TPH1R403NL

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPH1R403NL
1. Applications
High-Efficiency DC-DC Converters
Switching Voltage Regulators

2. Features
(1) High-speed switching
(2) Small gate charge: QSW = 10.6 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 1.7 m (typ.) (VGS = 4.5 V)
(4) Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain

SOP Advance

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 30 V

Gate-source voltage VGSS 20
Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 150 A
Drain current (DC) (Tc = 25 ) (Note 1) ID 60
Drain current (pulsed) (t = 1 ms) (Note 1) IDP 200
Power dissipation (Tc = 25 ) PD 64 W
Power dissipation (t = 10 s) (Note 3) PD 2.8
Power dissipation (t = 10 s) (Note 4) PD 1.6
Single-pulse avalanche energy (Note 5) EAS 355 mJ
Avalanche current IAR 60 A
Channel temperature Tch 150
Storage temperature Tstg -55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2013-08
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5. Thermal Characteristics
Characteristics Symbol Max Unit

Channel-to-case thermal resistance (Tc = 25 ) Rth(ch-c) 1.95 /W

Channel-to-ambient thermal resistance (t = 10 s) (Note 3) Rth(ch-a) 44.6
Channel-to-ambient thermal resistance (t = 10 s) (Note 4) Rth(ch-a) 78.1

Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Limited by silicon chip capability. Package limit is 60 A.
Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 5: VDD = 24 V, Tch = 25 (initial), L = 76 H, IAR = 60 A

Fig. 5.1 Device Mounted on a Glass-Epoxy Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (a) Board (b)

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

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6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = 20 V, VDS = 0 V 0.1 A

Drain cut-off current IDSS VDS = 30 V, VGS = 0 V 10
Drain-source breakdown voltage V(BR)DSS ID = 10 mA, VGS = 0 V 30 V
V(BR)DSX ID = 10 mA, VGS = -20 V 15
Gate threshold voltage Vth VDS = 10 V, ID = 0.5 mA 1.3 2.3
Drain-source on-resistance RDS(ON) VGS = 4.5 V, ID = 30 A 1.7 2.1 m
VGS = 10 V, ID = 30 A 1.2 1.4

6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)

Characteristics Symbol Test Condition Min Typ. Max Unit

Input capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 3400 4400 pF

Reverse transfer capacitance Crss 93 200
Output capacitance Coss 1800
Gate resistance rg 1.1 1.7
Switching time (rise time) tr See Fig. 6.2.1 5.6 ns
Switching time (turn-on time) ton 16
Switching time (fall time) tf 8.9
Switching time (turn-off time) toff 50

Fig. 6.2.1 Switching Time Test Circuit

6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)

Characteristics Symbol Test Condition Min Typ. Max Unit

Total gate charge (gate-source plus Qg VDD 15 V, VGS = 10 V, ID = 60 A 46 nC

gate-drain) VDD 15 V, VGS = 4.5 V, ID = 60 A 20
Gate-source charge 1 Qgs1 VDD 15 V, VGS = 10 V, ID = 60 A 12.1
Gate-drain charge Qgd 4.3
Gate switch charge QSW 10.6

6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)

Characteristics Symbol Test Condition Min Typ. Max Unit

Reverse drain current (pulsed) (Note 6) IDRP 200 A

Diode forward voltage VDSF IDR = 60 A, VGS = 0 V -1.2 V

Note 6: Ensure that the channel temperature does not exceed 150 .

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7. Marking

Fig. 7.1 Marking

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8. Characteristics Curves (Note)

Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS

Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS

Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta

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Fig. 8.7 IDR - VDS Fig. 8.8 Capacitance - VDS

Fig. 8.9 Vth - Ta Fig. 8.10 Dynamic Input/Output Characteristics

Fig. 8.11 PD - Ta Fig. 8.12 PD - Tc

(Guaranteed Maximum) (Guaranteed Maximum)

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Fig. 8.13 rth - tw

(Guaranteed Maximum)

Fig. 8.14 Safe Operating Area

(Guaranteed Maximum)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.

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Package Dimensions
Unit: mm

Weight: 0.069 g (typ.)

Package Name(s)

TOSHIBA: 2-5Q1S
Nickname: SOP Advance

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