TDA2009A

10 +10W STEREO AMPLIFIER

. . . . .

HIGH OUTPUT POWER (10 + 10W Min. @ D = 1%) HIGH CURRENT CAPABILITY (UP TO 3.5A) AC SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION SPACE AND COST SAVING : VERY LOW NUMBER OF EXTERNAL COMPONENTS AND SIMPLE MOUNTING THANKS TO THE MULTIWATT PACKAGE.

MULTIW ATT11 ORDERING NUMBER : TDA2009A

DESCRIPTION The TDA2009A is class AB dual Hi-Fi Audio power amplifier assembled in Multiwatt package, specially designed for high quality stereo application as Hi-Fi and music centers. PIN CONNECTION

May 1995

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SCHEMATIC DIAGRAM

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ABSOLUTE MAXIMUM RATINGS
Symbol Vs Io Io Ptot Tstg, Tj Supply Voltage Output Peak Current (repetitive f 20 Hz) Output Peak Current (non repetitive, t = 100 s) Power Dissipation at Tcase = 90 C Storage and Junction Temperature Parameter Value 28 3.5 4.5 20 40, + 150 Unit V A A W C

THERMAL DATA
Symbol R th j-case Parameter Thermal Resistance Junction-case Max. Value 3 Unit C/W

ELECTRICAL CHARACTERISTICS (refer to the stereo application circuit, Tamb = 25oC, VS = 24V, GV = 36dB, unless otherwise specified)
Symbol Vs Vo Id Po Supply Voltage Quiescent Output Voltage Total Quiescent Drain Current Output Power (each channel) Vs = 24V Vs = 24V d = 1%, Vs = 24V, f = 1kHz R L = 4 R L = 8 f = 40Hz to 12.5kHz R L = 4 R L = 8 Vs = 18V, f = 1kHz R L = 4 R L = 8 f = 1kHz, Vs = 24V Po = 0.1 to 7W Po = 0.1 to 3.5W Vs = 18V Po = 0.1 to 5W Po = 0.1 to 2.5W R L = , Rg = 10k f = 1kHz f = 10kHz 300 f = 1kHz, Non Inverting Input R L = 4 R L = 4 f = 1kHz R g = 10k (1) R g = 10k (2) R g = 10k fripple = 100Hz, Vripple = 0.5V 35.5 70 200 20 80 36 0.5 1.5 2.5 55 145 8 36.5 RL = 4 RL = 8 RL = 4 RL = 8 Parameter Test Conditions Min. 8 11.5 60 12.5 7 10 5 7 4 0.2 0.1 0.2 0.1 60 50 mV k Hz kHz dB dB V V dB C 120 Typ. Max. 28 Unit V V mA W W W W W W % % % % dB

Distortion (each channel)

CT

Cross Talk (3)

Vi Ri fL fH Gv Gv eN SVR TJ
Notes : 1. 2.

Input Saturation Voltage (rms) Input Resistance Low Frequency Roll off ( 3dB) High Frequency Roll off ( 3dB) Voltage Gain (closed loop) Closed Loop Gain Matching Total Input Noise Voltage Supply Voltage Rejection (each channel) Thermal Shut-down Junction Temperature

Curve A 22Hz to 22kHz

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Figure 1 : Test and Application Circuit (GV = 36dB)

Figure 2 : P.C. board and component layout of the fig. 1

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Figure 3 : Output Power versus Supply Voltage Figure 4 : Output Power versus Supply Voltage

Figure 5 :

Distortion versus Output Power

Figure 6 :

Distortion versus Frequency

Figure 7 :

Distortion versus Frequency

Figure 8 :

Quiescent Current versus Supply Voltage

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Figure 9 : Supply Voltage Rejection versus Frequency Figure 10 : Total Power Dissipation and Efficiency versus Output Power

Figure 11 : Total Power Dissipation and Efficiency versus Output Power

APPLICATION INFORMATION Figure 12 : Example of Muting Circuit

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Figure 13 : 10W +10W Stereo Amplifier with Tone Balance and Loudness Control

Figure 14 : Tone Control Response (circuit of Figure 13)

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Figure 15 : High Quality 20 + 20W Two Way Amplifier for Stereo Music Center (one channel only)

Figure 16 : 18W Bridge Amplifier (d = 1%, GV = 40dB)

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Figure 17 : P.C. BOARD and Components Layout of the Circuit of Figure 16 (1:1 scale)

APPLICATION SUGGESTION The recommended values of the components are those shown on application circuit of fig. 1. Different values can be used ; the following table can help the designer.
Component R1, R3 R2, R4 R5, R6 C1, C2 Recommended Value 1.2k 18k 1 2.2 F 22F 220F 0.1 F 1000F to 2200 F Purpose Close Loop Gain Setting (1) Frequency Stability Input DC Decoupling Larger than Increase of Gain Decrease of Gain Danger of Oscillation at High Frequency with Inductive Load High Turn-on Delay Smaller than Decrease of Gain Increase of Gain

C3 C6, C7 C8, C9 C10, C11

Ripple Rejection Feedback Input DC Decoupling Frenquency Stability Output DC Decoupling

Better SVR. Increase of the Switch-on Time

High Turn-on Pop. Higher Low Frequency Cut-off. Increase of Noise Degradation of SVR

Danger of Oscillation Higher Low-frequency Cut-off

(1) The closed loop gain must be higher than 26dB.

BUILD-IN PROTECTION SYSTEMS THERMAL SHUT-DOWN The presence of a thermal limiting circuit offers the following advantages: 1) an averload on the output (even if it is pe rman e nt ), o r an e xce ssive a mb ien t temperature can be easily withstood. 2) the heatsink can have a smaller factor of safety compared with that of a conventional circuit. There is no device damage in the case of excessive junction temperature : all that happens is that Po (and therefore Ptot) and Io are reduced.

The maximum allowable power dissipation depends upon the size of the external heatsink (i.e. its thermal resistance); Figure 18 shows this dissipable power as a function of ambient temperature for different thermal resistance.

Short circuit (AC Conditions). The TDA2009A can withstand an accidentalshort circuit from the output and ground made by a wrong connection during normal play operation.
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MOUNTING INSTRUCTIONS The power dissipated in the circuit must be removed by adding an external heatsink. Thanks to the MULTIWATT package attaching Figure 18 : Maximum Allowable Power Dissipation versus Ambient Temperature the heatsink is very simple, a screw or a compression spring (clip) being sufficient. Between the heatsinkand the package it is better to insert a layer of silicon grease, to optimize the thermal contact ; no electrical isolation is needed between the two Figure 19 : Output Power versus Case Temperature

Figure 20 : Output Power and Drain Current versus Case Temperature

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MULTIWATT11 PACKAGE MECHANICAL DATA
DIM. A B C D E F G G1 H1 H2 L L1 L2 L3 L4 L7 M M1 S S1 Dia1 MIN. mm TYP. MAX. 5 2.65 1.6 0.55 0.95 1.95 17.25 20.2 22.5 22.5 18.1 17.75 10.9 2.9 4.85 5.43 2.6 2.6 3.85 MIN. inch TYP. MAX. 0.197 0.104 0.063 0.022 0.037 0.077 0.679 0.795 0.886 0.886 0.713 0.699 0.429 0.114 0.191 0.214 0.102 0.102 0.152

1 0.49 0.88 1.45 16.75 19.6 21.9 21.7 17.4 17.25 10.3 2.65 4.25 4.73 1.9 1.9 3.65 0.019 0.035 0.057 0.659 0.772 0.862 0.854 0.685 0.679 0.406 0.104 0.167 0.186 0.075 0.075 0.144

0.039

1.7 17

0.067 0.669

22.2 22.1 17.5 10.7 4.55 5.08

0.874 0.87 0.689 0.421 0.179 0.200

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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components inlife support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.

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