structure
data Line Gate Line VDD

AMOLED

Saturation region operation:

IOLED = I DSsat = Cox p

Cst

W (VSG Vthp ) 2 2L

Device-to-device variation on panel : Brightness uniformity on panel

SW_TFT

DRV_TFT OLED GND

Run-to-run variation : Panel-to-to panel brightness uniformity VDD IR drop problem TFT hysteresis : Image Sticking

Ids

VGS

VDD VTFT VOLED

Vds

< Chess pattern > - 74 -

<Middle gray>

5. OLED Display
Voltage distribution of VDD line : POSTECH & KIT (ITC 2005)
VDD
1

AMOLED

RP RPV

RH

RH IPIXEL

IPIXEL

RH RPV VDD
2

RP RH RPV RH IPIXEL RH IPIXEL

VDD
N

RP

I PIXEL

VDD [V]

IPIXEL

Row

Column

< VDD structure >

B A
VDD [V]

< Voltage distribution for full white >

15 A-A' B-B' 14.5

B A

VDD [V]

14

13.5

13

150

300

450

600

Row

Column

< Voltage distribution for test chess pattern>

- 75 -

5. OLED Display
Voltage distribution of VDD line : POSTECH & KIT (ITC 2005)
VDD
1

AMOLED

VDD
2

VDD
M

RPH RV

RPH RV

RPH

RP RV RP VDD
1

VDD
1

RP RPV

RH I PIXEL RV RH

RH I PIXEL RV RH I PIXEL RV

RPV

VDD
2

RPV RP

RH

RP RPV RH
`

VDD
2

RPV VDD
N

I PIXEL RV RH I PIXEL RV RV I PIXEL

RV RH

RPV VDD RP
N

RP

RV

RP VDD
1

RPH

RP VDD
2

RPH

RPH

VDD[V]

RP VDD
M

Row

Column

< VDD structure >

B A

< Voltage distribution for full white >

15

14.5

VDD [V]

B A

14

A-A' B-B'

13.5

13

Row

Column

150

300

450

600

< Voltage distribution for test chess pattern> - 76 -

5. OLED Display Poly-Si TFT AMOLED

Non-uniformity of electrical characteristics in driving TFTs Mobility, subthreshold swing, threshold voltage Luminance non-uniformity

AMOLED

a-Si TFT AMOLED

Low cost, flexible displays Well-established large manufacturing base for AMLCD displays Poor mobility and reliability Large-sized driving TFT High operation voltage power consumption increase Stress-induced threshold voltage shift Luminance non-uniformity & degradation

- 77 -

5. OLED Display

AMOLED Driving Methods

AMOLED AMOLEDDriving Driving Analog AnalogDriving Driving Conventional Voltage programmed Compensation CompensationCircuit Circuit Voltage Programmed Current Programmed ARG*1 TRG*2 Digital DigitalDriving Driving

TFT TFT TFT

TFT TFT TFT

Hybrid Driving

Feedback Driving

*1) Area ratio gray scale method *2) Time ratio gray scale method

- 78 -

5. OLED Display

Digital Driving Methods

Area ratio gray scale method (ARG)

2m gray scales can be acquired. m=2, the areas of the sub-pixels are 1 : 2. Four gray scales are acquired.
- 79 -

5. OLED Display
ARG & TRG

Digital Driving Methods

The frame time is divided into plural sub-frames. 2m n gray scales can be acquired. m=n=2, the time of the sub-frames are 1 : 4. 16 gray scales are acquired.
- 80 -

5. OLED Display

Digital Driving Methods

SEL (SID 2000) : Display Period Separated (DPS) Driving

<Pixel circuit>
Gate 1 Gate 2 Gate N EL_cathode

SF1 TU1

SF2 TL1 TU3

SF3 TL3

OFF

ON

<Timing diagram of DPS driving method> <Circuit diagram> Similar to PDP driving method. TU has no contribution to light emission. Cathode voltage variation required TLn have the ratio of 1:2:4:8:16:32 in length. - 81 -

5. OLED Display

Digital Driving Methods

SEL (SID 2000) : Simultaneously Erased Scan (SES) Driving

<Timing diagram >

Good uniformity Difficult to embody the driver system Frame memory is needed.
<Pixel circuit>

The degradation of image quality is more serious than analog driving method
- 82 -

5. OLED Display
Hitachi (SID 2002) : Clamped Inverter Driving

Digital Driving Methods

<Pixel circuit>

<Timing diagram >

SID 2003

SID 2004 - 83 -

SID 2004

5. OLED Display

Digital Driving Methods

Ryukoku (IDW 2004) : TRG + Current uniformization

<Pixel circuit>

<Timing diagram >

- 84 -

5. OLED Display

Digital Driving Methods

SEL & Pioneer (SID 2004) - Resolve Luminance variation depending on ambient temperature &
degradation of OLED

<Pixel circuit>

<OLED Luminance >

- 85 -

5. OLED Display
SNU (SID 2002)

Voltage Programmed Driving Methods

VDD Select T3 B C1

Vdata T1

A T2 T4

<Pixel circuit>
Reset Storing Data

OLED GND

ID = 1/ 2 k (VGS _T 2 Vth _T 2 )2 = 1/ 2 k [VDD (Vdata Vth _T 3 ) Vth _T 2 )]2 = 1/ 2 k (VDD Vdata )2

<Timing diagram >

If Vth_T3=Vth_T2

Compensation : Vth (o), mobility (x), VDD (x) Mismatch problem between T2 and T3 Low contrast ratio Emission control S/W between OLED & T2 (IDW 2002)
- 86 -

5. OLED Display

Voltage Programmed Driving Methods

Hanyang Univ. & SS SDI (Euro-display 2002)

1 2

<Timing diagram >

1. V G = VI << V data - V th_T3 2. V G = V data - V th_T3

<Pixel circuit>

I OLED =

1 K V SG V th_T4 2

1 K (VDD V data 2

)2

If Vth_T3=Vth_T4
Compensation : Vth (o), mobility (x), VDD (x) Mismatch problem between T3 and T4 Low contrast ratio (C/R)
- 87 -

5. OLED Display
SS SDI (SID 2003)

Voltage Programmed Driving Methods

Hanyang Univ. (IMID 2003)

Data Line Select [n] VDD

T1
Select [n1] em [n]

C1 T3 T2 T4 T5

<Pixel circuit>

<Pixel circuit>

I
Select [n-1] Select [n] em[n]

II

III

<Timing diagram > Improve contrast ratio (C/R) - 88 -

<Timing diagram >

5. OLED Display
Sarnoff Corp. (IEDM 1998)

Voltage Programmed Driving Methods

Vdata

1 2

<Timing diagram >

1. V G << VDD - V th 2. V G = VDD - V th 3. V G = VDD - V th <Pixel circuit>

V data C1 C1 + C2

I OLED

1 = K ( V SG V th 2

1 V data C1 = K 2 C1 + C2

Compensation : Vth (o), mobility (x), VDD (o)

- 89 -

5. OLED Display
SS SDI & Hanyang Univ. (IDW 2003)

Voltage Programmed Driving Methods

1 2

<Timing diagram >

V SG_M1 = VDD V data + V th_M1

I OLED =
<Pixel circuit>

1 K (V SG _ M 1 V th_M1 ) 2 2 1 = K (V DD V data ) 2 2

Compensation : Vth (o), mobility (x), VDD (x)

- 90 -

5. OLED Display
SS SDI & Hanyang Univ. (IDW 2003)

Voltage Programmed Driving Methods

<Timing diagram >

V SG_M1 = VDD V data + V th_M1

I OLED =
<Pixel circuit>

1 K (V SG _ M 1 V th_M1 ) 2 2 1 = K (V DD V data ) 2 2

Compensation : Vth (o), mobility (x), VDD (x)

- 91 -

5. OLED Display
Hanyang Univ. & SS SDI (SID 2004)

Voltage Programmed Driving Methods

1. Scan ON VCST = Vdata - VDD + Vth_T1 2. Scan OFF

VG_T1 = VSUS - VCST = VSUS Vdata + VDD Vth _ T 1 VSG_T1 = VDD VG _ T 1 = Vdata - VSUS + Vth_T1

<Pixel circuit>

IOLED =

<Timing diagram >

1 K (VSG _ T 1 Vth_T1 )2 2 1 = K (Vdata VSUS )2 2

Compensation : Vth (o), mobility (x), VDD (o)

- 92 -

5. OLED Display
KAIST (IDW 2001)
VD Select1 T2 C2 T4 Select2 C1 T3 Select1

Voltage Programmed Driving Methods

Select1 T1 Select2 Data line Vcomp

Data line

OLED

(1)

(2)

(3)

<Timing diagram >

<Pixel circuit>

VC

(1) (2) (3)

Initialization, VG_T1 = GND Compensation, VC1 = Vth_T1 Data input, VG_T1 = Vdata +Vth_T1

Compensation : Vth (o), mobility (x), Vc (X)

- 93 -

5. OLED Display
SSE (SID 2005)

Voltage Programmed Driving Methods

TNO

<Pixel circuit>

<Timing diagram >

(1) Initialization, VC1=VDD (when, Vref = 0 V) (2) Compensation, VC1= VTO_OLED +Vth (3) Data input, VG_DTFT = Vdata +VTO_OLED +Vth

Compensation : Vth (o), mobility (x), GND (x) Low contrast ratio
- 94 -

5. OLED Display
Sarnoff Corp. (IEDM 1998)

Current Programmed Driving Methods

Toshiba (SID 2003)

<Pixel circuit>

<Pixel circuit>

1. Programming Period

2. Driving Period

IData =
<Timing diagram >

VSG

1 K (VSG Vth )2 2 I = Vth + 2 Data K

IOLED =

1 K (VSG Vth )2 2 = IData

Compensation : Vth (o), mobility (o), VDD (o)

Difficult to display low gray level
- 95 -

5. OLED Display

Current Programmed Driving Methods

Sony (SID 2001) : Current mirror type,

<Pixel circuit>

<Timing diagram >

Compensation : Vth (o), mobility (o), VDD (o) W/L of T4 is larger than that of T2 Reduce settling time Mismatch problem between T2 and T4
- 96 -

5. OLED Display

Current Programmed Driving Methods

SNU (IDW 2002) : Current scaling type

<Pixel circuit>

<Timing diagram >

Compensation : Vth (o), mobility (o), VDD (o) Current scaling type Reduce settling time Mismatch problem between T3 and T4
- 97 -

5. OLED Display
Hanyang Univ. & SS SDI (IDW 2002)

Current Programmed Driving Methods

<Pixel circuit>

<Timing diagram >

Compensation : Vth (o), mobility (x), VDD (o) Capacitive coupling of C2 Solve settling problem
- 98 -

5. OLED Display

Current Programmed Driving Methods

Michigan Univ & Kyushu Univ. (IEEE2001)

Waterloo Univ. (Eurodisplay. 2002)

<Pixel circuit>

<Pixel circuit>

- 99 -

5. OLED Display
Hanyang Univ. & SS SDI (SID 2005)

Feedback Driving Methods

<Pixel circuit>

<Operation Algorithm>

<Timing diagram > - 100 -

<Simulation result>

5. OLED Display
Waterloo Univ. & Ignis (SID 2005)

Feedback Driving Methods

<Pixel circuit>

<Pixel circuit>

<Pixel circuit> - 101 -

<Pixel circuit>

5. OLED Display
Philips SID 2002 SID 2004

Feedback Driving Methods

<Pixel circuit>

<Pixel circuit>

- 102 -

5. OLED Display
Hanyang Univ. (AMLCD 2005)

Hybrid Driving Methods

<Data driver>

<Pixel circuit>

<Timing diagram >

- 103 -

5. OLED Display
Ignis (SID 2005)

Hybrid Driving Methods

<Schematic diagram>

<Pixel circuit> - 104 -

<Operation Algorithm>

5. OLED Display

Emission Type

Bottom Emission OLED

Metal Cathode Transparent Anode

Top Emission OLED

Semi-transparent Cathode

Light

Buffer Layer

Transparent Plate Emissive Layer Emissive Layer

Al Wiring

Light

Metal Anode

Pixel

- 105 -

5. OLED Display
Data driver IC

Data Driver IC

Integrated data driving circuit

HSYNC HCLK

Shift Register Sampling Latch

Voltage mode - Accurate output buffer

RGB data

Current mode
LOAD

Holding Latch Voltage or Current DAC Output Buffer

- Accurate current DAC Control nano-level current Devices non-uniformities - Accurate current S/H circuit design - Accurate pre-charge circuit design - gamma correction

Reference Voltage or Current

Channel Outputs
- 106 -

5. OLED Display

Integrated Data Driving circuits

SS SDI (IDW 2004) : External D-IC + analog sampling

<Schematic diagram of data driving circuit>

- 107 -

5. OLED Display

Integrated Data Driving circuits

SS SDI (SID 2005) : RGB adjustable gamma compensation

<gamma compensation circuit>

<Schematic diagram>

6-bit DAC : 3-bit decoder and voltage selector + 3-bit decoder and resister ladder
- 108 -

5. OLED Display

Integrated Data Driving circuits

SS SDI & Hanyang Univ. (IDW 2004) : External D-IC + DeMux

<Schematic diagram>

<1:3 Current DeMux>

<Current sample and hold circuit> - 109 -

5. OLED Display
AU (IDW 2004)

Integrated Data Driving circuits

<Schematic diagram>

<Current DAC>

<Data driving circuit> <Current S/H circuit> - 110 -

5. OLED Display
AU (SID 2004)

Integrated Data Driving circuits

<Schematic diagram>

<Data driving circuit>

<LAAT S/H circuit> - 111 -

<Pixel>

5. OLED Display
NEC (IDW 2002)

<Pre-charge circuit> <Schematic diagram>

<Timing diagram> - 112 -

<Pixel>

5. OLED Display
NEC (Eurodisplay 2002)

Integrated Data Driving circuits

<Schematic diagram> <Timing diagram>

<1 bit DCC> <DAC block diagram> - 113 -

5. OLED Display
AU (IDW 2003)

Integrated Data Driving circuits

<6-bit DAC> <Data driver diagram>

<Pre-charging circuit> <S/H circuit> - 114 -

5. OLED Display
Digital Still Camera ( Kodak Easyshare LS633, 2003. 5 )
2.16 inch, 521 x 218 Dot pitch ; 0.084 x 0.151 mm2 Color arrangement : RGB delta Gate driver integration Analog sampling data driver integration

AMOLED Product

- 115 -

5. OLED Display

PHOLED Product

Sub-Display of Mobile Phone ( Fujitsu F5005iGPS, 2004. 4)

1.1 inch, 96 x 72 Pioneer, PM-PHOLED 4,096 color Phosphorescent developed by UDC

- 116 -

5. OLED Display
PDA ( Sony Clie PEG-VZ90, 2004. 9 )
3.8 inch, 480 x 320 Top emission Contrast ratio : 1000: 1 Viewing angle : 180 Response time : 1 us

AMOLED Product

- 117 -

5. OLED Display

AMOLED Development

SS SDI (SID 2005) - LTPS TFT - 2.6 480 x 640 (302ppi) - LITI (Laser-induced thermal imaging) - Top emission -200 cd/m2

LPL LGE (2004) - LTPS TFT - 20.1 1280 x 800 - Small Molecule - > 1,000 cd/m2

SSE (2005) - a-Si TFT - 40 1280 x 800 - White OLED + Color filter - 600 cd/m2 - Color Purity : 80%

- 118 -

6. Summary OLED performance is rapidly improving

Lifetime Efficiency & power consumption Color purity

Innovation is needed
OLED performance & fabrication processes Brightness uniformity Global uniformity : IR drop of power lines Local uniformity : Electrical characteristics of Driving TFT (Poly-Si TFT) Reliability OLED device : lifetime, thermal reliability Driving TFT : degradation (a-Si:H TFT)

In the near future, OLED display will be widely used and the most attractive display of FPD.
- 119 -