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    Session 4 - MOSFET - Exercises

    Uploaded by

    Ajay Sampath
    1. The document contains 4 problems regarding nMOSFET devices. It provides figures showing MOSFET circuit diagrams and asks to calculate current, charge distribution, electric field, and other properties. 2. It asks to calculate current vs drain-source voltage for nMOSFETs with different threshold voltages. It also asks to calculate channel charge density, gate voltage, and transconductance for a given resistance. 3. For a circuit with a small AC signal input, it asks to calculate the drain voltage and gate current amplitudes. 4. It asks to derive the square-law current equation for a MOSFET with circular gate geometry instead of rectangular. 5. It provides data to calculate and

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Session 4 - MOSFET - Exercises

    Uploaded by

    Ajay Sampath
    937 views4 pages
    1. The document contains 4 problems regarding nMOSFET devices. It provides figures showing MOSFET circuit diagrams and asks to calculate current, charge distribution, electric field, and other properties. 2. It asks to calculate current vs drain-source voltage for nMOSFETs with different threshold voltages. It also asks to calculate channel charge density, gate voltage, and transconductance for a given resistance. 3. For a circuit with a small AC signal input, it asks to calculate the drain voltage and gate current amplitudes. 4. It asks to derive the square-law current equation for a MOSFET with circular gate geometry instead of rectangular. 5. It provides data to calculate and

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    © Attribution Non-Commercial (BY-NC)

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    1. The document contains 4 problems regarding nMOSFET devices. It provides figures showing MOSFET circuit diagrams and asks to calculate current, charge distribution, electric field, and other properties. 2. It asks to calculate current vs drain-source voltage for nMOSFETs with different threshold voltages. It also asks to calculate channel charge density, gate voltage, and transconductance for a given resistance. 3. For a circuit with a small AC signal input, it asks to calculate the drain voltage and gate current amplitudes. 4. It asks to derive the square-law current equation for a MOSFET with circular gate geometry instead of rectangular. 5. It provides data to calculate and

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    937 views4 pages

    Session 4 - MOSFET - Exercises

    Uploaded by

    Ajay Sampath
    1. The document contains 4 problems regarding nMOSFET devices. It provides figures showing MOSFET circuit diagrams and asks to calculate current, charge distribution, electric field, and other properties. 2. It asks to calculate current vs drain-source voltage for nMOSFETs with different threshold voltages. It also asks to calculate channel charge density, gate voltage, and transconductance for a given resistance. 3. For a circuit with a small AC signal input, it asks to calculate the drain voltage and gate current amplitudes. 4. It asks to derive the square-law current equation for a MOSFET with circular gate geometry instead of rectangular. 5. It provides data to calculate and

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    VDD VDD

    IDS 10kW IDS

    VT=2V
    VT=2V 10kW

    Figure 1: Figure 2:

    2VDD
    VDD
    VDD
    IDS
    IDS
    VT=0V
    VT=-2V

    Figure 3: Figure 4:

    1. Given are the nMOSFET’s in the figures 1,2, 3 and 4. Draw the current
    2
    ID as a function of VDD for every case. Use the following data: µn = 2000 cm
    Vs
    ,
    F F
    εox = εr ε0 = 3.5 10−13 cm ,εSi = 10−12 cm , tox = 35nm, W = 10µm, and
    L = 1µm. Use the simplified current equations.

    2. An n MOS transistor has the following properties: VF B = −0.5V , tox =


    2
    30nm, W = 5µm, L = 0.5µm, µ = 1000 cm Vs
    , ND = 1016 cm−3

    (a) Calculate the free-electron density in the channel that is required


    for the MOSFET to present a resistance of 2kOhm between source and drain
    at low value of VDS and for 0V substrate bias.

    (b) Calculate the gate voltage in excess of the threshold voltage needed
    to produce the desired resistance under the same conditions. At which ab-
    solute value of gate voltage do we obtain this resistance?

    1
    Figure 5:

    (c) Sketch the band diagram of the MOSFET for this condition.

    (d) The transistor is loaded by a resistor RL , as shown on figure 5.


    Calculate the transconductance of the transistor for RL = 0 Ohm, RL =
    500 Ohm, RL = 5 kOhm.

    3. Given the circuit in figure 6 with RL = 10kΩ . Datas are VT = 1V ,


    F 2
    tox = 30nm,εox = 3.0 10−13 cm , W = 5µm, L = 0.5µm, µ = 1000 cmVs
    ,
    VGS = 1.5V ,vin = 10−3 sin(2π 108 t) V . t is the time in s.

    Figure 6:

    All the capacitors are zero except the oxide capacity (and η = 1).
    We ask the amplitude for the small signal voltage at the drain and the
    amplitude of the small signal current at the gate.

    4. A linear device geometry and a rectangular gate of length L by width


    W were explicitly assumed in the text derivation of ID -VD relationships.
    However, MOSFETs have been built with circular geometry, as pictured
    (top view) in figure 7. If r1 and r2 are the inside and outside diameters of

    2
    S G D r1
    r2

    Figure 7: MOSFET with a circular geometry

    the gated area, show that in the square-law formulation one obtains:
    " #
    2
    2π VDS
    ID = µ n Cox (V GS − VT )VDS − (1)
    ln( rr21 ) 2

    for below pinch-off operation of a MOSFET with circular geometry. To


    derive the above result, use cilindrical coordinates (r, θ, z). Tip: the gradient
    operator in cilindrical coordinates is given by:

    ~ = ∂Ψ ~ur + 1 ∂Ψ ~uθ + ∂Ψ ~uz


    ∇Ψ (2)
    ∂r r ∂θ ∂z

    3
    5. Calculate and draw the charge distribution, the electrical field and the
    band bending of the nMOSFET in figure 8 at the indicated area in the
    channel. Use the following data: VGS = 5V , VD = VS = 0V , VB = −5V ,
    F F
    εox = εr ε0 = 3.5 10−13 cm , εSi = εrSi ε0 = 10−12 cm , tox = 35nm, NA =
    C C
    1016 cm−3 , Qox = 1.6 10−8 cm 2 , Q ss = 0 cm2
    , n i = 10 10
    cm −3
    , φms = −0.345V ,
    and Eg = 1.10eV .

    VG

    VS VD
    n+
    n+ n+

    VB

    Figure 8:

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