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    2SA1943

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    This document provides information about a PNP epitaxial silicon transistor. It details its applications, features, maximum ratings, electrical characteristics, typical characteristics, and package dimensions. Key specifications include a high current capability of -17A, high power dissipation of 150W, and high frequency of 30MHz.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2SA1943

    Uploaded by

    gotcha75
    60 views7 pages
    This document provides information about a PNP epitaxial silicon transistor. It details its applications, features, maximum ratings, electrical characteristics, typical characteristics, and package dimensions. Key specifications include a high current capability of -17A, high power dissipation of 150W, and high frequency of 30MHz.

    Original Description:

    PNP Epitaxial Silicon Transistor

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    This document provides information about a PNP epitaxial silicon transistor. It details its applications, features, maximum ratings, electrical characteristics, typical characteristics, and package dimensions. Key specifications include a high current capability of -17A, high power dissipation of 150W, and high frequency of 30MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    60 views7 pages

    2SA1943

    Uploaded by

    gotcha75
    This document provides information about a PNP epitaxial silicon transistor. It details its applications, features, maximum ratings, electrical characteristics, typical characteristics, and package dimensions. Key specifications include a high current capability of -17A, high power dissipation of 150W, and high frequency of 30MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    2SA1943/FJL4215

    PNP Epitaxial Silicon Transistor


    Applications
    High-Fidelity Audio Output Amplifier
    General Purpose Power Amplifier

    Features

    High Current Capability: IC = -17A.


    High Power Dissipation : 150watts.
    High Frequency : 30MHz.
    High Voltage : VCEO= -250V
    Wide S.O.A for reliable operation.
    Excellent Gain Linearity for low THD.
    Complement to 2SC5200/FJL4315.
    Full thermal and electrical Spice models are available.
    Same transistor is also available in:
    -- TO3P package, 2SA1962/FJA4213 : 130 watts
    -- TO220 package, FJP1943 : 80 watts
    -- TO220F package, FJPF1943 : 50 watts

    Absolute Maximum Ratings*


    Symbol

    TO-264

    1.Base 2.Collector 3.Emitter

    Ta = 25C unless otherwise noted

    Parameter

    Ratings

    Units

    BVCBO

    Collector-Base Voltage

    -250

    BVCEO

    Collector-Emitter Voltage

    -250

    BVEBO

    Emitter-Base Voltage

    -5

    IC

    Collector Current

    -17

    IB

    Base Current

    -1.5

    PD

    Total Device Dissipation(TC=25C)


    Derate above 25C

    150
    1.04

    W
    W/C

    TJ, TSTG

    Junction and Storage Temperature

    - 50 ~ +150

    * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

    Thermal Characteristics*
    Symbol
    RJC

    Ta=25C unless otherwise noted

    Parameter
    Thermal Resistance, Junction to Case

    Max.

    Units

    0.83

    C/W

    * Device mounted on minimum pad size

    hFE Classification
    Classification

    hFE1

    55 ~ 110

    80 ~ 160

    2009 Fairchild Semiconductor Corporation


    2SA1943/FJL4215 Rev. C

    www.fairchildsemi.com
    1

    2SA1943/FJL4215 PNP Epitaxial Silicon Transistor

    January 2009

    Symbol

    Parameter

    Test Condition

    Min.

    Typ.

    Max.

    Units

    BVCBO

    Collector-Base Breakdown Voltage

    IC=-5mA, IE=0

    -250

    BVCEO

    Collector-Emitter Breakdown Voltage

    IC=-10mA, RBE=

    -250

    BVEBO

    Emitter-Base Breakdown Voltage

    IE=-5mA, IC=0

    -5

    ICBO

    Collector Cut-off Current

    VCB=-230V, IE=0

    -5.0

    IEBO

    Emitter Cut-off Current

    VEB=-5V, IC=0

    -5.0

    hFE1

    DC Current Gain

    VCE=-5V, IC=-1A

    55

    hFE2

    DC Current Gain

    VCE=-5V, IC=-7A

    35

    VCE(sat)

    Collector-Emitter Saturation Voltage

    IC=-8A, IB=-0.8A

    -0.4

    -3.0

    VBE(on)

    Base-Emitter On Voltage

    VCE=-5V, IC=-7A

    -1.0

    -1.5

    fT

    Current Gain Bandwidth Product

    VCE=-5V, IC=-1A

    30

    MHz

    Cob

    Output Capacitance

    VCB=-10V, f=1MHz

    360

    pF

    160
    60

    * Pulse Test: Pulse Width=20s, Duty Cycle2%

    Ordering Information
    Part Number

    Marking

    Package

    Packing Method

    2SA1943RTU

    A1943R

    TO-264

    TUBE

    hFE1 R grade

    2SA1943OTU

    A1943O

    TO-264

    TUBE

    hFE1 O grade

    FJL4215RTU

    J4215R

    TO-264

    TUBE

    hFE1 R grade

    FJL4215OTU

    J4215O

    TO-264

    TUBE

    hFE1 O grade

    2009 Fairchild Semiconductor Corporation


    2SA1943/FJL4215 Rev. C

    Remarks

    www.fairchildsemi.com
    2

    2SA1943/FJL4215 PNP Epitaxial Silicon Transistor

    Electrical Characteristics* T =25C unless otherwise noted

    -20

    IB = -900mA
    IB = -800mA

    IB = -1A

    -16
    -14
    -12

    IB = -300mA

    -10

    IB = -200mA

    Tj = 25 C

    -8

    IB = -100mA

    -6

    VCE = -5V

    Tj = 125 C

    IB = -700mA
    IB = -600mA
    IB = -500mA
    A
    IB = -400m

    hFE, DC CURRENT GAIN

    IC[mA], COLLECTOR CURRENT

    -18

    -4

    100

    Tj = -25 C

    10

    -2

    -0

    -2

    -4

    -6

    -8

    1
    0.1

    -10

    10

    IC[A], COLLECTOR CURRENT

    VCE[V], COLLECTOR-EMITTER VOLTAGE

    Figure 1. Static Characteristic

    Figure 2. DC current Gain ( R Grade )

    10000

    hFE, DC CURRENT GAIN

    Tj = 25 C

    Vce(sat)[mV], SATURATION VOLTAGE

    Tj = 125 C

    VCE = -5V

    100
    o

    Tj = -25 C

    10

    1
    0.1

    10

    Ic=-10Ib

    1000

    Tj=25 C

    Tj=125 C
    100

    Tj=-25 C

    10
    0.1

    IC[A], COLLECTOR CURRENT

    10

    Ic[A], COLLECTOR CURRENT

    Figure 3. DC current Gain ( O Grade )

    Figure 4. Collector-Emitter Saturation Voltage

    14

    Ic=-10Ib

    Tj=-25 C

    12

    IC[A], COLLECTOR CURRENT

    Vbe(sat)[mV], SATURATION VOLTAGE

    10000

    Tj=25 C

    1000

    Tj=125 C

    100
    0.1

    0
    0.0

    0.2

    0.4

    0.6

    0.8

    1.0

    1.2

    1.4

    1.6

    1.8

    2.0

    2.2

    2.4

    10

    V BE [V], BASE-EMITTER VOLTAGE

    Ic[A], COLLECTOR CURRENT

    Figure 5. Base-Emitter Saturation Voltage

    Figure 6. Base-Emitter On Voltage

    2009 Fairchild Semiconductor Corporation


    2SA1943/FJL4215 Rev. C

    V CE = 5V
    10

    www.fairchildsemi.com
    3

    2SA1943/FJL4215 PNP Epitaxial Silicon Transistor

    Typical Characteristics

    IC MAX. (Pulsed*)

    IC [A], COLLECTOR CURRENT

    0.9

    Transient Thermal Resistance, Rthjc[ C / W]

    100

    1.0

    0.8
    0.7
    0.6
    0.5
    0.4
    0.3
    0.2
    0.1

    10ms*
    10

    IC MAX. (DC)

    100ms*
    DC

    0.1

    *SINGLE NONREPETITIVE
    o

    PULSE TC=25[ C]
    0.01

    1E-6

    1E-5

    1E-4

    1E-3

    0.01

    0.1

    Pulse duration [sec]

    10

    100

    VCE [V], COLLECTOR-EMITTER VOLTAGE

    Figure 7. Thermal Resistance

    Figure 8. Safe Operating Area

    160

    PC[W], POWER DISSIPATION

    140
    120
    100
    80
    60
    40
    20
    0
    0

    25

    50

    75

    100

    125

    150

    175

    TC[ C], CASE TEMPERATURE

    Figure 9. Power Derating

    2009 Fairchild Semiconductor Corporation


    2SA1943/FJL4215 Rev. C

    www.fairchildsemi.com
    4

    2SA1943/FJL4215 PNP Epitaxial Silicon Transistor

    Typical Characteristics

    2SA1943/FJL4215 PNP Epitaxial Silicon Transistor

    Package Dimensions

    (8.30)

    (1.00)

    (2.00)

    20.00 0.20

    1.50 0.20

    (7.00)

    (7.00)

    2.50 0.10

    4.90 0.20
    (1.50)

    (1.50)

    2.50 0.20

    3.00 0.20

    (1.50)
    20.00 0.50

    0.2

    .00

    (2.00)

    (11.00)

    .00

    2
    (R

    (R1

    (0.50)

    0
    3.3

    (9.00)

    (9.00)

    (8.30)

    (4.00)

    20.00 0.20

    6.00 0.20

    TO-264

    +0.25

    1.00 0.10

    +0.25

    0.60 0.10

    2.80 0.30

    (2.80)

    5.45TYP
    [5.45 0.30]

    (0.15)

    (1.50)

    3.50 0.20

    5.00 0.20

    5.45TYP
    [5.45 0.30]

    Dimensions in Millimeters

    2009 Fairchild Semiconductor Corporation


    2SA1943/FJL4215 Rev. C

    www.fairchildsemi.com
    5

    2SA1943/FJL4215 PNP Epitaxial Silicon Transistor

    2009 Fairchild Semiconductor Corporation


    2SA1943/FJL4215 Rev. C

    www.fairchildsemi.com
    6

    This datasheet has been downloaded from:


    www.DatasheetCatalog.com
    Datasheets for electronic components.

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