QSD122, QSD123, QSD124 Plastic Silicon Infrared Phototransistor

September 2012

QSD122, QSD123, QSD124

Plastic Silicon Infrared Phototransistor
Features Description
NPN Silicon Phototransistor The QSD122/123/124 is a phototransistor encapsulated
Package Type: T-1 3/4 in an infrared transparent, black T-1 3/4 package.
Matched Emitter: QED12X/QED22X/QED23X
Narrow Reception Angle: 24C
Daylight Filter
Package Material and Color: Black Epoxy
High Sensitivity

Package Dimensions

0.195 (4.95)

REFERENCE
SURFACE 0.305 (7.75)

0.040 (1.02)
0.800 (20.3)
NOM
MIN

EMITTER
COLLECTOR
Schematic
COLLECTOR

0.500 (1.25)
0.100 (2.54) NOM

0.240 (6.10)
0.215 (5.45) EMITTER
0.020 (0.51)
SQ. (2X)

Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of 0.010 (0.25) on all non-nominal dimensions unless otherwise specified.

2012 Fairchild Semiconductor Corporation www.fairchildsemi.com

QSD122, QSD123, QSD124 Rev. 1.0.0
 QSD122, QSD123, QSD124 Plastic Silicon Infrared Phototransistor
Absolute Maximum Ratings (TA = 25C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.

Symbol Parameter Rating Unit

TOPR Operating Temperature -40 to +100 C
TSTG Storage Temperature -40 to +100 C
TSOL-I Soldering Temperature (Iron)(2,3,4) 240 for 5 sec C
TSOL-F Soldering Temperature (Flow)(2,3) 260 for 10 sec C
VCE Collector-Emitter Voltage 30 V
VEC Emitter-Collector Voltage 5 V
PD Power Dissipation(1) 100 mW
Notes:
1. Derate power dissipation linearly 1.33mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16 (1.6mm) minimum from housing.
5. = 880nm, AlGaAs.

Electrical/Optical Characteristics (TA = 25C)

Symbol Parameter Test Conditions Min. Typ. Max. Units
PS Peak Sensitivity Wavelength 880 nm
Reception Angle 12
ICEO Collector-Emitter Dark Current VCE = 10V, Ee = 0 100 nA
BVCEO Collector-Emitter Breakdown IC = 1mA 30 V
BVECO Emitter-Collector Breakdown IE = 100A 5 V
IC(ON) On-State Collector Current(5) Ee = 0.5mW/cm2, VCE = 5V
QSD122 1.00 6.00 mA
QSD123 4.00 16.00 mA
QSD124 6.00 mA
VCE(SAT) Saturation Voltage(5) Ee = 0.5mW/cm2, IC = 0.5mA 0.4 V
tr Rise Time VCC = 5V, RL = 100, IC = 0.2mA 7 s
tf Fall Time 7 s

2012 Fairchild Semiconductor Corporation www.fairchildsemi.com

QSD122, QSD123, QSD124 Rev. 1.0.0 2
 QSD122, QSD123, QSD124 Plastic Silicon Infrared Phototransistor
Typical Performance Characteristics
Figure 1. Light Current vs. Radiant Intensity
100 Figure 2. Angular Response Curve
100 90 80
110 70
120 60
IC(ON) - Light Current (mA)

130 50
10 40
140

150 30

160 20
1
170 10

180 0
1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0

0.1
0.0 0.2 0.4 0.6 0.8 1.0

Ee - Radiant Intensity (mW/cm 2)

Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage
101 101
Ie=1mW/cm 2

Ie=0.5mW/cm 2
I L - Normalized Light Current

100 100
ICEO - Dark Current (nA)

Ie=0.2mW/cm 2

Ie=0.1mW/cm 2

10-1 10-1

Normalized to:
10-2 10-2 VCE = 5V
Ie = 0.5mW/cm 2
TA = 25 oC

10-3 10-3
0 5 10 15 20 25 30 0.1 1 1 0

VCE - Collector-Emitter Voltage (V) VCE - Collector-Emitter Voltage (V)

Figure 5. Dark Current vs. Ambient Temperature

10 4
Normalized to:
VCE = 25V
ICEO - Normalized Dark Current

3
10 TA = 25 oC

VCE =25V
10 2
VCE =10V

1
10

10 0

10 -1
-40 -20 0 20 40 60 80 100
o
TA - Ambient Temperature ( C)

2012 Fairchild Semiconductor Corporation www.fairchildsemi.com

QSD122, QSD123, QSD124 Rev. 1.0.0 3
 QSD122, QSD123, QSD124 Plastic Silicon Infrared Phototransistor

2012 Fairchild Semiconductor Corporation www.fairchildsemi.com

QSD122, QSD123, QSD124 Rev. 1.0.0 4