Resonance Converter
Resonance Converter
Resonance Converter
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While half-bridge power stages have commonly been used for isolated, medium-power applications,
converters with high-voltage inputs are often designed with resonant switching to achieve higher efficiency,
an improvement that comes with added complexity but that nevertheless offers several performance
benefits. This topic provides detailed information on designing a resonant half-bridge converter that uses
two inductors (LL) and a capacitor (C), known as an LLC configuration. This topic also introduces a
unique analysis tool called first harmonic approximation (FHA) for controlling frequency modulation.
FHA is used to define circuit parameters and predict performance, which is then verified through
comprehensive laboratory measurements.
IntroductIon
Lr
Cr
Lr
RL
a. Series resonant
converter.
Cr
RL
b. Parallel resonant
converter.
3-1
1
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Topic 3
AbstrAct
Topic 3
Lr
Cr2
Lr
RL
a. LCC configuration.
Cr
Lm
RL
b. LLC configuration.
Texas Instruments
Cr1
3-2
2
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Square-Wave Generator
Resonant Circuit
Rectifiers for
DC Output
Q1
Vin = +
VDC
Cr
Vsq
Q2
Ir
n:1:1
Lr
Cr
D1
Vo
Lr
I m Ios
Ir
+
Io
+
Vso Lm
Co
Vsq
Vso
Lm
RL
RL
Vsq
Vso
D2
a. Typical configuration.
A. Configuration
Texas Instruments
B. Operation
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Topic 3
f0 =
(1)
Topic 3
1
.
2 (L r + L m )Cr
(2)
Vg_Q1
Vg_Q1
Vg_Q1
Vg_Q2
Vg_Q2
Vg_Q2
Vsq
Vsq
Vsq
0
Ir
Ir
Im
0
Ir
Im
Is
Is
D1
D2
Is
D1
D2
D1
0
t0
t1 t2
time, t
t3 t4
Im
D2
0
t0
a. At f0 .
t1 t2
time, t
b. Below f0 .
t3 t4
t0
t1 t2
time, t
t3 t4
c. Above f0 .
3-4
4
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Texas Instruments
3-5
5
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Topic 3
Cr
Cr
Lr
I m Ios
Ir
Ir
+
Vsq
Vso
Lm
RL
Vge
Vsq
Lr
Lm
Re
Im
I oe
+
Voe
Vso
Topic 3
SLUP263
2
VDC .
Im =
(3)
(4)
2
I r = I 2m + Ioe
.
4
n Vo sin(2fsw t V ), (5)
2 2
n Vo .
(6)
M g _DC =
1
Io .
n
2 2
(7)
M g _DC M g _ sw =
(8)
Voe 8 n 2 Vo 8 n 2
= 2
= 2 RL.
Ioe
Io
(9)
M g _DC =
Texas Instruments
(15)
Vso
Vsq
(16)
The AC voltage ratio, Mg_AC, can be approximated by using the fundamental components, Vge
and Voe, to respectively replace Vsq and Vso in
Equation (16):
n Vo
n Vo
=
Vin / 2
VDC / 2
(14)
D. Voltage-Gain Function
(13)
Voe
2 2 n Vo
.
=
L m
L m
(12)
1
, X Lr = L r , and X Lm = L m .
C r
n Vo
M g _ sw
Vin /2
V
V
= so M g _ AC = oe
Vsq
Vge
(17)
(10)
3-7
7
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Topic 3
vge (t) =
(11)
= sw = 2fsw .
Ln =
Qe =
(18)
( jL m ) || R e
Topic 3
( jL m ) || R e + jL r +
1
j C r
Mg =
Texas Instruments
L n f n2
[(L n + 1) f n2 1] + j[(f n2 1) f n Qe L n ]
. (23)
1 V
1 V
Vo = M g in = M g (f n , L n ,Qe ) DC , (24)
n 2
n
2
where Vin = VDC.
(19)
(22)
fn =
L r /Cr
.
Re
where j = 1.
Equation (18) depicts a connection from the
input voltage (Vin) to the output voltage (Vo)
established in relation to Mg with LLC-circuit
parameters. Although this expression is only
approximately correct, in practice it is close
enough to the vicinity of series resonance.
Accepting the approximation as accurate allows
Equation (19) to be written:
1 V
Vo = M g in .
n 2
(21)
jX Lm || R e
Voe
=
Vge ( jX Lm || R e ) + j(X Lr X Cr )
Lm
.
Lr
(20)
3-8
8
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2
Q e = 0.1
Q e = 0.2
Q e = 0.5
Q e = 0.8
Qe = 1
Qe = 2
Qe = 5
Qe = 8
Q e = 10
2 = 0
1.6
1.2
1
1.6
1.4
Q e = 0.5
1
0.8
0.8
Q e = 0.1
0.6
Q e = 0.1
0.6
0.4
0.4
0.2
0
0.1
1.2
0.2
Q e = 0.5
1 Q e = 10
Normalized Frequency, fn
Q e = 0.5
0
0.1
10
1 Q e = 10
Normalized Frequency, fn
b. Ln = 5.
a. Ln = 1.
2
2
Q e = 0.1
Q e = 0.2
Q e = 0.5
Q e = 0.8
Qe = 1
Qe = 2
Qe = 5
Qe = 8
Q e = 10
2 = 0
Q e = 0.1
1.6
Gain, Mg
1.4
1.2
Q e = 0.5
Q e = 0.1
Q e = 0.2
Q e = 0.5
Q e = 0.8
Qe = 1
Qe = 2
Qe = 5
Qe = 8
Q e = 10
2 = 0
1.8
Q e = 0.1
1.6
1.4
Gain, Mg
1.8
1
0.8
1.2
1
Q e = 0.5
0.8
Q e = 0.1
Q e = 0.1
0.6
0.6
0.4
0.4
Q e = 0.5
Q e = 0.5
0.2
0
0.1
10
Topic 3
Gain, Mg
1.4
Q e = 0.1
Q e = 0.2
Q e = 0.5
Q e = 0.8
Qe = 1
Qe = 2
Qe = 5
Qe = 8
Q e = 10
2 = 0
1.8
Gain, Mg
1.8
0.2
1 Q e = 10
Normalized Frequency, fn
0
0.1
10
c. Ln = 10.
1 Q e = 10
Normalized Frequency, fn
10
d. Ln = 20.
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3-9
9
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Topic 3
Texas Instruments
3-10
10
(25)
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2
1.8
Qe = 0
1.6
Mg_max
1.4
Gain, Mg
a0
1
Mg_min
a1
Curve 1
a4
Cu
0.6
(Qe = 0)
rv
e
2
0.4
(Q
Cu
rve
=m
ax)
0.2
Curv
e4
fn_min
10
fn_max
Normalized Frequency, fn
1.4
a3
a2
1.2
Q e = max
a0
1
n x Vo_min
Mg_min =
Vin_max /2
0.8
a1
a4
0.6
Qe = 0
1
Q e = max
fn_min
Normalized Frequency, fn
fn_max
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Topic 3
0
0.1
Texas Instruments
1.2
0.8
Gain, Mg
Obviously, in the vicinity is a loose designation; but, as stated before in the discussion of the
FHA concept, if a pure sinusoidal current flowing
through the resonant circuit is assumed, and if the
circuit is made to operate at the exact location of
f0, then the design result is accurate. This can also
be verified easily by a bench test or a computer
simulation, but so far there is no verification in
theory. A potential insight into such verification
can be made through Equation (19). Assigning a
value of 1 to Mg in Equation (19) as an indication
of operation at fn = 1 will remove the approximations made to Equation (17). A precise relationship
is then achieved between the DC input and DC
output as described by Equation (15).
A design that operates only at f0 certainly
cannot be made, but when it includes operating
frequencies away from f0, it starts to show errors
when compared with bench-test measurements. So
the common understanding in an FHA design
approach is that it can help to create an initial
design, with all design variables retaining their
clear physical concepts and meanings, which is
important in order for designers to understand the
behavior of the LLC converter. However, it should
be expected that some bench testing to optimize
and finalize the design may be necessary. This
could be an iterative process, but computer-based
circuit simulation will save iteration cycles. As a
matter of fact, computer simulation plays an
important role in LLC-converter design after an
initial design is made with the FHA approach.
a2
a3
Topic 3
(26a)
(26b)
where
M g _ min =
Texas Instruments
n Vo _ min
,
Vin _ max /2
(27)
3-12
12
M g _ max =
n Vo _ max
,
Vin _ min /2
(28)
and
Mg _ =
Ln
.
Ln + 1
(29)
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Overload Current
In the example, the recommended design area
in Fig. 7 includes an overload because Qe_max was
defined to include a value for it. As stated earlier,
any further increase in load causes Curve 2 to
move towards Curve 3 or beyond, which places
the design outside of the design area and towards
the condition of a short circuit.
Load Short Circuit
Since a load short circuit causes a potentially
excessive amount of current in the converter
circuit, it is necessary to examine the gain plot of a
load short circuit to know what happens and how
to deal with it. The corresponding gain plot is
shown by Curve 4 in Fig. 7a. fc0 will become f0
when Lm is bypassed by a load short circuit, and
this defines Curve 4 as the gain shape with a
shorted output.
Curve 4 provides insight into possible solutions
for protecting the LLC converter. One possibility
is to increase the switching frequency to reduce
the gain. Based on Figs. 6 and 7, if the switching
frequency is increased to more than two times the
series resonant frequency (f0), the gain will be
reduced to below 10%. If the frequency can be
pulled up to ten times f0, the gain becomes
practically zero. From Equation (25) it can be seen
Texas Instruments
3-13
13
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Topic 3
(30a)
+
Cr
Lr
Ir
+
Vg
Vin
Lm
Ir
+
Vds_Q2
Q2
n:1:1
Lr
Ids_Q1
Vsq
Vg
Vge
+
Vds_Q1
Q1
Ids_Q2
Lm
Re
Im
I oe
+
Voe
Z in
Im
a. Input impedance.
Cr
2
Qe = 0
Q e = 0.2
Q e = 0.8
Qe = 1
Qe = 2
Q e = 10
Qe = 0
1.8
1.6
Vg_Q1
1.4
Capacitive
Region
Q1 Turns Off
Vg_Q2
Gain, Mg
Topic 3
Q2 Turns On
Vsq
Vds_Q2 = 0
Inductive
Region
1.2
1
Qe = 0
0.8
0
0.6
Ir
Im
0.4
Q e = 10
0
0.2
tdead
t0
0
0.1
t1 t2
time, t
t3 t4
10
b. Gain regions.
Frequency
Boundary
Normalized Frequency, fn
1
3-14
14
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Vg_Q1
Q1
Vg
Vin
Vg_Q2
Cds
Vsq
Q2
Vg
n:1:1
Lr
Ir
Cds
Im
Vin
Vds_Q2 = 0
I m_max
0
Q2: Cds Discharge,
Body Diode
Turns On
Ir
Cr
Q2 Turns On
Vsq
Ceq
Lm
Q1 Turns Off
Im
Ceq
0
Cr
(Short)
b. Equivalent circuit.
tdead
t0
t1 t2
time, t
t3 t4
(30b)
f = f c0
(31)
Texas Instruments
3-15
15
(32a)
(32b)
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Topic 3
Topic 3
3-16
16
1.5
Gain, Mg
1
With C w
0.5
Without C w
fCw
0
0.1
1
Normalized Frequency, fn
10
Selecting Ln and Qe
Recall that in order to achieve line and load
regulation across the operation range, the design
must meet the conditions of Equation (26), which
defines two horizontal lines crossing over two
gain curves within frequency limits. Designing
circuit parameters to select Ln and Qe values that
satisfy Equation (26) will be discussed next.
How Are the Proper Ln and Qe Selected?
First, recall the discussion on Fig. 7. The most
critical point for normal operation is the point a3.
This point corresponds to Qe_max, determined by
the maximum load current. This point should be
designed to avoid operation that would enter the
capacitive region. Since a required maximum gain
(Mg _max) can be determined from Equation (28),
Mg _max can be plotted to the gain curves to obtain
point a3 by finding the cross point between the
Mg _max line and the gain curves. Because the gain
curves are dependent on Ln and Qe, several gain
curves may need to be drawn to find a proper point
a3. This is certainly one way to make the initial
selection of Ln and Qe, but it is a difficult way and
most likely will require some wild guess.
A more desirable approach is to create a
common tool to represent the gain curves that can
be shared and reused by different designs. Since
the attainable peak gain (Mg _ap) corresponding to
Qe_max is the highest gain of concern for a design,
gain-curve plots can be created beforehand to show
Mg _ap with different values of Ln and Qe . Then Ln
and Qe can be selected to achieve Mg _ap > Mg_max
based on a common toolthe Mg _ap curves. How
this method is used will be described after a
discussion of how the Mg _ap curves are obtained.
How Are the Mg _ap Curves Obtained?
The created Mg_ap curves are shown in Fig. 12a.
The horizontal axis is Qe and the vertical axis is
Mg _ap with respect to a family of fixed values for
Ln. Fig. 12b is used to illustrate how Fig. 12a is
formed.
Texas Instruments
3-17
17
2.6
Ln = 3.0
2.4
Ln = 3.5 by
Interpolation
Mg_ap = 1.56
Qe = 0.45
2.2
2.0
1.8
Ln = 1.5
1.6
Ln = 5
Mg_ap = 1.2
Qe = 0.5
1.4
1.2
1.0
0.15
0.35
0.55
0.75
0.95
Quality Factor, Q e
1.15
Topic 3
Mg = 1
Ln = 1.5
Ln = 2.0
Ln = 3.0
Ln = 4.0
Ln = 5.0
Ln = 6.0
Ln = 8.0
Ln = 9.0
2.8
a. Peak-gain curves.
1.8
1.6
Ln = 5
Mg_ap = 1.2
Qe = 0.5
1.4
1.2
1.0
0.15
0.35
0.55
Quality Factor, Q e
0.75
1.4
1.2
Qe = 0.5
Ln = 5
Mg_max = 1.2
1
Gain, Mg
(33)
n = Mg
3.0
0.8
0.6
0.4
0.2
0
0.1
1
Normalized Frequency, fn
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Topic 3
Texas Instruments
3-18
18
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(34)
fsw = f 0
2.0
(65, 1.90)
Bench Test
Measurements
(80, 1.58)
Plot Based on
Equation 18
(60, 1.57)
1.4
(55, 1.27)
Topic 3
(100, 1.21)
(135, 0.99)
(170, 0.87)
(40, 0.70)
(200, 0.78)
(240, 0.72)
0.6
(400, 0.56)
(30, 0.51)
f0 = 135 kHz
0.0
10
3-19
19
100
Frequency, fsw (kHz)
1000
Texas Instruments
1
2fsw R e Qe
Gain, Mg
2.6
Ln = 1.5
2.4
2.2
Mg_ap = 1.65
Qe = 0.5
Ln = 2.0
1.8
1.6
Ln = 3.0
1.4
Ln = 5.0
1.2
Ln = 9.0
1
0.15
0.25
0.35
0.55
0.75
0.95
1.15
0.45
0.65
0.85
1.05
1.25
Quality Factor, Q e
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Lr =
1
(2fsw ) 2 Cr
(35)
fsw = f 0
(36)
Lm = Ln Lr
Converter Specifications
Vin
2Vo
3.0
Ln = 1.5
Ln = 2.0
Ln = 3.0
Ln = 4.0
Ln = 5.0
Ln = 6.0
Ln = 8.0
Ln = 9.0
2.6
Ln = 3.0
2.4
Ln = 3.5 by
Interpolation
Mg_ap = 1.56
Qe = 0.45
2.2
2.0
M g_min
n Vo_min
Vin_max / 2
M g_max
n Vo_max
Vin_min / 2
1.8
Ln = 1.5
1.6
Ln = 5
Mg_ap = 1.2
Qe = 0.5
1.4
1.2
1.0
0.15
0.35
0.55
0.75
0.95
Quality Factor, Qe
1.15
Magnetizing Inductance
L m Ln Lr
Resonant Inductor
Choose L n and Q e
Lr
2
(2fsw) Cr
Change L n and Q e
Resonant Capacitor
Check Mg and fn
Against Graph
No
Cr
Ln = 3.5
1.9
Qe = 0
1.7
fn_min = 0.65
1.5
Mg_max = 1.3
Q e = 0.47
Gain, Mg
Topic 3
2.8
1.3
Mg_min = 0.99
1.1
Are Values
Within
Limits?
Mg_max
Mg_min
fn_max
fn_min
1
2 fsw R eQe
Yes
Calculate R e
2
2
V2
Re 8 2n R L 8 2n o
Pout
0.9
Q e = 0.52
0.7
fn_max = 1.02
0.5
0
0.5
1
Normalized Frequency, fn
1.5
Texas Instruments
3-20
20
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efficiency-boosting features and high-level protection features that provide a cost-effective solution.
The step-by-step design demonstration will focus
mainly on the power stage. For those interested in
how to use and program the UCC25600, please
refer to its data sheet (Reference [1]).
B. Design Steps
1. Determine Transformer Turns Ratio (n)
The transformer turns ratio is determined by
Equation (33):
Mg = 1
DT1
n=
Q1
Lr
T1
n:1:1
Cin
Vo
Ir
Io
Lm
Q2
Co
+
RL
Cr
ID1
D1
ID2
D2
U1
8
3
GD1
OC
Vs
UCC25600
5
R o1
RT1
2
GD 2
RT
U2
7
1
VCC
DT
RT2
Cf
6
Rf1
4
GND
SS
R DT
CB
R o2
C SS
U3
Texas Instruments
3-21
21
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Topic 3
n = Mg
M g _ max
n (Vo _ min + VF )
Vin _ max /2
Re =
8 n2
2
Vo 8 162 12 V
= 99.7 .
Io
25 A
2
At 110% overload,
Re =
Topic 3
= 1.18
In these calculations, 1% is used to adjust
output voltage from the line and load regulation.
VF = 0.7 V is assumed for the secondary-side
diodes forward-voltage drop. Vloss = 1.05 V is
assumed for the voltage drop due to power losses.
If the efficiency is assumed to be 92% (> 90% as
required by the specifications), then 8% of the
total power would be power losses. If all losses are
referred to the output voltage, then 8% loss at 25 A
would drop the output voltage to
300 W
8%
92%
= 1.05 V.
25 A
8 n2
2
3. Select Ln and Qe
From Fig. 12a, if the values Ln = 3.5 and Qe = 0.45
are selected, the corresponding Mg _ap = 1.56,
which is greater than Mg _max = 1.30. A curve for
Ln = 3.5 is not shown in Fig. 12a, but it can be
obtained by interpolating the curves of Ln = 3 and
Ln = 4.
1
2 Qe f 0 R e
1
2 0.45 130 103 Hz 99.7
= 27.3 nF 12 nF 2 + 3.3 nF
Lr =
=
Vo 8 162
12 V
= 90.6 .
2
Io
25 A 110%
1
(2 f 0 ) 2 Cr
1
(2130 10 Hz) 2 27.3 109 F
3
= 54.9 H 60 H
L m = L n L r = 3.5 60 = 210 H
6. Verify the Resonant-Circuit Design
The design parameters are as follows:
Series resonant frequency:
f0 =
=
1
2 L r Cr
1
2 60 106 H 27.3 109 F
= 124.4 kHz
Texas Instruments
3-22
22
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Inductance ratio:
L
210 H
= 3.5
Ln = m =
Lr
60 H
Qe = 0
1.7
fn_min = 0.65
1.5
Mg_max = 1.3
Q e = 0.47
Gain, Mg
Qe =
Ln = 3.5
1.9
L r /Cr
Re
1.3
Mg_min = 0.99
1.1
99.7
= 0.47
0.9
Q e = 0.52
0.7
fn_max = 1.02
L r /Cr
0.5
0
Re
(60 106 H) / (27.3 10
90.6
F)
= 0.52
2 2
Io
25 A 110%
= 1.11
= 1.91 A
n
16
1.5
Ioe =
0.5
1
Normalized Frequency, fn
nVo
L m
2 Ioe _ s
2 30.6 A
=
= 21.6 A.
2
2
16 12 V
2 Ioe _ s
2 30.6 A
=
= 13.8 A.
= 1.63 A
Texas Instruments
3-23
23
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Topic 3
the Transformer
The transformer can be built or purchased from a
catalog. The specifications for this example are:
Turns ratio (n): 16
Primary terminal voltage: 450 VAC
Primary windings rated current, Iwp: 2.6 A
Secondary terminal voltage: 36 VAC
Secondary windings rated current, Iws: 21.6 A
(center-tapped configuration)
Frequency at no load: 127 kHz
Frequency at full load: 80 kHz
Insulation between primary and secondary sides:
IEC60950 reinforced insulation
Topic 3
10. Select
12 nF,
300 V,
100 kHz
500
6.2 nF
100
50
12 nF
33 nF
10
10 k
3-24
24
100 k
1M
Frequency, f (Hz)
10 M
VCr = X Cr I r =
=
Texas Instruments
1000
9. Select
Ir
Cr
2.6 A
= 187.9 V
RMS voltage:
2
VCr _ RMS
Vin _ max
2
=
+ VCr
2
405 V
2
=
+ (187.9 V) = 276.3 V
2
Corresponding peak voltage:
VCr _ peak =
=
Vin _ max
2
405 V
2
+ 2 VCr
+ 2 187.9 V = 467.4 V
SLUP263
= 0.901
n Vo
2 fsw L m
fsw =
127 kHz
16 12 V
2127 103 210 106
= 1.03 A,
then, to verify Equation (32a),
= 286.5 10
Vin _ max /2
2
n
(405 V)/2
2 = 25 V 30 V.
16
2 Ioe _ s
2 30.6 A
=
= 13.8 A.
2 2
I Co =
Io Io2 =
2 2
joules,
and
Io .
2
1 Io
8
1
(2Ceq ) Vin2 = 200 1012 F (405 V) 2
2
= 32.8 106 joules.
Texas Instruments
1
(210 106 H + 60 106 H) ( 2 1.03 A) 2
2
6
1
1
(L m + L r ) I 2m _ peak (2Ceq ) Vin2
2
2
I rect = Isw =
1
(L + L r ) I 2m _ peak
2 m
=
SLUP263
Topic 3
Each MOSFET conducts half of the resonant networks current in steady state after the resonant
capacitors voltage has been established. However,
during the initial start-up and transient, the current
in each MOSFET can be as high as the resonant
current (Ir) with a 110% overload:
Topic 3
parallel are often used and may offer a lower profile. Aluminum solid capacitors with conductivepolymer technology have a high current rating and
a low equivalent series resistance (ESR), making
them a good choice.
The ripple voltage is a function of the amount
of AC current that flows in and out of the capacitors
with each switching cycle, multiplied by the
capacitors ESR. Since all electric current, including the loads DC current, can be assumed to flow
in and out of the filter capacitors, this is a very
good estimate of the ripple voltage. To meet the
specification for a 120-mV ripple voltage, the maximum ESR should be
ESR max =
Vo _ pk-pk
Vo _ pk-pk
=
I rect _ peak
4 Io 2
vI. concLusIon
0.12 V
= 3.05 m.
25 A
2
Texas Instruments
3-26
26
vII. AcknowLedgments
The author would like to express sincere gratitude to Richard Garvey, Bob Mammano, Bing Lu,
and Bob Neidorff for their valuable discussions
during the preparation of this topic.
vIII. references
[1] 8-Pin High-Performance Resonant Mode
Controller, UCC25600 Data Sheet, TI
Literature No. SLUS846
[2] Using the UCC25600EVM, Users Guide,
TI Literature No. SLUU361
[3] Bob Mammano, Resonant Mode Converter
Topologies, Unitrode Design Seminar, 1985,
TI Literature No. SLUP085
[4] Bing Lu et al., Optimal design methodology
for LLC resonant converter, Applied Power
Electronics Conference and Exposition
(APEC) 2006, pp. 533538.
[5] S. De Simone, et al., Design-oriented steadystate analysis of LLC resonant converters
based on first-harmonic approximation,
SLUP263
[7] Thomas Duerbaum, First harmonic approximation including design constraints, Twentieth
International Telecommunications Energy
Conference (INTELEC) 1998, pp. 321328.
[8] R.L. Steigerwald, A comparison of half
bridge resonant converter topologies, IEEE
Transactions on Power Electronics, Vol. 3,
No. 2, pp. 174182, April 1988.
Input Voltage,
Vin
85
Topic 3
Efficiency (%)
95
90 mV
405 V
390 V
375 V
75
65
1
10
15
Load Current (A)
20
25
Time (5 s/div)
a. Efficiency.
VCr
(200 V/div)
1
3
Ir
(1.2 A/div)
(200 V/div)
VL
r
VLm
(200 V/div)
VCr
(100 V/div)
Vds_Q2
(500 V/div)
2
Time (5 s/div)
Time (1 s/div)
3-27
27
SLUP263
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