SP8K1

SP8K1
Transistors
Switching (30V, 5.0A)

SP8K1
zExternal dimensions (Unit : mm)
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
SOP8
5.00.2
(4)
Max.1.75
1.50.1
0.15
0.50.1
6.00.3
3.90.15
(5)
1.27
0.20.1
0.40.1
0.1
Each lead has same dimensions
zEquivalent circuit
zAbsolute maximum ratings (Ta=25C)

It is the same ratings for the Tr. 1 and Tr. 2.
Parameter
Drain-source voltage
Gate-source voltage
Source current
(Body diode)
(1)
zStructure
Silicon N-channel
MOS FET
Drain current
(8)
zApplication
Power switching, DC / DC converter.
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation

Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
(8)
Limits
30
20
5.0
20
1.6
6.4
2
150
55 to +150
Unit
V
V
A
A
A
A
W
C
C
(7)
(5)
(6)
(1) (2) (3) (4)
(1)
(2)
(3)
1 ESD PROTECTION DIODE

2 BODY DIODE
1 Pw 10s, Duty cycle 1%

2 MOUNTED ON A CERAMIC BOARD.
(8) (7) (6) (5)
(4)
(1) Tr1 Source

(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
A protection diode is included between the gate and

the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25C)

Parameter
Channel to ambient
Symbol
Rth (ch-a)
Limits
62.5
Unit
C / W
MOUNTED ON A CERAMIC BOARD.
1/3
SP8K1
Transistors
zElectrical characteristics (Ta=25C)
It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter
Symbol
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on)
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
30
1.0
3.0
Typ.
Max.
36
52
58
230
80
50
6
8
22
5
3.9
1.1
1.4
10
1
2.5
51
73
82
5.5
Unit
A
V
A
V
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=20V, VDS=0V
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VDS=10V, ID=1mA
ID=5.0A, VGS=10V
ID=5.0A, VGS=4.5V
ID=5.0A, VGS=4V
ID=5.0A, VDS=10V
VDS=10V
VGS=0V
f=1MHz
ID=2.5A, VDD 15V
VGS=10V
RL=6
RGS=10
VDD 15V
VGS=5V
ID=5.0A
Pulsed
zBody diode characteristics (Source-Drain Characteristics) (Ta=25C)

It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter
Forward voltage
Symbol
VSD
Min.
Typ.
Max.
1.2
Unit
V
Conditions
IS=6.4A, VGS=0V
Pulsed
2/3
SP8K1
Transistors
zElectrical characteristic curves
10
10000
Ciss
100
Coss
Crss
Ta=25C
VDD=15V
VGS=10V
RG=10
Pulsed
1000
tf
100
td (off)
GATE-SOURCE VOLTAGE : VGS (V)
Ta=25C
f=1MHz
VGS=0V
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
1000
tr
10
td (on)
1
10
100
0.1
DRAIN-SOURCE VOLTAGE : VDS (V)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (m)
DRAIN CURRENT : ID (A)
Ta=125C
Ta=75C
Ta=25C
Ta= 25C
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1
0
10
10
250
ID=5A
ID=2.5A
150
100
50
0
10
12
1000
14
100
10
1
0.1
VGS=0V
Pulsed
10
Ta=125C
Ta=75C
Ta=25C
Ta= 25C
0.1
0.01
0.0
16
VGS=4.5V
Pulsed
Ta=125C
Ta=75C
Ta=25C
Ta= 25C
Fig.3 Dynamic Input Characteristics
10
200
TOTAL GATE CHARGE : Qg (nC)
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.

Source-Drain Voltage
Fig.5 Static Drain-Source

On-State Resistance vs.
Gate-Source Voltage
STATIC DRAIN-SOURCE
STATIC DRAIN-SOURCE
VGS=10V
Pulsed
100
1
0.1
Ta=25C
Pulsed
Fig.4 Typical Transfer Characteristics
Ta=125C
Ta=75C
Ta=25C
Ta= 25C
10
300
1000
Fig.2 Switching Characteristics
VDS=10V
Pulsed
Fig.1 Typical Capacitance

vs. Drain-Source Voltage
10
SOURCE CURRENT : Is (A)
0.1
1
0.01
STATIC DRAIN-SOURCE
10
0.01
Ta=25C
9 VDD=15V
ID=5A
8
RG=10
7 Pulsed
1000
VGS=4V
Pulsed
Ta=125C
Ta=75C
Ta=25C
Ta= 25C
100
10
1
0.1

On-State Resistance
vs. Drain Current ()

On-State Resistance

On-State Resistance
10
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

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SP8K1

Switching (30V, 5.0A)

zAbsolute maximum ratings (Ta=25C)

Total power dissipation

(1) (2) (3) (4)

1 ESD PROTECTION DIODE

1 Pw 10s, Duty cycle 1%

(8) (7) (6) (5)

(1) Tr1 Source

A protection diode is included between the gate and

zThermal resistance (Ta=25C)

MOUNTED ON A CERAMIC BOARD.

zBody diode characteristics (Source-Drain Characteristics) (Ta=25C)

GATE-SOURCE VOLTAGE : VGS (V)

SWITCHING TIME : t (ns)

DRAIN-SOURCE VOLTAGE : VDS (V)

DRAIN CURRENT : ID (A)

Fig.3 Dynamic Input Characteristics

TOTAL GATE CHARGE : Qg (nC)

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.6 Source Current vs.

Fig.5 Static Drain-Source

GATE-SOURCE VOLTAGE : VGS (V)

Fig.4 Typical Transfer Characteristics

GATE-SOURCE VOLTAGE : VGS (V)

Fig.2 Switching Characteristics

DRAIN CURRENT : ID (A)

Fig.1 Typical Capacitance

SOURCE CURRENT : Is (A)

DRAIN CURRENT : ID (A)

DRAIN CURRENT : ID (A)

DRAIN CURRENT : ID (A)

Fig.7 Static Drain-Source

Fig.8 Static Drain-Source

Fig.9 Static Drain-Source

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