SXB4089Z

400MHz to
2500MHz W
Medium Power
InGap/GaAs
HBT Amplifier SXB4089Z
400MHz to 2500MHz W MEDIUM POWER
InGaP/GaAs HBT AMPLIFIER
Package: SOT-89

Product Description Features

RFMDs SXB4089Z amplifier is a high efficiency InGaP/GaAs heterojunc- On-Chip Active Bias Control,
tion bipolar transistor (HBT) MMIC housed in low-cost, surface-mountable Single 5V Supply
plastic package. These amplifiers are specially designed for use as driver High Output 3rd Order
devices for infrastructure equipment in the 400MHz to 2500MHz cellular, Intercept:
ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal
choice for multi-carrier as well as digital applications. +45dBm Typ.
High P1dB: +28dBm Typ.
High Gain: +20dB at 880MHz
Optimum Technology
Matching Applied
Low RTH: 25C/W Typ.
Typical IP3, P1dB, Gain
Robust 2000V ESD, Class 2
GaAs HBT 50
45
GaAs MESFET OIP3
40 P1dB Applications
InGaP HBT
35 Gain
SiGe BiCMOS 30
WCDMA, PCS, Cellular
Systems
dBm

Si BiCMOS 25
SiGe HBT 20 Multi-Carrier Applications
15
GaAs pHEMT
10
Si CMOS
5
Si BJT 0
GaN HEMT 880 MHz 1960 MHz 2140 MHz
RF MEMS

Specification
Parameter Unit Condition
Min. Typ. Max.
Small Signal Gain 20.0 18.0 22.0 dBm 880MHz
15.0 dBm 1960MHz
12.5 14.0 15.5 dBm 2140MHz
Output Power at 1dB Compression, 27.5 dBm 880MHz
27.5 dBm 1960MHz
26.0 27.5 dBm 2140MHz
Output Third Order Intercept Point 41.5 43.5 dBm 880MHz
44.5 dBm 1960MHz
42.5 44.5 dBm 2140MHz
Noise Figure 5.6 dB 880MHz
3.3 dB 1960MHz
3.3 dB 2140MHz
Input VSWR 1.3:1 2.0:1 880MHz
1.3:1 1960MHz
1.3:1 2140MHz
Device Operating Voltage 4.75 5.0 5.25 V
Device Operating Current 235.0 265.0 330.0 mA
Thermal Resistance 25.3 C/W junction to backside
Test Conditions: TA = 25C, Z0 = 50Measured in Application Circuit, POUT per tone = +11dBm, Tone Spacing = 1MHz

RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc.

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SXB4089Z
Absolute Maximum Ratings
Parameter Rating Unit Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
Max Device Current (lD) 500 mA cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
Max Device Voltage (VD) 6 V tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
Max RF Input Power 18 dBm responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
Max Dissipated Power 2 W license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
Max Junction Temperature (TJ) 165 C cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
Operating Temperature Range (TL) -40 to + 85 C per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
Max Storage Temperature 150 C solder.
ESD Rating - Human Body Model Class 2
(HBM)
Moisture Sensitivity Level MSL2
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL)/RTH, j - l and TL = TLEAD

880 MHz Application Circuit Data, VCC=5V, ID=270mA

P1dB vs. Frequency Gain vs. Frequency
30 25

28 23

26 21
dB
dBm

24 19
25C
S21_25C
-40C
22 17 S21_-40C
85C
S21_85C
20 15
0.85 0.86 0.87 0.88 0.89 0.9 0.91 0.85 0.86 0.87 0.88 0.89 0.9 0.91
Frequency (GHz) Frequency (GHz)

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 SXB4089Z

880 MHz Application Circuit Data, VCC=5V, ID=270mA

Input/Output Return Loss, OIP3 vs. Frequency (11 dBm tones)

Isolation vs. Frequency, T=25C 50
0

-5 47

-10
44

dBm
dB

-15
S11 41
-20 S12
S22
25C
-25 38
-40C
85C
-30 35
0.85 0.86 0.87 0.88 0.89 0.9 0.91 0.85 0.86 0.87 0.88 0.89 0.9 0.91
Frequency (GHz) Frequency (GHz)

OIP3 vs. Tone Power @880MHz ACP @880MHz vs. Ch. Pwr.(IS-95 9Ch.Fwd.)
50 -40

-45 25C
47 -40C
-50
85C
44 -55
IM3 (dBc)

dBc

-60
41
25C -65
38 -40C
-70
85C
35 -75
6 8 10 12 14 16 18 20 15 16 17 18 19 20 21 22
Pout (dBm) Ch. Pwr

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SXB4089Z
1960 MHz Application Circuit Data, VCC=5V, ID=270mA
P1dB vs. Frequency Gain vs. Frequency
30 20

28 18

26 16

dB
dB

24 14
25C
S21_25C
22 -40C 12 S21_-40C
85C S21_85C
20 10
1.93 1.94 1.95 1.96 1.97 1.98 1.99 1.93 1.94 1.95 1.96 1.97 1.98 1.99
GHz Frequency (GHz)

Input/Output Return Loss, OIP3 vs. Frequency

Isolation vs. Frequency, T=25C 50
0

-5 47

-10 44
dBm
dB

-15
41
-20
S11 25C
38
-25 S12 -40C
S22
85C
-30 35
1.93 1.94 1.95 1.96 1.97 1.98 1.99 1.93 1.94 1.95 1.96 1.97 1.98 1.99
Frequency (GHz) Frequency (GHz)

OIP3 vs. Tone Power @1960MHz ACP @1960MHz vs. Ch. Pwr.(IS-95 9Ch.Fwd.)
50 -40

-45 25C
47
-40C
-50
85C
44 -55
IM3 (dBc)

dBc

-60
41
25C
-65
38 -40C
-70
85C
35 -75
6 8 10 12 14 16 18 20 15 16 17 18 19 20 21 22
Pout (dBm) Ch. Pwr

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 SXB4089Z
2140 MHz Application Circuit Data, VCC=5V, ID=270mA
P1dB vs. Frequency Gain vs. Frequency
30 20
S21_25C
28 18 S21_-40C
S21_85C
26 16

dB
dB

24 14
25C
-40C
22 12
85C

20 10
2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.11 2.12 2.13 2.14 2.15 2.16 2.17
GHz Frequency (GHz)

Input/Output Return Loss, OIP3 vs. Frequency (11 dBm tones)

Isolation vs. Frequency, T=25C 50
0

-5 S11 47
S12
-10 S22
44
dBm
dB

-15
41
-20
25C
-25 38 -40C
85C
-30 35
2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.11 2.12 2.13 2.14 2.15 2.16 2.17
Frequency (GHz) Frequency (GHz)

OIP3 vs. Tone Power @2140MHz ACP @2140MHz vs. Ch. Pwr.(WCDMA 64Ch.Fwd.)
50 -35

-40
47
25C
-45
-40C
44
IM3 (dBc)

dBc

85C
-50
41
-55
25C
38 -40C
-60
85C
35 -65
6 8 10 12 14 16 18 20 15 16 17 18 19 20 21
Pout (dBm) Ch. Pwr

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SXB4089Z
Pin Names and Descriptions
Pin Name Description
1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.

2, 4 GND Connection to ground. Use via holes for best perfromance to reduce lead inductance as close to ground leads as possi-
ble.
3 RF OUT/Bias RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-
ation.

Suggested Pad Layout

Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.

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SXB4089Z
880MHz Application Schematic

SXB4089Z

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SXB4089Z
880MHz Evaluation Board Layout

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SXB4089Z
1960MHz Application Schematic

SXB4089Z

1960MHz Evaluation Board Layout

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SXB4089Z
2140MHz Application Schematic

SXB4089Z

2140MHz Evaluation Board Layout

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SXB4089Z
Part Identification

X40Z
1 2 3

3
1
Alternate marking: SXB4089Z on line 1 with Trace Code on line 2.

Ordering Information

Ordering Code Description

SXB4089Z 7 Reel with 1000 pieces
SXB4089ZSQ Sample bag with 25 pieces
SXB4089ZSR 7 Reel with 100 pieces
SXB4089Z-EVB1 880MHz, 5V Operation PCBA
SXB4089Z-EVB2 1960MHz, 5V Operation PCBA
SXB4089Z-EVB3 2140MHz, 5V Operation PCBA

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SXB4089Z