Dse STR A6000m
Dse STR A6000m
Dse STR A6000m
Description
Applications:
Package: DIP8
Not to scale
C1
PC1
P
C51
D1
RB
S
D2
D/ST D/ST
C4
NC
R55
R52
U51
VCC
C2
R51
C53
C52 R53
R2
VOUT
R54
R1
C5
RA
L51
D51
T1
R56
U1
GND
STR-A6000
CCR
Dumper snubber
RC
STR-A6000HD-DS
ROCP
C10
C3
PC 1
C9
January 8, 2013
STR-A6000M
Series
Selection Guide
Power MOSFET
Part Number
VDSS(min)
(V)
RDS(ON)(max)
()
STR-A6051M
650
3.95
30
21
20
16
STR-A6052M
650
2.8
35
25
23
19
STR-A6053M
650
1.9
41
29
26
22
STR-A6079M
800
19.2
13
9
8
6
*The listed output power is based on the thermal ratings, and the peak output power can be 120% to 140% of the value stated
here. At low output voltage and short duty cycle, the output power may be less than the value stated here.
The polarity value for current specifies a sink as "+," and a source as , referencing the IC.
Symbol
Notes
Pins
STR-A6051M
Drain Peak Current1
IDPEAK
STR-A6052M
STR-A6053M
Single pulse
81
STR-A6079M
Avalanche
Energy2
STR-A6051M
STR-A6052M
EAS
STR-A6053M
STR-A6079M
Rating
Unit
2.5
3.0
4.0
1.2
47
mJ
62
mJ
86
mJ
mJ
2 to 6
81
VOCP
13
VCC
53
32
VFB
43
0.3 to 14
IFB
43
1.0
mA
BR Pin Voltage
VBR
23
0.3 to 7
23
1.0
mA
81
1.35
IBR
PD1
PD2
53
1.2
TOP
20 to 125
Storage Temperature
Tstg
40 to 125
Channel Temperature
Tch
150
1Refer
2
January 8, 2013
STR-A6000M
Series
Symbol
Test Conditions
VCC(ON)
Voltage1
VCC(OFF)
ICC(ON)
VCC = 12 V
VST(ON)
Startup Current
ISTARTUP
VCC = 13.5 V
VCC(BIAS)
ICC = 100 A
fOSC(AVG)
Pins
Min.
Typ.
Max.
Unit
53
13.8
15.3
16.8
53
7.3
8.1
8.9
53
2.5
mA
53
38
53
3.7
2.5
1.5
mA
53
8.5
9.5
10.5
83
60
67
74
kHz
kHz
83
DMAX
83
77
83
89
tON(MIN)
540
ns
tBW
340
ns
DPC
20
mV/s
DDPC
36
VOCP(L)
13
0.70
0.78
0.86
VOCP(H)
VCC = 32 V
13
0.81
0.9
0.99
IFB(MAX)
VCC = 12 V
43
340
230
150
IFB(MIN)
43
30
15
VFB(STB)
43
0.85
0.95
1.05
VFB(OLP)
43
7.3
8.1
8.9
tOLP
43
54
68
82
ms
ICC(OLP)
300
600
11
12.8
14
VBR(IN)
VCC = 32 V
23
5.2
5.6
VCC = 32 V
23
4.45
4.8
5.15
VBR(CLAMP) VCC = 32 V
23
6.4
23
0.3
0.48
0.7
53
26
29
32
53
700
135
VBR(DIS)
VCC(OVP)
ICC(LATCH)
Tj(TSD)
STR-A6000M-DS
53
43
VBR(OUT)
1V
CC(BIAS) > VCC(OFF) always.
2A latch circuit is a circuit operated
VCC = 12 V
VFB(CLAMP)
VCC = 32 V
VCC = 9.5 V
with Overvoltage Protection (OVP) and/or Thermal Shutdown Protection (TSD) in operation.
3
January 8, 2013
STR-A6000M
Series
Symbol
VDSS
IDSS
Test Conditions
STR-A6051M
STR-A6052M
STR-A6053M
STR-A6079M
Pins
81
81
STR-A6051M
On-Resistance
Switching Time
Thermal Resistance
STR-A6000M-DS
RDS(ON)
tf
Rch-C
STR-A6052M
STR-A6053M
STR-A6079M
STR-A6051M
STR-A6052M
STR-A6053M
STR-A6079M
The thermal resistance between
the channels of the MOSFET and
the case. Case temperature, TC, is
measured at the center of the case
top surface.
81
81
Min.
Typ.
Max.
Unit
650
800
300
3.95
2.8
1.9
19.2
250
ns
400
ns
22
C/W
4
January 8, 2013
STR-A6000M
Series
10
100
80
60
40
20
25
50
75
100
125
0.1 ms
TA = 25C
Single Pulse
1 ms
0.1
150
10
100
1000
80
60
40
20
0
25
50
75
100
125
EAS
Temperature Derating Coefficient (%)
150
1.6
PD1 = 1.35 W
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
40
60
80
10
Transient Thermal
Resistance, Rch-c (C/W)
20
0.1
0.01
10-6
10-5
10-4
10-3
10-2
10-1
Time (s)
STR-A6000M-DS
5
January 8, 2013
STR-A6000M
Series
10
TA = 25C
Single Pulse
0.1 ms
100
80
60
40
20
25
50
75
100
125
1 ms
Drain current limited
by on-resistance
0.1
150
10
100
1000
80
60
40
20
0
25
50
75
100
125
EAS
Temperature Derating Coefficient (%)
150
1.6
PD1 = 1.35 W
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
40
60
80
10
Transient Thermal
Resistance, Rch-c (C/W)
20
0.1
0.01
10-6
10-5
10-4
10-3
10-2
10-1
Time (s)
STR-A6000M-DS
6
January 8, 2013
STR-A6000M
Series
10
TA = 25C
Single Pulse
0.1 ms
100
1 ms
80
60
40
20
25
50
75
100
125
0.1
150
10
100
1000
80
60
40
20
0
25
50
75
100
125
EAS
Temperature Derating Coefficient (%)
150
1.6
PD1 = 1.35 W
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
40
60
80
10
Transient Thermal
Resistance, Rch-c (C/W)
20
0.1
0.01
10-6
10-5
10-4
10-3
10-2
10-1
Time (s)
STR-A6000M-DS
7
January 8, 2013
STR-A6000M
Series
10
TA = 25C
Single Pulse
100
0.1 ms
80
60
40
20
25
50
75
100
125
1 ms
Drain current limited
by on-resistance
0.1
150
10
100
1000
100
EAS
Temperature Derating Coefficient (%)
80
60
40
20
0
25
50
75
100
125
150
1.6
PD1 = 1.35 W
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
40
60
80
10
Transient Thermal
Resistance, Rch-c (C/W)
20
0.1
0.01
10-7
10-6
10-5
10-4
10-3
10-2
10-1
Time (s)
STR-A6000M-DS
8
January 8, 2013
STR-A6000M
Series
VCC
Startup
UVLO
BR
VREG
REG
OVP
D/ST
7,8
TSD
Brown-In/
Brown-Out
6.4 V
PWM OSC
DRV
SQ
R
OCP
7V
VCC
OLP
Fe edback
Control
FB/OLP
4
S/OCP
GND
Slope
Compensation
12.8 V
LEB
Pin-out Diagram
S/OCP 1
8 D/ST
BR 2
7 D/ST
GND 3
FB/OLP 4
5 VCC
STR-A6000M-DS
Number
Name
S/OCP
Function
MOSFET source, and input for Overcurrent Protection (OCP) signal
BR
GND
FB/OLP
Feedback signal input for constant voltage control signal, and input of Overload
Protection (OLP) signal
VCC
Power supply voltage input for Control Part and input of Overvoltage Protection
(OVP) signal
7, 8
D/ST
Ground
(Pin removed)
MOSFET drain, and input of the startup current
9
January 8, 2013
STR-A6000M
Series
C1
PC1
P
C51
D1
RB
S
D2
D/ST D/ST
C4
NC
R51
R55
R52
C53
C52 R53
R2
U51
VCC
VOUT
R54
R1
C5
RA
L51
D51
T1
VAC
R56
C2
U1
GND
STR-A6000
CCR
Dumper snubber
RC
C10
C3
PC 1
ROCP
C9
Typical application circuit example, enabled Brown-In/Brown-Out function (DC line detection)
PC1
P
C51
D1
S
D2
C4
NC
R55
R52
U51
VCC
C2
R51
C53
C52 R53
R2
VOUT
R54
R1
C5
C1
D/ST D/ST
L51
D51
T1
VAC
R56
U1
GND
STR-A6000
CCR
Dumper snubber
ROCP
C3
PC 1
C9
STR-A6000M-DS
10
January 8, 2013
STR-A6000M
Series
Package Diagram
DIP8 package
The following show a representative type of DIP8.
The pin 6 is removed to provide greater creepage and clearance isolation between the high
voltage pins (pins 7 and 8: D/ST) and the low voltage pin (pin 5: VCC).
9.4 0.3
5
6.5 0.2
1.0 +0.3
-0.05
+0.3
1.52
-0.05
3.3 0.2
7.5 0.5
4.2 0.3
3.4 0.1
(7.6 TYP)
0.2 5 + 0.
- 0.01
5
2.54 TYP
0.89 TYP
0.5 0.1
Unit mm
A60xxM
SK YMD
Part Number
Lot Number
Y is the last digit of the year (0 to 9)
M is the month (1 to 9, O, N, or D)
D is a period of days (1 to 3):
1 1st to 10th
2 11th to 20th
3 21st to 31st
Sanken Control Number
11
January 8, 2013
STR-A6000M
Series
Operating Precautions
In the case that you use Sanken products or design your products by using Sanken products, the reliability largely depends
on the degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation range is set
by derating the load from each rated value or surge voltage or
noise is considered for derating in order to assure or improve
the reliability. In general, derating factors include electric
stresses such as electric voltage, electric current, electric power
etc., environmental stresses such as ambient temperature,
humidity etc. and thermal stress caused due to self-heating of
semiconductor products. For these stresses, instantaneous values, maximum values and minimum values must be taken into
consideration. In addition, it should be noted that since power
devices or ICs including power devices have large self-heating
value, the degree of derating of junction temperature affects the
reliability significantly.
Because reliability can be affected adversely by improper storage environments and handling methods, please observe the
following cautions.
Cautions for Storage
Ensure that storage conditions comply with the standard temperature (5 to 35C) and the standard relative humidity (around
40 to 75%); avoid storage locations that experience extreme
changes in temperature or humidity.
Suppliers
Shin-Etsu Chemical Co., Ltd.
Momentive Performance Materials Inc.
Dow Corning Toray Co., Ltd.
Soldering
10 1 s (Flow, 2 times)
380 10 C
When tests are carried out during inspection testing and other
standard test periods, protect the products from power surges
from the testing device, shorts between the product pins, and
wrong connections. Ensure all test parameters are within the
ratings specified by Sanken for the products.
Remarks About Using Silicone Grease with a Heatsink
STR-A6000M-DS
12
January 8, 2013
STR-A6000M
Series
IMPORTANT NOTES
The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the
latest revision of the document before use.
Application and operation examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or
any other rights of Sanken or any third party which may result from its use. Unless otherwise agreed in writing by Sanken, Sanken
makes no warranties of any kind, whether express or implied, as to the products, including product merchantability, and fitness for a
particular purpose and special environment, and the information, including its accuracy, usefulness, and reliability, included in this
document.
Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device
failure or malfunction.
Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.).
When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and
its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever
long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales
representative to discuss, prior to the use of the products herein.
The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required
(aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited.
When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically
or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance
and proceed therewith at your own responsibility.
Anti radioactive ray design is not considered for the products listed herein.
Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sankens distribution network.
The contents in this document must not be transcribed or copied without Sankens written consent.
STR-A6000M-DS
13
January 8, 2013