JApplPhys 95 5498 PDF
JApplPhys 95 5498 PDF
JApplPhys 95 5498 PDF
15 MAY 2004
S. Adachid)
Department of Applied Physics, Hokkaido University, Kitaku, Sapporo 060-8628, Japan
SF. Chichibue)
Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba,
1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
G. Cantwell
Director of Research Zn-Technology, Inc. 910 Columbia St. Brea, California 92821
I. INTRODUCTION
The intrinsic exciton transitions in hexagonal semiconductors show interesting properties. The optical properties
near the band gap are determined by three exciton species.
They arise from the threefold splitting of the highest valence
bands due to the crystal-field and spin-orbit interactions. The
three valence bands are called A-, B-, and C-valence bands
and the resultant excitons are A, B, and C excitons. For typical hexagonal semiconductors such as CdS and GaN, it is
known that the order of the valence bands is A- 9 , B- 7 ,
and C- 7 . 15
In zinc oxide ZnO, there is a consensus that the
C-valence band has 7 symmetry. The valence bands with
symmetry of 7 gives rise to a term linear in k in the dispersion relation for wave vector perpendicular to the c axis, i.e.,
kc. The k-linear term is known to lead to an extra dispersion curve in the excitonic polariton dispersion curve accorda
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C-exciton manifold in a bulk ZnO. FWM signals were measured from a 110 surface. From the dependence of FWM
signals on the excitation wavelength and the spectral decomposition analysis of them, we have found that the coupling
between the 1 state and 5L state leads to the three-branch
excitonic polariton dispersion for kc and E c but the oscillator strength transfer is small. The energy separation between the lower polariton branch and the extra one due to the
k-linear term has been found to be 3.5 meV. The binding
energy of the CC biexciton, XX CC , is found to be 1.4 meV.
II. EXPERIMENT
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Hazu et al.
3.4226
3.4261
3.4302
3.4327
* X LP , XX EPLP
* X EP
X LPG, XX LPLP
* X LP , XX EPEP
* X EP , XX EPUP
* X UP
X EPG, XX LPEP
* X LP
XX EPEP
* X EP , XX UPUP
* X UP
X UPG, XX EPUP
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IV. SUMMARY
ACKNOWLEDGMENT
3.4212
3.4180
3.4125
3.4111
X CCX LP
* X UP , XX LPLP
* X EP , XX CCX EP , XX LPEP
* X UP
XX EPEP
* X UP
XX LPLP
X CCX UP
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